Simple Chemical Treatment to n-Dope Transition-Metal Dichalcogenides and Enhance the Optical and Electrical Characteristics

Chemical passivation of 2D transition metal dichalcogenides: strategies, mechanisms, and prospects for optoelectronic applications

The interest in obtaining high-quality monolayer transition metal dichalcogenides (TMDs) for optoelectronic device applications has been growing dramatically. However, the prevalence of defects and unwanted doping in these materials remain challenges, as they both limit optical properties and device performance. Surface chemical treatments of monolayer TMDs have been effective in improving their photoluminescence yield and charge transport properties. In this scenario, a systematic understanding of the underlying mechanism of chemical treatments will lead to a rational design of passivation strategies in future research, ultimately taking a step toward practical optoelectronic applications. We will therefore describe in this mini-review the strategies, progress, mechanisms, and prospects of chemical treatments to passivate and improve the optoelectronic properties of TMDs.

Synergetic Enhancement of Quantum Yield and Exciton Lifetime of Monolayer WS2 by Proximal Metal Plate and Negative Electric Bias

The efficiency of light emission is a critical performance factor for monolayer transition metal dichalcogenides (1L-TMDs) for photonic applications. While various methods have been studied to compensate for lattice defects to improve the quantum yield (QY) of 1L-TMDs, exciton-exciton annihilation (EEA) is still a major nonradiative decay channel for excitons at high exciton densities. Here, we demonstrate that the combined use of a proximal Au plate and a negative electric gate bias (NEGB) for 1L-WS2 provides a dramatic enhancement of the exciton lifetime at high exciton densities with the corresponding QY enhanced by 30 times and the EEA rate constant decreased by 80 times. The suppression of EEA by NEGB is attributed to the reduction of the defect-assisted EEA process, which we also explain with our theoretical model. Our results provide a synergetic solution to cope with EEA to realize high-intensity 2D light emitters using TMDs.

A pre-time-zero spatiotemporal microscopy technique for the ultrasensitive determination of the thermal diffusivity of thin films

Diffusion is one of the most ubiquitous transport phenomena in nature. Experimentally, it can be tracked by following point spreading in space and time. Here, we introduce a spatiotemporal pump-probe microscopy technique that exploits the residual spatial temperature profile obtained through the transient reflectivity when probe pulses arrive before pump pulses. This corresponds to an effective pump-probe time delay of 13 ns, determined by the repetition rate of our laser system (76 MHz). This pre-time-zero technique enables probing the diffusion of long-lived excitations created by previous pump pulses with nanometer accuracy and is particularly powerful for following in-plane heat diffusion in thin films. The particular advantage of this technique is that it enables quantifying thermal transport without requiring any material input parameters or strong heating. We demonstrate the direct determination of the thermal diffusivities of films with a thickness of around 15 nm, consisting of the layered materials MoSe₂ (0.18 cm²/s), WSe₂ (0.20 cm²/s), MoS₂ (0.35 cm²/s), and WS₂ (0.59 cm²/s). This technique paves the way for observing nanoscale thermal transport phenomena and tracking diffusion of a broad range of species.

Tuning the polymer thermal conductivity through structural modification induced by MoS2 bilayers

The present work refers to a physical and structural study of nanoconfined polymers in polymer-MoS₂ nanocomposites as a function of MoS₂-MoS₂ interlayer distance. We applied reverse nonequilibrium molecular dynamics (RNEMD) simulations to investigate the thermal conductivity (λ) of polyamide oligomers confined by MoS₂ bilayers. The results of this study indicate that thermal conductivity of polymer can be considerably enhanced when polymer chains are confined by MoS₂ sheets, this behavior is more pronounced by charged surfaces. The presence of MoS₂ surfaces leads to elongation as well as preferential alignment of polymer chains parallel to the MoS₂ surfaces, which in turn results in higher order and denser packing of polymer content and hence larger thermal conductivity in comparison to the bulk polymer. Additionally, the analysis of the number of hydrogen bonds (HBs) in confined polymer chains suggests that a combined effect of the mentioned structural modification and enlarged values of HBs may cooperatively contribute to high polymer thermal conductivity, facilitating phonon transport. The results reported here suggest a significant way to design confined polymer-MoS₂ composites for significantly improving thermal conductivity for a wide variety of applications.

