Activating Silent Synapses in Sulfurized Indium Selenide for Neuromorphic Computing

Large Polaron Condensation in a Pseudo-Bilayer Quantum Hall Composite

There is much interest regarding the "coupled ferroelectricity and superconductivity" in the two-dimensional material, bilayer Td-MoTe2; however, the value and the type of electric polarization are unknown. The device structure and the measurement method show that the measured material is the composite of the pseudo-bilayer quantum Hall system, with a thickness of about thirty-six nanometers. The derived dielectric hysteresis loops and the calculated electronic structure reveal that the condensed large polarons are responsible for the reverse ferroelectricity and the coupled superconductivity. The maximum value of polaron-type electric polarization is ~12 nC/μm2 or 1.2 × 104 μc/cm2.

Dual functional states of working memory realized by memristor-based neural network

Working memory refers to the brain's ability to store and manipulate information for a short period. It is disputably considered to rely on two mechanisms: sustained neuronal firing, and "activity-silent" working memory. To develop a highly biologically plausible neuromorphic computing system, it is anticipated to physically realize working memory that corresponds to both of these mechanisms. In this study, we propose a memristor-based neural network to realize the sustained neural firing and activity-silent working memory, which are reflected as dual functional states within memory. Memristor-based synapses and two types of artificial neurons are designed for the Winner-Takes-All learning rule. During the cognitive task, state transformation between the "focused" state and the "unfocused" state of working memory is demonstrated. This work paves the way for further emulating the complex working memory functions with distinct neural activities in our brains.

Optoelectronic Synaptic Memtransistor Based on 2D SnSe/MoS2 van der Waals Heterostructure under UV-Ozone Treatment

Memristive switching devices with electrically and optically invoked synaptic behaviors show great promise in constructing an artificial biological visual system. Through rational design and integration, 2D materials and their van der Waals (vdW) heterostructures can be applied to realize multifunctional optoelectronic devices. Here, a multifunctional optoelectronic synaptic memtransistor based on a SnSe/MoS₂ vdW p-n heterojunction to simulate the human biological visual system is reported. By employing simple mild UV-ozone treatment, the device exhibits reversible resistive switching (RS) behavior with switching ratio up to 10³ . The retina-like selective response to different input light wavelengths is activated, as well as programmable multilevel resistance states and long-term synaptic plasticity. Moreover, memory and logic functions analogous to those found in the visual cortex of the brain are performed by controlling the optical and electrical input signals. This work proposes a feasible strategy to modulate RS in vdW heterostructures for memristive devices, which show significant potential for neuromorphic processing.