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Matei AT, Visan AI, Negut I. Laser-Fabricated Micro/Nanostructures: Mechanisms, Fabrication Techniques, and Applications. MICROMACHINES 2025; 16:573. [PMID: 40428699 PMCID: PMC12114160 DOI: 10.3390/mi16050573] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/13/2025] [Revised: 05/08/2025] [Accepted: 05/12/2025] [Indexed: 05/29/2025]
Abstract
The rapid evolution of optoelectronic devices necessitates innovative fabrication techniques to improve their performance and functionality. This review explores the advancements in laser processing as a versatile method for creating micro- and nanostructured surfaces, tailored to enhance the efficiency of optoelectronic applications. We begin by elucidating the fundamental mechanisms underlying laser interactions with materials, which facilitate the precise engineering of surface topographies. Following this, we systematically review various micro/nanostructures fabricated by laser techniques, such as laser ablation, laser-induced periodic surface structures (LIPSS), and two-photon polymerization, highlighting their unique properties and fabrication parameters. The review also delves into the significant applications of these laser-fabricated surfaces in optoelectronic devices, including photovoltaics, photodetectors, and sensors, emphasizing how tailored surface structures can lead to improved light absorption, enhanced charge carrier dynamics, and optimized device performance. By synthesizing current knowledge and identifying emerging trends, this work aims to inspire future research directions in the design and application of laser-fabricated micro/nanostructures within the field of optoelectronics. Our findings underscore the critical role of laser technology in advancing the capabilities of next-generation optoelectronic devices, aligning with the scope of emerging trends in device engineering.
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Affiliation(s)
- Andrei Teodor Matei
- IT Center for Science and Technology, 25 No. Av. Radu Beller, 011702 Bucharest, Romania;
| | - Anita Ioana Visan
- National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Street, P.O. Box MG 36, 077125 Magurele, Romania
| | - Irina Negut
- National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Street, P.O. Box MG 36, 077125 Magurele, Romania
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Liu S, Xu X, Zhou J, Jiang Y, Liu X, Kuai Y, Yu B, Li S. Destruction for growth: a novel laser direct writing perovskite strategy with intelligent anti-counterfeiting applications. NANOSCALE HORIZONS 2025; 10:896-904. [PMID: 40125819 DOI: 10.1039/d4nh00612g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/25/2025]
Abstract
Perovskites are widely acknowledged as promising optoelectronic materials due to their superior carrier mobility, high optical absorption coefficient, and versatile structural design. Among the various synthesis methods, laser direct writing (LDW) of perovskites has demonstrated unique and promising applications in precise patterning and the fabrication of perovskite-based devices. In this study, we propose a novel mechanism for LDW perovskites: laser destruction-induced perovskite growth. Unlike previous LDW technologies that rely on thermal effects and photon absorption-induced nucleation, our approach uses a pulsed laser to rapidly disrupt the stress-rich perovskite precursor phosphate glass surface within a truly short duration. The release of stress and the reverse movement shear band effect of phosphate glass bring Cs, Pb, and Br atoms into closer proximity, facilitating the nucleation and growth of perovskite crystals. Meanwhile, the broken P-O-P bonds provide the necessary energy for this nucleation and growth process. Utilizing this mechanism, we have successfully etched intricate perovskite patterns on the glass surface with high precision. Furthermore, this unique light destruction-induced perovskite growth strategy can be integrated with artificial intelligence and deep learning algorithms to fabricate various anti-counterfeiting patterns. Our proposed laser destruction-induced precipitation strategy enriches the current understanding of LDW perovskites and demonstrates significant potential and promise in optoelectronics.
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Affiliation(s)
- Shoufang Liu
- School of Physics and Optoelectronic Engineering, Anhui University, Hefei, 230601, Anhui, P. R. China.
- National Key Laboratory of Opto-Electronic Information Acquisition and Protection Technology, Anhui University, Hefei, 230601, Anhui, P. R. China
| | - Xiangyu Xu
- School of Physics and Optoelectronic Engineering, Anhui University, Hefei, 230601, Anhui, P. R. China.
- National Key Laboratory of Opto-Electronic Information Acquisition and Protection Technology, Anhui University, Hefei, 230601, Anhui, P. R. China
| | - Jie Zhou
- School of Physics and Optoelectronic Engineering, Anhui University, Hefei, 230601, Anhui, P. R. China.
- National Key Laboratory of Opto-Electronic Information Acquisition and Protection Technology, Anhui University, Hefei, 230601, Anhui, P. R. China
| | - Yuxuan Jiang
- School of Physics and Optoelectronic Engineering, Anhui University, Hefei, 230601, Anhui, P. R. China.
