Recombination Suppression in PbS Quantum Dot Heterojunction Solar Cells by Energy-Level Alignment in the Quantum Dot Active Layers

One-Pot Synthesis and Structural Evolution of Colloidal Cesium Lead Halide-Lead Sulfide Heterostructure Nanocrystals for Optoelectronic Applications

Heterostructures, combining perovskite nanocrystals (PNC) and chalcogenide quantum dots, could pave a path to optoelectronic device applications by enabling absorption in the near-infrared region, tailorable electronic properties, and stable crystal structures. Ideally, the heterostructure host material requires a similar lattice constant as the guest which is also constrained by the synthesis protocol and materials selectivity. Herein, we present an efficient one-pot hot-injection method to synthesize colloidal all-inorganic cesium lead halide-lead sulfide (CsPbX₃ (X = Cl, Br, I)-PbS) heterostructure nanocrystals (HNCs) via the epitaxial growth of the perovskite onto the presynthesized PbS nanocrystals (NCs). Optical and structural characterization evidenced the formation of heterostructures. The embedding of PbS NCs into CsPbX₃ perovskite allows the tuning of the absorption and emission from 400 to 1100 nm by tuning the size and composition of perovskite HNCs. The CsPbI₃-PbS HNCs show enhanced stability in ambient conditions. The stability, tunable optical properties, and variable band alignments accessible in this system would have implications in the design of novel optoelectronic applications such as light-emitting diodes, photodetectors, photocatalysis, and photovoltaics.

Open-Circuit Voltage Loss in Lead Chalcogenide Quantum Dot Solar Cells

Lead chalcogenide colloidal quantum dot solar cells (CQDSCs) have received considerable attention due to their broad and tunable absorption and high stability. Presently, lead chalcogenide CQDSC has achieved a power conversion efficiency of ≈14%. However, the state-of-the-art lead chalcogenide CQDSC still has an open-circuit voltage (V_oc ) loss of ≈0.45 V, which is significantly higher than those of c-Si and perovskite solar cells. Such high V_oc loss severely limits the performance improvement and commercialization of lead chalcogenide CQDSCs. In this review, the V_oc loss is first analyzed via detailed balance theory and the origin of V_oc loss from both solar absorber and interface is summarized. Subsequently, various strategies for improving the V_oc from the solar absorber, including the passivation strategies during the synthesis and ligand exchange are overviewed. The great impact of the ligand exchange process on CQD passivation is highlighted and the corresponding strategies to further reduce the V_oc loss are summarized. Finally, various strategies are discussed to reduce interface V_oc loss from charge transport layers. More importantly, the great potential of achieving performance breakthroughs via various organic hole transport layers is highlighted and the existing challenges toward commercialization are discussed.

Novel post-synthesis purification strategies and the ligand exchange processes in simplifying the fabrication of PbS quantum dot solar cells

Quantum dots (QDs) solids with iodide passivation are a key component for most of the well-performing PbS QDs solar cells. Usually, iodide passivation of oleic acid (OA) capped PbS QDs films is achieved by a solid-state ligand exchange process using tetrabutylammonium iodide (TBAI). This ligand exchange process has generally been reported to be incomplete, especially in higher thicknesses, affecting the properties of the films adversely, producing inconsistent results in the device structures fabricated. The present study is based on a systematic investigation of the TBAI exchange on PbS QDs films and the performance of the resulting solar cells. We could achieve a complete TBAI exchange in a sufficiently thick (∼240 nm) and dense QDs film deposited by a minimum number of coating steps, through the optimization of the number of post-synthesis washing cycles on the QDs. Detailed studies were carried out investigating the effect of the number of washing cycles on the quantity of OA before and after the exchange, the ligand exchange efficiency, the development of trap states and the resulting photovoltaic device performance. A power conversion efficiency of 5.55% was obtained for a device subjected to an optimum number of washing cycles.

Quantum dots (QDs) solids with iodide passivation are a key component for most of the well-performing PbS QDs solar cells.

Recent Developments of Solar Cells from PbS Colloidal Quantum Dots

PbS (lead sulfide) colloidal quantum dots consist of crystallites with diameters in the nanometer range with organic molecules on their surfaces, partly with additional metal complexes as ligands. These surface molecules are responsible for solubility and prevent aggregation, but the interface between semiconductor quantum dots and ligands also influences the electronic structure. PbS quantum dots are especially interesting for optoelectronic applications and spectroscopic techniques, including photoluminescence, photodiodes and solar cells. Here we concentrate on the latter, giving an overview of the optical properties of solar cells prepared with PbS colloidal quantum dots, produced by different methods and combined with diverse other materials, to reach high efficiencies and fill factors.

