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Huang L, Wan S, Wu J, Wang B, Yu H, Liu Y, Zhang J, Wu Y, Zhang X, Yan J, Zhang J. Triple Synergistic Modulation via Sn Doping in Tetrahedrites: Electronic Structure, DOS, and Scattering Engineering for a High Thermoelectric Performance. ACS APPLIED MATERIALS & INTERFACES 2025; 17:28384-28394. [PMID: 40304460 DOI: 10.1021/acsami.5c03760] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/02/2025]
Abstract
Achieving a high power factor and low lattice thermal conductivity is crucial for improving the thermoelectric performance. The eco-friendly Cu12Sb4S13 tetrahedrite inherently exhibits a high power factor (∼10-14 μW cm-1 K-2) and low thermal conductivity (0.5-1.00 W m-1 K-1), but these properties also impose significant limitations for further performance enhancement. To overcome these challenges, researchers have explored strategies such as codoping/synergistic element doping and nanocomposites. In this work, we demonstrate that Sn doping at the Sb site in Cu12Sb4S13 (without the use of nanocomposites) enables the synergistic modulation of both the electronic and thermal properties. The Sn doping increases the hole concentration and enhances the density of states (DOS), leading to a marked improvement in the power factor (at 750 K), 12 μW cm-1 K-2 for x = 0 to 16 μW cm-1 K-2 for x = 0.04. Simultaneously, Sn doping induces strong phonon scattering, which lowers thermal conductivity by ∼69% (at 750 K). This synergistic modulation of the electronic structure, DOS, and scattering mechanisms results in a significant enhancement in the thermoelectric performance. The optimized Cu12Sb3.96Sn0.04S13 sample exhibits an exceptional figure of merit (ZT) of 1.26 at 750 K, representing a 126% increase compared to pristine Cu12Sb4S13. These findings demonstrate the effectiveness of Sn doping in simultaneously optimizing the electrical and thermal properties of Cu12Sb4S13 through the synergistic modulation of the electronic structure, density of states, and phonon scattering mechanisms.
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Affiliation(s)
- Lulu Huang
- School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China
- Engineering Research Center of High Performance Copper Alloy Materials and Processing, Ministry of Education, Hefei University of Technology, Hefei 230009, China
| | - Shanhong Wan
- Anhui Province Engineering Research Center of Flexible and Intelligent Materials, School of Chemistry and Chemical Engineering, Hefei University of Technology, Hefei 230009, China
| | - Junyang Wu
- School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China
| | - Binbin Wang
- School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China
| | - Hongsong Yu
- School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China
| | - Yu Liu
- Anhui Province Engineering Research Center of Flexible and Intelligent Materials, School of Chemistry and Chemical Engineering, Hefei University of Technology, Hefei 230009, China
| | - Jinhua Zhang
- Infrared and Low Temperature Plasma Key Laboratory of Anhui Province, College of Electronic Engineering, National University of Defense Technology, Hefei 230037, China
| | - Yucheng Wu
- School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China
- Engineering Research Center of High Performance Copper Alloy Materials and Processing, Ministry of Education, Hefei University of Technology, Hefei 230009, China
| | - Xuemei Zhang
- School of Physics and Electronic Information Engineering, Ningxia Normal University, Guyuan 756000, China
| | - Jian Yan
- School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China
- Engineering Research Center of High Performance Copper Alloy Materials and Processing, Ministry of Education, Hefei University of Technology, Hefei 230009, China
| | - Jian Zhang
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
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2
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Liu D, Bai S, Wen Y, Peng J, Liu S, Shi H, Li Y, Hong T, Liang H, Qin Y, Su L, Qian X, Wang D, Gao X, Ding Z, Cao Q, Tan Q, Qin B, Zhao LD. Lattice plainification and band engineering lead to high thermoelectric cooling and power generation in n-type Bi 2Te 3 with mass production. Natl Sci Rev 2025; 12:nwae448. [PMID: 39830400 PMCID: PMC11737397 DOI: 10.1093/nsr/nwae448] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/01/2024] [Revised: 11/08/2024] [Accepted: 12/05/2024] [Indexed: 01/22/2025] Open
Abstract
Thermoelectrics can mutually convert between thermal and electrical energy, ensuring its utilization in both power generation and solid-state cooling. Bi2Te3 exhibits promising room-temperature performance, making it the sole commercially available thermoelectrics to date. Guided by the lattice plainification strategy, we introduce trace amounts of Cu into n-type Bi2(Te, Se)3 (BTS) to occupy Bi vacancies, thereby simultaneously weakening defect scattering and modulating the electronic bands. Meanwhile, the interstitial Cu can bond with the BTS matrix to form extra electron transport pathways. The multiple occupations of Cu substantially boost carrier mobility and electrical performance. Consequently, the BTS + 0.2%Cu achieves a room-temperature ZT of ∼1.3 with an average ZT ave of ∼1.2 at 300-523 K. Moreover, the kilogram-scale ingot designed for mass production also exhibits high uniformity. Finally, we fabricate a full-scale device that achieves an excellent conversion efficiency of ∼6.4% and a high cooling ΔT max of ∼70.1 K, both of which outperform commercial devices.
