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Wu H, Lian S, Zhang J, Wang B, Bai W, Ding G, Yang S, Liu Z, Zheng L, Ye C, Wang G. Construction and Multifunctional Photonic Applications of Light Absorption-Enhanced Silicon-Based Schottky Coupled Structures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2025; 21:e2406164. [PMID: 39548918 DOI: 10.1002/smll.202406164] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2024] [Revised: 10/22/2024] [Indexed: 11/18/2024]
Abstract
To expand the detection capabilities of silicon (Si)-based photodetector and address key scientific challenges such as low light absorption efficiency and short carrier lifetime in Si-based graphene photodetector. This work introduces a novel Si-based Schottky coupled structure by in situ growth of 3D-graphene and molybdenum disulfide quantum dots (MoS2 QDs) on Si substrates using chemical vapor deposition (CVD) and plasma-enhanced chemical vapor deposition (PECVD) techniques. The findings validate the "dual-enhanced absorption" effect, enhancing the understanding of the mechanisms that improve optoelectronic performance. The synergistic effect of 3D-graphene's natural nano-resonant cavity and MoS2 QDs enhances light absorption efficiency and extends carrier lifetime. Introducing MoS2 QDs broadens and intensifies the built-in electric field, promoting the separation of photogenerated electrons and holes. The photodetector exhibits a wideband light response in the wavelength range of 380-2200 nm. It stably outputs photocurrent under high-frequency (1 kHz) modulated laser (2200 nm), with a responsivity (R) of 40 mA W-1 and detectivity (D*) of 1.15 × 109 Jones. Photodetectors show the ability to process and encrypt complex binary signals and achieve versatility in "AND" gate and "OR" gate logic operations, as well as image sensing (240 × 200 pixels).
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Affiliation(s)
- Huijuan Wu
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo, 315211, P. R. China
| | - Shanshui Lian
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo, 315211, P. R. China
| | - Jinqiu Zhang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo, 315211, P. R. China
| | - Bingkun Wang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo, 315211, P. R. China
| | - Wenjun Bai
- Academy for Advanced Interdisciplinary Studies & Department of Materials Science and Engineering, Guangdong Provincial Key Laboratory of Computational Science and Material Design, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, P. R. China
| | - Guqiao Ding
- State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Siwei Yang
- State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Zhiduo Liu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Li Zheng
- State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Caichao Ye
- Academy for Advanced Interdisciplinary Studies & Department of Materials Science and Engineering, Guangdong Provincial Key Laboratory of Computational Science and Material Design, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, P. R. China
| | - Gang Wang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo, 315211, P. R. China
- State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
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Babuska T, Reed CL, Banga D, Larson SR, Mings A, Curry JF, Dugger MT. Electrodeposited Mo xS yO z/Ni Tribological Coatings. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2024; 40:5776-5784. [PMID: 38456666 PMCID: PMC10956497 DOI: 10.1021/acs.langmuir.3c03518] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2023] [Revised: 02/14/2024] [Accepted: 02/18/2024] [Indexed: 03/09/2024]
Abstract
Deposition of molybdenum disulfide (MoS2) coatings using physical vapor deposition (PVD) and mechanical burnishing has been widely assessed for solid lubricants in space applications but still suffers from line-of-sight constraints on complex geometries. Here, we highlight one of the first demonstrations of electrodeposited MoxSyOz and MoxSyOz/Ni thin-film coatings from aqueous solutions of ammonium tetrathiomolybdate for solid lubricant applications and their remarkable ability to provide low coefficients of friction and high wear resistance. Characterization of the coating morphology shows amorphous microstructures with a high oxygen content and cracking upon drying. Even so, electrodeposited MoxSyOz can achieve low steady-state coefficients of friction (μ ∼ 0.05-0.06) and wear rates (2.6 × 10-7 mm3/(N m)) approaching those of physical vapor deposited coatings (2.3 × 10-7 mm3/(N m)). Additionally, we show that adding dopants such as nickel increased the wear rate (7.5 × 10-7 mm3/(N m)) and initial coefficient of friction (μi = 0.23) due to compositional modifications such as dramatic sub-stoichiometry (S/Mo ∼ 1) and expression of a NiOx surface layer, although doping did reduce the degree of cracking upon drying.
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Affiliation(s)
- Tomas
F. Babuska
- Sandia
National Laboratories, Albuquerque, New Mexico 87185-0889, United States
| | - Christopher L. Reed
- Sandia
National Laboratories, Livermore, California 94551-0969, United States
| | - Dhego Banga
- Sandia
National Laboratories, Livermore, California 94551-0969, United States
| | - Steven R. Larson
- Sandia
National Laboratories, Albuquerque, New Mexico 87185-0889, United States
| | - Alexander Mings
- Sandia
National Laboratories, Albuquerque, New Mexico 87185-0889, United States
| | - John F. Curry
- Sandia
National Laboratories, Albuquerque, New Mexico 87185-0889, United States
| | - Michael T. Dugger
- Sandia
National Laboratories, Albuquerque, New Mexico 87185-0889, United States
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