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Merces L, Ferro LMM, Nawaz A, Sonar P. Advanced Neuromorphic Applications Enabled by Synaptic Ion-Gating Vertical Transistors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2305611. [PMID: 38757653 DOI: 10.1002/advs.202305611] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/11/2023] [Revised: 12/07/2023] [Indexed: 05/18/2024]
Abstract
Bioinspired synaptic devices have shown great potential in artificial intelligence and neuromorphic electronics. Low energy consumption, multi-modal sensing and recording, and multifunctional integration are critical aspects limiting their applications. Recently, a new synaptic device architecture, the ion-gating vertical transistor (IGVT), has been successfully realized and timely applied to perform brain-like perception, such as artificial vision, touch, taste, and hearing. In this short time, IGVTs have already achieved faster data processing speeds and more promising memory capabilities than many conventional neuromorphic devices, even while operating at lower voltages and consuming less power. This work focuses on the cutting-edge progress of IGVT technology, from outstanding fabrication strategies to the design and realization of low-voltage multi-sensing IGVTs for artificial-synapse applications. The fundamental concepts of artificial synaptic IGVTs, such as signal processing, transduction, plasticity, and multi-stimulus perception are discussed comprehensively. The contribution draws special attention to the development and optimization of multi-modal flexible sensor technologies and presents a roadmap for future high-end theoretical and experimental advancements in neuromorphic research that are mostly achievable by the synaptic IGVTs.
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Affiliation(s)
- Leandro Merces
- Research Center for Materials, Architectures, and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
| | - Letícia Mariê Minatogau Ferro
- Research Center for Materials, Architectures, and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
| | - Ali Nawaz
- Center for Sensors and Devices, Bruno Kessler Foundation (FBK), Trento, 38123, Italy
| | - Prashant Sonar
- School of Chemistry and Physics, Queensland University of Technology (QUT), Brisbane, QLD, 4000, Australia
- Centre for Materials Science, Queensland University of Technology, 2 George Street, Brisbane, QLD, 4000, Australia
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2
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Tu Y, Qian W, Dong M, Chen G, Quan Y, Huang W, Dong C. Enhanced Field Emission and Low-Pressure Hydrogen Sensing Properties from Al-N-Co-Doped ZnO Nanorods. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:863. [PMID: 38786819 PMCID: PMC11124068 DOI: 10.3390/nano14100863] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/07/2024] [Revised: 05/06/2024] [Accepted: 05/08/2024] [Indexed: 05/25/2024]
Abstract
ZnO nanostructures show great potential in hydrogen sensing at atmospheric conditions for good gas adsorption abilities. However, there is less research on low-pressure hydrogen sensing performance due to its low concentration and in-homogeneous distributions under low-pressure environments. Here, we report the low-pressure hydrogen sensing by the construction of Al-N-co-doped ZnO nanorods based on the adsorption-induced field emission enhancement effect in the pressure range of 10-7 to 10-3 Pa. The investigation indicates that the Al-N-co-doped ZnO sample is the most sensitive to low-pressure hydrogen sensing among all ZnO samples, with the highest sensing current increase of 140% for 5 min emission. In addition, the increased amplitude of sensing current for the Al-N-co-doped ZnO sample could reach 75% at the pressure 7 × 10-3 Pa for 1 min emission. This work not only expands the hydrogen sensing applications to the co-doped ZnO nanomaterials, but also provides a promising approach to develop field emission cathodes with strong low-pressure hydrogen sensing effect.
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Affiliation(s)
| | - Weijin Qian
- Wenzhou Key Lab of Micro-Nano Optoelectronic Devices, Wenzhou University, Wenzhou 325035, China; (Y.T.); (M.D.); (G.C.); (Y.Q.); (W.H.)
| | | | | | | | | | - Changkun Dong
- Wenzhou Key Lab of Micro-Nano Optoelectronic Devices, Wenzhou University, Wenzhou 325035, China; (Y.T.); (M.D.); (G.C.); (Y.Q.); (W.H.)
