Design of a Vertical Composite Thin Film System with Ultralow Leakage To Yield Large Converse Magnetoelectric Effect

Interface-related phenomena in epitaxial complex oxide ferroics across different thin film platforms: opportunities and challenges

Interfaces in complex oxides give rise to fascinating new physical phenomena arising from the interconnected spin, lattice, charge and orbital degrees of freedom. Most commonly, interfaces are engineered in epitaxial superlattice films. Of growing interest also are epitaxial vertically aligned nanocomposite films where interfaces form by self-assembly. These two thin film forms offer different capabilities for materials tuning and have been explored largely separately from one another. Ferroics (ferroelectric, ferromagnetic, multiferroic) are among the most fascinating phenomena to be manipulated using interface effects. Hence, in this review we compare and contrast the ferroic properties that arise in these two different film forms, highlighting exemplary materials combinations which demonstrate novel, enhanced and/or emergent ferroic functionalities. We discuss the origins of the observed functionalities and propose where knowledge can be translated from one materials form to another, to potentially produce new functionalities. Finally, for the two different film forms we present a perspective on underexplored/emerging research directions.

Creating Ferromagnetic Insulating La0.9Ba0.1MnO3 Thin Films by Tuning Lateral Coherence Length

In this work, heteroepitaxial vertically aligned nanocomposite (VAN) La_0.9Ba_0.1MnO₃ (LBMO)-CeO₂ films are engineered to produce ferromagnetic insulating (FMI) films. From combined X-ray photoelectron spectroscopy, X-ray diffraction, and electron microscopy, the elimination of the insulator-metal (I-M) transition is shown to result from the creation of very small lateral coherence lengths (with the corresponding lateral size ∼ 3 nm (∼7 u.c.)) in the LBMO matrix, achieved by engineering a high density of CeO₂ nanocolumns in the matrix. The small lateral coherence length leads to a shift in the valence band maximum and reduction of the double exchange (DE) coupling. There is no "dead layer" effect at the smallest achieved lateral coherence length of ∼3 nm. The FMI behavior obtained by lateral dimensional tuning is independent of substrate interactions, thus intrinsic to the film itself and hence not related to film thickness. The unique properties of VAN films give the possibility for multilayer spintronic devices that can be made without interface degradation effects between the layers.

Competing Interface and Bulk Effect-Driven Magnetoelectric Coupling in Vertically Aligned Nanocomposites

Room-temperature magnetoelectric (ME) coupling is developed in artificial multilayers and nanocomposites composed of magnetostrictive and electrostrictive materials. While the coupling mechanisms and strengths in multilayers are widely studied, they are largely unexplored in vertically aligned nanocomposites (VANs), even though theory has predicted that VANs exhibit much larger ME coupling coefficients than multilayer structures. Here, strong transverse and longitudinal ME coupling in epitaxial BaTiO3:CoFe2O4 VANs measured by both optical second harmonic generation and piezoresponse force microscopy under magnetic fields is reported. Phase field simulations have shown that the ME coupling strength strongly depends on the vertical interfacial area which is ultimately controlled by pillar size. The ME coupling in VANs is determined by the competition between the vertical interface coupling effect and the bulk volume conservation effect. The revealed mechanisms shed light on the physical insights of vertical interface coupling in VANs in general, which can be applied to a variety of nanocomposites with different functionalities beyond the studied ME coupling effect.

Design and Manipulation of Ferroic Domains in Complex Oxide Heterostructures

The current burst of device concepts based on nanoscale domain-control in magnetically and electrically ordered systems motivates us to review the recent development in the design of domain engineered oxide heterostructures. The improved ability to design and control advanced ferroic domain architectures came hand in hand with major advances in investigation capacity of nanoscale ferroic states. The new avenues offered by prototypical multiferroic materials, in which electric and magnetic orders coexist, are expanding beyond the canonical low-energy-consuming electrical control of a net magnetization. Domain pattern inversion, for instance, holds promises of increased functionalities. In this review, we first describe the recent development in the creation of controlled ferroelectric and multiferroic domain architectures in thin films and multilayers. We then present techniques for probing the domain state with a particular focus on non-invasive tools allowing the determination of buried ferroic states. Finally, we discuss the switching events and their domain analysis, providing critical insight into the evolution of device concepts involving multiferroic thin films and heterostructures.