Evolution of Structural and Electrical Properties of Oxygen-Deficient VO2 under Low Temperature Heating Process

Tuning the Intrinsic Stochasticity of Resistive Switching in VO2 Microresistors

Vanadium dioxide (VO2) microresistors exhibit resistive switching above a certain threshold voltage, allowing them to emulate neurons in neuromorphic systems. However, such devices present intrinsic cycle-to-cycle variations in their resistances and threshold voltages, which can be detrimental or beneficial, depending on their use. Here, we study this stochasticity in VO2 microresistors with various grain sizes and dimensions, through high-resolution electrical and optical measurements across numerous cycles. Our results highlight that the cycle-to-cycle variations in threshold voltage increase as the grain size becomes comparable to the device dimensions. We also present observations of multimodal threshold voltage distributions in the smaller-length resistors. To understand the underlying phenomenon, we investigate the relationship between the device insulating resistance and threshold voltage distributions, showing that these modes could correspond to distinct percolation paths and filaments. Our findings provide the first experimentally verified guidelines for designing VO2 devices with minimized/maximized stochasticity, depending on the targeted application.

W-doped VO2 for high-performance aqueous Zn-ion batteries

Aqueous Zn-ion batteries (AZIBs) have become one of the most promising energy storage devices due to their high safety and low cost. However, the development of stable cathodes with fast kinetics and high energy density is the key to achieving large-scale application of AZIBs. In this work, W-doped VO2 (W-VO2) is developed by a one-step hydrothermal method. Benefiting from the pre-insertion of W6+ and the introduction of the W-O bond, accomplishing an expanded lattice spacing and a stable structure, both improved kinetics and long cycle life are achieved. The W-VO2 delivers a specific capacity of 340.2 mA h g-1 at 0.2 A g-1, an excellent high-rate capability with a discharge capacity of 186.9 mA h g-1 at 10 A g-1, and long-term cycling stability with a capacity retention of 76.5% after 2000 cycles. The electrochemical performance of the W-VO2 has been greatly improved, compared with the pure VO2. The W doping strategy proposed here also presents an encouraging pathway for developing other high-energy and stable cathodes.

Electro-Thermal Characterization of Dynamical VO2 Memristors via Local Activity Modeling

Translating the surging interest in neuromorphic electronic components, such as those based on nonlinearities near Mott transitions, into large-scale commercial deployment faces steep challenges in the current lack of means to identify and design key material parameters. These issues are exemplified by the difficulties in connecting measurable material properties to device behavior via circuit element models. Here, the principle of local activity is used to build a model of VO2 /SiN Mott threshold switches by sequentially accounting for constraints from a minimal set of quasistatic and dynamic electrical and high-spatial-resolution thermal data obtained via in situ thermoreflectance mapping. By combining independent data sets for devices with varying dimensions, the model is distilled to measurable material properties, and device scaling laws are established. The model can accurately predict electrical and thermal conductivities and capacitances and locally active dynamics (especially persistent spiking self-oscillations). The systematic procedure by which this model is developed has been a missing link in predictively connecting neuromorphic device behavior with their underlying material properties, and should enable rapid screening of material candidates before employing expensive manufacturing processes and testing procedures.

Reconfigurable VO2 metasurfaces with hybrid electro-optical control: manipulating THz radiation with 0.3 W/cm2 light

Dynamicallyprogrammable metasurfaces capable of manipulating terahertz (THz) wavefronts in various manners depending on external controls are highly desired for next-generation wireless communication systems and new tools for THz diagnostics. Such metasurfaces may utilize the insulator-to-metal transition in V O 2, which can be induced both electrically and optically. Optical control is especially convenient for individual addressing to each meta-atom, but it is hampered by the high optical switching threshold of V O 2. We experimentally realize V O 2-based THz metasurfaces with hybrid electro-optical control when the metasurface is brought close to the transition point by an almost-threshold current, and then is easily switched by unfocused continuous-wave light. We were able to control the metasurface THz transmission by 0.4W/c m 2 near-IR light, while purely optical switching required tightly focused light with an intensity of >3×105 W/c m 2. After correcting for the fact that a tightly focused spot dissipates heat easier, we estimate that the optical switching threshold reduction due to the electric current alone is ∼2 orders of magnitude. Finally, coating the metasurface with Au nanoparticles further reduced the threshold by 30% due to plasmonic effects.