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3
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Merces L, Ferro LMM, Thomas A, Karnaushenko DD, Luo Y, Egunov AI, Zhang W, Bandari VK, Lee Y, McCaskill JS, Zhu M, Schmidt OG, Karnaushenko D. Bio-Inspired Dynamically Morphing Microelectronics toward High-Density Energy Applications and Intelligent Biomedical Implants. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2313327. [PMID: 38402420 DOI: 10.1002/adma.202313327] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2023] [Revised: 02/09/2024] [Indexed: 02/26/2024]
Abstract
Choreographing the adaptive shapes of patterned surfaces to exhibit designable mechanical interactions with their environment remains an intricate challenge. Here, a novel category of strain-engineered dynamic-shape materials, empowering diverse multi-dimensional shape modulations that are combined to form fine-grained adaptive microarchitectures is introduced. Using micro-origami tessellation technology, heterogeneous materials are provided with strategic creases featuring stimuli-responsive micro-hinges that morph precisely upon chemical and electrical cues. Freestanding multifaceted foldable packages, auxetic mesosurfaces, and morphable cages are three of the forms demonstrated herein of these complex 4-dimensional (4D) metamaterials. These systems are integrated in dual proof-of-concept bioelectronic demonstrations: a soft foldable supercapacitor enhancing its power density (≈108 mW cm-2 ), and a bio-adaptive device with a dynamic shape that may enable novel smart-implant technologies. This work demonstrates that intelligent material systems are now ready to support ultra-flexible 4D microelectronics, which can impart autonomy to devices culminating in the tangible realization of microelectronic morphogenesis.
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Affiliation(s)
- Leandro Merces
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09126, Chemnitz, Germany
| | - Letícia Mariê Minatogau Ferro
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09126, Chemnitz, Germany
| | - Aleena Thomas
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Institute of Chemistry, Chemnitz University of Technology, 09107, Chemnitz, Germany
| | - Dmitriy D Karnaushenko
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09126, Chemnitz, Germany
| | - Yumin Luo
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09126, Chemnitz, Germany
| | - Aleksandr I Egunov
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09126, Chemnitz, Germany
| | - Wenlan Zhang
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09126, Chemnitz, Germany
| | - Vineeth K Bandari
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09126, Chemnitz, Germany
| | - Yeji Lee
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09126, Chemnitz, Germany
| | - John S McCaskill
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- European Centre for Living Technology (ECLT), Venice, 30123, Italy
| | - Minshen Zhu
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
| | - Oliver G Schmidt
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09126, Chemnitz, Germany
- Nanophysics, Faculty of Physics, Dresden University of Technology, 01062, Dresden, Germany
| | - Daniil Karnaushenko
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
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4
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Wu D, Su Y, Li R, Zhao J, Yang L, Yang P. Anisotropic and Highly Sensitive Flexible Strain Sensors Based on Carbon Nanotubes and Iron Nanowires for Human-Computer Interaction Systems. Int J Mol Sci 2023; 24:13029. [PMID: 37685836 PMCID: PMC10488179 DOI: 10.3390/ijms241713029] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/23/2023] [Revised: 08/12/2023] [Accepted: 08/15/2023] [Indexed: 09/10/2023] Open
Abstract
Flexible strain sensors for multi-directional strain detection are crucial in complicated hman-computer interaction (HCI) applications. However, enhancing the anisotropy and sensitivity of the sensors for multi-directional detection in a simple and effective method remains a significant issue. Therefore, this study proposes a flexible strain sensor with anisotropy and high sensitivity based on a high-aspect-ratio V-groove array and a hybrid conductive network of iron nanowires and carbon nanotubes (Fe NWs/CNTs). The sensor exhibits significant anisotropy, with a difference in strain detection sensitivity of up to 35.92 times between two mutually perpendicular directions. Furthermore, the dynamic performance of the sensor shows a good response rate, ranging from 223 ms to 333 ms. The sensor maintains stability and consistent performance even after undergoing 1000 testing cycles. Additionally, the constructed flexible strain sensor is tested using the remote control application of a trolley, demonstrating its high potential for usage in practical HCI systems. This research offers a significant competitive advantage in the development of flexible strain sensors in the field of HCI.
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Affiliation(s)
| | | | - Rui Li
- School of Automation, Chongqing University of Posts and Telecommunications, Chongqing 400065, China; (D.W.); (Y.S.); (J.Z.); (L.Y.)
| | | | | | - Pingan Yang
- School of Automation, Chongqing University of Posts and Telecommunications, Chongqing 400065, China; (D.W.); (Y.S.); (J.Z.); (L.Y.)
