High-Performance Organic Photodetectors from a High-Bandgap Indacenodithiophene-Based π-Conjugated Donor-Acceptor Polymer

Organic photodiodes: device engineering and applications

Organic photodiodes (OPDs) have shown great promise for potential applications in optical imaging, sensing, and communication due to their wide-range tunable photoelectrical properties, low-temperature facile processes, and excellent mechanical flexibility. Extensive research work has been carried out on exploring materials, device structures, physical mechanisms, and processing approaches to improve the performance of OPDs to the level of their inorganic counterparts. In addition, various system prototypes have been built based on the exhibited and attractive features of OPDs. It is vital to link the device optimal design and engineering to the system requirements and examine the existing deficiencies of OPDs towards practical applications, so this review starts from discussions on the required key performance metrics for different envisioned applications. Then the fundamentals of the OPD device structures and operation mechanisms are briefly introduced, and the latest development of OPDs for improving the key performance merits is reviewed. Finally, the trials of OPDs for various applications including wearable medical diagnostics, optical imagers, spectrometers, and light communications are reviewed, and both the promises and challenges are revealed.

Enhanced Static and Dynamic Properties of Highly Miscible Fullerene-Free Green-Selective Organic Photodetectors

We developed p-n junction organic photodetectors (OPDs) composed of a polymer donor and a nonfullerene acceptor (NFA) to increase both the responsivity (R) and detectivity (D*) while maintaining a narrow wavelength selectivity. The selection of the polymer donor and NFA with similar green (G) absorption is important for achieving G-wavelength selectivity in these OPDs, which differentiates them from current fullerene-based OPDs and NFA-based panchromatic absorption OPDs. In addition, mixing the polymer donor and asymmetric NFA was efficient toward increasing the miscibility and decreasing the interfacial energy difference of the blended films, resulting in the formation of a uniform and well-mixed nanomorphology in the photoconductive layer. Two-dimensional (2D) grazing incidence X-ray diffraction and Fourier-transform infrared spectroscopy revealed that the lamellar ordering of the polymer donor was enhanced in the blend film prepared with an asymmetric NFA, whereas the aggregation of a symmetric NFA in the blend films did not increase the lamellar ordering of the polymer donor. Consequently, we achieved an R value of 0.31 A/W and D* value of 2.0 × 10¹³ Jones with a full width at half-maximum value of 230 nm at -2 V and fast response time of 27 μs without any external bias in the asymmetric NFA-based OPDs. The enhancement in the lamellar ordering and miscibility of the blended films are crucial toward increasing the static and dynamic properties of OPDs.

Carrier Blocking Layer Materials and Application in Organic Photodetectors

As a promising candidate for next-generation photodetectors, organic photodetectors (OPDs) have gained increasing interest as they offer cost-effective fabrication methods using solution processes and a tunable spectral response range, making them particularly attractive for large area image sensors on lightweight flexible substrates. Carrier blocking layers engineering is very important to the high performance of OPDs that can select a certain charge carriers (holes or electrons) to be collected and suppress another carrier. Carrier blocking layers of OPDs play a critical role in reducing dark current, boosting their efficiency and long-time stability. This Review summarizes various materials for carrier blocking layers and some of the latest progress in OPDs. This provides the reader with guidelines to improve the OPD performance via carrier blocking layers engineering.

Highly Stable Indacenodithieno[3,2-b]thiophene-Based Donor-Acceptor Copolymers for Hybrid Electrochromic and Energy Storage Applications

Stable doping of indacenodithieno[3,2-b]thiophene (IDTT) structures enables easy color tuning and significant improvement in the charge storage capacity of electrochromic polymers, making use of their full potential as electrochromic supercapacitors and in other emerging hybrid applications. Here, the IDTT structure is copolymerized with four different donor-acceptor-donor (DAD) units, with subtle changes in their electron-donating and electron-withdrawing characters, so as to obtain four different donor-acceptor copolymers. The polymers attain important form factor requirements for electrochromic supercapacitors: desired switching between achromatic black and transparent states (L*a*b* 45.9, -3.1, -4.2/86.7, -2.2, and -2.7 for PIDTT-TBT), high optical contrast (72% for PIDTT-TBzT), and excellent electrochemical redox stability (Ired/Iox ca. 1.0 for PIDTT-EBE). Poly[indacenodithieno[3,2-b]thiophene-2,8-diyl-alt-4,7-bis(2,3-dihydrothieno[3,4-b][1,4]dioxin-5-yl)-2-(2-hexyldecyl)-2H-benzo[d][1,2,3]triazole-7,7'-diyl] (PIDTT-EBzE) stands out as delivering simultaneously a high contrast (69%) and doping level (>100%) and specific capacitance (260 F g-1). This work introduces IDTT-based polymers as bifunctional electro-optical materials for potential use in color-tailored, color-indicating, and self-regulating smart energy systems.

