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Qi J, Huang X, Xiao X, Zhang X, Zhou P, Zhang S, Li R, Kou H, Jiang F, Yao Y, Song J, Feng X, Shi Y, Luo W, Chen L. Isotope engineering achieved by local coordination design in Ti-Pd co-doped ZrCo-based alloys. Nat Commun 2024; 15:2883. [PMID: 38570487 PMCID: PMC10991433 DOI: 10.1038/s41467-024-47250-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/08/2023] [Accepted: 03/19/2024] [Indexed: 04/05/2024] Open
Abstract
Deuterium/Tritium (D/T) handling in defined proportions are pivotal to maintain steady-state operation for fusion reactors. However, the hydrogen isotope effect in metal-hydrogen systems always disturbs precise D/T ratio control. Here, we reveal the dominance of kinetic isotope effect during desorption. To reconcile the thermodynamic stability and isotope effect, we demonstrate a quantitative indicator of Tgap and further a local coordination design strategy that comprises thermodynamic destabilization with vibration enhancement of interstitial isotopes for isotope engineering. Based on theoretical screening analysis, an optimized Ti-Pd co-doped Zr0.8Ti0.2Co0.8Pd0.2 alloy is designed and prepared. Compared to ZrCo alloy, the optimal alloy enables consistent isotope delivery together with a three-fold lower Tgap, a five-fold lower energy barrier difference, a one-third lower isotopic composition deviation during desorption and an over two-fold higher cycling capacity. This work provides insights into the interaction between alloy and hydrogen isotopes, thus opening up feasible approaches to support high-performance fusion reactors.
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Affiliation(s)
- Jiacheng Qi
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310058, Zhejiang, China
| | - Xu Huang
- Institute of Materials, China Academy of Engineering Physics, Mianyang, 621907, Sichuan, China
| | - Xuezhang Xiao
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310058, Zhejiang, China.
- Key Laboratory of Hydrogen Storage and Transportation Technology of Zhejiang Province, Hangzhou, 310027, Zhejiang, China.
| | - Xinyi Zhang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310058, Zhejiang, China
| | - Panpan Zhou
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310058, Zhejiang, China
| | - Shuoqing Zhang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310058, Zhejiang, China
| | - Ruhong Li
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, 311215, China
| | - Huaqin Kou
- Institute of Materials, China Academy of Engineering Physics, Mianyang, 621907, Sichuan, China.
| | - Fei Jiang
- Institute of Materials, China Academy of Engineering Physics, Mianyang, 621907, Sichuan, China
| | - Yong Yao
- Institute of Materials, China Academy of Engineering Physics, Mianyang, 621907, Sichuan, China
| | - Jiangfeng Song
- Institute of Materials, China Academy of Engineering Physics, Mianyang, 621907, Sichuan, China
| | - Xingwen Feng
- Institute of Materials, China Academy of Engineering Physics, Mianyang, 621907, Sichuan, China
| | - Yan Shi
- Institute of Materials, China Academy of Engineering Physics, Mianyang, 621907, Sichuan, China
| | - Wenhua Luo
- Institute of Materials, China Academy of Engineering Physics, Mianyang, 621907, Sichuan, China
| | - Lixin Chen
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310058, Zhejiang, China.
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Qian Y, Qian R, Feng H, Zhu D, Wu C. Hydrogen Absorption Performance and O 2 Poisoning Resistance of Pd/ZrCo Composite Film. MATERIALS (BASEL, SWITZERLAND) 2023; 16:3159. [PMID: 37109996 PMCID: PMC10145738 DOI: 10.3390/ma16083159] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/27/2023] [Revised: 04/11/2023] [Accepted: 04/14/2023] [Indexed: 06/19/2023]
Abstract
In order to enhance the hydrogen absorption performance and poisoning resistance of ZrCo to O2, Pd/ZrCo composite films were prepared by direct current magnetron sputtering. The results show that the initial hydrogen absorption rate of the Pd/ZrCo composite film increased significantly due to the catalytic effect of Pd compared with the ZrCo film. In addition, the hydrogen absorption properties of Pd/ZrCo and ZrCo were tested in poisoned hydrogen mixed with 1000 ppm O2 at 10-300 °C, where the Pd/ZrCo films maintained a better resistance to O2 poisoning below 100 °C. The mechanism of poisoning was investigated jointly by first-principles calculation combined with SEM-EDS elemental mapping tests. It is shown that the poisoned Pd layer maintained the ability to promote the decomposition of H2 into hydrogen atoms and their rapid transfer to ZrCo.
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