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5
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Li T, Bandari VK, Schmidt OG. Molecular Electronics: Creating and Bridging Molecular Junctions and Promoting Its Commercialization. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209088. [PMID: 36512432 DOI: 10.1002/adma.202209088] [Citation(s) in RCA: 12] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/02/2022] [Revised: 11/28/2022] [Indexed: 06/02/2023]
Abstract
Molecular electronics is driven by the dream of expanding Moore's law to the molecular level for next-generation electronics through incorporating individual or ensemble molecules into electronic circuits. For nearly 50 years, numerous efforts have been made to explore the intrinsic properties of molecules and develop diverse fascinating molecular electronic devices with the desired functionalities. The flourishing of molecular electronics is inseparable from the development of various elegant methodologies for creating nanogap electrodes and bridging the nanogap with molecules. This review first focuses on the techniques for making lateral and vertical nanogap electrodes by breaking, narrowing, and fixed modes, and highlights their capabilities, applications, merits, and shortcomings. After summarizing the approaches of growing single molecules or molecular layers on the electrodes, the methods of constructing a complete molecular circuit are comprehensively grouped into three categories: 1) directly bridging one-molecule-electrode component with another electrode, 2) physically bridging two-molecule-electrode components, and 3) chemically bridging two-molecule-electrode components. Finally, the current state of molecular circuit integration and commercialization is discussed and perspectives are provided, hoping to encourage the community to accelerate the realization of fully scalable molecular electronics for a new era of integrated microsystems and applications.
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Affiliation(s)
- Tianming Li
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09111, Chemnitz, Germany
| | - Vineeth Kumar Bandari
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09111, Chemnitz, Germany
| | - Oliver G Schmidt
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09111, Chemnitz, Germany
- Nanophysics, Dresden University of Technology, 01069, Dresden, Germany
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6
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Merces L, Candiotto G, Ferro LMM, de Barros A, Batista CVS, Nawaz A, Riul A, Capaz RB, Bufon CCB. Reorganization Energy upon Controlled Intermolecular Charge-Transfer Reactions in Monolithically Integrated Nanodevices. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2103897. [PMID: 34596956 DOI: 10.1002/smll.202103897] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/04/2021] [Revised: 08/29/2021] [Indexed: 06/13/2023]
Abstract
Intermolecular electron-transfer reactions are key processes in physics, chemistry, and biology. The electron-transfer rates depend primarily on the system reorganization energy, that is, the energetic cost to rearrange each reactant and its surrounding environment when a charge is transferred. Despite the evident impact of electron-transfer reactions on charge-carrier hopping, well-controlled electronic transport measurements using monolithically integrated electrochemical devices have not successfully measured the reorganization energies to this date. Here, it is shown that self-rolling nanomembrane devices with strain-engineered mechanical properties, on-a-chip monolithic integration, and multi-environment operation features can overcome this challenge. The ongoing advances in nanomembrane-origami technology allow to manufacture the nCap, a nanocapacitor platform, to perform molecular-level charge transport characterization. Thereby, employing nCap, the copper-phthalocyanine (CuPc) reorganization energy is probed, ≈0.93 eV, from temperature-dependent measurements of CuPc nanometer-thick films. Supporting the experimental findings, density functional theory calculations provide the atomistic picture of the measured CuPc charge-transfer reaction. The experimental strategy demonstrated here is a consistent route towards determining the reorganization energy of a system formed by molecules monolithically integrated into electrochemical nanodevices.