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Affiliation(s)
- Dongrui Liu
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
- Center for Bioinspired Science and Technology, Hangzhou International Innovation Institute, Beihang University, Hangzhou 311115, China
| | - Shulin Bai
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Yi Wen
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Jiayi Peng
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Shibo Liu
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Haonan Shi
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Yichen Li
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Tao Hong
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Huiqiang Liang
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Yongxin Qin
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Lizhong Su
- School of Materials Science and Engineering, Taiyuan University of Science and Technology, Taiyuan 030024, China
| | - Xin Qian
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Dongyang Wang
- Key Laboratory of Materials Physics of Ministry of Education School of Physics, Zhengzhou University, Zhengzhou 450001, China
| | - Xiang Gao
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Beijing 100094, China
| | - Zhihai Ding
- Huabei Cooling Device Co. LTD, Langfang 065400, China
| | - Qian Cao
- Huabei Cooling Device Co. LTD, Langfang 065400, China
| | - Qing Tan
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Bingchao Qin
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
- Center for Bioinspired Science and Technology, Hangzhou International Innovation Institute, Beihang University, Hangzhou 311115, China
| | - Li-Dong Zhao
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
- Center for Bioinspired Science and Technology, Hangzhou International Innovation Institute, Beihang University, Hangzhou 311115, China
- Tianmushan Laboratory, Hangzhou 311115, China
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3
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Zhang F, He M, Zhu L, Jia B, Shi Y, Wang W, Peng Z, Liang P, Chao X, Yang Z, Wu D. Thermoelectric Cooling-Oriented Large Power Factor Realized in N-Type Bi 2Te 3 Via Deformation Potential Modulation and Giant Deformation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2405182. [PMID: 39300867 DOI: 10.1002/smll.202405182] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/24/2024] [Revised: 09/06/2024] [Indexed: 09/22/2024]
Abstract
Thermoelectric refrigeration, utilizing Peltier effect, has great potential in all-solid-state active cooling field near room temperature. The performance of a thermoelectric cooling device is highly determined by the power factor of consisting materials besides the figure of merit. In this work, it is demonstrated that successive addition of Cu and Nd can realize non-trivial modulation of deformation potential in n-type room temperature thermoelectric material Bi2Te2.7Se0.3 and result in a significant increment of electron mobility and remarkably enhanced power factor. Following giant hot deformation process improves grain texturing and strengthens inter-layer interaction in Bi2Te2.7Se0.3 lattice, further pushing the power factor to ≈47 µW cm-1 K-2 at 300 K and maximal figure of merit ZTmax to ≈1.34 at 423 K with average ZTave of ≈1.27 at 300-473 K. Moreover, robust compressive strength is enhanced to ≈146.6 MPa. The corresponding finite element simulations demonstrate large temperature differences ΔT of ≈70 K and a maximal coefficient of performance COP ≈ 10.6 (hot end temperature at 300 K), which can be achieved in a ten-pair thermoelectric cooling virtual module. The strategies and results as shown in this work can further advance the application of n-type Bi2Te3 for thermoelectric cooling.