Photoluminescence of monolayer MoS2 modulated by water/O2/laser irradiation

The low photoluminescence (PL) quantum yields of transition metal dichalcogenide monolayers have been a limiting factor for their optoelectronic applications. Various and even inconsistent mechanisms have been proposed to modulate their PL efficiencies. Herein, we use PL/Raman microspectroscopy and the corresponding in situ mapping, atomic force microscopy, and field-effect transistor (FET) characterization to investigate the changes in the structural and optical properties of monolayer MoS₂. Relatively low power density (<4.08 × 10⁵ W cm^-2) of laser irradiation in ambient air can cause a slight PL suppression effect on monolayer MoS₂, whereas relatively high power density (∼1.02 × 10⁶ W cm^-2) of laser irradiation brings significant PL enhancement. Experiments under different atmospheres reveal that the laser-irradiation-induced enhancement only occurs in the atmosphere containing O₂ and is more remarkable in pure O₂. In addition, physically adsorbed water can also induce PL enhancement of monolayer MoS₂. FET devices suggest that the adsorbed water produces a p-doping effect on MoS₂, and the laser irradiation in ambient air generates an n-doping effect, and both types of doping can enhance the PL intensity. The island-shaped defects caused by laser irradiation can be stabilized by oxygen atoms and act as trapping centers for excited trions or electrons, thus reducing the non-radiative recombination ratio and enhancing the PL intensity. The physically adsorbed water works in a similar way. A low power density of laser irradiation can sweep away the originally adsorbed H₂O on the surface, thus reducing the PL.

Neutralizing Defect States in MoS2 Monolayers

We report a method to neutralize the mid-gap defect states in MoS₂ monolayers using laser soaking of an organic/transition metal oxide (TMO) blend thin film. The treated MoS₂ monolayer shows negligible emission from defect states as compared to the as-exfoliated MoS₂, accompanied by a photoluminescence quantum yield improvement from 0.018 to 4.5% at excitation power densities of 10 W/cm². The effectiveness of the method toward defect neutralization is governed by the polaron pair generated at the organic/TMO interface, the diffusion of free electrons, and the subsequent formation of TMO radicals at the MoS₂ monolayer. The treated monolayers are stable in air, vacuum, and acetone environments, potentially enabling the fabrication of defect-free optoelectronic devices based on 2D materials and 2D/organic heterojunctions.

Towards future physics and applications via two-dimensional material NEMS resonators

Two-dimensional materials (2Dm) offer a unique insight into the world of quantum mechanics including van der Waals (vdWs) interactions, exciton dynamics and various other nanoscale phenomena. 2Dm are a growing family consisting of graphene, hexagonal-Boron Nitride (h-BN), transition metal dichalcogenides (TMDs), monochalcogenides (MNs), black phosphorus (BP), MXenes and 2D organic crystals such as small molecules (e.g., pentacene, C8 BTBT, perylene derivatives, etc.) and polymers (e.g., COF and MOF, etc.). They exhibit unique mechanical, electrical, optical and optoelectronic properties that are highly enhanced as the surface to volume ratio increases, resulting from the transition of bulk to the few- to mono- layer limit. Such unique attributes include the manifestation of highly tuneable bandgap semiconductors, reduced dielectric screening, highly enhanced many body interactions, the ability to withstand high strains, ferromagnetism, piezoelectric and flexoelectric effects. Using 2Dm for mechanical resonators has become a promising field in nanoelectromechanical systems (NEMS) for applications involving sensors and condensed matter physics investigations. 2Dm NEMS resonators react with their environment, exhibit highly nonlinear behaviour from tension induced stiffening effects and couple different physics domains. The small size and high stiffness of these devices possess the potential of highly enhanced force sensitivities for measuring a wide variety of un-investigated physical forces. This review highlights current research in 2Dm NEMS resonators from fundamental physics and an applications standpoint, as well as presenting future possibilities using these devices.