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Affiliation(s)
- Leandro Merces
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, SP, 13083-100, Brazil
| | - Graziâni Candiotto
- Instituto de Física, Universidade Federal do Rio de Janeiro, Rio de Janeiro, RJ, 21941-972, Brazil
- Instituto de Química, Universidade Federal do Rio de Janeiro, Rio de Janeiro, RJ, 21941-909, Brazil
| | - Letícia Mariê Minatogau Ferro
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, SP, 13083-100, Brazil
- Institute of Chemistry, University of Campinas, Campinas, SP, 13083-970, Brazil
| | - Anerise de Barros
- Institute of Chemistry, University of Campinas, Campinas, SP, 13083-970, Brazil
| | - Carlos Vinícius Santos Batista
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, SP, 13083-100, Brazil
- Postgraduate Program in Materials Science and Technology, São Paulo State University, Bauru, SP, 17033-360, Brazil
| | - Ali Nawaz
- Center for Sensors and Devices, Bruno Kessler Foundation (FBK), Trento, 38123, Italy
| | - Antonio Riul
- Department of Applied Physics, "Gleb Wataghin" Institute of Physics, University of Campinas, Campinas, SP, 13083-859, Brazil
| | - Rodrigo B Capaz
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, SP, 13083-100, Brazil
- Instituto de Física, Universidade Federal do Rio de Janeiro, Rio de Janeiro, RJ, 21941-972, Brazil
| | - Carlos César Bof Bufon
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, SP, 13083-100, Brazil
- Institute of Chemistry, University of Campinas, Campinas, SP, 13083-970, Brazil
- Postgraduate Program in Materials Science and Technology, São Paulo State University, Bauru, SP, 17033-360, Brazil
- Mackenzie Presbyterian University, São Paulo, 01302-907, Brazil
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7
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Ferro LMM, Merces L, de Camargo DHS, Bof Bufon CC. Ultrahigh-Gain Organic Electrochemical Transistor Chemosensors Based on Self-Curled Nanomembranes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2101518. [PMID: 34061409 DOI: 10.1002/adma.202101518] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/23/2021] [Revised: 03/31/2021] [Indexed: 06/12/2023]
Abstract
Organic electrochemical transistors (OECTs) are technologically relevant devices presenting high susceptibility to physical stimulus, chemical functionalization, and shape changes-jointly to versatility and low production costs. The OECT capability of liquid-gating addresses both electrochemical sensing and signal amplification within a single integrated device unit. However, given the organic semiconductor time-consuming doping process and their usual low field-effect mobility, OECTs are frequently considered low-end category devices. Toward high-performance OECTs, microtubular electrochemical devices based on strain-engineering are presented here by taking advantage of the exclusive shape features of self-curled nanomembranes. Such novel OECTs outperform the state-of-the-art organic liquid-gated transistors, reaching lower operating voltage, improved ion doping, and a signal amplification with a >104 intrinsic gain. The multipurpose OECT concept is validated with different electrolytes and distinct nanometer-thick molecular films, namely, phthalocyanine and thiophene derivatives. The OECTs are also applied as transducers to detect a biomarker related to neurological diseases, the neurotransmitter dopamine. The self-curled OECTs update the premises of electrochemical energy conversion in liquid-gated transistors, yielding a substantial performance improvement and new chemical sensing capabilities within picoliter sampling volumes.
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Affiliation(s)
- Letícia M M Ferro
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Giuseppe Máximo Scolfaro 10000, Polo II de Alta Tecnologia, Campinas, 13083-100, Brazil
- Institute of Chemistry (IQ), University of Campinas (UNICAMP), Cidade Universitária "Zeferino Vaz", Campinas, 13083-970, Brazil
| | - Leandro Merces
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Giuseppe Máximo Scolfaro 10000, Polo II de Alta Tecnologia, Campinas, 13083-100, Brazil
| | - Davi H S de Camargo
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Giuseppe Máximo Scolfaro 10000, Polo II de Alta Tecnologia, Campinas, 13083-100, Brazil
| | - Carlos C Bof Bufon
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Giuseppe Máximo Scolfaro 10000, Polo II de Alta Tecnologia, Campinas, 13083-100, Brazil
- Institute of Chemistry (IQ), University of Campinas (UNICAMP), Cidade Universitária "Zeferino Vaz", Campinas, 13083-970, Brazil
- Postgraduate Program in Materials Science and Technology (POSMAT), São Paulo State University (UNESP), Bauru, São Paulo, 17033-360, Brazil
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8
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Silva RML, Merces L, Bof Bufon CC. Temperature-Independent Polarization of Ultrathin Phthalocyanine-Based Hybrid Organic/Inorganic Heterojunctions. ACS APPLIED MATERIALS & INTERFACES 2020; 12:29556-29565. [PMID: 32447957 DOI: 10.1021/acsami.0c02067] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The combination of organic and inorganic materials at the nanoscale to form functional hybrid structures is a powerful strategy to develop novel electronic devices. The knowledge on semiconductor thin-film polarization brings direct benefits to the hybrid organic/inorganic electronics, becoming primordial for the development of devices such as electromechanical logic gates, solar cells, miniaturized valves, organic diodes, and molecular supercapacitors, among others. Here, we report on the dielectric polarization of ultrathin organic semiconducting films-ca. 5 nm thick metal phthalocyanine ensembles (viz., CuPc, CoPc, F16CuPc)-employed to build up hybrid metal/oxide/molecule heterojunctions. Such hybrid heterostructures are fully integrated into self-rolled nanomembrane-based capacitors and further investigated by impedance spectroscopy measurements as a function of temperature (from 6 to 300 K). The dielectric polarization of the metal phthalocyanines is found to be thermally activated above a specific threshold temperature, which depends on the molecular structure. Below this threshold, the current leakage across the system is suppressed, thus evidencing intrinsic-like polarization mechanisms. The temperature-independent permittivities of the ultrathin molecular films are found to be strongly dependent on the organic/inorganic hybrid interfaces, while the calculated relaxation times are more likely related to each single-molecule polarization. Beyond the advances in determining the temperature dependence of the permittivity for ultrathin phthalocyanine films integrated within solid-state electronics, our results also support the deterministic design of novel functional devices based on nanoscale hybrid organic/inorganic heterojunctions.