Tuning the Metal-Insulator Transition Properties of VO2 Thin Films with the Synergetic Combination of Oxygen Vacancies, Strain Engineering, and Tungsten Doping

Vanadium oxide (VO₂) is considered a Peierls–Mott insulator with a metal–insulator transition (MIT) at T_c = 68° C. The tuning of MIT parameters is a crucial point to use VO₂ within thermoelectric, electrochromic, or thermochromic applications. In this study, the effect of oxygen deficiencies, strain engineering, and metal tungsten doping are combined to tune the MIT with a low phase transition of 20 °C in the air without capsulation. Narrow hysteresis phase transition devices based on multilayer VO₂, WO₃, Mo_0.2W_0.8O_3, and/or MoO₃ oxide thin films deposited through a high vacuum sputtering are investigated. The deposited films are structurally, chemically, electrically, and optically characterized. Different conductivity behaviour was observed, with the highest value towards VO_1.75/WO_2.94 and the lowest VO_1.75 on FTO glass. VO_1.75/WO_2.94 showed a narrow hysteresis curve with a single-phase transition. Thanks to the role of oxygen vacancies, the MIT temperature decreased to 35 °C, while the lowest value (T_c = 20 °C) was reached with Mo_0.2W_0.8O₃/VO₂/MoO₃ structure. In this former sample, Mo_0.2W_0.8O₃ was used for the first time as an anti-reflective and anti-oxidative layer. The results showed that the MoO₃ bottom layer is more suitable than WO₃ to enhance the electrical properties of VO₂ thin films. This work is applied to fast phase transition devices.

Stress-Induced In Situ Modification of Transition Temperature in VO2 Films Capped by Chalcogenide

We attempted to modify the monoclinic–rutile structural phase transition temperature (T_tr) of a VO₂ thin film in situ through stress caused by amorphous–crystalline phase change of a chalcogenide layer on it. VO₂ films on C- or R-plane Al₂O₃ substrates were capped by Ge₂Sb₂Te₅ (GST) films by means of rf magnetron sputtering. T_tr of the VO₂ layer was evaluated through temperature-controlled measurements of optical reflection intensity and electrical resistance. Crystallization of the GST capping layer was accompanied by a significant drop in T_tr of the VO₂ layer underneath, either with or without a SiN_x diffusion barrier layer between the two. The shift of T_tr was by ~30 °C for a GST/VO₂ bilayered sample with thicknesses of 200/30 nm, and was by ~6 °C for a GST/SiN_x/VO₂ trilayered sample of 200/10/6 nm. The lowering of T_tr was most probably caused by the volume reduction in GST during the amorphous–crystalline phase change. The stress-induced in in situ modification of T_tr in VO₂ films could pave the way for the application of nonvolatile changes of optical properties in optoelectronic devices.

Efficient MoWO3/VO2/MoS2/Si UV Schottky photodetectors; MoS2 optimization and monoclinic VO2 surface modifications

The distinctive properties of strongly correlated oxides provide a variety of possibilities for modulating the properties of 2D transition metal dichalcogenides semiconductors; which represent a new class of superior optical and optoelectronic interfacing semiconductors. We report a novel approach to scaling-up molybdenum disulfide (MoS2) by combining the techniques of chemical and physical vapor deposition (CVD and PVD) and interfacing with a thin layer of monoclinic VO2. MoWO3/VO2/MoS2 photodetectors were manufactured at different sputtering times by depositing molybdenum oxide layers using a PVD technique on p-type silicon substrates followed by a sulphurization process in the CVD chamber. The high quality and the excellent structural and absorption properties of MoWO3/VO2/MoS2/Si with MoS2 deposited for 60 s enables its use as an efficient UV photodetector. The electronically coupled monoclinic VO2 layer on MoS2/Si causes a redshift and intensive MoS2 Raman peaks. Interestingly, the incorporation of VO2 dramatically changes the ratio between A-exciton (ground state exciton) and trion photoluminescence intensities of VO2/(30 s)MoS2/Si from < 1 to > 1. By increasing the deposition time of MoS2 from 60 to 180 s, the relative intensity of the B-exciton/A-exciton increases, whereas the lowest ratio at deposition time of 60 s refers to the high quality and low defect densities of the VO2/(60 s)MoS2/Si structure. Both the VO2/(60 s)MoS2/Si trion and A-exciton peaks have higher intensities compared with (60 s) MoS2/Si structure. The MoWO3/VO2/(60 s)MoS2/Si photodetector displays the highest photocurrent gain of 1.6, 4.32 × 108 Jones detectivity, and ~ 1.0 × 1010 quantum efficiency at 365 nm. Moreover, the surface roughness and grains mapping are studied and a low semiconducting-metallic phase transition is observed at ~ 40 °C.

