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Abboudi H, EL Ghazi H, En-nadir R, Basyooni-M. Kabatas MA, Jorio A, Zorkani I. Efficiency of InN/InGaN/GaN Intermediate-Band Solar Cell under the Effects of Hydrostatic Pressure, In-Compositions, Built-in-Electric Field, Confinement, and Thickness. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:104. [PMID: 38202559 PMCID: PMC10780786 DOI: 10.3390/nano14010104] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2023] [Revised: 12/23/2023] [Accepted: 12/26/2023] [Indexed: 01/12/2024]
Abstract
This paper presents a thorough numerical investigation focused on optimizing the efficiency of quantum-well intermediate-band solar cells (QW-IBSCs) based on III-nitride materials. The optimization strategy encompasses manipulating confinement potential energy, controlling hydrostatic pressure, adjusting compositions, and varying thickness. The built-in electric fields in (In, Ga)N alloys and heavy-hole levels are considered to enhance the results' accuracy. The finite element method (FEM) and Python 3.8 are employed to numerically solve the Schrödinger equation within the effective mass theory framework. This study reveals that meticulous design can achieve a theoretical photovoltaic efficiency of quantum-well intermediate-band solar cells (QW-IBSCs) that surpasses the Shockley-Queisser limit. Moreover, reducing the thickness of the layers enhances the light-absorbing capacity and, therefore, contributes to efficiency improvement. Additionally, the shape of the confinement potential significantly influences the device's performance. This work is critical for society, as it represents a significant advancement in sustainable energy solutions, holding the promise of enhancing both the efficiency and accessibility of solar power generation. Consequently, this research stands at the forefront of innovation, offering a tangible and impactful contribution toward a greener and more sustainable energy future.
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Affiliation(s)
- Hassan Abboudi
- LPS, Faculty of Sciences, Mohamed Ben Abdellah University, Fes 30000, Morocco
| | - Haddou EL Ghazi
- LPS, Faculty of Sciences, Mohamed Ben Abdellah University, Fes 30000, Morocco
- 2SMPI Group, ENSAM Laboratory, Hassan II University, Nile 150, Casablanca 20670, Morocco
| | - Redouane En-nadir
- LPS, Faculty of Sciences, Mohamed Ben Abdellah University, Fes 30000, Morocco
| | - Mohamed A. Basyooni-M. Kabatas
- Dynamics of Micro and Nano Systems Group, Department of Precision and Microsystems Engineering, Delft University of Technology, Mekelweg 2, 2628 CD Delft, The Netherlands
- Solar Research Laboratory, Solar and Space Research Department, National Research Institute of Astronomy and Geophysics, Cairo 11421, Egypt
- Department of Nanotechnology and Advanced Materials, Graduate School of Applied and Natural Science, Selçuk University, 42030 Konya, Turkey
| | - Anouar Jorio
- LPS, Faculty of Sciences, Mohamed Ben Abdellah University, Fes 30000, Morocco
| | - Izeddine Zorkani
- LPS, Faculty of Sciences, Mohamed Ben Abdellah University, Fes 30000, Morocco
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En-nadir R, Kabatas MABM, Tihtih M, El Ghazi H. Linear and nonlinear optical absorption coefficients in InGaN/GaN quantum wells: Interplay between intense laser field and higher-order anharmonic potentials. Heliyon 2023; 9:e22867. [PMID: 38076119 PMCID: PMC10703614 DOI: 10.1016/j.heliyon.2023.e22867] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/15/2023] [Revised: 11/21/2023] [Accepted: 11/21/2023] [Indexed: 03/08/2024] Open
Abstract
This computational investigation delves into the electronic and optical attributes of InGaN/GaN nanostructures subjected to both harmonic and anharmonic confinement potentials, coupled with the influence of a nonresonant intense laser field (ILF). The theoretical framework incorporates higher-order anharmonic terms, specifically quartic and sextic terms. The solutions to the Schrödinger equation have been computed employing the finite element method and the effective mass theory. Moreover, linear and third-order nonlinear optical absorption coefficients are derived via a density matrix expansion. Our analysis reveals the feasibility of manipulating electronic and optical properties by adjusting confinement potential parameters, system attributes, and laser field intensity. In addition, the ILF induces remarkable modifications, characterized by reduced resonance peak amplitudes and a blue shift in absorption coefficients. Intriguingly, regardless of potential harmonicity, the impact of incident electromagnetic intensity is notably more pronounced in the absence of the ILF. These findings hold significant promise for advancing theoretical predictions, providing valuable insights into the intricate interplay between confinement potentials, laser fields, and their effects on electronic and optical behaviors within nanostructures.
