Solution-Processed Red, Green, and Blue Quantum Rod Light-Emitting Diodes

Transition from Light-Induced Phase Reconstruction to Halide Segregation in CsPbBr3-xIx Nanocrystal Thin Films

Inorganic metal-halide perovskite materials pave the way for many applications ranging from optoelectronics to quantum information due to their low cost, high photoluminescence and energy conversion efficiencies. However, light-induced bandgap instability due to ion migration in mixed-halide perovskites remains a significant challenge to the efficiency of optoelectronic devices. Thus, we combined hyperspectral fluorescence microspectroscopy and computational methods to understand the underlying transition mechanism between phase reconstruction and segregation in CsPbBr3-xIx (0 < x < 3) nanocrystal thin films. Our outcomes have shown that samples with x = 1.0 and x = 1.5 exhibit halide migration, favoring Br enrichment locally. In this case, an interplay between photo and thermal activation promotes the expulsion of I- from the perovskite lattice and generates a reconstruction of Br-rich domains, forming the CsPbBr3 phase. Thus, thermodynamic parameters such as the halide activation energy and phase reconstruction diffusibility were obtained by combining the kinetic parameters from linear unmixing data and Fick's second law. Moreover, we observed that the Br-I interdiffusion followed an Arrhenius-like behavior over laser-induced temperature increase. On the other hand, for samples with x = 2.0, phase segregation occurred due to the larger CsPbBrI2 nanocrystal size, iodine content and the high laser intensity employed. These three combined effects modify transport and recombination due to the reduction of charge carrier diffusion length (LD = 10.2 nm) and bandgap. Thus, iodide ions diffuse from the nanocrystal surface to the core forming a "type-II heterostructure", promoting a red shift in the fluorescence spectrum, which is characteristic of phase segregation. Furthermore, real-time dark recovery of light-induced halide segregation is reported for CsPbBrI2 nanocrystal thin films. Finally, the possible halide migration mechanism and physical origins of the transition between these phenomena are pointed out.

Blue CdSe/CdS core/crown nanoplatelet light-emitting diodes obtained via a design-of-experiments approach

Obtaining efficient blue emission from CdSe nanoplatelets (NPLs) remains challenging due to charge trapping and sub-bandgap emission. Thanks to a design-of-experiments (DoE) approach, we significantly improved the NPL synthesis, obtaining precise control over the lateral aspect ratio (length/width). We raised the photoluminescence quantum efficiency up to 66% after growth of a CdS crown, with complete elimination of trap-state emission. Using these 3.5 monolayer, blue-emitting CdSe/CdS core/crown NPLs (λ = 460 nm), we fabricated light-emitting diodes (LEDs) with narrowband (16 nm) blue electroluminescence, an external quantum efficiency of 1.3% and low turn-on voltage of 2.9 V after DoE optimization. Our findings show that NPLs are a promising system to obtain LEDs that emit a saturated blue color.

Robust, Narrow-Band Nanorods LEDs with Luminous Efficacy > 200 lm/W: Next-Generation of Efficient Solid-State Lighting

Energy-efficient white light-emitting diodes (LEDs) are in high demand across the society. Despite the significant advancements in the modern lighting industry based on solid-state electronics and inorganic phosphor, solid-state lighting (SSL) continues to pursue improved efficiency, saturated color performance, and longer lifetime. Here in this article, robust, narrow emission band nanorods (NRs) are disclosed with tailored wavelengths, aiming to enhance the color rendering index (CRI) and luminous efficacy (LE). The fabricated lighting device consists of NRs of configuration CdSe/ZnxCd1-xS/ZnS, which can independently tune CRI R1-R9 values and maximize the luminous efficacy. For general lighting, NRs with quantum yield (QY) up to 96% and 99% are developed, resulting in ultra-efficient LEDs reaching a record high luminous efficacy of 214 lm W-1 (certified by the National Accreditation Service). Furthermore, NRs are deployed onto mid-power (0.3 W@ 50 mA) LEDs, showing significantly enhanced long-term stability (T95 = 400 h @ 50 mA). With these astonishing properties, the proposed NRs can pave the way for efficient lighting with desired optical spectrum.

