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Huang D, Fu X, Wang K, Zheng Z, Zhang L, Ye Z, Jiang J, Han ZK, Zhu L. Enhanced Oxygen Vacancy Formation in Pt-WO 3 via W-OH Bond Cleavage Using Water-Based One-Step Electrospinning for High-Performance Gas Sensors. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2025; 41:6152-6163. [PMID: 40014765 DOI: 10.1021/acs.langmuir.4c05115] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/01/2025]
Abstract
Oxygen vacancies play a crucial role in charge transport and surface states in semiconductor metal oxides, significantly influencing various research fields, such as photocatalysis and gas sensor. Developing effective strategies to generate oxygen vacancies and thereby enhance device performance is highly desirable. In this study, we proposed a water-based one-step electrospinning method to introduce hydroxyl groups, leading to the synthesis of Pt-decorated WO3 nanofibers (Pt-WO3(H2O)) with increased oxygen vacancies. Density functional theory calculations revealed that the dissociation energy of W-OH is lower than that of the W-O bonds, promoting the formation of oxygen vacancies via W-OH bond cleavage. These vacancies reduced the adsorption energy of acetone on the WO3 surface, enhancing surface interactions. Consequently, the Pt-WO3(H2O) sensor exhibited an ultrahigh response of 82 to 1.8 ppm acetone at 300 °C, which was about 1 order of magnitude higher than the one fabricated by conventional electrospinning. These findings indicate that water-based electrospinning is an effective technique for generating oxygen vacancies in metal oxide nanofibers. Our high-performance acetone sensor, capable of detecting low concentrations, holds great potential for applications in noninvasive health screening.
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Affiliation(s)
- Denghui Huang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, P. R. China
- Zhejiang Provincial Engineering Research Center of Oxide Semiconductors for Environmental and Optoelectronic Applications, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, P. R. China
| | - Xiaolan Fu
- Department of Physics, School of Physical Science and Technology, Ningbo University, Ningbo 315211, P. R. China
| | - Kaixin Wang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, P. R. China
- Zhejiang Provincial Engineering Research Center of Oxide Semiconductors for Environmental and Optoelectronic Applications, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, P. R. China
| | - Zicheng Zheng
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, P. R. China
- Zhejiang Provincial Engineering Research Center of Oxide Semiconductors for Environmental and Optoelectronic Applications, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, P. R. China
| | - Liyuan Zhang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, P. R. China
- Zhejiang Provincial Engineering Research Center of Oxide Semiconductors for Environmental and Optoelectronic Applications, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, P. R. China
| | - Zhizhen Ye
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, P. R. China
- Zhejiang Provincial Engineering Research Center of Oxide Semiconductors for Environmental and Optoelectronic Applications, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, P. R. China
| | - Jie Jiang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, P. R. China
- Zhejiang Provincial Engineering Research Center of Oxide Semiconductors for Environmental and Optoelectronic Applications, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, P. R. China
| | - Zhong-Kang Han
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, P. R. China
| | - Liping Zhu
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, P. R. China
- Zhejiang Provincial Engineering Research Center of Oxide Semiconductors for Environmental and Optoelectronic Applications, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, P. R. China
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Liu M, Song P, Wang Q, Yan M. CsPbBr 3 Quantum Dot Modified In 2O 3 Nanofibers for Effective Detection of ppb-Level HCHO at Room Temperature under UV Illumination. ACS Sens 2024; 9:6040-6050. [PMID: 39535498 DOI: 10.1021/acssensors.4c01887] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2024]
Abstract
The design of high-performance and low-power formaldehyde (HCHO) gas sensors is of great interest to researchers for environmental monitoring and human health. Herein, In2O3/CsPbBr3 composites were successfully synthesized through an electrospinning and self-assembly approach, and their ultraviolet-activated (UV-activated) HCHO gas-sensing properties were investigated. The measurement data indicated that the In2O3/CsPbBr3 sensor possesses an excellent selectivity toward HCHO. The response of the In2O3/CsPbBr3 sensor to 2 ppm of HCHO was 31.4, which was almost 11 times larger than that of In2O3 alone. Besides, the In2O3/CsPbBr3 sensor also displayed extraordinary linearity (R2 = 0.9696), stable reversibility, and ideal humidity resistance. Interestingly, the gas-sensing properties of the In2O3/CsPbBr3 sensor were further improved (Ra/Rg = 54.8) under UV light irradiation. Meanwhile, the response/recovery time was shortened to 7/9 s. The improvement of HCHO-sensing properties might be ascribed to the distinctive structure of In2O3 nanofibers, the adsorption capacity of cesium lead bromide quantum dots (CsPbBr3 QDs) for UV light, and the synergistic effect of heterostructures between the components. Density functional theory (DFT) was implemented to discuss the adsorption ability and electronic characteristics of HCHO at the surface of In2O3/CsPbBr3 composites. Especially, this research points out new constructive thoughts for the exploitation of UV light improved gas-sensing materials.
