Structure-Dependent Spin Polarization in Polymorphic CdS:Y Semiconductor Nanocrystals

First-Principles Study of the Effect of Native Defects on Spin Polarization and Exchange Coupling Interaction in Semimetal V3O4

We use first-principles calculations to investigate the mechanism of the effect of native defects on the spin polarization and exchange coupling interaction in the V₃O₄ semimetal material. Our results reveal that, in contrast to other neutral defects, V vacancy defects in V₃O₄ at A/B sites are in favor of higher spin polarization degrees and lower defect formation energies. Compared to ideal V₃O₄, the V vacancy defects at A/B sites cause slightly lower spin polarization degrees but much higher exchange coupling interactions. Our results suggest an effective route to mediate the spin polarization and exchange coupling by defect engineering, which promotes the applications of the V₃O₄ semimetal material in spintronics.

Tuning the spin polarization in monolayer MoS2 through (Y,Yb) co-doping

Yb-Doped monolayer MoS₂ is ferromagnetic at room temperature, and this ferromagnetic state can be stabilized by Y co-doping.

Defect-induced room temperature ferromagnetism in Cu-doped In2S3 QDs

The practical application of existing diluted magnetic semiconductors (DMSs) depends crucially on improving their room temperature ferromagnetism. Doping, as an effective method, can be used to modulate the physical properties of semiconducting materials. Herein, we report on the observation of significant RTFM in a III-VI semiconductor compound doped with nonmagnetic impurities, Cu-doped In2S3 quantum dots (QDs) grown by a gas-liquid phase chemical deposition method. The effect of Cu doping on the electronic structure and optical and magnetic properties of In2S3 is studied systematically. The UV-vis and photoluminescence (PL) spectra reveal that Cu-doped In2S3 can moderately benefit the optical properties of pristine In2S3. Magnetic measurements show that the pristine In2S3 and Cu-doped In2S3 QDs exhibit obvious RTFM, which is ascribed to the role of intrinsic defects in accordance with the bound-magnetic-polaron (BMP) theory. Furthermore, first-principles calculations based on the spin density functional theory indicate that In vacancies and their complexes with Cu dopants play a crucial role in inducing ferromagnetism. These results suggest that the Cu-doped In2S3 QDs are promising candidates for spintronics and magneto-optical applications.

High pressure: a feasible tool for the synthesis of unprecedented inorganic compounds

After a simple classification of inorganic materials synthesized at high-temperature and high-pressure, this tutorial reviews the important research results in the field of high-temperature and high-pressure inorganic synthesis in the past 5 years.

Preparation of Boron Nitride Nanoparticles with Oxygen Doping and a Study of Their Room-Temperature Ferromagnetism

In this work, oxygen-doped boron nitride nanoparticles with room-temperature ferromagnetism have been synthesized by a new, facile, and efficient method. There are no metal magnetic impurities in the nanoparticles analyzed by X-ray photoelectron spectroscopy. The boron nitride nanoparticles exhibit a parabolic shape with increase in the reaction time. The saturation magnetization value reaches a maximum of 0.2975 emu g^-1 at 300 K when the reaction time is 12 h, indicating that the Curie temperature ( T_C) is higher than 300 K. Combined with first-principles calculation, the coupling between B 2p orbital, N 2p orbital, and O 2p orbital in the conduction bands is the main origin of room-temperature ferromagnetism and also proves that the magnetic moment changes according the oxygen-doping content change. Compared with other room temperature ferromagnetic semiconductors, boron nitride nanoparticles have widely potential applications in spintronic devices because of high temperature oxidation resistance and excellent chemical stability.