Inverted All-Inorganic Nanorod-Based Light-Emitting Diodes via Electrophoretic Deposition

High performance and high stability in all-inorganic solution processed nanocrystal-based light-emitting diodes (LEDs) are highly attractive for large area devices compared to organic material-based LEDs. In this work, an inverted all-inorganic LED structure is designed to have an easy integration with thin-film transistors. Adopting robust inorganic materials such as Ni1-x O nanoparticle films as a hole transport layer (HTL) is beneficial for the performance of LED. Herein, we have optimized the HTL by introducing Mg into Ni1-x O to bridge the difference in energy offset between the nanorod emissive layer and the HTL, in addition to the advantages of low temperature solubility of Ni1-x O:Mg nanoparticles. Furthermore, CdSe/CdS-based nanorods via electrophoretic deposition (EPD) are amassed in a vertically aligned (VA-NR) fashion as an emissive layer to facilitate the carrier transportation. Fostering these approaches enabled an EQE of 1.2% of the fabricated device, establishing the viability for further development of efficient and highly stable nanocrystal-based LEDs.

Perovskite Light-Emitting Diodes with Quantum Wires and Nanorods

Perovskite materials, celebrated for their exceptional optoelectronic properties, have seen extensive application in the field of light-emitting diodes (LEDs), where research is as abundant as the proverbial "carloads of books." In this review, the research of perovskite materials is delved into from a dimensional perspective, with a focus on the exemplary performance of low-dimensional perovskite materials in LEDs. This discussion predominantly revolves around perovskite quantum wires and perovskite nanorods. Perovskite quantum wires are versatile in their growth, compatible with both solution-based and vapor-phase growth, and can be deposited over large areas-even on spherical substrates-to achieve commendable electroluminescence (EL). Perovskite nanorods, on the other hand, boast a suite of superior characteristics, such as polarization properties and tunability of the transition dipole moment, endowing them with the great potential to enhance light extraction efficiency. Furthermore, zero-dimensional (0D) perovskite materials like nanocrystals (NCs) are also the subject of widespread research and application. This review reflects on and synthesizes the unique qualities of the aforementioned materials while exploring their vital roles in the development of high-efficiency perovskite LEDs (PeLEDs).

Synthesis and Optical Properties of CdSeTe/CdZnS/ZnS Core/Shell Nanorods

Semiconductor nanorods (NRs) have great potential in optoelectronic devices for their unique linearly polarized luminescence which can break the external quantum efficiency limit of light-emitting diodes (LEDs) based on spherical quantum dots. Significant progress has been made for developing red, green, and blue light-emitting NRs. However, the synthesis of NRs emitting in the deep red region, which can be used for accurate red LED displays and promoting plant growth, is currently less explored. Here, we report the synthesis of deep red CdSeTe/CdZnS/ZnS dot-in-rod core/shell NRs via a seeded growth method, where the doping of Te in the CdSe core can extend the NR emission to the deep red region. The rod-shaped CdZnS shell is grown over CdSeTe seeds. By growing a ZnS passivation shell, the CdSeTe/CdZnS/ZnS NRs exhibit a photoluminescence emission peak at 670 nm, a full width at a half maximum of 61 nm and a photoluminescence quantum yield of 45%. The development of deep red NRs can greatly extend the applications of anisotropic nanocrystals.