Photoexcited carrier dynamics in colloidal quantum dot solar cells: insights into individual quantum dots, quantum dot solid films and devices

The certified power conversion efficiency (PCE) record of colloidal quantum dot solar cells (QDSCs) has considerably improved from below 4% to 16.6% in the last few years. However, the record PCE value of QDSCs is still substantially lower than the theoretical efficiency. So far, there have been several reviews on recent and significant achievements in QDSCs, but reviews on photoexcited carrier dynamics in QDSCs are scarce. The photovoltaic performances of QDSCs are still limited by the photovoltage, photocurrent and fill factor that are mainly determined by the photoexcited carrier dynamics, including carrier (or exciton) generation, carrier extraction or transfer, and the carrier recombination process, in the devices. In this review, the photoexcited carrier dynamics in the whole QDSCs, originating from individual quantum dots (QDs) to the entire device as well as the characterization methods used for analyzing the photoexcited carrier dynamics are summarized and discussed. The recent research including photoexcited multiple exciton generation (MEG), hot electron extraction, and carrier transfer between adjacent QDs, as well as carrier injection and recombination at each interface of QDSCs are discussed in detail herein. The influence of photoexcited carrier dynamics on the physiochemical properties of QDs and photovoltaic performances of QDSC devices is also discussed.

Halide-, Hybrid-, and Perovskite-Functionalized Light Absorbing Quantum Materials of p-i-n Heterojunction Solar Cells

The p-i-n quantum dot (QD) solar cells were fabricated through the single-step deposition of both of its p-type and light absorbing quantum layers. The hole transport and light absorbing layers of these devices were made by the p- and n-type PbS QDs, which were functionalized with mercaptopropionic acid and different halide, hybrid, and perovskite ligands, respectively. Fabrication of such p-i-n devices by the single-step deposition of pre-exchanged colloidal QDs had not been fully investigated so far because of the low progression of ligand exchange processes, weak colloidal stability of pre-exchanged QDs in desired solvents, and remaining of the ligand exchange products along with particles. However, we showed that the type of ligand complexes, amino acid products of ligand exchange, and protic solvents are highly effective for increasing the ligand exchange progression and preparation of high colloidal stability QDs with superior photoluminescence properties. As well, the surface chemistry investigations by the means of Fourier transform infrared, nuclear magnetic resonance, X-ray photoelectron spectroscopy, X-ray diffraction, inductively coupled plasma optical emission spectrometry, carbon-hydrogen-nitrogen-sulfur elemental analysis, zeta potential, and high-resolution transmission electron microscopy were led to the presentation of new concepts about the theoretical and experimental ligand weight percentages, the mechanisms of solution-phase ligand exchange processes, and formation of ligands adlayer on the (111) facets of QDs. The pre-exchanged colloidal QDs showed very good desirability for the single-step deposition of dense, defects-free, and smooth QD layers. Regarding that, the p-i-n solar cells were successfully fabricated by the single-step deposition of both of the QD layers. Especially, the highest power conversion efficiency value of 6.40% was recorded for the devices in which the light absorbing layer was prepared by the composite-like QD-perovskite structures.

Understanding charge transfer and recombination by interface engineering for improving the efficiency of PbS quantum dot solar cells

In quantum dot heterojunction solar cells (QDHSCs), the QD active layer absorbs sunlight and then transfers the photogenerated electrons to an electron-transport layer (ETL). It is generally believed that the conduction band minimum (CBM) of the ETL should be lower than that of the QDs to enable efficient charge transfer from the QDs to the collection electrode (here, FTO) through the ETL. However, by employing Mg-doped ZnO (Zn_1-xMg_xO) as a model ETL in PbS QDHSCs, we found that an ETL with a lower CBM is not necessary to realize efficient charge transfer in QDHSCs. The existence of shallow defect states in the Zn_1-xMg_xO ETL can serve as additional charge-transfer pathways. In addition, the conduction band offset (CBO) between the ETL and the QD absorber has been, for the first time, revealed to significantly affect interfacial recombination in QDHSCs. We demonstrate that a spike in the band structure at the ETL/QD interface is useful for suppressing interfacial recombination and improving the open-circuit voltage. By varying the Mg doping level in ZnO, we were able to tune the CBM, defect distribution and carrier concentration in the ETL, which play key roles in charge transfer and recombination and therefore the device performance. PbS QDHSCs based on the optimized Zn_1-xMg_xO ETL exhibited a high power conversion efficiency of 10.6%. Our findings provide important guidance for enhancing the photovoltaic performance of QD-based solar cells.