From Brittle to Ductile: A Scalable and Tailorable All-Inorganic Semiconductor Foil through a Rolling Process toward Flexible Thermoelectric Modules

Sandwich Engineering Advances Ductile Thermoelectrics

Flexible thermoelectrics offer the possibility of utilizing human body heat to generate electricity, enabling self-powered wearable electronics. Ductile and plastic semiconductors are promising materials for flexible thermoelectrics due to their inherent ductility and tunable electrical properties. However, balancing ductility with high thermoelectric performance remains challenging, especially for n-type materials. Here, a novel n-type ductile Ag2(S, Se)-Ag2Se sandwich-like thermoelectric film is designed with different functional layers, where the Ag2(S, Se) core layer provides ductile deformation ability and low thermal conductivity, while epitaxially grown highly oriented Ag2Se shell layers ensure superior electrical transport performance. This architecture achieves a record high figure-of-merit near room-temperature range, 0.91 at 323 K, among n-type ductile semiconductors while preserving excellent flexibility. Additionally, a flexible in-plane device fabricated from this material delivers an exceptional power density of 26.5 W m-2 at a temperature difference of 50 K, demonstrating its great application potential for wearable electronics. Importantly, such novel sandwich engineering can pave the way to alleviate the compromise between thermoelectric performance and ductility in inorganic semiconductors.

Warm metalworking for plastic manufacturing in brittle semiconductors

Semiconductors are the core of modern electronics1. Because of their brittleness, semiconductors are usually processed by the complicated techniques of sputtering or deposition2-4, instead of the effective and versatile metalworking methods like rolling, extrusion and pressing used with metals5. Here we show that brittle semiconductors can be plastically manufactured with an extensibility as large as ~3,000% using warm metalworking, that is, plastic manufacturing at slightly elevated temperatures (empirically below 500 K). Many bulk brittle semiconductors, such as Cu2Se, Ag2Se and Bi90Sb10, can be processed like metals below 400-500 K into free-standing, large and high-quality films with a thickness from the macro-scale to the micrometre scale. A model based on temperature-dependent collective atomic displacement and thermal vibration is proposed to explain the superior plasticity. The warm-metalworked films can retain the excellent and tunable physical properties of the bulk versions, such as a high carrier mobility up to ~5,000 cm2 V-1 s-1 and tunable electrical conductivities over six orders of magnitude by adjusting the chemical composition. A case study in film thermoelectric devices demonstrates ultra-high normalized output power densities of 43-54 μW cm-2 K-2. This work suggests that brittle semiconductors can be manufactured by warm metalworking for applications in various electronics.

Solvothermally optimizing Ag2Te/Ag2S composites with high thermoelectric performance and plasticity

Silver-based fast ionic conductors show promising potential in thermoelectric applications. Among these, Ag2S offers unique high plasticity but low electrical conductivity, whereas Ag2Te exhibits high intrinsic electrical conductivity yet faces limitations due to high thermal conductivity and poor plasticity. Developing a composite thermoelectric material that combines the benefits of both is therefore essential. Here, this study reports the successful synthesis of Ag2Te/Ag2S composites via a facile and low-cost solvothermal method. By finely adjusting the composition of Ag2S and Ag2Te to obtain the optimized carrier concentration and the enhanced mobility, the figure of merit ZT of Ag2Te/Ag2S composites reached ∼0.42 at 373 K and ∼0.38 at 298 K, both surpassing those of pure Ag2S and Ag2Te. This increase in ZT also benefits from lattice defects created by the solvothermally synthesized biphasic composition, effectively scattering phonons of various wavelengths and reducing thermal conductivity compared to pure Ag2Te. Additionally, the plasticity of the Ag2Te/Ag2S composites improved considerably over pure Ag2Te, achieving a bending strain of ∼2.5% (versus ∼1.2% for intrinsic Ag2Te). This study can fill a critical gap in the research on composite silver-based fast ionic conductors synthesized via wet chemical methods and provide valuable guidance for future exploration.

Strategic vacancy engineering advances record-high ductile AgCu(Te, Se, S) thermoelectrics

AgCu(Te, Se, S) alloys, as one of the rare p-type plastic inorganic thermoelectrics, are receiving striking attention for their application foreground in high-performing flexible thermoelectric generators. However, strategies to enhance their thermoelectric performance while maintaining exceptional plasticity remain largely unexplored. Here, we introduce a strategic vacancy-engineering approach to address this challenge. Using computational design as a guide, we carefully tune the cation vacancy concentration to optimize hole carrier concentration, achieving impressive ZTs of ~0.62 at 300 K and ~0.83 at 343 K in (AgCu)0.998Te0.8Se0.1S0.1, ranking among the highest in this class of material. Importantly, numerous diffuse Ag-S bonds combined with amorphous phase introdeuced by vacancy engineering ensure that (AgCu)0.998Te0.8Se0.1S0.1 retains high plasticity while having high performance. A novel flexible thermoelectric device, comprising ductile p-type (AgCu)0.998Te0.8Se0.1S0.1 and n-type commercial Bi2Te3, achieves an impressive power density of ~126 μW cm-2 under 25 K temperature difference, demonstrating significant application prospects for wearable electronics.