High-Detectivity Non-Fullerene Organic Photodetectors Enabled by a Cross-Linkable Electron Blocking Layer

The anode interlayer plays a critical role in the performance of organic photodetectors, which requires sufficient electron-blocking ability to simultaneously attain a high photocurrent and low dark current. Here, we developed two cross-linkable polymers, which can be deposited on the top of the widely used poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) and form a robust layer that can effectively suppress the electron injection from the anode under reverse bias. The optimized device with the resulting cross-linkable XP2 exhibited the lowest dark current density of 5.81 × 10^-9 A cm^-2 at -0.1 V, which is about 2 orders of magnitude lower than the control devices. A remarkable responsivity of 0.5 A W^-1 and a detectivity of >1 × 10¹³ Jones at a near-infrared wavelength of 800 nm were achieved. Of particular importance is that the resulting device exhibited a linear dynamic range of >135 dB associated with a high working frequency that is shorter than typical commercial digital imagers. The planar heterojunction devices demonstrate that the dark current is closely correlated to the charge generation, which relied on the highest occupied molecular orbital energy levels of the developed cross-linked interlays. The Mott-Schottky analysis revealed that the optimized cross-linked interlayer increased the depletion width of the devices.

Dark Current Reduction Strategy via a Layer-By-Layer Solution Process for a High-Performance All-Polymer Photodetector

The ideal bulk-heterojunction for high-performance organic photodetectors prefers a morphology with a vertically gradient component to suppress the leaking current. Here, we demonstrate an all-polymer photodetector with a segregated bulk-heterojunction active layer. This all-polymer photodetector exhibits a dramatically reduced dark current density because of its built-in charge blocking layer, with a responsivity of 0.25 A W^-1 at a wavelength of approximately 600 nm and specific detectivity of 5.68 × 10¹² cm Hz^1/2 W^-1 as calculated from the noise spectra at 1 kHz. To our knowledge, this is among the best performances reported for photodetectors based on both polymeric donor and acceptor in the photoactive layer. These findings present a facile approach to improving the specific detectivity of polymer photodetectors via a layer-by-layer solution process.

Synthesis of indacenodithienothiophene-based conjugated polymers containing electron-donating/accepting comonomers and their phototransistor characteristics

IDTT-based conjugated polymers with electron-accepting comonomers exhibit higher hole mobility (10-fold) and photoresponsivity (2-fold) than those with electron-donating comonomers.

Narrowband Ultraviolet Photodetectors Based on Nanocomposite Thin Films with High Gain and Low Driving Voltage

Narrowband ultraviolet (UV) photodetectors are highly desired in multiple areas. Photodetectors based on organic-inorganic nanocomposites offer high sensitivity, widely adjustable response range, light weight, and low-temperature solution processibility. However, the broad absorption range of organic and inorganic semiconductor materials makes it difficult to achieve a narrowband detection feature for nanocomposite photodetectors. In this work, nanocomposite thin films containing the wide band gap conjugated polymer poly[(9,9-dioctylfluorenyl-2,7-diyl)- alt- co-(bithiophene)] (F8T2) blended with wide band gap ZnO nanoparticles (NPs) serve as the active layers of the photodetectors. Narrowband UV photodetectors with high gain and low driving voltage are demonstrated by adopting a symmetric device structure, controlling the active layer composition and microstructure, and manipulating the light penetration depth in the active layer. The fabricated photodetector exhibits a high external quantum efficiency of 782% at 358 nm under a low forward bias of 3 V with the full-width at half-maximum of 16 nm. Combined with a low dark current, a high specific detectivity of 8.45 × 10¹² Jones is achieved. The impacts of the F8T2:ZnO NPs weight ratio and the device structure on the UV-selectivity and the device performance are investigated and discussed. Our method offers a pathway to design and fabricate narrowband UV photodetectors.

Visible-Light-Responsive High-Detectivity Organic Photodetectors with a 1 μm Thick Active Layer

Organic photodetectors (OPDs) are attracting attention for use in flexible and portable electronic applications such as image sensors, remote sensing, optical communications, and medical sensors because of their strong photon responsivity in thin films over a broad range of wavelengths. In particular, the efficient photon-to-current conversion of OPDs under visible light allows their use in indirect X-ray detectors using scintillators to convert X-rays to visible light. The polymer poly(4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2- b:4,5- b']dithiophene- co-5-(2-hexyldecyl)-1,3-bis(6-octylthieno[3,2- b]thiophen-2-yl)-4 H-thieno[3,4- c]pyrrole-4,6(5 H)-dione) (PBDTT-8ttTPD) shows strong absorption bands in the region of 500-650 nm, as well as high hole mobility, which provides excellent photoresponsivity and photon-to-current conversion efficiency. A p-n junction photodetector was fabricated by blending PBDTT-8ttTPD and [6,6]-phenyl C₇₁ butyric acid methyl ester (PC₇₁BM) and varying the thickness of the active layer (260-1100 nm). The PBDTT-8ttTPD:PC₇₁BM-based OPDs show promising photodetecting properties having a low dark current of 3.72 × 10^-9 A cm^-2 and high responsivity of 0.39 A W^-1 because of the well-controlled morphology, high molar absorption coefficient, and excellent carrier mobility of the PBDTT-8ttTPD:PC₇₁BM layer. Consequently, the specific detectivity of the PBDTT-8ttTPD-based OPD devices was 1.13 × 10¹³ Jones at -2 V on irradiation with a light-emitting diode (530 nm wavelength) with a power density of 55.6 μW cm^-2.

