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Wei Y, Tang Y, Li H, Zhang G, Chen H, Liu S, Zhang Z, Li H, An B, Liu X, Wang H. Decreased Hysteresis Benefited from Enhanced Lattice Oxygen and Promoted Band Alignment with Electron Transport Layer Modification in Perovskite Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2025; 17:11278-11286. [PMID: 39921624 DOI: 10.1021/acsami.4c19086] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/10/2025]
Abstract
SnO2 electron transport layer (ETL) morphology plays a vital role in carrier transportation and the properties of perovskite solar cells (PSCs). However, the uneven and pore surface would inevitably lead to high interface defects, high hysteresis, and poor performance. In this work, we use a molecular modifier 4-guanidinobenzoic acid methanesulfonate (GAMSA) to build a molecular bridge on the buried interface of SnO2/perovskite. XPS results demonstrate that the ratio of lattice oxygen (OL)/adsorbed oxygen (OV) increased from 1.35 to 2.34 after GAMSA modification, thus, Sn4+ and O vacancy defects in SnO2 were effectively reduced. Meanwhile, the conduction band minimum of the ETL enhanced from -4.33 eV to -4.07 eV, which obviously facilitated the electron transport. As a result, the optimal device exhibits an enhanced efficiency of 22.42%, which is much higher than that of the control one of 20.13%, with a greatly decreased hysteresis index from 14.35% to 3.27%. Notably, the optimized target device demonstrated excellent long-term stability, maintaining an initial efficiency of 87% after 2000 h storage in a N2 atmosphere in the dark at room temperature. This work paves a new method of ETL modification to improve lattice oxygen of SnO2 and restrain hysteresis for the enhanced performance of PSCs.
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Affiliation(s)
- Yuhao Wei
- School of New Energy and Materials, Southwest Petroleum University, Chengdu 610500, P. R. China
| | - Yanling Tang
- School of New Energy and Materials, Southwest Petroleum University, Chengdu 610500, P. R. China
| | - Haimin Li
- School of New Energy and Materials, Southwest Petroleum University, Chengdu 610500, P. R. China
| | - Guangzhao Zhang
- School of New Energy and Materials, Southwest Petroleum University, Chengdu 610500, P. R. China
| | - Hongyang Chen
- School of New Energy and Materials, Southwest Petroleum University, Chengdu 610500, P. R. China
| | - Shuqian Liu
- School of New Energy and Materials, Southwest Petroleum University, Chengdu 610500, P. R. China
| | - Zheng Zhang
- School of New Energy and Materials, Southwest Petroleum University, Chengdu 610500, P. R. China
| | - Haohui Li
- School of New Energy and Materials, Southwest Petroleum University, Chengdu 610500, P. R. China
| | - Bo An
- School of New Energy and Materials, Southwest Petroleum University, Chengdu 610500, P. R. China
| | - Xingchong Liu
- School of New Energy and Materials, Southwest Petroleum University, Chengdu 610500, P. R. China
| | - Hanyu Wang
- School of New Energy and Materials, Southwest Petroleum University, Chengdu 610500, P. R. China
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Yuan L, Zou S, Zhang K, Huang P, Dong Y, Wang J, Fan K, Lam MY, Wu X, Cheng W, Tang R, Chen W, Liu W, Wong KS, Yan K. Bottom Contact Engineering for Ambient Fabrication of >25% Durable Perovskite Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2409261. [PMID: 39092687 DOI: 10.1002/adma.202409261] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2024] [Indexed: 08/04/2024]
Abstract
The bottom contact in perovskite solar cells (PSCs) is easy to cause deep trap states and severe instability issues, especially under maximum power point tracking (MPPT). In this study, sodium gluconate (SG) is employed to disperse tin oxide (SnO2) nanoparticles (NPs) and regulate the interface contact at the buried interface. The SG-SnO2 electron transfer layer (ETL) enabled the deposition of pinhole-free perovskite films in ambient air and improved interface contact by bridging effect. SG-SnO2 PSCs achieved an impressive power conversion efficiency (PCE) of 25.34% (certified as 25.17%) with a high open-circuit voltage (VOC) exceeding 1.19 V. The VOC loss is less than 0.34 V relative to the 1.53 eV bandgap, and the fill factor (FF) loss is only 2.02% due to the improved contact. The SG-SnO2 PSCs retained around 90% of their initial PCEs after 1000 h operation (T90 = 1000 h), higher than T80 = 1000 h for the control SnO2 PSC. Microstructure analysis revealed that light-induced degradation primarily occurred at the buried holes and grain boundaries and highlighted the importance of bottom-contact engineering.