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Affiliation(s)
- Fudong Zhang
- Key Laboratory for Macromolecular Science of Shaanxi Province, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710062, China
| | - Mingkai He
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, China
| | - Lujun Zhu
- School of Physics and Information Technology, Shaanxi Normal University, Xi'an, 710119, China
| | - Beiquan Jia
- Key Laboratory for Macromolecular Science of Shaanxi Province, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710062, China
| | - Yalin Shi
- Key Laboratory for Macromolecular Science of Shaanxi Province, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710062, China
| | - Weishuai Wang
- Key Laboratory for Macromolecular Science of Shaanxi Province, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710062, China
| | - Zhanhui Peng
- Key Laboratory for Macromolecular Science of Shaanxi Province, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710062, China
| | - Pengfei Liang
- School of Physics and Information Technology, Shaanxi Normal University, Xi'an, 710119, China
| | - Xiaolian Chao
- Key Laboratory for Macromolecular Science of Shaanxi Province, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710062, China
| | - Zupei Yang
- Key Laboratory for Macromolecular Science of Shaanxi Province, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710062, China
| | - Di Wu
- Key Laboratory for Macromolecular Science of Shaanxi Province, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710062, China
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Jia B, Zhang H, Zhang F, Li H, Ma B, Wang W, Shi Y, Chao X, Yang Z, Wu D. Broad-Temperature Thermoelectric Figure of Merit Enhancement in Unconventional n-Type Bi 2Te 2.3Se 0.7 Alloys. ACS APPLIED MATERIALS & INTERFACES 2024; 16:60588-60598. [PMID: 39453308 DOI: 10.1021/acsami.4c14717] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/26/2024]
Abstract
Bi2Te2.7Se0.3-based alloys are conventional n-type thermoelectric materials for solid-state cooling and heat harvest near room temperature; high thermoelectric performance over a wide temperature range and superior mechanical properties are essential for their use in practical thermoelectric devices. In this work, we demonstrated that decent thermoelectric performance can also be realized in an unconventional composite with a nominal composition of Bi2Te2.3Se0.7 since the emergence of a Bi2Te2Se phase with Se ordered occupation could induce an enlargement of the electronic band gap. Follow-up Cu/Na codoping could generate a dynamic optimization of carrier concentration, significantly broadening the temperature range of high thermoelectric performance. Further B incorporation and annealing treatment resulted in obvious grain refinement and stacking fault structures, which help pushing the ultimate maximal figure of merit up to ∼1.3 at 423 K with an average value of ∼1.2 at 300-573 K. This work might provide insights for further research on bismuth tellurides and other thermoelectric materials.
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Affiliation(s)
- Beiquan Jia
- Key Laboratory for Macromolecular Science of Shaanxi Province and Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials and Engineering, Shaanxi Normal University, Xi'an 710062, China
| | - Hu Zhang
- School of Physics and Information Technology, Shaanxi Normal University, Xi'an 710119, China
| | - Fudong Zhang
- Key Laboratory for Macromolecular Science of Shaanxi Province and Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials and Engineering, Shaanxi Normal University, Xi'an 710062, China
| | - Huisi Li
- Institute of New Concept Sensors and Molecular Materials, School of Chemistry and Chemical Engineering, Shaanxi Normal University, Xi'an 710119, China
| | - Baopeng Ma
- Key Laboratory for Macromolecular Science of Shaanxi Province and Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials and Engineering, Shaanxi Normal University, Xi'an 710062, China
| | - Weishuai Wang
- Key Laboratory for Macromolecular Science of Shaanxi Province and Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials and Engineering, Shaanxi Normal University, Xi'an 710062, China
| | - Yalin Shi
- Key Laboratory for Macromolecular Science of Shaanxi Province and Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials and Engineering, Shaanxi Normal University, Xi'an 710062, China
| | - Xiaolian Chao
- Key Laboratory for Macromolecular Science of Shaanxi Province and Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials and Engineering, Shaanxi Normal University, Xi'an 710062, China
| | - Zupei Yang
- Key Laboratory for Macromolecular Science of Shaanxi Province and Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials and Engineering, Shaanxi Normal University, Xi'an 710062, China
| | - Di Wu
- Key Laboratory for Macromolecular Science of Shaanxi Province and Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials and Engineering, Shaanxi Normal University, Xi'an 710062, China
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Xu L, Yin Z, Xiao Y, Zhao LD. Interstitials in Thermoelectrics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2406009. [PMID: 38814637 DOI: 10.1002/adma.202406009] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2024] [Revised: 05/22/2024] [Indexed: 05/31/2024]
Abstract
Defect structure is pivotal in advancing thermoelectric performance with interstitials being widely recognized for their remarkable roles in optimizing both phonon and electron transport properties. Diverse interstitial atoms are identified in previous works according to their distinct roles and can be classified into rattling interstitial, decoupling interstitial, interlayer interstitial, dynamic interstitial, and liquid interstitial. Specifically, rattling interstitial can cause phonon resonance in cage compound to scatter phonon transport; decoupling interstitial can contribute to phonon blocking and electron transport due to their significantly different mean free paths; interlayer interstitial can facilitate out-of-layer electron transport in layered compounds; dynamic interstitial can tune temperature-dependent carrier density and optimize electrical transport properties at wide temperatures; liquid interstitial could improve the carrier mobility at homogeneous dispersion state. All of these interstitials have positive impact on thermoelectric performance by adjusting transport parameters. This perspective therefore intends to provide a thorough overview of advances in interstitial strategy and highlight their significance for optimizing thermoelectric parameters. Finally, the profound potential for extending interstitial strategy to various other thermoelectric systems is discussed and some future directions in thermoelectric material are also outlined.
