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Ma X, Wang Z, Qin Q, Chen J, Liu X, Zou F, Xu Z, Chen W, Li G, Li Y, Zhai T, Li L. Simultaneous AoLP and DoLP Detection in a Bias-Switchable PdSe 2/MoS 2/PdSe 2 Heterojunction for Polarization Discrimination. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025; 37:e2500572. [PMID: 40059528 DOI: 10.1002/adma.202500572] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/09/2025] [Revised: 02/19/2025] [Indexed: 04/24/2025]
Abstract
On-chip polarized photodetectors play a crucial role in advancing ultra-compact optoelectronic devices for next-generation technologies. However, simultaneously detecting the angle of linear polarization (AoLP) and the degree of linear polarization (DoLP) within a single device remains a challenging task, particularly due to the inherently weak polarization states found in naturally anisotropic materials. In this paper, it is reported on the development of a twisted monopole barrier photodetector based on a PdSe2/MoS2/PdSe2 configuration. This photodetector features a rapid response time of 7-12 µs. In an imaging demonstration, it operates as a single-polarization photodetector, reconstructing AoLP and DoLP distributions of target objects through bias-switchable polarization detection across a wide spectral range, all without the plasmonic/metasurface nanostructures or polarization filters. Additionally, it demonstrates bipolar characteristics under zero-bias conditions at room temperature, enabling dual-binary coding for polarimetric-encoded communication. These combination of features positions the photodetector as a highly promising candidate for on-chip applications.
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Affiliation(s)
- Xiaofei Ma
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Zeping Wang
- University of Science and Technology of China, Hefei, 230026, P. R. China
- Anhui Institute of Optics and Fine Mechanics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, China
| | - Qinggang Qin
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China
| | - Jiawang Chen
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Xue Liu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China
| | - Fengxia Zou
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Zhengyu Xu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China
| | - Wei Chen
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Guanghai Li
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Yuan Li
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology(HUST), Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology(HUST), Wuhan, 430074, P. R. China
- Optics Valley Laboratory, Hubei, 430074, China
| | - Liang Li
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- University of Science and Technology of China, Hefei, 230026, P. R. China
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Mondal S, Basak D. Excitonic Rydberg States in a Trilayer to Monolayer H 2-Aided CVD-Grown Large-Area MoS 2 Film with Excellent UV to Visible Broad Band Photodetection Applications. ACS APPLIED MATERIALS & INTERFACES 2024; 16:2940-2953. [PMID: 38176105 DOI: 10.1021/acsami.3c15655] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/06/2024]
Abstract
The diverse nature of optoelectronic properties of few-layer or monolayer MoS2 is generally dominated by A and B excitons. Occasionally, strong Coulombic interactions within the 2D monolayer led to the creation of hydrogen-like Rydberg states of excitons in MoS2 similar to other 2D monolayers. In this paper, a simple process is used to convert trilayer MoS2 films to a monolayer by introducing H2 gas during chemical vapor deposition. Remarkably, alongside the usual A, B excitons, and A- trion, the appearance of the Rydberg states is evidenced by photoluminescence spectra even at room temperature; also, there is an increase in their areal percentage with an increase in H2 content. The s-type excited Rydberg states up to the fourth order (n = 5) and third order (n = 4) of A and B excitons, respectively, have been probed from the photoluminescence spectra at 93 K. Unprecedentedly, the first-order derivative of room-temperature photocurrent spectrum reveals the Rydberg states concurrently and elaboratively. Furthermore, the large-area MoS2 films exhibit photoresponse in a broad UV to visible region with excellent photosensitivity (∼102) toward both UV and visible lights. Not only does this provide a profound understanding of the excitonic Rydberg states but also highlights the considerable potential of large-area monolayer MoS2 overcoming the difficulty of tiny flake-related 2D device endeavors.
