Low-Temperature Vapor-Phase Anion-Exchange Strategy for Wide-Bandgap Double-Perovskite Cs2AgBiCl6 Films toward Weak Ultraviolet Light Imaging

Composition-Tunable Bandgap Engineering of Horizontally Guided CdSxSe1-x Nanowalls for High-Performance Photodetectors

Composition-adjustable semiconductor nanomaterials have garnered significant attention due to their controllable bandgaps and electronic structures, providing alternative opportunities to regulate photoelectric properties and develop the corresponding multifunction optoelectronic devices. Nevertheless, the large-scale integration of semiconductor nanomaterials into practical devices remains challenging. Here, we report a synthesis strategy for the well-aligned horizontal CdSxSe1-x (x = 0-1) nanowall arrays, which are guided grown on an annealed M-plane sapphire using chemical vapor deposition (CVD) approaches. Microstructural characterizations demonstrate these structures as horizontally guided nanowalls with high-quality crystallinity. Microphotoluminescence (μ-PL) reveals the CdSxSe1-x nanowalls exhibiting continuously tunable spontaneous emissions from 509 nm (pure CdS) to 713 nm (pure CdSe), further confirming that CdSxSe1-x alloys have a continuously tunable bandgap. Notably, a photodetector based on CdSxSe1-x nanowalls displays excellent photoelectric performance, such as high responsivity (3 × 102 ∼ 1 × 103 A/W), high external quantum efficiency (1.01 × 103 ∼ 2.93 × 103), and fast response speed in the millisecond magnitude. Furthermore, the CdS nanowall-based photodetectors exhibit a remarkable image-sensing capability, indicating potential applications in high-performance image sensing in the future. Bandgap continuously tunable nanowall arrays with high-quality crystallinity inject great vitality into the manufacturing of high-performance integrated optoelectronic devices.

Multicolor vision perception of flexible optoelectronic synapse with high sensitivity for skin sunburn warning

The development of flexible synaptic devices with multicolor signal response is important to exploit advanced artificial visual perception systems. The Sn vacancy-dominant memory and narrow gap characteristics of PEA2SnI4 make it suitable as a functional layer in ultraviolet-visible (UV-Vis) light-stimulated synaptic devices. However, such device tends to have high dark current and poor sensitivity, which is not conducive to subsequent information processing. Here, we proposed a self-powered flexible optoelectronic synapse based on PEA2SnI4 films. By introducing the electron transport layer (ETL), the dark current of the device is decreased by 5 orders of magnitude as compared to the Au/PEA2SnI4/ITO device, and the sensitivity is increased from 10.3% to 99.2% at 1.25 mW cm-2 light illumination (520 nm), indicating the vital role of the introduced ETL in promoting the separation of excitons in the interface and inhibiting the free carrier transfer. On this basis, the optoelectronic synaptic functions with integrated sensing, recognition, and memory features were realized. The array device exhibits UV-Vis light sensitivity and tunable synaptic plasticity, enabling its application for multicolor visual sensing and skin sunburn warning. This work provides an effective strategy for fabricating multicolor intelligent sensors and artificial vision systems, which facilitate the practical application of artificial optoelectronic synapses.

Multifunctional Regioisomeric Passivation Strategy for Fabricating Self-Driving, High Detectivity All-Inorganic Perovskite Photodetectors

The fluorination of the aromatic multifunctional Lewis base passivation strategy has been demonstrated recently as an effective approach to markedly enhance the performance of perovskite photovoltaic devices. However, the regulation mechanisms of the passivation efficiency by varying the functional group position of fluorine (F) in the regioisomers have received little attention and inadequate research. Herein, a pair of bifluorine-substituted aminobenzoic acid regioisomers [3-amino-2,6-difluorobenzoic acid (13-FABA) and 4-amino-3,5-difluorobenzoic acid (14-FABA)] were employed to investigate the passivation effects of Lewis bases dependent on behaviors of the ortho/meta-substituted position of fluorine. The density functional theory calculation on electron cloud density, interaction energy, and the basicity of Lewis bases combined with experimental evidence reveal that the ortho-effect induced by fluorine substitution weakens the passivating effect of 13-FABA Lewis base and induces its molecular propensity to form internal salts, accelerating the degradation and deterioration of the device performance. Conversely, 14-FABA with meta-connected fluorine atoms exhibit superior efficacy in suppressing defects and enhancing hydrophobicity. Eventually, the 14-FABA-modified photodetectors (PDs) achieved a high detectivity of 1.69 × 1013 Jones, the comparatively lower dark current density of 2.2 × 10-10 A/cm2 among all-inorganic perovskite PD systems. Our work has not only clarified the fundamental mechanisms of the F-substituted position effects of Lewis base on suppressing defects but also provided a promising passivation strategy for perovskite films via designing the regioisomeric atoms in a multifunctional Lewis base molecule.

Comment on "Charge Transfer-Triggered Bi3+ Near-Infrared Emission in Y2Ti2O7 for Dual-Mode Temperature Sensing"

Undoped Y2Ti2O7 exhibits impurity emission bands at low temperatures due to Mn4+ and Cr3+, as established by codoping with these ions. Contrary to a recent report by Wang et al., ACS Appl. Mater. Interfaces 2022, 14, 36834-36844, we do not observe Bi3+ emission in this codoped host, as also is the case for Fe3+. The emission reported in that paper as being due to Bi3+ in fact corresponds to Cr3+ emission. The Cr3+ and Mn4+ emissions are quenched with increasing temperature, so that Mn4+ emission is scarcely observed above 80 K. We present variable temperature optical data for Y2Ti2O7 and this host codoped with Mn, Cr, Fe, and Bi, as well as a theoretical justification of our results.

Lead-free all-inorganic halide double perovskite materials for optoelectronic applications: progress, performance and design

The geometrical and electronic structures of all-inorganic halide double perovskites and their applications in optoelectronic devices are reviewed. Novel design methods are desirable to develop this type of perovskite with superior performance.