Substrate-Free Inorganic-Based Films for Thermoelectric Applications

The development of highly integrated electronic components and the Internet of Things demands efficient thermal management and uninterrupted energy harvesting, which provides exciting opportunities for thermoelectric (TE) technology since it allows direct conversion between electricity and thermal energy. The improved output performance of TE devices has traditionally been driven by advancements in inorganic materials. Recently, there has been growing interest in studying substrate-free inorganic-based TE thin films because they provide improved adherence to curved surfaces and offer a more compact size compared to the corresponding rigid form of these materials. This review begins by summarizing various methods for fabricating freestanding inorganic-based TE films, including leveraging the intrinsic plasticity of certain materials, exfoliating layered-structure materials, using sacrificial substrates, and creating composites with flexible components such as polymers and carbon-based materials. A key challenge in achieving high device performance is determining how to maintain the favorable TE properties of inorganic materials. This can be addressed through strategies such as high inorganic content loading, multicomponent engineering, and interfacial structure design. The review also discusses the applications of substrate-free inorganic-based TE devices in both power generation and solid-state cooling. Finally, it outlines current challenges and proposes potential research directions to further advance the field.

Helical dislocation-driven plasticity and flexible high-performance thermoelectric generator in α-Mg3Bi2 single crystals

Inorganic plastic semiconductors play a crucial role in the realm of flexible electronics. In this study, we present a cost-effective plastic thermoelectric semimetal magnesium bismuthide (α-Mg3Bi2), exhibiting remarkable thermoelectric performance. Bulk single-crystalline α-Mg3Bi2 exhibits considerable plastic deformation at room temperature, allowing for the fabrication of intricate shapes such as the letters "SUSTECH" and a flexible chain. Transmission electron microscopy, time-of-flight neutron diffraction, and chemical bonding theoretic analyses elucidate that the plasticity of α-Mg3Bi2 stems from the helical dislocation-driven interlayer slip, small-sized Mg atoms induced weak interlayer Mg-Bi bonds, and low modulus of intralayer Mg2Bi22- networks. Moreover, we achieve a power factor value of up to 26.2 µW cm-1 K-2 along the c-axis at room temperature in an n-type α-Mg3Bi2 crystal. Our out-of-plane flexible thermoelectric generator exhibit a normalized power density of 8.1 μW cm-2 K-2 with a temperature difference of 7.3 K. This high-performance plastic thermoelectric semimetal promises to advance the field of flexible and deformable electronics.

Enhanced Cryogenic Thermoelectric Performance of Textured Bi1-xSbx Ribbons with Electronic Phase Transition

Bi1-xSbx alloys are promising cryogenic thermoelectric materials for generator and refrigeration devices at temperatures below 200 K. Herein, we prepared highly (00l) textured Bi1-xSbx (x = 0-0.05) ribbons by a melt-spinning technique and tuned its band structure with a Dirac electronic phase transition via Sb doping for improving the thermoelectric performance. The results indicate that the lamellar grains with (00l) orientation facilitate the alignment of the Fermi pocket of ribbon samples and cause a higher Seebeck coefficient compared with the nonoriented Bi1-xSbx bulk. Meanwhile, the Fermi level of Bi1-xSbx ribbons moves down by Sb doping, inducing the decrease of the carrier concentration and the increment of the Seebeck coefficient. Particularly, the Dirac electron phase is modulated when x reaches 0.04, which enlarges the carrier mobility and results in a well-maintained conductivity. Therefore, the optimized transport properties yield a large power factor of 61.1 μW·cm-1·K-2 at 140 K for the x = 0.04 sample, a significant 65% increase compared to the x = 0 ribbon. Besides, a planar thermoelectric device composed of 8 legs was assembled with the optimized ribbon, which produces a high open-circuit voltage of 39.8 mV. The output power maximum and the corresponding power density reach up to 402 nW and 125.7 μW·cm-2 under a temperature gradient of 80 K, respectively. Our work suggests that modulating the Dirac phase transition can effectively enhance the thermoelectric performance of Bi1-xSbx alloys.

