Ultrathin Films of VO2 on r-Cut Sapphire Achieved by Postdeposition Etching

Thermo-optic VO2-based silicon waveguide mid-infrared router with asymmetric activation thresholds and large bi-stability

We report a novel four-port optical router that exploits non-linear properties of vanadium dioxide (VO₂) phase-change material to achieve asymmetrical power threshold response with power limiting capability. The scope of this study lies within the concept, modeling, and simulation of the device, with practical considerations in mind for future experimental devices. The waveguide structure, designed to operate at the wavelength of 5.0 µm, is composed of a silicon core with air and silicon dioxide forming the cladding layers. Two ring resonators are employed to couple two straight waveguides, thus four individual ports. One of the ring resonators has a 100-nm-thick VO₂ layer responsible for non-linear behavior of the device. The router achieves 56.5 and 64.5 dB of power limiting at the forward and reverse operating modes, respectively. Total transmission in the inactivated mode is 75%. Bi-stability and latching behavior are demonstrated and discussed.

Heterogeneous integration of single-crystalline rutile nanomembranes with steep phase transition on silicon substrates

Unrestricted integration of single-crystal oxide films on arbitrary substrates has been of great interest to exploit emerging phenomena from transition metal oxides for practical applications. Here, we demonstrate the release and transfer of a freestanding single-crystalline rutile oxide nanomembranes to serve as an epitaxial template for heterogeneous integration of correlated oxides on dissimilar substrates. By selective oxidation and dissolution of sacrificial VO₂ buffer layers from TiO₂/VO₂/TiO₂ by H₂O₂, millimeter-size TiO₂ single-crystalline layers are integrated on silicon without any deterioration. After subsequent VO₂ epitaxial growth on the transferred TiO₂ nanomembranes, we create artificial single-crystalline oxide/Si heterostructures with excellent sharpness of metal-insulator transition (\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\triangle \rho /\rho$$\end{document}△ρ/ρ > 10³) even in ultrathin (<10 nm) VO₂ films that are not achievable via direct growth on Si. This discovery offers a synthetic strategy to release the new single-crystalline oxide nanomembranes and an integration scheme to exploit emergent functionality from epitaxial oxide heterostructures in mature silicon devices.

Unrestricted integration of single-crystal oxide films on Si substrates allows for exploitation of emerging functionality of new materials in mature silicon devices. Here the authors integrate epitaxial oxide films with sharp metal-insulator transition on Si substrates by epitaxial lift-off of a freestanding nanomembrane.

Enhanced Metal-Insulator Transition in Freestanding VO2 Down to 5 nm Thickness

Ultrathin freestanding membranes with a pronounced metal-insulator transition (MIT) have huge potential for future flexible electronic applications as well as provide a unique aspect for the study of lattice-electron interplay. However, the reduction of the thickness to an ultrathin region (a few nm) is typically detrimental to the MIT in epitaxial films, and even catastrophic for their freestanding form. Here, we report an enhanced MIT in VO₂-based freestanding membranes, with a lateral size up to millimeters and the VO₂ thickness down to 5 nm. The VO₂ membranes were detached by dissolving a Sr₃Al₂O₆ sacrificial layer between the VO₂ thin film and the c-Al₂O₃(0001) substrate, allowing the transfer onto arbitrary surfaces. Furthermore, the MIT in the VO₂ membrane was greatly enhanced by inserting an intermediate Al₂O₃ buffer layer. In comparison with the best available ultrathin VO₂ membranes, the enhancement of MIT is over 400% at a 5 nm VO₂ thickness and more than 1 order of magnitude for VO₂ above 10 nm. Our study widens the spectrum of functionality in ultrathin and large-scale membranes and enables the potential integration of MIT into flexible electronics and photonics.

Reconfigurable Vanadium Dioxide Nanomembranes and Microtubes with Controllable Phase Transition Temperatures

Two additional structural forms, free-standing nanomembranes and microtubes, are reported and added to the vanadium dioxide (VO₂) material family. Free-standing VO₂ nanomembranes were fabricated by precisely thinning as-grown VO₂ thin films and etching away the sacrificial layer underneath. VO₂ microtubes with a range of controllable diameters were rolled-up from the VO₂ nanomembranes. When a VO₂ nanomembrane is rolled-up into a microtubular structure, a significant compressive strain is generated and accommodated therein, which decreases the phase transition temperature of the VO₂ material. The magnitude of the compressive strain is determined by the curvature of the VO₂ microtube, which can be rationally and accurately designed by controlling the tube diameter during the rolling-up fabrication process. The VO₂ microtube rolling-up process presents a novel way to controllably tune the phase transition temperature of VO₂ materials over a wide range toward practical applications. Furthermore, the rolling-up process is reversible. A VO₂ microtube can be transformed back into a nanomembrane by introducing an external strain. Because of its tunable phase transition temperature and reversible shape transformation, the VO₂ nanomembrane-microtube structure is promising for device applications. As an example application, a tubular microactuator device with low driving energy but large displacement is demonstrated at various triggering temperatures.

Effects of Thickness on the Metal-Insulator Transition in Free-Standing Vanadium Dioxide Nanocrystals

Controlling solid state phase transitions via external stimuli offers rich physics along with possibilities of unparalleled applications in electronics and optics. The well-known metal-insulator transition (MIT) in vanadium dioxide (VO₂) is one instance of such phase transitions emerging from strong electronic correlations. Inducing the MIT using electric field has been investigated extensively for the applications in electrical and ultrafast optical switching. However, as the Thomas-Fermi screening length is very short, for considerable alteration in the material's properties with electric field induced MIT, crystals below 10 nm are needed. So far, the only way to achieve thin crystals of VO₂ has been via epitaxial growth techniques. Yet, stress due to lattice mismatch as well as interdiffusion with the substrate complicate the studies. Here, we show that free-standing vapor-phase grown crystals of VO₂ can be milled down to the desired thickness using argon ion-beam milling without compromising their electronic and structural properties. Among our results, we show that even below 4 nm thickness the MIT persists and the transition temperature is lowered in two-terminal devices as the crystal gets thinner. The findings in this Letter can be applied to similar strongly correlated materials to study quantum confinement effects.

Geometric constraints on phase coexistence in vanadium dioxide single crystals

The appearance of stripe phases is a characteristic signature of strongly correlated quantum materials, and its origin in phase-changing materials has only recently been recognized as the result of the delicate balance between atomic and mesoscopic materials properties. A vanadium dioxide (VO₂) single crystal is one such strongly correlated material with stripe phases. Infrared nano-imaging on low-aspect-ratio, single-crystal VO₂ microbeams decorated with resonant plasmonic nanoantennas reveals a novel herringbone pattern of coexisting metallic and insulating domains intercepted and altered by ferroelastic domains, unlike previous reports on high-aspect-ratio VO₂ crystals where the coexisting metal/insulator domains appear as alternating stripe phases perpendicular to the growth axis. The metallic domains nucleate below the crystal surface and grow towards the surface with increasing temperature as suggested by the near-field plasmonic response of the gold nanorod antennas.

High-performance thermal sensitive VO2(B) thin films prepared by sputtering with TiO2(A) buffer layer and first-principles calculations study

We present an effective strategy to modify the electronic properties of VO₂(B) by inducing elastic strain with TiO₂(A) buffer layer.