- Center of Free Electron Laser & High Magnetic Field, Anhui University, Hefei, 230601, Anhui, P. R. China
| | - Xue Liu
- Center of Free Electron Laser & High Magnetic Field, Anhui University, Hefei, 230601, Anhui, P. R. China
| | - Yan Kuai
- National Key Laboratory of Opto-Electronic Information Acquisition and Protection Technology, Anhui University, Hefei, 230601, Anhui, P. R. China
| | - Benli Yu
- School of Physics and Optoelectronic Engineering, Anhui University, Hefei, 230601, Anhui, P. R. China.
- National Key Laboratory of Opto-Electronic Information Acquisition and Protection Technology, Anhui University, Hefei, 230601, Anhui, P. R. China
| | - Siqi Li
- School of Physics and Optoelectronic Engineering, Anhui University, Hefei, 230601, Anhui, P. R. China.
- National Key Laboratory of Opto-Electronic Information Acquisition and Protection Technology, Anhui University, Hefei, 230601, Anhui, P. R. China
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Cai B, Jiang H, Bai R, Zhu S, Zhang Y, Yu H, Gu M, Zhang Q. Three-Dimensional High-Resolution Laser Lithography of CsPbBr 3 Quantum Dots in Photoresist with Sub-100 nm Feature Size. NANOMATERIALS (BASEL, SWITZERLAND) 2025; 15:531. [PMID: 40214576 PMCID: PMC11990146 DOI: 10.3390/nano15070531] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/20/2025] [Revised: 03/26/2025] [Accepted: 03/27/2025] [Indexed: 04/14/2025]
Abstract
Perovskite quantum dots (PQDs), with their excellent optical properties, have become a leading semiconductor material in the field of optoelectronics. However, to date, it has been a challenge to achieve the three-dimensional high-resolution patterning of perovskite quantum dots. In this paper, an in situ femtosecond laser-direct-writing technology was demonstrated for three-dimensional high-resolution patterned CsPbBr3 PQDs using a two-photon photoresist nanocomposite doped with the CsPbBr3 perovskite precursor. By adjusting the laser processing parameters, the minimum line width of the PQDs material was confirmed to be 98.6 nm, achieving a sub-100 nm PQDs nanowire for the first time. In addition, the fluorescence intensity of the laser-processed PQDs can be regulated by the laser power. Our findings provide a new technology for fabricating high-resolution display devices based on laser-direct-writing CsPbBr3 PQDs materials.
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Affiliation(s)
- Boyuan Cai
- School of Artificial Intelligence Science and Technology, University of Shanghai for Science and Technology, Shanghai 200093, China; (H.J.); (R.B.); (S.Z.); (Y.Z.); (M.G.)
- Institute of Photonic Chips, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Haoran Jiang
- School of Artificial Intelligence Science and Technology, University of Shanghai for Science and Technology, Shanghai 200093, China; (H.J.); (R.B.); (S.Z.); (Y.Z.); (M.G.)
- Institute of Photonic Chips, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Run Bai
- School of Artificial Intelligence Science and Technology, University of Shanghai for Science and Technology, Shanghai 200093, China; (H.J.); (R.B.); (S.Z.); (Y.Z.); (M.G.)
- Institute of Photonic Chips, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Shengting Zhu
- School of Artificial Intelligence Science and Technology, University of Shanghai for Science and Technology, Shanghai 200093, China; (H.J.); (R.B.); (S.Z.); (Y.Z.); (M.G.)
- Institute of Photonic Chips, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Yinan Zhang
- School of Artificial Intelligence Science and Technology, University of Shanghai for Science and Technology, Shanghai 200093, China; (H.J.); (R.B.); (S.Z.); (Y.Z.); (M.G.)
- Institute of Photonic Chips, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Haoyi Yu
- School of Artificial Intelligence Science and Technology, University of Shanghai for Science and Technology, Shanghai 200093, China; (H.J.); (R.B.); (S.Z.); (Y.Z.); (M.G.)
- Institute of Photonic Chips, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Min Gu
- School of Artificial Intelligence Science and Technology, University of Shanghai for Science and Technology, Shanghai 200093, China; (H.J.); (R.B.); (S.Z.); (Y.Z.); (M.G.)
- Institute of Photonic Chips, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Qiming Zhang
- School of Artificial Intelligence Science and Technology, University of Shanghai for Science and Technology, Shanghai 200093, China; (H.J.); (R.B.); (S.Z.); (Y.Z.); (M.G.)
