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Nawaz MZ, Khaleeq A, Hasan WU, Ahmad W, Manj RZA, Saleem MS, Ullah I, Irfan A, ul Hasan IM, Yaqub M, Asghar HMNUHK, Naz G, Li M, Wang C, Illarionov YY. Flexible Self-Powered Ti 3C 2T x MXene Nanosheet/CdS Nanobelt Photodetector with Enhanced Responsivity and Photosensitivity. ACS APPLIED NANO MATERIALS 2025; 8:11015-11025. [DOI: 10.1021/acsanm.5c01373] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2025]
Affiliation(s)
- Muhammad Zubair Nawaz
- Laboratory of 2D Optoelectronics and Nanoelectronics (L2DON), Department of Materials Science and Engineering
- Southern University of Science and Technology
| | | | | | - Waqas Ahmad
- Laboratory of 2D Optoelectronics and Nanoelectronics (L2DON), Department of Materials Science and Engineering
- Southern University of Science and Technology
| | | | - Muhammad Shahrukh Saleem
- Laboratory of 2D Optoelectronics and Nanoelectronics (L2DON), Department of Materials Science and Engineering
- Southern University of Science and Technology
| | | | | | - Israr Masood ul Hasan
- Key Laboratory of Comprehensive and Highly Efficient Utilization of Salt Lake Resources, Qinghai Institutes of Salt Lakes
- Chinese Academy of Sciences
| | | | | | - Gul Naz
- Institute of Physics
- The Islamia University of Bahawalpur
| | - Mai Li
- College of Physics
- Donghua University
| | | | - Yury Yuryevich Illarionov
- Laboratory of 2D Optoelectronics and Nanoelectronics (L2DON), Department of Materials Science and Engineering
- Southern University of Science and Technology
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Yang D, Sheng H, Li G, Li H, Zhao Y, Li Z, Ma L, Wang Y, Zhang D. In-Situ High-Performance Photodetectors Based on CdSe Nanobelts Decorated with CuI Nanocrystals. ACS APPLIED MATERIALS & INTERFACES 2025; 17:29855-29863. [PMID: 40343757 DOI: 10.1021/acsami.5c01910] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2025]
Abstract
Photodetectors with high responsivity are crucial elements in various modern industrial applications. CdSe nanobelts, due to their direct bandgap, have emerged as a high-performance material with wide-ranging applications in photodetector technology. For CdSe nanobelt-based photodetectors, which already exhibit broad applicability, enhancing their performance is a key area of ongoing research and development. In this study, we report the successful synthesis of CdSe nanobelt photodetectors decorated with CuI nanocrystals through a combination of physical vapor deposition and a poly(vinyl alcohol) film transfer process. This approach significantly improves the performance of the photodetectors. In the 405-765 nm range with fixed light intensity, the responsivity and external quantum efficiency of the CuI@CdSe photodetectors peaked at 242.88 A/W and 579.18%, 11.6 times higher than those of the in-situ CdSe photodetectors. At 520 nm with 0.94 mW/cm2 intensity, these metrics reached 289.53 A/W and 860.727%, about 38.645 times higher than those of the in-situ CdSe photodetectors. To further demonstrate the enhanced performance, we prepared an image signal transmission system to validate the optical imaging capabilities of the photodetectors. The CuI@CdSe photodetectors successfully converted a preset image into the final output image with a resolution of 110 × 93 pixels, showcasing their potential for practical imaging applications. This work significantly boosts the responsivity and external quantum efficiency of CdSe photodetectors through the incorporation of CuI nanocrystals. It also paves the way toward creating advanced high-performance photodetectors of the future.
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Affiliation(s)
- Dachen Yang
- College of Physics and Electronic Engineering, Hengyang Normal University, Hengyang 421008, China
| | - Haoran Sheng
- College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Guo Li
- College of Physics and Electronic Engineering, Hengyang Normal University, Hengyang 421008, China
| | - Honglai Li
- College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Yipeng Zhao
- College of Physics and Electronic Engineering, Hengyang Normal University, Hengyang 421008, China
| | - Zhiqiang Li
- College of Physics and Electronic Engineering, Hengyang Normal University, Hengyang 421008, China
| | - Liang Ma
- College of Physics and Electronic Engineering, Hengyang Normal University, Hengyang 421008, China
| | - Yicheng Wang
- College of Physics and Electronic Engineering, Hengyang Normal University, Hengyang 421008, China
| | - Dengyu Zhang
- College of Physics and Electronic Engineering, Hengyang Normal University, Hengyang 421008, China
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Wu JY, Jiang HY, Wen ZY, Wang CR, Zhang T. Van der Waals Schottky Junction Photodetector with Ultrahigh Rectifying Ratio and Switchable Photocurrent Generation. ACS APPLIED MATERIALS & INTERFACES 2024; 16:32357-32366. [PMID: 38877995 DOI: 10.1021/acsami.4c04023] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/27/2024]
Abstract
Metal-semiconductor junctions play an important role in the development of electronic and optoelectronic devices. A Schottky junction photodetector based on two-dimensional (2D) materials is promising for self-powered photodetection with fast response speed and large signal-to-noise ratio. However, it usually suffers from an uncontrolled Schottky barrier due to the Fermi level pinning effect arising from the interface states. In this work, all-2D Schottky junctions with near-ideal Fermi level depinning are realized, attributed to the high-quality interface between 2D semimetals and semiconductors. We further demonstrate asymmetric diodes based on multilayer graphene/MoS2/PtSe2 with a current rectification ratio exceeding 105 and an ideality factor of 1.2. Scanning photocurrent mapping shows that the photocurrent generation mechanism in the heterostructure switches from photovoltaic effect to photogating effect at varying drain biases, indicating both energy conversion and optical sensing are realized in a single device. In the photovoltaic mode, the photodetector is self-powered with a response time smaller than 100 μs under the illumination of a 405 nm laser. In the photogating mode, the photodetector exhibits a high responsivity up to 460 A/W originating from a high photogain. Finally, the photodetector is employed for single-pixel imaging, demonstrating its high-contrast photodetection ability. This work provides insight into the development of high-performance self-powered photodetectors based on 2D Schottky junctions.