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Affiliation(s)
- Ricardo M L Silva
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), 13083-970 Campinas, São Paulo, Brazil
- Postgraduate Program in Materials Science and Technology (POSMAT), São Paulo State University (UNESP), 17033-360 Bauru, São Paulo, Brazil
| | - Leandro Merces
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), 13083-970 Campinas, São Paulo, Brazil
| | - Carlos C Bof Bufon
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), 13083-970 Campinas, São Paulo, Brazil
- Postgraduate Program in Materials Science and Technology (POSMAT), São Paulo State University (UNESP), 17033-360 Bauru, São Paulo, Brazil
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9
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Sergi Lopes C, Merces L, de Oliveira RF, de Camargo DHS, Bof Bufon CC. Rectification ratio and direction controlled by temperature in copper phthalocyanine ensemble molecular diodes. NANOSCALE 2020; 12:10001-10009. [PMID: 32196026 DOI: 10.1039/c9nr10601d] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Organic diodes and molecular rectifiers are fundamental electronic devices that share one common feature: current rectification ability. Since both present distinct spatial dimensions and working principles, the rectification of organic diodes is usually achieved by interface engineering, while changes in molecular structures commonly control the molecular rectifiers' features. Here, we report on the first observation of temperature-driven inversion of the rectification direction (IRD) in ensemble molecular diodes (EMDs) prepared in a vertical stack configuration. The EMDs are composed of 20 nm thick molecular ensembles of copper phthalocyanine in close contact with one of its fluorinated derivatives. The material interface was found to be responsible for modifying the junction's conduction mechanisms from nearly activationless transport to Poole-Frenkel emission and phonon-assisted tunneling. In this context, the current rectification was found to be dependent on the interplay of such distinct charge transport mechanisms. The temperature has played a crucial role in each charge transport transition, which we have investigated via electrical measurements and band diagram analysis, thus providing the fundamentals on the IRD occurrence. Our findings represent an important step towards simple and rational control of rectification in carbon-based electronic nanodevices.
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Affiliation(s)
- Carolina Sergi Lopes
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), 13083-970, Campinas, São Paulo, Brazil
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10
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Albano LGS, Vello TP, de Camargo DHS, da Silva RML, Padilha ACM, Fazzio A, Bufon CCB. Ambipolar Resistive Switching in an Ultrathin Surface-Supported Metal-Organic Framework Vertical Heterojunction. NANO LETTERS 2020; 20:1080-1088. [PMID: 31917590 DOI: 10.1021/acs.nanolett.9b04355] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Memristors (MRs) are considered promising devices with the enormous potential to replace complementary metal-oxide-semiconductor (CMOS) technology, which approaches the scale limit. Efforts to fabricate MRs-based hybrid materials may result in suitable operating parameters coupled to high mechanical flexibility and low cost. Metal-organic frameworks (MOFs) arise as a favorable candidate to cover such demands. The step-by-step growth of MOFs structures on functionalized surfaces, called surface-supported metal-organic frameworks (SURMOFs), opens the possibility for designing new applications in strategic fields such as electronics, optoelectronics, and energy harvesting. However, considering the MRs architecture, the typical high porosity of these hybrid materials may lead to short-circuited devices easily. In this sense, here, it is reported for the first time the integration of SURMOF films in rolled-up scalable-functional devices. A freestanding metallic nanomembrane provides a robust and self-adjusted top mechanical contact on the SURMOF layer. The electrical characterization reveals an ambipolar resistive switching mediated by the humidity level with low-power consumption. The electronic properties are investigated with density functional theory (DFT) calculations. Furthermore, the device concept is versatile, compatible with the current parallelism demands of integration, and transcends the challenge in contacting SURMOF films for scalable-functional devices.