Setup to Study the in Situ Evolution of Both Photoluminescence and Absorption during the Processing of Organic or Hybrid Semiconductors

In situ measurement techniques, applied during the solution processing of novel semiconductors such as organic semiconductors or hybrid perovskites, have become more and more important to understand their film formation. In that context, it is crucial to determine how the optical properties, namely photoluminescence (PL) and absorption, evolve during processing. However, until now PL and absorption have mostly been investigated independently, significantly reducing the potential insights into film formation dynamics. To tackle this issue we present the development of a detection system that allows simultaneous measurement of full absorption and PL spectra during solution processing of the investigated film. We also present a spin-coater system attachable to the detection system, where the temperature of the substrate on which the film is processed can be changed. We performed test measurements by spin coating the well-known conjugated polymer P3HT demonstrating the potential of this technique. By considering absorption and corresponding PL, we extract the PL quantum yield (PLQY) during processing, which decreases with substrate temperature. Furthermore, we identify a significant red shift of the PL just prior to the onset of the aggregation process, indicating the importance of chain planarization prior to solid film formation.

Experimental and theoretical investigations on the optical and electrochemical properties of π-conjugated donor-acceptor-donor (DAD) compounds toward a universal model

A series of nine (9) donor-acceptor-donor (DAD) π-conjugated small molecules were synthesized via palladium catalyzed Stille aromatic cross-coupling reactions by the combination of six (6) heterocycle building blocks (thiophene, furan, thiazole, 2,1,3-benzothiadiazole, 2,1,3-pyridinothiadiazole, thienothiadiazole) acting as electron donating (thiazole, furan, thiophene) and electron deficient (benzothiadiazole, pyridinethiadiazole, thienothiadiazole) units. These model compounds enable determining the correspondence between the theoretical and experimental optical and electrochemical properties for the first time, via Density Functional Theory (DFT), time-dependent DFT, UV-Vis spectroscopy, and cyclic voltammetry, accordingly. The obtained theoretical models can be utilized for the design and synthesis of new DAD structures with precise optical bandgaps, absorption maxima, and energy levels suitable for different optoelectronic applications.

3D Printed Polymer Photodetectors

Extrusion-based 3D printing, an emerging technology, has been previously used in the comprehensive fabrication of light-emitting diodes using various functional inks, without cleanrooms or conventional microfabrication techniques. Here, polymer-based photodetectors exhibiting high performance are fully 3D printed and thoroughly characterized. A semiconducting polymer ink is printed and optimized for the active layer of the photodetector, achieving an external quantum efficiency of 25.3%, which is comparable to that of microfabricated counterparts and yet created solely via a one-pot custom built 3D-printing tool housed under ambient conditions. The devices are integrated into image sensing arrays with high sensitivity and wide field of view, by 3D printing interconnected photodetectors directly on flexible substrates and hemispherical surfaces. This approach is further extended to create integrated multifunctional devices consisting of optically coupled photodetectors and light-emitting diodes, demonstrating for the first time the multifunctional integration of multiple semiconducting device types which are fully 3D printed on a single platform. The 3D-printed optoelectronic devices are made without conventional microfabrication facilities, allowing for flexibility in the design and manufacturing of next-generation wearable and 3D-structured optoelectronics, and validating the potential of 3D printing to achieve high-performance integrated active electronic materials and devices.

BN Embedded Polycyclic π-Conjugated Systems: Synthesis, Optoelectronic Properties, and Photovoltaic Applications

In the periodic table of elements, boron (B, atomic number, 5) and nitrogen (N, atomic number, 7) are neighboring to the carbon (C, atomic number, 6). Thus, the total electronic number of two carbons (12) is equal to the electronic sum of one boron (5) and one nitrogen (7). Accordingly, replacing two carbons with one boron and one nitrogen in a π-conjugated structure gives an isoelectronic system, i.e., the BN perturbed π-conjugated system, comparing to their all-carbon analogs. The BN embedded π-conjugated systems have unique properties, e.g., optical absorption, emission, energy levels, bandgaps, and packing order in contrast to their all-carbon analogs and have been intensively studied in terms of novel synthesis, photophysical characterizations, and electronic applications in recent years. In this review, we try to summarize the synthesis methods, optoelectronic properties, and progress in organic photovoltaic (OPV) applications of the representative BN embedded polycyclic π-conjugated systems. Firstly, the narrative will be commenced with a general introduction to the BN units, i.e., B←N coordination bond, B-N covalent bond, and N-B←N group. Then, the representative synthesis strategies toward π-conjugated systems containing B←N coordination bond, B-N covalent bond, and N-B←N group will be summarized. Afterwards, the frontier orbital energy levels, optical absorption, packing order in solid state, charge transportation ability, and photovoltaic performances of typical BN embedded π-conjugated systems will be discussed. Finally, a prospect will be proposed on the OPV materials of BN doped π-conjugated systems, especially their potential applications to the small molecules organic solar cells.