Combinatorial Large-Area MoS2/Anatase-TiO2 Interface: A Pathway to Emergent Optical and Optoelectronic Functionalities

The interface of transition-metal dichalcogenides (TMDCs) and high-k dielectric transition-metal oxides (TMOs) had triggered umpteen discourses because of the indubitable impact of TMOs in reducing the contact resistances and restraining the Fermi-level pinning for the metal-TMDC contacts. In the present work, we focus on the unresolved tumults of large-area TMDC/TMO interfaces, grown by adopting different techniques. Here, on a pulsed laser-deposited MoS₂ thin film, a layer of TiO₂ is grown by atomic layer deposition (ALD) and pulsed laser deposition (PLD). These two different techniques emanate the layer of TiO₂ with different crystallinities, thicknesses, and interfacial morphologies, subsequently influencing the electronic and optical properties of the interfaces. Contrasting the earlier reports of n-type doping at the exfoliated MoS₂/TiO₂ interfaces, the large-area MoS₂/anatase-TiO₂ films had realized a p-type doping of the underneath MoS₂, manifesting a boost in the extent of p-type doping with increasing thickness of TiO₂, as emerged from the X-ray photoelectron spectra. Density functional analysis of the MoS₂/anatase-TiO₂ interfaces, with pristine and interfacial defect configurations, could correlate the interdependence of doping and the terminating atomic surface of TiO₂ on MoS₂. The optical properties of the interface, encompassing photoluminescence, transient absorption and z-scan two-photon absorption, indicate the presence of defect-induced localized midgap levels in MoS₂/TiO₂ (PLD) and a relatively defect-free interface in MoS₂/TiO₂ (ALD), corroborating nicely with the corresponding theoretical analysis. From the investigation of optical properties, we indicate that the MoS₂/TiO₂ (PLD) interface may act as a promising saturable absorber, having a significant nonlinear response for the sub-band-gap excitations. Moreover, the MoS₂/TiO₂ (PLD) interface had exemplified better phototransport properties. A potential application of MoS₂/TiO₂ (PLD) is demonstrated by the fabrication of a p-type phototransistor with the ionic-gel top gate. This endeavor to analyze and perceive the MoS₂/TiO₂ interface establishes the prospectives of large-area interfaces in the field of optics and optoelectronics.

Boosting and Balancing Electron and Hole Mobility in Single- and Bilayer WSe2 Devices via Tailored Molecular Functionalization

WSe₂ is a layered ambipolar semiconductor enabling hole and electron transport, which renders it a suitable active component for logic circuitry. However, solid-state devices based on single- and bilayer WSe₂ typically exhibit unipolar transport and poor electrical performance when conventional SiO₂ dielectric and Au electrodes are used. Here, we show that silane-containing functional molecules form ordered monolayers on the top of the WSe₂ surface, thereby boosting its electrical performance in single- and bilayer field-effect transistors. In particular, by employing SiO₂ dielectric substrates and top Au electrodes, we measure unipolar mobility as high as μ_h = 150 cm² V^-1 s^-1 and μ_e = 17.9 cm² V^-1 s^-1 in WSe₂ single-layer devices when ad hoc molecular monolayers are chosen. Additionally, by asymmetric double-side functionalization with two different molecules, we provide opposite polarity to the top and bottom layer of bilayer WSe₂, demonstrating nearly balanced ambipolarity at the bilayer limit. Our results indicate that the controlled functionalization of the two sides of the WSe₂ mono- and bilayer flakes with highly ordered molecular monolayers offers the possibility to simultaneously achieve energy level engineering and defect functionalization, representing a path toward deterministic control over charge transport in 2D materials.