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Affiliation(s)
- Liqing Xu
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu, 611731, China
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Zhanxiang Yin
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Yu Xiao
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Li-Dong Zhao
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
- Tianmushan Laboratory, Yuhang District, Hangzhou, 311115, China
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6
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Li Y, Bai S, Wen Y, Zhao Z, Wang L, Liu S, Zheng J, Wang S, Liu S, Gao D, Liu D, Zhu Y, Cao Q, Gao X, Xie H, Zhao LD. Realizing high-efficiency thermoelectric module by suppressing donor-like effect and improving preferred orientation in n-type Bi 2(Te, Se) 3. Sci Bull (Beijing) 2024; 69:1728-1737. [PMID: 38688741 DOI: 10.1016/j.scib.2024.04.034] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/21/2024] [Revised: 03/19/2024] [Accepted: 04/10/2024] [Indexed: 05/02/2024]
Abstract
Thermoelectric materials have a wide range of application because they can be directly used in refrigeration and power generation. And the Bi2Te3 stand out because of its excellent thermoelectric performance and are used in commercial thermoelectric devices. However, n-type Bi2Te3 has seriously hindered the development of Bi2Te3-based thermoelectric devices due to its weak mechanical properties and inferior thermoelectric performance. Therefore, it is urgent to develop a high-performance n-type Bi2Te3 polycrystalline. In this work, we employed interstitial Cu and the hot deformation process to optimize the thermoelectric properties of Bi2Te2.7Se0.3, and a high-performance thermoelectric module was fabricated based on this material. Our combined theoretical and experimental effort indicates that the interstitial Cu reduce the defect density in the matrix and suppresses the donor-like effect, leading to a lattice plainification effect in the material. In addition, the two-step hot deformation process significantly improves the preferred orientation of the material and boosts the mobility. As a result, a maximum ZT of 1.27 at 373 K and a remarkable high ZTave of 1.22 across the temperature range of 300-425 K are obtained. The thermoelectric generator (TEG, 7-pair) and thermoelectric cooling (TEC, 127-pair) modules were fabricated with our n-type textured Cu0.01Bi2Te2.7Se0.3 coupled with commercial p-type Bi2Te3. The TEC module demonstrates superior cooling efficiency compared with the commercial Bi2Te3 device, achieving a ΔT of 65 and 83.4 K when the hot end temperature at 300 and 350 K, respectively. In addition, the TEG module attains an impressive conversion efficiency of 6.5% at a ΔT of 225 K, which is almost the highest value among the reported Bi2Te3-based TEG modules.
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Affiliation(s)
- Yichen Li
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Shulin Bai
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China; Tianmushan Laboratory, Hangzhou 311115, China
| | - Yi Wen
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Zhe Zhao
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Lei Wang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Shibo Liu
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Junqing Zheng
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Siqi Wang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Shan Liu
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Dezheng Gao
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Dongrui Liu
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Yingcai Zhu
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Qian Cao
- Huabei Cooling Device Co. LTD., Langfang 065400, China
| | - Xiang Gao
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Beijing 100094, China
| | - Hongyao Xie
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China.
| | - Li-Dong Zhao
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China; Tianmushan Laboratory, Hangzhou 311115, China.