- Institute of Photonic Chips, University of Shanghai for Science and Technology, Shanghai 200093, China
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Liu Y, Ma Z, Zhang J, He Y, Dai J, Li X, Shi Z, Manna L. Light-Emitting Diodes Based on Metal Halide Perovskite and Perovskite Related Nanocrystals. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025:e2415606. [PMID: 39887795 DOI: 10.1002/adma.202415606] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/13/2024] [Revised: 12/18/2024] [Indexed: 02/01/2025]
Abstract
Light-emitting diodes (LEDs) based on halide perovskite nanocrystals have attracted extensive attention due to their considerable luminescence efficiency, wide color gamut, high color purity, and facile material synthesis. Since the first demonstration of LEDs based on MAPbBr3 nanocrystals was reported in 2014, the community has witnessed a rapid development in their performances. In this review, a historical perspective of the development of LEDs based on halide perovskite nanocrystals is provided and then a comprehensive survey of current strategies for high-efficiency lead-based perovskite nanocrystals LEDs, including synthesis optimization, ion doping/alloying, and shell coating is presented. Then the basic characteristics and emission mechanisms of lead-free perovskite and perovskite-related nanocrystals emitters in environmentally friendly LEDs, from the standpoint of different emission colors are reviewed. Finally, the progress in LED applications is covered and an outlook of the opportunities and challenges for future developments in this field is provided.
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Affiliation(s)
- Ying Liu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, China
| | - Zhuangzhuang Ma
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, China
| | - Jibin Zhang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, China
| | - Yanni He
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Jinfei Dai
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, China
| | - Xinjian Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, China
| | - Zhifeng Shi
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, China
| | - Liberato Manna
- Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, Genova, 16163, Italy
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Xu X, Liu S, Kuai Y, Jiang Y, Hu Z, Yu B, Li S. Laser Fabrication of Multi-Dimensional Perovskite Patterns with Intelligent Anti-Counterfeiting Applications. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2309862. [PMID: 39120553 PMCID: PMC11558149 DOI: 10.1002/advs.202309862] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/15/2023] [Revised: 06/05/2024] [Indexed: 08/10/2024]
Abstract
Perovskites have gained widespread attention across various fields such as photovoltaics, displays, and imaging. Despite their promising applications, achieving precise and high-quality patterning of perovskite films remains a challenge. In this study, femtosecond laser direct writing technology is utilized to achieve rapid and highly precise micro/nanofabrication on perovskites. The study successfully fabricates multiple structured and emission-tunable perovskite patterns composed of A2(FA)n-1PbnX3n+1 (A represents a series of long-chain amine cations, and X = Cl, Br, I), encompassing 2D, quasi-2D, and 3D structures. The study delves into the intricate interplay between fabrication technology and the growth of multi-dimensional perovskites: higher repetition rates, coupled with appropriate laser power, prove more conducive to perovskite growth. By employing precise halogen element design, the simultaneous generation of two distinct color quick-response (QR) code patterns is achieved through one-step laser processing. These mirrored QR codes offer a novel approach to anti-counterfeiting. To further enhance anti-counterfeiting capabilities, artificial intelligence (AI)-based methods are introduced for recognizing patterned perovskite anti-counterfeiting labels. The combination of deep learning algorithms and a non-deterministic manufacturing process provides a convenient means of identification and creates unclonable features. This integration of materials science, laser fabrication, and AI offers innovative solutions for the future of security features.
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Affiliation(s)
- Xiangyu Xu
- School of Physics and Optoelectronic EngineeringAnhui UniversityHefeiAnhui230601P. R. China
- Information Materials and Intelligent Sensing Laboratory of Anhui ProvinceAnhui UniversityHefeiAnhui230601P. R. China
- Key Laboratory of Opto‐Electronic Information Acquisition and Manipulation of Ministry of EducationAnhui UniversityHefeiAnhui230601P. R. China
| | - Shoufang Liu
- School of Physics and Optoelectronic EngineeringAnhui UniversityHefeiAnhui230601P. R. China
- Information Materials and Intelligent Sensing Laboratory of Anhui ProvinceAnhui UniversityHefeiAnhui230601P. R. China
- Key Laboratory of Opto‐Electronic Information Acquisition and Manipulation of Ministry of EducationAnhui UniversityHefeiAnhui230601P. R. China
| | - Yan Kuai
- Information Materials and Intelligent Sensing Laboratory of Anhui ProvinceAnhui UniversityHefeiAnhui230601P. R. China
- Key Laboratory of Opto‐Electronic Information Acquisition and Manipulation of Ministry of EducationAnhui UniversityHefeiAnhui230601P. R. China
| | - Yuxuan Jiang
- School of Physics and Optoelectronic EngineeringAnhui UniversityHefeiAnhui230601P. R. China
| | - Zhijia Hu
- School of Physics and Optoelectronic EngineeringAnhui UniversityHefeiAnhui230601P. R. China
- Information Materials and Intelligent Sensing Laboratory of Anhui ProvinceAnhui UniversityHefeiAnhui230601P. R. China