Directional ionic transport across the oxide interface enables low-temperature epitaxy of rutile TiO2

Heterogeneous interfaces exhibit the unique phenomena by the redistribution of charged species to equilibrate the chemical potentials. Despite recent studies on the electronic charge accumulation across chemically inert interfaces, the systematic research to investigate massive reconfiguration of charged ions has been limited in heterostructures with chemically reacting interfaces so far. Here, we demonstrate that a chemical potential mismatch controls oxygen ionic transport across TiO₂/VO₂ interfaces, and that this directional transport unprecedentedly stabilizes high-quality rutile TiO₂ epitaxial films at the lowest temperature (≤ 150 °C) ever reported, at which rutile phase is difficult to be crystallized. Comprehensive characterizations reveal that this unconventional low-temperature epitaxy of rutile TiO₂ phase is achieved by lowering the activation barrier by increasing the “effective” oxygen pressure through a facile ionic pathway from VO_2-δ sacrificial templates. This discovery shows a robust control of defect-induced properties at oxide interfaces by the mismatch of thermodynamic driving force, and also suggests a strategy to overcome a kinetic barrier to phase stabilization at exceptionally low temperature.

The research to utilize chemical potential mismatch for materials synthesis has been limited across the oxide interface. Here, the authors show that directional ionic transport from the VO₂ layers stabilizes the rutile TiO₂ phase at extremely low temperatures, at which epitaxy is difficult, by effectively lowering the activation barrier for crystallization.

Low-cost VO2(M1) thin films synthesized by ultrasonic nebulized spray pyrolysis of an aqueous combustion mixture for IR photodetection

We report detailed structural, electrical transport and IR photoresponse properties of large area VO2(M1) thin films deposited by a simple cost-effective two-step technique. Phase purity was confirmed by XRD and Raman spectroscopy studies. The high quality of the films was further established by a phase change from low temperature monoclinic phase to high temperature tetragonal rutile phase at 68 °C from temperature dependent Raman studies. An optical band gap of 0.75 eV was estimated from UV-visible spectroscopy. FTIR studies showed 60% reflectance change at λ = 7.7 μm from low reflectivity at low temperature to high reflectivity at high temperature in a transition temperature of 68 °C. Electrical characterization showed a first order transition of the films with a resistance change of four orders of magnitude and TCR of -3.3% K-1 at 30 °C. Hall-effect measurements revealed the n-type nature of VO2 thin films with room temperature Hall mobility, μ e of 0.097 cm2 V-1 s-1, conductivity, σ of 0.102 Ω-1 cm-1 and carrier concentration, n e = 5.36 × 1017 cm-3. In addition, we fabricated a high photoresponsive IR photodetector based on VO2(M1) thin films with excellent stability and reproducibility in ambient conditions using a low-cost method. The VO2(M1) photodetector exhibited high sensitivity, responsivity, quantum efficiency, detectivity and photoconductive gain of 5.18%, 1.54 mA W-1, 0.18%, 3.53 × 1010 jones and 9.99 × 103 respectively upon illumination with a 1064 nm laser at a power density of 200 mW cm-2 and 10 V bias voltage at room temperature.

Hydrothermal One-Step Synthesis of Highly Dispersed M-Phase VO2 Nanocrystals and Application to Flexible Thermochromic Film

Preparation of ultrafine highly dispersed VO₂(M) nanoparticles that are essential materials to fabricate thermochromic flexible films remains a challenge, preventing effective use of their promising properties. Here, we report an original hydrothermal approach by controlling oxidizing atmosphere of reaction with hydrogen peroxide to prepare ultrafine VO₂(M) nanoparticles free from annealing. Hydrogen peroxide is separated from precursor solution in a reactor, which creates a moderate oxygenation environment, enabling the formation of stoichiometric VO₂(M) nanoparticles. The obtained VO₂(M) nanoparticles are well-dispersed, highly uniform, and single-phase, with an average particle size ∼30 nm. The flexible thermochromic films fabricated with the VO₂(M) nanoparticles exhibit excellent thermochromic performance with a solar modulation efficiency of 12.34% and luminous transmittance of 54.26%. While the films prepared with annealed nanoparticles show reduced transmittance due to light scattering of the large size particles resulting from agglomeration and growth during annealing. This work demonstrates a promising technique to realize moderate oxidizing atmosphere by hydrothermal process for preparing well-dispersed stoichiometric nano-oxides.