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7
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Han Q, Zong PA, Liu H, Zhang Z, Shen K, Liu M, Mao Z, Song Q, Bai S. Advancing Thermoelectric Performance of Bi 2Te 3 below 400 K. ACS APPLIED MATERIALS & INTERFACES 2024; 16:27541-27549. [PMID: 38758664 DOI: 10.1021/acsami.4c03307] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/19/2024]
Abstract
Thermoelectric cooling devices utilizing Bi2Te3-based alloys have seen increased utilization in recent years. However, their thermoelectric performance remains inadequate within the operational temperature range (≤400 K), with limited research addressing this issue. In this study, we successfully modulated the carrier concentration of the sample through Te content reduction, consequently lowering the peak temperature of the zT value from 400 to 300 K. This led to a substantial enhancement in thermoelectric performance at room temperature (≤400 K). Furthermore, by doping with La, the electrical transport properties have been further optimized, and the lattice thermal conductivity has been effectively reduced at the same time; the average zT value was ultimately elevated from 0.69 to 0.9 within the temperature range of 300-400 K. These findings hold significant promise for enhancing the efficacy of existing thermoelectric cooling devices based on Bi2Te3-based alloys.
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Affiliation(s)
- Qingchen Han
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 210009, China
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Peng-An Zong
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 210009, China
| | - Heng Liu
- Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai 980-8577, Japan
| | - Ziming Zhang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Kelin Shen
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Miao Liu
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 210009, China
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Zhendong Mao
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 210009, China
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Qingfeng Song
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Shengqiang Bai
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
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Shi Q, Zhao X, Chen Y, Lin L, Ren D, Liu B, Zhou C, Ang R. Cu 2Te Incorporation-Induced High Average Thermoelectric Performance in p-Type Bi 2Te 3 Alloys. ACS APPLIED MATERIALS & INTERFACES 2022; 14:45582-45589. [PMID: 36170600 DOI: 10.1021/acsami.2c13527] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
p-Type (Bi, Sb)2Te3 alloys are attractive materials for near-room-temperature thermoelectric applications due to their high atomic masses and large spin-orbit interactions. However, their narrow band gaps originating from spin-orbit interactions lead to bipolar excitation, thereby limiting average thermoelectrics within a local temperature region (300-400 K). Here, we introduce Cu2Te into the Bi0.3Sb1.7Te3 (BST) lattice to implement high thermoelectrics over a wide temperature range. The carrier concentration is synergistically modulated via Cu substitution and the evolution of intrinsic point defects (antisites and vacancies). Furthermore, the chain effect caused by Cu2Te incorporation in BST is reflected in the improvement of the weighted mobility μW, thereby enhancing the power factor in the whole temperature range. Extrinsic and intrinsic defects due to the incorporation of Cu2Te lead to a significant reduction in the lattice thermal conductivity κL, which is further demonstrated by Raman spectroscopy. Combining κL and μW, the quantity factor B increases from 0.5 to 1 with increasing Cu2Te content due to not only the reduction of κL but also a significant improvement in electrical properties. Eventually, a peak figure of merit (zT) of ∼1.15 at 423 K is achieved in BST-Cu2Te samples, and an average figure of merit (zTave) of ∼1.12 (350-500 K) surpasses other excellent p-type Bi2Te3-based thermoelectrics. Such a synergistic effect can facilitate near-room-temperature thermoelectric applications of Bi2Te3-based alloys and provide chances for the technology space in thermoelectrics.
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Affiliation(s)
- Qing Shi
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
| | - Xuanwei Zhao
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
| | - Yiyuan Chen
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
| | - Liwei Lin
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
| | - Ding Ren
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
| | - Bo Liu
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
| | - Chunliang Zhou
- Yantai Research Institute, Harbin Engineering University, Yantai 264006, China
| | - Ran Ang
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
- Institute of New Energy and Low-Carbon Technology, Sichuan University, Chengdu 610065, China
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9
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Chen T, Ming H, Qin X, Zhu C, Chen Y, Ai L, Li D, Zhang Y, Xin HX, Zhang J. Enhancing thermoelectric performance of n-type Bi2Te2.7Se0.3 through incorporation of Ag9AlSe6 inclusions. Inorg Chem Front 2022. [DOI: 10.1039/d2qi01232d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Bi2Te2.7Se0.3 (BTS) is the best commercial n-type thermoelectric alloy near room temperatures. However, as compared to its p-type counterpart its figure of merit (ZT) and the energy conversion efficiency is...
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