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Affiliation(s)
- Jing-Yuan Wu
- Department of Optoelectronic Science and Engineering, College of Science, Donghua University, Shanghai 201620, China
| | - Hai-Yang Jiang
- Department of Optoelectronic Science and Engineering, College of Science, Donghua University, Shanghai 201620, China
| | - Zhao-Yang Wen
- Department of Optoelectronic Science and Engineering, College of Science, Donghua University, Shanghai 201620, China
| | - Chun-Rui Wang
- Department of Optoelectronic Science and Engineering, College of Science, Donghua University, Shanghai 201620, China
| | - Tong Zhang
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
- Key Laboratory of Micro-Inertial Instrument and Advanced Navigation Technology, Ministry of Education, and School of Instrument Science and Engineering, Southeast University, Nanjing 210096, China
- Suzhou Key Laboratory of Metal Nano-Optoelectronic Technology, Southeast University Suzhou Campus, Suzhou 215123, China
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Sun T, Feng B, Huo J, Xiao Y, Wang W, Peng J, Li Z, Du C, Wang W, Zou G, Liu L. Artificial Intelligence Meets Flexible Sensors: Emerging Smart Flexible Sensing Systems Driven by Machine Learning and Artificial Synapses. NANO-MICRO LETTERS 2023; 16:14. [PMID: 37955844 PMCID: PMC10643743 DOI: 10.1007/s40820-023-01235-x] [Citation(s) in RCA: 35] [Impact Index Per Article: 17.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2023] [Accepted: 09/24/2023] [Indexed: 11/14/2023]
Abstract
The recent wave of the artificial intelligence (AI) revolution has aroused unprecedented interest in the intelligentialize of human society. As an essential component that bridges the physical world and digital signals, flexible sensors are evolving from a single sensing element to a smarter system, which is capable of highly efficient acquisition, analysis, and even perception of vast, multifaceted data. While challenging from a manual perspective, the development of intelligent flexible sensing has been remarkably facilitated owing to the rapid advances of brain-inspired AI innovations from both the algorithm (machine learning) and the framework (artificial synapses) level. This review presents the recent progress of the emerging AI-driven, intelligent flexible sensing systems. The basic concept of machine learning and artificial synapses are introduced. The new enabling features induced by the fusion of AI and flexible sensing are comprehensively reviewed, which significantly advances the applications such as flexible sensory systems, soft/humanoid robotics, and human activity monitoring. As two of the most profound innovations in the twenty-first century, the deep incorporation of flexible sensing and AI technology holds tremendous potential for creating a smarter world for human beings.
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Affiliation(s)
- Tianming Sun
- Department of Mechanical Engineering, State Key Laboratory of Tribology in Advanced Equipment, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing, 100084, People's Republic of China
- College of Materials Science and Engineering, Shanxi Province, Taiyuan University of Technology, Taiyuan, 030024, People's Republic of China
| | - Bin Feng
- Department of Mechanical Engineering, State Key Laboratory of Tribology in Advanced Equipment, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Jinpeng Huo
- Department of Mechanical Engineering, State Key Laboratory of Tribology in Advanced Equipment, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Yu Xiao
- Department of Mechanical Engineering, State Key Laboratory of Tribology in Advanced Equipment, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Wengan Wang
- Department of Mechanical Engineering, State Key Laboratory of Tribology in Advanced Equipment, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Jin Peng
- Department of Mechanical Engineering, State Key Laboratory of Tribology in Advanced Equipment, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Zehua Li
- Department of Mechanical Engineering, State Key Laboratory of Tribology in Advanced Equipment, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Chengjie Du
- Department of Mechanical Engineering, State Key Laboratory of Tribology in Advanced Equipment, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Wenxian Wang
- College of Materials Science and Engineering, Shanxi Province, Taiyuan University of Technology, Taiyuan, 030024, People's Republic of China.
| | - Guisheng Zou
- Department of Mechanical Engineering, State Key Laboratory of Tribology in Advanced Equipment, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing, 100084, People's Republic of China.
| | - Lei Liu
- Department of Mechanical Engineering, State Key Laboratory of Tribology in Advanced Equipment, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing, 100084, People's Republic of China.
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