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Affiliation(s)
- Sourav Mondal
- School of Physical Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India
| | - Durga Basak
- School of Physical Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India
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Xiao L, Guo G, Zhang M, You M, Luo S, Guo G, He C, Tang C, Zhong J. Cu- and Al-Decorated Monolayer TiSe 2 for Enhanced Gas Detection Sensitivity: A DFT Study. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2023; 39:18631-18643. [PMID: 38064293 DOI: 10.1021/acs.langmuir.3c03045] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/20/2023]
Abstract
The rapid industrial development has contributed to worsening global pollution, necessitating the urgent development of highly sensitive, cost-effective, and portable gas sensors. In this work, the adsorption of CO, CO2, H2S, NH3, NO, NO2, O2, and SO2 gas molecules on pristine and Cu- and Al-decorated monolayer TiSe2 has been investigated based on first-principles calculations. First, the results of the phonon spectrum and ab initio molecular dynamics simulations demonstrated that TiSe2 is dynamically stable. In addition, compared to pristine TiSe2 (-0.029 to -0.154 eV), the adsorption energy of gas molecules (excluding CO2) significantly decreased after decorated with Cu or Al (-0.212 to -0.977 eV in Cu-decorated TiSe2, -0.438 to -2.896 eV in Al-decorated TiSe2). Among them, NH3 and NO2 have the lowest adsorption energies in Cu and Al-decorated TiSe2, respectively. Further research has shown that the decrease in adsorption energy of gas molecules is mainly due to orbital hybridization and charge transfer between decorated Cu and Al atoms and gas molecules. These findings suggest that TiSe2 decorated with Cu and Al can effectively improve its sensitivity to NH3 and NO2, respectively, making it promising in gas sensing applications.
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Affiliation(s)
- Landong Xiao
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China
| | - Gencai Guo
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China
- Foshan Green Intelligent Manufacturing Research Institute of Xiangtan University, Guangdong 528311, China
| | - Mengyang Zhang
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China
| | - Manqi You
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China
| | - Siwei Luo
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China
| | - Gang Guo
- School of Science, Hunan Institute of Technology, Hengyang 421002, China
| | - Chaoyu He
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China
| | - Chao Tang
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China
| | - Jianxin Zhong
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China
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Wu B, Zheng H, Li S, Wang CT, Ding J, He J, Liu Z, Wang JT, Liu Y. Enhanced Homogeneity of Moiré Superlattices in Double-Bilayer WSe 2 Homostructure. ACS APPLIED MATERIALS & INTERFACES 2023; 15:48475-48484. [PMID: 37796741 DOI: 10.1021/acsami.3c06949] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/07/2023]
Abstract
Moiré superlattices have emerged as a promising platform for investigating and designing optically generated excitonic properties. The electronic band structure of these systems can be qualitatively modulated by interactions between the top and bottom layers, leading to the emergence of new quantum phenomena. However, the inhomogeneities present in atomically thin bilayer moiré superlattices created by artificial stacking have hindered a deeper understanding of strongly correlated electron properties. In this work, we report the fabrication of homogeneous moiré superlattices with controllable twist angles using a 2L-WSe2/2L-WSe2 homostructure. By adding extra layers, we provide additional degrees of freedom to tune the optical properties of the moiré superlattices while mitigating the nonuniformity problem. The presence of an additional bottom layer acts as a buffer, reducing the inhomogeneity of the moiré superlattice, while the encapsulation effect of the additional top and bottom WSe2 monolayers further enhances the localized moiré excitons. Our observations of alternating circularly polarized photoluminescence confirm the existence of moiré excitons, and their characteristics were further confirmed by theoretical calculations. These findings provide a fundamental basis for studying moiré potential correlated quantum phenomena and pave the way for their application in quantum optical devices.
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Affiliation(s)
- Biao Wu
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Haihong Zheng
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Shaofei Li
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Chang-Tian Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Junnan Ding
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Jun He
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Zongwen Liu
- School of Chemical and Biomolecular Engineering, The University of Sydney, Sydney, NSW 2006, Australia
- The University of Sydney Nano Institute, The University of Sydney, Sydney, NSW 2006 ,Australia
| | - Jian-Tao Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
| | - Yanping Liu
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- Shenzhen Research Institute of Central South University, Shenzhen 518000, People's Republic of China
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