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Affiliation(s)
| | - Mohamed A. Basyooni-M. Kabatas
- Dynamics of Micro and Nano Systems, Department of Precision and Microsystems Engineering, Delft University of Technology, Mekelweg 2, 2628, CD, Delft, Netherlands
- Department of Nanotechnology and Advanced Materials, Graduate School of Applied and Natural Science, Selçuk University, Konya, 42030, Turkey
- Space Research Laboratory, Solar and Space Research Department, National Research Institute of Astronomy and Geophysics, Cairo, Egypt
| | - Mohammed Tihtih
- Institute of Ceramic and Polymer Engineering, University of Miskolc, Miskolc, 3515, Hungary
| | - Haddou El Ghazi
- University of Sidi Mohamed Ben Abdullah, Fez, B.P. 2202, Morocco
- 2SMPI Group, ENSAM, University Hassan-II University, Casablanca, 20670, Morocco
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En-nadir R, Basyooni-M. Kabatas MA, Tihtih M, Belaid W, Ez-zejjari I, Majda EG, El Ghazi H, Sali A, Zorkani I. Enhancing Emission via Radiative Lifetime Manipulation in Ultrathin InGaN/GaN Quantum Wells: The Effects of Simultaneous Electric and Magnetic Fields, Thickness, and Impurity. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2817. [PMID: 37947663 PMCID: PMC10648222 DOI: 10.3390/nano13212817] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/06/2023] [Revised: 10/20/2023] [Accepted: 10/23/2023] [Indexed: 11/12/2023]
Abstract
Ultra-thin quantum wells, with their unique charge confinement effects, are essential in enhancing the electronic and optical properties crucial for optoelectronic device optimization. This study focuses on theoretical investigations into radiative recombination lifetimes in nanostructures, specifically addressing both intra-subband (ISB: e-e) and band-to-band (BTB: e-hh) transitions within InGaN/GaN quantum wells (QWs). Our research unveils that the radiative lifetimes in ISB and BTB transitions are significantly influenced by external excitation, particularly in thin-layered QWs with strong confinement effects. In the case of ISB transitions (e-e), the recombination lifetimes span a range from 0.1 to 4.7 ns, indicating relatively longer durations. On the other hand, BTB transitions (e-hh) exhibit quicker lifetimes, falling within the range of 0.01 to 1 ns, indicating comparatively faster recombination processes. However, it is crucial to note that the thickness of the quantum well layer exerts a substantial influence on the radiative lifetime, whereas the presence of impurities has a comparatively minor impact on these recombination lifetimes. This research advances our understanding of transition lifetimes in quantum well systems, promising enhancements across optoelectronic applications, including laser diodes and advanced technologies in detection, sensing, and telecommunications.
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Affiliation(s)
- Redouane En-nadir
- LPS, Department of Physics, Sidi Mohamed Ben Abdullah University, P.O. Box 1796, Atlas Fez 30000, Morocco; (H.E.G.); (A.S.); (I.Z.)
| | - Mohamed A. Basyooni-M. Kabatas
- Department of Precision and Microsystems Engineering, Delft University of Technology, Mekelweg 2, 2628 CD Delft, The Netherlands
- Department of Nanotechnology and Advanced Materials, Graduate School of Applied and Natural Science, Selçuk University, Konya 42030, Turkey
| | - Mohammed Tihtih
- Institute of Ceramic and Polymer Engineering, University of Miskolc, 3515 Miskolc, Hungary;
| | - Walid Belaid
- Department of Physics, Faculty of Science, Sélçuk University, Konya 42031, Turkey;
| | - Ilyass Ez-zejjari
- ENSAM, University Hassan-II, Casablanca 20670, Morocco; (I.E.-z.); (E.G.M.)
| | - El Ghmari Majda
- ENSAM, University Hassan-II, Casablanca 20670, Morocco; (I.E.-z.); (E.G.M.)
| | - Haddou El Ghazi
- LPS, Department of Physics, Sidi Mohamed Ben Abdullah University, P.O. Box 1796, Atlas Fez 30000, Morocco; (H.E.G.); (A.S.); (I.Z.)
- ENSAM, University Hassan-II, Casablanca 20670, Morocco; (I.E.-z.); (E.G.M.)
| | - Ahmed Sali
- LPS, Department of Physics, Sidi Mohamed Ben Abdullah University, P.O. Box 1796, Atlas Fez 30000, Morocco; (H.E.G.); (A.S.); (I.Z.)
| | - Izeddine Zorkani
- LPS, Department of Physics, Sidi Mohamed Ben Abdullah University, P.O. Box 1796, Atlas Fez 30000, Morocco; (H.E.G.); (A.S.); (I.Z.)
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