- Key Laboratory of Opto‐Electronic Information Acquisition and Manipulation of Ministry of EducationAnhui UniversityHefeiAnhui230601P. R. China
| | - Benli Yu
- School of Physics and Optoelectronic EngineeringAnhui UniversityHefeiAnhui230601P. R. China
- Information Materials and Intelligent Sensing Laboratory of Anhui ProvinceAnhui UniversityHefeiAnhui230601P. R. China
- Key Laboratory of Opto‐Electronic Information Acquisition and Manipulation of Ministry of EducationAnhui UniversityHefeiAnhui230601P. R. China
| | - Siqi Li
- School of Physics and Optoelectronic EngineeringAnhui UniversityHefeiAnhui230601P. R. China
- Information Materials and Intelligent Sensing Laboratory of Anhui ProvinceAnhui UniversityHefeiAnhui230601P. R. China
- Key Laboratory of Opto‐Electronic Information Acquisition and Manipulation of Ministry of EducationAnhui UniversityHefeiAnhui230601P. R. China
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Ong WYE, Tan YZD, Lim LJ, Hoang TG, Tan ZK. Crosslinkable Ligands for High-Density Photo-Patterning of Perovskite Nanocrystals. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2409564. [PMID: 39374000 DOI: 10.1002/adma.202409564] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/04/2024] [Revised: 09/23/2024] [Indexed: 10/08/2024]
Abstract
Perovskite nanocrystals (PNCs) are promising luminescent materials for electronic color displays due to their high luminescence efficiency, widely-tunable emission wavelengths, and narrow emission linewidth. Their application in emerging display technologies necessitates precise micron-scale patterning while maintaining good optical performance. Although photolithography is a well-established micro-patterning technique in the industry, conventional processes are incompatible with PNCs as the use of polar solvents can damage the ionic PNCs, causing severe luminescence quenching. Here, we report the rational design and synthesis of a new bidentate photo-crosslinkable ligand for the direct photo-patterning of PNCs. Each ligand contains two photosensitive acrylate groups and two carboxylate groups, and is introduced to the PNCs via an entropy-driven ligand exchange process. In a close-packed thin film, the acrylate ligands photo-polymerize and crosslink under ultraviolet light, rendering the PNCs insoluble in developing solvents. A high-density crosslinked PNC film with an optical density of 1.1 is attained at 1.4 µm thickness, surpassing industry requirements on the absorption coefficient. Micron-scale patterning is further demonstrated using direct laser writing, producing well-defined 20 µm features. This study thus offers an effective and versatile approach for micro-patterning PNCs, and may also be broadly applicable to other nanomaterial systems.
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Affiliation(s)
- Woan Yuann Evon Ong
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
| | - Yong Zheng Daniel Tan
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
| | - Li Jun Lim
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
| | - Truong Giang Hoang
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
| | - Zhi-Kuang Tan
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
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Lee GH, Kim K, Kim Y, Yang J, Choi MK. Recent Advances in Patterning Strategies for Full-Color Perovskite Light-Emitting Diodes. NANO-MICRO LETTERS 2023; 16:45. [PMID: 38060071 PMCID: PMC10704014 DOI: 10.1007/s40820-023-01254-8] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Accepted: 10/19/2023] [Indexed: 12/08/2023]
Abstract
Metal halide perovskites have emerged as promising light-emitting materials for next-generation displays owing to their remarkable material characteristics including broad color tunability, pure color emission with remarkably narrow bandwidths, high quantum yield, and solution processability. Despite recent advances have pushed the luminance efficiency of monochromic perovskite light-emitting diodes (PeLEDs) to their theoretical limits, their current fabrication using the spin-coating process poses limitations for fabrication of full-color displays. To integrate PeLEDs into full-color display panels, it is crucial to pattern red-green-blue (RGB) perovskite pixels, while mitigating issues such as cross-contamination and reductions in luminous efficiency. Herein, we present state-of-the-art patterning technologies for the development of full-color PeLEDs. First, we highlight recent advances in the development of efficient PeLEDs. Second, we discuss various patterning techniques of MPHs (i.e., photolithography, inkjet printing, electron beam lithography and laser-assisted lithography, electrohydrodynamic jet printing, thermal evaporation, and transfer printing) for fabrication of RGB pixelated displays. These patterning techniques can be classified into two distinct approaches: in situ crystallization patterning using perovskite precursors and patterning of colloidal perovskite nanocrystals. This review highlights advancements and limitations in patterning techniques for PeLEDs, paving the way for integrating PeLEDs into full-color panels.
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Affiliation(s)
- Gwang Heon Lee
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Kiwook Kim
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Yunho Kim
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Jiwoong Yang
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea.
- Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea.
| | - Moon Kee Choi
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea.
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