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Affiliation(s)
- Ligang Yuan
- Key Laboratory for Optoelectronic Information Perception and Instrumentation of Jiangxi Province, Key Laboratory of Nondestructive Testing Ministry of Education, School of the Testing and Photoelectric Engineering, Nanchang Hangkong University, Nanchang, 330063, China
- School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou, 510000, China
| | - Shibing Zou
- School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou, 510000, China
| | - Kaicheng Zhang
- Institute of Materials for Electronics and Energy Technology (i-MEET), Friedrich-Alexander-University Erlangen-Nüremberg, Martensstraße 7, 91058, Erlangen, Germany
| | - Peng Huang
- Research Institute of Frontier Science, Southwest Jiaotong University, Chengdu, 610031, China
| | - Yuyan Dong
- School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou, 510000, China
| | - Jiarong Wang
- School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou, 510000, China
| | - Kezhou Fan
- Department of Physics and William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clearwater Bay, Hong Kong, 999077, P. R. China
| | - Man Yu Lam
- Department of Physics and William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clearwater Bay, Hong Kong, 999077, P. R. China
| | - Xiao Wu
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong, 999077, P. R. China
| | - Wei Cheng
- Research Institute of Frontier Science, Southwest Jiaotong University, Chengdu, 610031, China
| | - Ruijia Tang
- College of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing, 100029, China
| | - Wenhao Chen
- Key Laboratory for Optoelectronic Information Perception and Instrumentation of Jiangxi Province, Key Laboratory of Nondestructive Testing Ministry of Education, School of the Testing and Photoelectric Engineering, Nanchang Hangkong University, Nanchang, 330063, China
| | - Weiqing Liu
- Key Laboratory for Optoelectronic Information Perception and Instrumentation of Jiangxi Province, Key Laboratory of Nondestructive Testing Ministry of Education, School of the Testing and Photoelectric Engineering, Nanchang Hangkong University, Nanchang, 330063, China
| | - Kam Sing Wong
- Department of Physics and William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clearwater Bay, Hong Kong, 999077, P. R. China
| | - Keyou Yan
- School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Solid Wastes Pollution Control and Recycling, South China University of Technology, Guangzhou, 510000, China
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Meng X, Sun Q, Shen B, Hu D, Kang B, Silva SRP, Wang L. Choline Derivative as a Multifunctional Interfacial Bridge through Synergistic Effects for Improving the Efficiency and Stability of Perovskite Solar Cells. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2310275. [PMID: 38221708 DOI: 10.1002/smll.202310275] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2023] [Revised: 01/04/2024] [Indexed: 01/16/2024]
Abstract
The interfacial carrier non-radiative recombination caused by buried defects in electron transport layer (ETL) material and the energy barrier severely hinders further improvement in efficiency and stability of perovskite solar cells (PSCs). In this study, the effect of the SnO2 ETL doped with choline chloride (CC), acetylcholine chloride (AC), and phosphocholine chloride sodium salt (PCSS) are investigated. These dopants modify the interface between SnO2 ETL and perovskite layer, acting as a bridge through synergistic effects to form uniform ETL films, enhance the interface contact, and passivate defects. Ultimately, compared with CC (which with ─OH) and AC (which with C═O), the PCSS with P═O and sodium ions groups is more beneficial for improving performance. The device based on PCSS-doped SnO2 ETL achieves an efficiency of 23.06% with a high VOC of 1.2 V, which is considerably higher than the control device (20.55%). Moreover, after aging for 500 h at a temperature of 25 °C and relative humidity (RH) of 30-40%, the unsealed device based on SnO2-PCSS ETL maintains 94% of its initial efficiency, while the control device only 80%. This study provides a meaningful reference for the design and selection of ideal pre-buried additive molecules.
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Affiliation(s)
- Xiangxin Meng
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Qing Sun
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Bo Shen
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Die Hu
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Bonan Kang
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - S Ravi P Silva
- Nanoelectronics Centre, Advanced Technology Institute, University of Surrey, Guildford, Surrey, GU2 7XH, UK
| | - Lijun Wang
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
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