Photostability of Monolayer Transition-Metal Dichalcogenides in Ambient Air and Acidic/Basic Aqueous Solutions

We report on the photostability of monolayer (1L) transition-metal dichalcogenides (TMDCs) in air and in aqueous solutions, as probed using photoluminescence spectroscopy. 1L-WSe₂ was readily degraded under continuous irradiation of visible light in aqueous solutions, whereas 1L-MoS₂ was relatively stable in both ambient air and aqueous solutions. The stability difference between these two materials was mainly ascribed to the oxidization reaction at the interface of 1L-TMDCs and the O₂/H₂O redox system induced by both band alignment and photogenerated holes. This interpretation was strongly supported by the observation of the lower degradation rate of 1L-WSe₂ in the dark and in degassed water with a lower concentration of dissolved oxygen compared with the degradation rate of 1L-WSe₂ in distilled water. Furthermore, the degradation rate was also nearly proportional to the number of photogenerated carriers. The degradation rate under acidic conditions was smaller than that under the basic conditions. The results are attributed to the oxidation/reduction potential of 1L-WSe₂ and to the dissolution reaction of degraded species, both of which are strongly pH-dependent.

Flexible Molybdenum Disulfide (MoS2) Atomic Layers for Wearable Electronics and Optoelectronics

Flexible, stretchable, and bendable materials, including inorganic semiconductors, organic polymers, graphene, and transition metal dichalcogenides (TMDs), are attracting great attention in such areas as wearable electronics, biomedical technologies, foldable displays, and wearable point-of-care biosensors for healthcare. Among a broad range of layered TMDs, atomically thin layered molybdenum disulfide (MoS₂) has been of particular interest, due to its exceptional electronic properties, including tunable bandgap and charge carrier mobility. MoS₂ atomic layers can be used as a channel or a gate dielectric for fabricating atomically thin field-effect transistors (FETs) for electronic and optoelectronic devices. This review briefly introduces the processing and spectroscopic characterization of large-area MoS₂ atomically thin layers. The review summarizes the different strategies in enhancing the charge carrier mobility and switching speed of MoS₂ FETs by integrating high-κ dielectrics, encapsulating layers, and other 2D van der Waals layered materials into flexible MoS₂ device structures. The photoluminescence (PL) of MoS₂ atomic layers has, after chemical treatment, been dramatically improved to near-unity quantum yield. Ultraflexible and wearable active-matrix organic light-emitting diode (AM-OLED) displays and wafer-scale flexible resistive random-access memory (RRAM) arrays have been assembled using flexible MoS₂ transistors. The review discusses the overall recent progress made in developing MoS₂ based flexible FETs, OLED displays, nonvolatile memory (NVM) devices, piezoelectric nanogenerators (PNGs), and sensors for wearable electronic and optoelectronic devices. Finally, it outlines the perspectives and tremendous opportunities offered by a large family of atomically thin-layered TMDs.

In-Plane Isotropic/Anisotropic 2D van der Waals Heterostructures for Future Devices