Nanobinders advance screen-printed flexible thermoelectrics

Limited flexibility, complex manufacturing processes, high costs, and insufficient performance are major factors restricting the scalability and commercialization of flexible inorganic thermoelectrics for wearable electronics and other high-end cooling applications. We developed an innovative, cost-effective technology that integrates solvothermal, screen-printing, and sintering techniques to produce an inorganic flexible thermoelectric film. Our printable film, comprising Bi2Te3-based nanoplates as highly orientated grains and Te nanorods as "nanobinders," shows excellent thermoelectric performance for printable films, good flexibility, large-scale manufacturability, and low cost. We constructed a flexible thermoelectric device assembled by printable n-type Bi2Te3-based and p-type Bi0.4Sb1.6Te3 films, which achieved a normalized power density of >3 μW cm-2 K-2, ranking among the highest in screen-printed devices. Moreover, this technology can be extended to other inorganic thermoelectric film systems, such as Ag2Se, showing broad applicability.

Robust bendable thermoelectric generators enabled by elasticity strengthening

Using body heat for instance, thermoelectric generators have promising applications for driving wearable electronics continuously but remain a challenge in terms of recoverable flexibility, as known highly-performing thermoelectrics are usually inorganics showing rigidity. It is conceptualized in this work a large elastic strain ensuring both a largely-curved recoverable bending and a full recoverability in thermoelectric performance after enormous bendings. This leads the current work to focus on a microstructure engineering approach for strengthening the elasticity of Ag2Se, in which dense dislocations and refined grain induced by a multi-pass hot-rolling technique enable a significant enhancement in elasticity. The resultant hot-rolled elastic thin thermoelectric generators realize a record bendability, for at least 1,000,000 times at a tiny bending radius of 3 mm with an extraordinary power density. Such a bendability is applicable to the most curved surfaces of a human body, suggesting a promising strategy for powerful wearable thermoelectrics of all inorganics.

Sn-Doping-Induced Biphasic Structure Advances Ductile Ag2S-Based Thermoelectrics

Due to its inherent ductility, Ag2S shows promise as a flexible thermoelectric material for harnessing waste heat from diverse sources. However, its thermoelectric performance remains subpar, and existing enhancement strategies often compromise its ductility. In this study, a novel Sn-doping-induced biphasic structuring approach is introduced to synergistically control electron and phonon transport. Specifically, Sn-doping is incorporated into Ag2S0.7Se0.3 to form a biphasic composition comprising (Ag, Sn)2S0.7Se0.3 as the primary phase and Ag2S0.7Se0.3 as the secondary phase. This biphasic configuration achieves a competitive figure-of-merit ZT of 0.42 at 343 K while retaining exceptional ductility, exceeding 90%. The dominant (Ag, Sn)2S0.7Se0.3 phase bolsters the initially low carrier concentration, with interfacial boundaries between the phases effectively mitigating carrier scattering and promoting carrier mobility. Consequently, the optimized power factor reaches 5 µW cm-1 K-2 at 343 K. Additionally, the formation of the biphasic structure induces diverse micro/nano defects, suppressing lattice thermal conductivity to a commendable 0.18 W m-1 K-1, thereby achieving optimized thermoelectric performance. As a result, a four-leg in-plane flexible thermoelectric device is fabricated, exhibiting a maximum power density of ≈49 µW cm-2 under the temperature difference of 30 K, much higher than that of organic-based flexible thermoelectric devices.

Advancing flexible thermoelectrics for integrated electronics

With the increasing demand for energy and the climate challenges caused by the consumption of traditional fuels, there is an urgent need to accelerate the adoption of green and sustainable energy conversion and storage technologies. The integration of flexible thermoelectrics with other various energy conversion technologies plays a crucial role, enabling the conversion of multiple forms of energy such as temperature differentials, solar energy, mechanical force, and humidity into electricity. The development of these technologies lays the foundation for sustainable power solutions and promotes research progress in energy conversion. Given the complexity and rapid development of this field, this review provides a detailed overview of the progress of multifunctional integrated energy conversion and storage technologies based on thermoelectric conversion. The focus is on improving material performance, optimizing the design of integrated device structures, and achieving device flexibility to expand their application scenarios, particularly the integration and multi-functionalization of wearable energy conversion technologies. Additionally, we discuss the current development bottlenecks and future directions to facilitate the continuous advancement of this field.

