Semipolar (112̅2) AlGaN-Based Solar-Blind Ultraviolet Photodetectors with Fast Response

Polarization-Sensitive Solar-Blind Ultraviolet Photodetectors Based on Semipolar (112̅2) AlGaN Film

Wide bandgap semiconductor AlGaN alloys have been identified as key materials to fabricate solar-blind ultraviolet photodetectors (SBUV PDs). Herein, a self-driven SBUV polarization-sensitive PD (PSPD) based on semipolar (112̅2)-oriented AlGaN films is reported. Using the flow-rate modulation epitaxy method, the full widths at half maximum (FWHMs) for the obtained (112̅2) AlGaN along [112̅3̅] and [11̅00] rocking curves are 0.205° and 0.262°, respectively, representing the best results for heteroepitaxial semipolar AlGaN so far. Density functional theory calculations and experimental results reveal that semipolar AlGaN possesses in-plane anisotropy. The self-driven (112̅2) AlGaN PSPDs exhibit strong polarization-sensitive photoresponse with a polarization ratio of 1.54 at 266 nm and rapid response of 450/450 ms compared to other low-dimensional semiconductor materials. More interestingly, we observe positive and negative photoresponse behaviors under UV light illumination due to surface states and charge transfer. Our results may enable potential applications in multifunctional SBUV optoelectronic devices.

Recent progress of group III-V materials-based nanostructures for photodetection

Due to the suitable bandgap structure, efficient conversion rates of photon to electron, adjustable optical bandgap, high electron mobility/aspect ratio, low defects, and outstanding optical and electrical properties for device design, III-V semiconductors have shown excellent properties for optoelectronic applications, including photodiodes, photodetectors, solar cells, photocatalysis, etc. In particular, III-V nanostructures have attracted considerable interest as a promising photodetector platform, where high-performance photodetectors can be achieved based on the geometry-related light absorption and carrier transport properties of III-V materials. However, the detection ranges from Ultraviolet to Terahertz including broadband photodetectors of III-V semiconductors still have not been more broadly development despite significant efforts to obtain the high performance of III-V semiconductors. Therefore, the recent development of III-V photodetectors in a broad detection range from Ultraviolet to Terahertz, and future requirements are highly desired. In this review, the recent development of photodetectors based on III-V semiconductor with different detection range is discussed. First, the bandgap of III-V materials and synthesis methods of III-V nanostructures are explored, subsequently, the detection mechanism and key figures-of-merit for the photodetectors are introduced, and then the device performance and emerging applications of photodetectors are provided. Lastly, the challenges and future research directions of III-V materials for photodetectors are presented.

High performance solar-blind UV detector with Mg0.472Zn0.528O/Mg0.447Zn0.553O double layer structure on MgO substrate

Mg0.472Zn0.528O/Mg0.447Zn0.553O double layer structure UV detectors are made on single structure MgO substrate by PLD method, and the effect of different thickness top MgZnO layer on the UV response characteristics of the detector are studied. Compared with the single layer MgZnO detector that made by Mg0.3Zn0.7O target, the Mg0.472Zn0.528O/Mg0.447Zn0.553O double layer detector with 30 nm top layer, shows much higher deep UV response (21.3 A W-1at 265 nm), much smaller dark current(66.9 pA) and much higher signal-to-noise ratio (2.8 × 105) at 25 V bias voltage. And the device also shows relative high response (23.1 A W-1) at 235 nm deep UV light at 25 V bias voltage, which is mainly attributed by the bottom MgZnO layer with higher Mg composition. When the top layer is 66.7 nm thick, the response of the Mg0.472Zn0.528O/Mg0.447Zn0.553O detector reached 228.8 A W-1at 255 nm under 25 V bias voltage, the signal-to-noise ratio of which is 10573 under 20 V bias voltage, and the near UV response of the device is also big because of more h-MgZnO in top MgZnO layer. When the top layer reached 90.2 nm, there are much more h-MgZnO in the top MgZnO layer, the peak response of the Mg0.472Zn0.528O/Mg0.447Zn0.553O detector is just 6.65 A W-1at 320 nm under 25 V bias voltage, the signal-to-noise ratio of which is 1248. The high Mg composition bottom MgZnO decrease the dark current of the Mg0.472Zn0.528O/Mg0.447Zn0.553O detector, both the 2DEG effect of the double layer structure and the amplify effect of the mix-phase MgZnO top layer, increased theIuvand deep UV response of the Mg0.472Zn0.528O/Mg0.447Zn0.553O detector. Therefore, the double layer Mg0.472Zn0.528O/Mg0.447Zn0.553O detector is more sensitive at faint deep UV light compared with previous reported MgZnO detectors, and the MgxZn1-xO/MgyZn1-yO detector shows similarIuvand signal-noise-ratio at faint deep UV light as high-temperature fabricated AlxGa1-xN/AlyGa1-yN detectors.

Tuning oxygen vacancies in epitaxial LaInO3 films for ultraviolet photodetection

LaInO₃ (LIO) represents a new, to the best of knowledge, type of perovskite oxides for deep-ultraviolet (DUV) photodetection owing to the wide bandgap nature (∼5.0 eV) and the higher tolerance of defect engineering for tunable carrier transport. Here we fabricate fast-response DUV photodetectors based on epitaxial LIO thin films and demonstrate an effective strategy for balancing the photodetector performance using the oxygen growth pressure as a simple control parameter. Increasing the oxygen pressure is effective to suppress the oxygen vacancy formation in LIO, which is beneficial to suppress the dark current and enhance the response speed. The optimized LIO photodetector achieves a fast rise/fall time of 20 ms/73 ms, a low dark current of 2.0 × 10^-12 A, a photo-to-dark current ratio of 1.2 × 10³, and a detectivity of 6 × 10¹² Jones.