Mono- to few-layers of 2D semiconducting materials have uniquely inherent optical, electronic, and magnetic properties that make them ideal for probing fundamental scientific phenomena up to the 2D quantum limit and exploring their emerging technological applications. This Review focuses on the fundamental optoelectronic studies and potential applications of in-plane isotropic/anisotropic 2D semiconducting heterostructures. Strong light-matter interaction, reduced dimensionality, and dielectric screening in mono- to few-layers of 2D semiconducting materials result in strong many-body interactions, leading to the formation of robust quasiparticles such as excitons, trions, and biexcitons. An in-plane isotropic nature leads to the quasi-2D particles, whereas, an anisotropic nature leads to quasi-1D particles. Hence, in-plane isotropic/anisotropic 2D heterostructures lead to the formation of quasi-1D/2D particle systems allowing for the manipulation of high binding energy quasi-1D particle populations for use in a wide variety of applications. This Review emphasizes an exciting 1D-2D particles dynamic in such heterostructures and their potential for high-performance photoemitters and exciton-polariton lasers. Moreover, their scopes are also broadened in thermoelectricity, piezoelectricity, photostriction, energy storage, hydrogen evolution reactions, and chemical sensor fields. The unique in-plane isotropic/anisotropic 2D heterostructures may open the possibility of engineering smart devices in the nanodomain with complex opto-electromechanical functions.

Near-field exciton imaging of chemically treated MoS2 monolayers

The exciton-dominated light emission of two-dimensional (2D) semiconductors is determined largely by the doping state and the formation of defects. Extensive studies have shown that chemical treatment critically modifies the doping state and defect state of chemical vapor deposition (CVD)-grown or exfoliated monolayer MoS2 (1L-MoS2), suggesting a promising possibility for engineering the optoelectronic properties of 2D semiconductors. However, chemical treatment inevitably modifies both the doping state and defect states, and their independent roles in the exciton emission of 1L-MoS2 have been difficult to study, significantly limiting the practical and reliable uses of chemical treatment to improve the optical properties of 1L-TMDs. Herein, we used near-field imaging and spectroscopy to investigate the effects of chemical treatment on the exciton emission of 1L-MoS2. CVD-grown 1L-MoS2 was treated with bis(trifluoromethane)-sulfonimide (TFSI) or 7,7,8,8-tetracyanoquinodimethane (TCNQ), and nanoscale maps of neutral exciton and trion emission before and after chemical treatment were obtained with 80 nm spatial resolution. A comparison of the local spatial and spectral compositions of neutral excitons and trions suggested that the p-doping effect of TFSI was especially strong around local defects, whereas electron depletion by TCNQ was spatially uniform. The specific reaction of TFSI to defect locations observed in our study provides the clue for the reason that TFSI is notably effective at improving the light emission of 1L-MoS2.

Two-dimensional light-emitting materials: preparation, properties and applications

We review the recent development in two-dimensional (2D) light-emitting materials and describe their preparation methods, optical/optoelectronic properties and applications.

Efficient Energy Transfer (EnT) in Pyrene- and Porphyrin-Based Mixed-Ligand Metal-Organic Frameworks

Designing and synthesizing the ordered light-harvesting systems, possessing complementary absorption and energy-transfer process between the chromophores, are essential steps to accomplish successful mimicking of the natural photosynthetic systems. Metal-organic frameworks (MOFs) can be considered as an ideal system to achieve this due to their highly ordered structure, superior synthetic versatility, and tailorable functionality. Herein, we have synthesized the new light-harvesting mixed-ligand MOFs (MLMs, MLM-1-3) via solvothermal reactions between a Zr₆ cluster and a mixture of appropriate ratio of 1,3,6,8-tetrakis(p-benzoic acid)pyrene and [5,10,15,20-tetrakis(4-carboxy-phenyl)porphyrinato]-Zn(II) ligands. The identical symmetry and connectivity of the two ligands of the MLMs was the key parameter of successful synthesis as a single MOF form, and the ample overlap between the emission spectrum of pyrene and the absorption spectrum of porphyrin provided the ideal platform to design an efficient-energy transfer (EnT) process within the MLMs. We obtained the nanoscale maps of the fluorescence intensities and lifetimes of microsize MLM grains for unambiguous visualization of EnT phenomena occurring between two ligands in MLMs. Moreover, due to complementary absorption and energy transfer between the two ligands in the MLMs, our MLMs performed as superior photoinduced singlet-oxygen generators, verifying the enhanced light-harvesting properties of the pyrene- and porphyrin-based MLMs.