Revealing the role of oxygen vacancies on the phase transition of VO2 film from the optical-constant measurements

Vanadium dioxide (VO₂) material shows a distinct metal–insulator transition (MIT) at the critical temperature of ∼340 K. Similar to other correlated oxides, the MIT properties of VO₂ is always sensitive to those crystal defects such as oxygen vacancies. In this study, we investigated the oxygen vacancies related phase transition behavior of VO₂ crystal film and systematically examined the effect of oxygen vacancies from the optical constant measurements. The results indicated that the oxygen vacancies changed not only the electron occupancy on V 3d–O 2p hybrid-orbitals, but also the electron–electron correlation energy and the related band gap, which modulated the MIT behavior and decreased the critical temperature resultantly. Our work not only provided a facile way to modulate the MIT behavior of VO₂ crystal film, but also revealed the effects of the oxygen vacancies on the electronic inter-band transitions as well as the electronic correlations in driving this MIT process.

Optical conductivity spectroscopy was performed to reveal the role of oxygen vacancies during VO₂ metal–insulator transition.

Natural and induced growth of VO2 (M) on VO2 (B) ultrathin films

This work examines the synthesis of single phase VO₂ (B) thin films on LaAlO₃ (100) substrates, and the naturally-occurring and induced subsequent growth of VO₂ (M) phase on VO₂ (B) films. First, the thickness (t) dependence of structural, morphological and electrical properties of VO₂ films is investigated, evidencing that the growth of VO₂ (B) phase is progressively replaced by that of VO₂ (M) when t > ~11 nm. This change originates from the relaxation of the substrate-induced strain in the VO₂ (B) films, as corroborated by the simultaneous increase of surface roughness and decrease of the c-axis lattice parameter towards that of bulk VO₂ (B) for such films, yielding a complex mixed-phase structure composed of VO₂ (B)/VO₂ (M) phases, accompanied by the emergence of the VO₂ (M) insulator-to-metal phase transition. Second, the possibility of inducing this phase conversion, through a proper surface modification of the VO₂ (B) films via plasma treatment, is demonstrated. These natural and induced VO₂ (M) growths not only provide substantial insights into the competing nature of phases in the complex VO₂ polymorphs system, but can also be further exploited to synthesize VO₂ (M)/VO₂ (B) heterostructures at the micro/nanoscale for advanced electronics and energy applications.

Chemical and thermal properties of VO2 mechanochemically derived from V2O5 by co-milling with paraffin wax

A novel mechanochemical reduction process of V₂O₅ to VO₂ was established by milling with paraffin wax (PW, average molecular weight 254–646), serving as a reductant. The reduction progressed with increasing milling time and mass ratio V₂O₅ : PW (MRVP). The mechanochemically derived VO₂ became phase pure after milling for 3 h with an MRVP of 30 : 1 and exhibited a reversible polymorphic transformation between tetragonal and monoclinic phases at around 53–60 °C and 67–79 °C during heating and cooling, respectively. The latent heat was above 20 J g⁻¹ in both processes, being superior to those of commercial VO₂. Doping of starting V₂O₅ with Cr, Mo or W at 1 at% in the form of oxide did not increase the latent heat. This is another difference from the conventionally prepared doped VO₂. These anomalous heat storage properties of mechanochemically derived VO₂ were discussed mainly on the basis of X-ray photoelectron spectroscopy V_2p3/2 peaks combined with ion etching. The observed relatively high heat storage capacity of undoped VO₂ is primarily ascribed to the abundance of V⁴⁺ ionic states introduced during milling with PW, which were stabilized with simultaneously introduced structural degradation throughout the entire particles. The possible role of a remaining small amount of PW was also discussed.

Reduction of V₂O₅via a mechano-chemical route brings about unique electronic states of vanadium. The resulting VO₂ exhibits high latent heat storage during heating (a) and cooling (b).