High-Efficiency and Stable Colloidal One-Dimensional Core/Shell Nanorod Light-Emitting Diodes

Anisotropic nanocrystals such as nanorods (NRs) display unique linearly polarized emission, which is expected to break the external quantum efficiency (EQE) limit of quantum dot-based light-emitting diodes (LEDs). However, the progress in achieving a higher EQE using NRs encounters several challenges, primarily involving a low photoluminescence quantum yield (PLQY) of NRs and imbalanced charge injection in NR-LEDs. In this work, we investigated NR-LEDs based on CdSe/CdZnS/ZnS rod-in-rod NRs with a high PLQY and higher linear polarization compared to those of dot-in-rod NRs. The balanced charge injection is achieved using ZnMgO nanoparticles as the electron transport layer and poly-TPD {poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine]} as the hole transport layer. Therefore, the NR-LEDs exhibit a maximum EQE of 21.5% and a maximum luminance of >120 000 cd/m2 owing to the high level of in-plane transitions with a dipole moment of 90%. The NR-LEDs also have greatly inhibited droop in EQE under a high current density as well as outstanding operation lifetime and cycle stability.

22% Record Efficiency in Nanorod Light-Emitting Diodes Achieved by Gradient Shells

The external quantum efficiency (EQE) in light-emitting diodes (LEDs) based on isotropic quantum dots has approached the theoretical limit of close to 20%. Anisotropic nanorods can break this limit by taking advantage of their directional emission. However, the progress towards higher EQE by using CdSe/CdS nanorods (NRs) faces several challenges, primarily involving the low quantum yield and unbalanced charge injection in devices. Herein, the seeded growth method is modified and anisotropic nanorods are obtained with photoluminescence quantum yield up to 98% by coating a gradient alloyed CdZnSe shell around conventional spherical CdSe seeds. This intermediate alloyed CdZnSe shell combined with a subsequent rod-shaped CdZnS/ZnS shell can effectively suppress the electron delocalization in the typical CdSe/CdS nanorods due to their small conduction bandgap offset. Additionally, this alloyed shell can reduce the hole-injection barrier and create a larger barrier for electron injection, both effects promoting a balanced injection of electrons and holes in LEDs. Hence, LEDs are reached with high brightness (160341 cd m-2) and high efficiency (EQE = 22%, current efficiency = 23.19 cd A-1), which are the highest values to date for nanorod LEDs.

Ultralow Roll-Off Quantum Dot Light-Emitting Diodes Using Engineered Carrier Injection Layer

Quantum dot (QD) light-emitting diodes (QLEDs) have attracted extensive attention due to their high color purity, solution-processability, and high brightness. Due to extensive efforts, the external quantum efficiency (EQE) of QLEDs has approached the theoretical limit. However, because of the efficiency roll-off, the high EQE can only be achieved at relatively low luminance, hindering their application in high-brightness devices such as near-to-eye displays and lighting applications. Here, this article reports an ultralow roll-off QLED that is achieved by simultaneously blocking electron leakage and enhancing the hole injection, thereby shifting the recombination zone back to the emitting QDs layer. These devices maintain EQE over 20.6% up to 1000 mA cm-2 current density, dropping only by ≈5% from the peak EQE of 21.6%, which is the highest value ever reported for the bottom-emitting red QLEDs. Furthermore, the maximum luminance of the optimal device reaches 320 000 cd m-2 , 2.7 times higher than the control device (Lmax : 128 000 cd m-2 ). A passive matrix (PM) QLED display panel with high brightness based on the optimized device structure is also demonstrated. The proposed approach advances the potential of QLEDs to operate efficiently in high-brightness scenarios.

Inkjet printed patterned bank structure with encapsulated perovskite colour filters for modern display

Inorganic multicolour perovskite nanocrystals (NCs) of CsPbX₃ (X = Cl, Br, I) with high photoluminescence (PL) quantum yield (QY) and saturated colours are considered promising candidates for a high-performance colour conversion layer. However, integration of these materials into industrial applications still faces a significant challenge due to their tendency for aggregation and quenching of the emission during deposition and processing. In this work, we explore a new ink composition with oleylamine (OLA) and hexylphosphonic acid (HPA) ligands in combination with a liquid crystal monomer (LCM) composing a superior solution for an inkjet-printed colour conversion layer. This work provides a simple technique for preparing high-quality perovskite pixels for high-performance displays.