Modification and Characterization of Interfacial Bonding for Thermal Management of Ruthenium Interconnects in Next-Generation Very-Large-Scale Integration Circuits

Measurements of Thermal Resistance Across Buried Interfaces with Frequency-Domain Thermoreflectance and Microscale Confinement

Confined geometries are used to increase measurement sensitivity to thermal boundary resistance at buried SiO2 interfaces with frequency-domain thermoreflectance (FDTR). We show that radial confinement of the transducer film and additional underlying material layers prevents heat from spreading and increases the thermal penetration depth of the thermal wave. Parametric analyses are performed with finite element methods and used to examine the extent to which the thermal penetration depth increases as a function of a material's effective thermal resistance and the degree of material confinement relative to the pump beam diameter. To our surprise, results suggest that the measurement technique is not always the most sensitive to the largest thermal resistor in a multilayer material. We also find that increasing the degree to which a material is confined improves measurement sensitivity to the thermal resistance across material interfaces that are buried 10s of μm to mm below the surface. These results are used to design experimental measurements of etched, 200 nm thick SiO2 films deposited on Al2O3 substrates, and offer an opportunity for thermal scientists and engineers to characterize the thermal resistance across a broader range of material interfaces within electronic device architectures that have historically been difficult to access via experiment.

N-heterocyclic carbene adsorption states on Pt(111) and Ru(0001)

N-heterocyclic carbene ligands (NHCs) are increasingly used to tune the properties of metal surfaces. The generally greater chemical and thermal robustness of NHCs on gold, as compared to thiolate surface ligands, underscores their potential for a range of applications. While much is now known about the adsorption geometry, overlayer structure, dynamics, and stability of NHCs on coinage elements, especially gold and copper, much less is known about their interaction with the surfaces of Pt-group metals, despite the importance of such metals in catalysis and electrochemistry. In this study, reflection absorption infrared spectroscopy (RAIRS) is used to probe the structure of benzimidazolylidene NHC ligands on Pt(111) and Ru(0001). The experiments exploit the intense absorption peaks of a CF3 substituent on the phenyl ring of the NHC backbone to provide unprecedented insight into adsorption geometry and chemical stability. The results also permit comparison with literature data for NHC ligands on Au(111) and to DFT predictions for NHCs on Pt(111) and Ru(0001), thereby greatly extending the known surface chemistry of NHCs and providing much needed molecular information for the design of metal-organic hybrid materials involving strongly reactive metals.

Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review

Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditional Si-based semiconductors in terms of high-power and high-frequency operations. As it has superior properties, such as high operating temperatures, high-frequency operation, high breakdown electric field, and enhanced radiation resistance, GaN is applied in various fields, such as power electronic devices, renewable energy systems, light-emitting diodes, and radio frequency (RF) electronic devices. For example, GaN-based high-electron-mobility transistors (HEMTs) are used widely in various applications, such as 5G cellular networks, satellite communication, and radar systems. When a current flows through the transistor channels during operation, the self-heating effect (SHE) deriving from joule heat generation causes a significant increase in the temperature. Increases in the channel temperature reduce the carrier mobility and cause a shift in the threshold voltage, resulting in significant performance degradation. Moreover, temperature increases cause substantial lifetime reductions. Accordingly, GaN-based HEMTs are operated at a low power, although they have demonstrated high RF output power potential. The SHE is expected to be even more important in future advanced technology designs, such as gate-all-around field-effect transistor (GAAFET) and three-dimensional (3D) IC architectures. Materials with high thermal conductivities, such as silicon carbide (SiC) and diamond, are good candidates as substrates for heat dissipation in GaN-based semiconductors. However, the thermal boundary resistance (TBR) of the GaN/substrate interface is a bottleneck for heat dissipation. This bottleneck should be reduced optimally to enable full employment of the high thermal conductivity of the substrates. Here, we comprehensively review the experimental and simulation studies that report TBRs in GaN-on-SiC and GaN-on-diamond devices. The effects of the growth methods, growth conditions, integration methods, and interlayer structures on the TBR are summarized. This study provides guidelines for decreasing the TBR for thermal management in the design and implementation of GaN-based semiconductor devices.

Hot-Pressing Deformation Yields Fine-Grained, Highly Dense and (002) Textured Ru Targets

Ruthenium (Ru) is a refractory metal that has applications in the semiconductor industry as a sputtering target material. However, conventional powder metallurgy methods cannot produce dense and fine-grained Ru targets with preferred orientation. Here, we present a novel method of hot-pressing deformation to fabricate Ru targets with high relative density (98.8%), small grain size (~4.4 μm) and strong (002) texture. We demonstrate that applying pressures of 30-40 MPa at 1400 °C transforms cylindrical Ru samples into disk-shaped targets with nearly full densification in the central region. We also show that the hardness and the (002)/(101) peak intensity ratio of the targets increase with the pressure, indicating enhanced mechanical and crystallographic properties. Our study reveals the mechanisms of densification and texture formation of Ru targets by hot-pressing deformation.