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Affiliation(s)
- Miao Liu
- School of Chemistry and Chemical Engineering, University of Jinan, Jinan 250022, China
| | - Peng Song
- School of Material Science and Engineering, University of Jinan, Jinan 250022, China
| | - Qi Wang
- School of Material Science and Engineering, University of Jinan, Jinan 250022, China
| | - Mei Yan
- School of Chemistry and Chemical Engineering, University of Jinan, Jinan 250022, China
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Wang X, Li Y, Jin X, Sun G, Cao J, Wang Y. Effectively Improved CH 4 Sensing Performance of In 2O 3 Porous Hollow Nanospheres by Doping with Cd. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2024; 40:24740-24749. [PMID: 39501523 DOI: 10.1021/acs.langmuir.4c03927] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/20/2024]
Abstract
Recently, due to the promising application of metal oxide semiconductors in high-performance methane (CH4) sensors, more attention has been paid to the development of feasible strategies for improving CH4 sensing performance. Herein, we present a strategy of cadmium (Cd) doping to improve the CH4 sensing property of In2O3 porous hollow nanospheres (PHNSs). The Cd-doped In2O3 PHNSs were prepared via an impregnation-calcination approach with self-made carbon nanospheres as a hard template. The samples were characterized by various techniques to evaluate their structure, morphology, surface state, composition, and band gap. When applied as a sensitive material in the CH4 sensor, the Cd-doped In2O3 PHNSs, compared with bare In2O3 PHNSs, showed some significant improvements in performance, especially a reduced operating temperature (200 °C vs 300 °C), an enhanced response (9.5 vs 2.5 for 500 ppm of CH4), a faster response speed (16 s vs 276 s), and better selectivity. In addition, the Cd-doped In2O3 sensor can also maintain a commendable long-term stability, and the range of its response amplitude within 30 days is only 6.3%. The sensitization effects of the Cd dopant on the In2O3 PHNSs are discussed.
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Affiliation(s)
- Xiaohua Wang
- School of Chemistry and Chemical Engineering, Henan Polytechnic University, Jiaozuo 454000, China
- School of Chemical Engineering and Environmental Engineering, Jiaozuo University, Jiaozuo 454000, China
| | - Yanwei Li
- School of Chemistry and Chemical Engineering, Henan Polytechnic University, Jiaozuo 454000, China
- The Collaboration Innovation Center of Coal Safety Production of Henan Province, Henan Polytechnic University, Jiaozuo 454000, China
| | - Xinhui Jin
- School of Chemistry and Chemical Engineering, Henan Polytechnic University, Jiaozuo 454000, China
- The Collaboration Innovation Center of Coal Safety Production of Henan Province, Henan Polytechnic University, Jiaozuo 454000, China
| | - Guang Sun
- School of Chemistry and Chemical Engineering, Henan Polytechnic University, Jiaozuo 454000, China
- The Collaboration Innovation Center of Coal Safety Production of Henan Province, Henan Polytechnic University, Jiaozuo 454000, China
| | - Jianliang Cao
- School of Chemistry and Chemical Engineering, Henan Polytechnic University, Jiaozuo 454000, China
| | - Yan Wang
- The Collaboration Innovation Center of Coal Safety Production of Henan Province, Henan Polytechnic University, Jiaozuo 454000, China
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Chen Y, Han D, Wang Z, Gu F. Interface Defects and Carrier Regulation in MOF-Derived Co 3O 4/In 2O 3 Composite Materials for Enhanced Selective Detection of HCHO. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38659088 DOI: 10.1021/acsami.4c01077] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/26/2024]
Abstract
Gas sensors for real-time monitoring of low HCHO concentrations have promising applications in the field of health protection and air treatment, and this work reports a novel resistive gas sensor with high sensitivity and selectivity to HCHO. The MOF-derived hollow In2O3 was mixed with ZIF-67(Co) and calcined twice to obtain a hollow Co3O4/In2O3 (hereafter collectively termed MZO-6) composite enriched with oxygen vacancies, and tests such as XPS and EPR proved that the strong interfacial electronic coupling increased the oxygen vacancies. The gas-sensitive test results show that the hollow composite MZO-6 with abundant oxygen vacancies has a higher response value (11,003) to 10 ppm of HCHO and achieves a fast response/recovery time (11/181 s) for HCHO at a lower operating temperature (140 °C). The MZO-6 material significantly enhances the selectivity to HCHO and reduces the interference of common pollutant gases such as ethanol, acetone, and xylene. There is no significant fluctuation of resistance and response values in the 30-day long-term stability test, and the material has good stability. The synergistic effect of the heterostructure and oxygen vacancies altered the formaldehyde adsorption intermediate pathway and reduced the reaction activation energy, enhancing the HCHO responsiveness and selectivity of the MZO-6 material.
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Affiliation(s)
- Yi Chen
- State Key Laboratory of Chemical Resources Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Dongmei Han
- State Key Laboratory of Chemical Resources Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Zhihua Wang
- State Key Laboratory of Chemical Resources Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Fubo Gu
- State Key Laboratory of Chemical Resources Engineering, Beijing University of Chemical Technology, Beijing 100029, China
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