Ductile P-Type AgCu(Se,S,Te) Thermoelectric Materials

Ductile inorganic thermoelectric (TE) materials open a new approach to develop high-performance flexible TE devices. N-type Ag2(S,Se,Te) and p-type AgCu(Se,S,Te) pseudoternary solid solutions are two typical categories of ductile inorganic TE materials reported so far. Comparing with the Ag2(S,Se,Te) pseudoternary solid solutions, the phase composition, crystal structure, and physical properties of AgCu(Se,S,Te) pseudoternary solid solutions are more complex, but their relationships are still ambiguous now. In this work, via systematically investigating the phase composition, crystal structure, mechanical, and TE properties of about 60 AgCu(Se,S,Te) pseudoternary solid solutions, the comprehensive composition-structure-property phase diagrams of the AgCuSe-AgCuS-AgCuTe pseudoternary system is constructed. By mapping the complex phases, the "ductile-brittle" and "n-p" transition boundaries are determined and the composition ranges with high TE performance and inherent ductility are illustrated. On this basis, high performance p-type ductile TE materials are obtained, with a maximum zT of 0.81 at 340 K. Finally, flexible in-plane TE devices are prepared by using the AgCu(Se,S,Te)-based ductile TE materials, showing high output performance that is superior to those of organic and inorganic-organic hybrid flexible devices.

Modulation of the morphotropic phase boundary for high-performance ductile thermoelectric materials

The flexible thermoelectric technique, which can convert heat from the human body to electricity via the Seebeck effect, is expected to provide a peerless solution for the power supply of wearables. The recent discovery of ductile semiconductors has opened a new avenue for flexible thermoelectric technology, but their power factor and figure-of-merit values are still much lower than those of classic thermoelectric materials. Herein, we demonstrate the presence of morphotropic phase boundary in Ag2Se-Ag2S pseudobinary compounds. The morphotropic phase boundary can be freely tuned by adjusting the material thermal treatment processes. High-performance ductile thermoelectric materials with excellent power factor (22 μWcm-1 K-2) and figure-of-merit (0.61) values are realized near the morphotropic phase boundary at 300 K. These materials perform better than all existing ductile inorganic semiconductors and organic materials. Furthermore, the in-plane flexible thermoelectric device based on these high-performance thermoelectric materials demonstrates a normalized maximum power density reaching 0.26 Wm-1 under a temperature gradient of 20 K, which is at least two orders of magnitude higher than those of flexible organic thermoelectric devices. This work can greatly accelerate the development of flexible thermoelectric technology.

Flexible Ag-S-Te System with Promising Room-Temperature Thermoelectric Performance

Silver chalcogenides demonstrate great potential as flexible thermoelectric materials due to their excellent ductility and tunable electrical and thermal transport properties. In this work, we report that the amorphous/crystalline phase ratio and thermoelectric properties of the Ag₂S_xTe_1-x (x = 0.55-0.75) samples can be modified by altering the S content. The room-temperature power factor of the Ag₂S_0.55Te_0.45 sample is 4.9 μW cm^-1 K^-2, and a higher power factor can be achieved by decreasing the carrier concentration as predicted by the single parabolic band model. The addition of a small amount of excessive Te into Ag₂S_0.55Te_0.45 (Ag₂S_0.55Te_0.45+y) not only enhances the power factor by decreasing the carrier concentration but also reduces the total thermal conductivity due to decreased electronic thermal conductivity. Owing to the effectively optimized carrier concentration, the thermoelectric power factor and dimensionless figure of merit zT of the sample with y = 0.007 reaches, respectively, 6.2 μW cm^-1 K^-2 and 0.39, while the excellent plastic deformability is well maintained, demonstrating its promising potential as a flexible thermoelectric material at room temperature.

Robust, Flexible Thermoelectric Film for Energy Harvesting by a Simple and Eco-Friendly Method

As for the self-supporting composite films, it is significant to develop a structural design that allows for excellent flexibility while reducing the negative effect on thermoelectric (TE) properties. Herein, a robust, flexible TE film was fabricated by in situ chemical transformation and vacuum-assisted filtration without any organic solvents involved. The performance of the films was further optimized by adjusting the Ag/Te ratio and post-treatment methods. Owing to the semi-interpenetrating nanonetwork structure formed by Ag_xTe nanowires and bacterial cellulose, the obtained TE film displayed a high tensile strength of ∼78.4 MPa and a high power factor of 48.9 μW m^-1 K^-2 at room temperature. A slight electrical conductivity decrement of the TE film in flexible test (∼2% after 1000 bending cycles) indicates an excellent flexibility. Finally, a TE bracelet was assembled to harvest body heat energy, and a steady current of ∼2.7 μA was generated when worn on the wrist indoors. This work provides a reference for the structural design and practical application of flexible TE films.