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Affiliation(s)
- Luiz G S Albano
- Brazilian Nanotechnology National Laboratory (LNNano) , Brazilian Center for Research in Energy and Materials (CNPEM) , 13083-970 Campinas , São Paulo , Brazil
| | - Tatiana P Vello
- Brazilian Nanotechnology National Laboratory (LNNano) , Brazilian Center for Research in Energy and Materials (CNPEM) , 13083-970 Campinas , São Paulo , Brazil
- Department of Physical Chemistry, Institute of Chemistry (IQ) , University of Campinas (UNICAMP) , 13084-862 Campinas , São Paulo , Brazil
| | - Davi H S de Camargo
- Brazilian Nanotechnology National Laboratory (LNNano) , Brazilian Center for Research in Energy and Materials (CNPEM) , 13083-970 Campinas , São Paulo , Brazil
- Postgraduate Program in Materials Science and Technology (POSMAT) , São Paulo State University (UNESP) , 17033-360 Bauru , São Paulo , Brazil
| | - Ricardo M L da Silva
- Brazilian Nanotechnology National Laboratory (LNNano) , Brazilian Center for Research in Energy and Materials (CNPEM) , 13083-970 Campinas , São Paulo , Brazil
- Postgraduate Program in Materials Science and Technology (POSMAT) , São Paulo State University (UNESP) , 17033-360 Bauru , São Paulo , Brazil
| | - Antonio C M Padilha
- Brazilian Nanotechnology National Laboratory (LNNano) , Brazilian Center for Research in Energy and Materials (CNPEM) , 13083-970 Campinas , São Paulo , Brazil
| | - Adalberto Fazzio
- Brazilian Nanotechnology National Laboratory (LNNano) , Brazilian Center for Research in Energy and Materials (CNPEM) , 13083-970 Campinas , São Paulo , Brazil
| | - Carlos C B Bufon
- Brazilian Nanotechnology National Laboratory (LNNano) , Brazilian Center for Research in Energy and Materials (CNPEM) , 13083-970 Campinas , São Paulo , Brazil
- Department of Physical Chemistry, Institute of Chemistry (IQ) , University of Campinas (UNICAMP) , 13084-862 Campinas , São Paulo , Brazil
- Postgraduate Program in Materials Science and Technology (POSMAT) , São Paulo State University (UNESP) , 17033-360 Bauru , São Paulo , Brazil
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11
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Edge-driven nanomembrane-based vertical organic transistors showing a multi-sensing capability. Nat Commun 2020; 11:841. [PMID: 32051411 PMCID: PMC7016126 DOI: 10.1038/s41467-020-14661-x] [Citation(s) in RCA: 26] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/08/2019] [Accepted: 01/24/2020] [Indexed: 11/13/2022] Open
Abstract
The effective utilization of vertical organic transistors in high current density applications demands further reduction of channel length (given by the thickness of the organic semiconducting layer and typically reported in the 100 nm range) along with the optimization of the source electrode structure. Here we present a viable solution by applying rolled-up metallic nanomembranes as the drain-electrode (which enables the incorporation of few nanometer-thick semiconductor layers) and by lithographically patterning the source-electrode. Our vertical organic transistors operate at ultra-low voltages and demonstrate high current densities (~0.5 A cm−2) that are found to depend directly on the number of source edges, provided the source perforation gap is wider than 250 nm. We anticipate that further optimization of device structure can yield higher current densities (~10 A cm−2). The use of rolled-up drain-electrode also enables sensing of humidity and light which highlights the potential of these devices to advance next-generation sensing technologies. For vertical organic field-effect transistors (VOFETs) to reach their potential for display and sensor applications, further improvements to fabrication methods are required. Here, the authors report microfabricated VOFETs featuring rolled-up metallic nanomembrane electrodes and displaying multi-sensing capability.
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Ma F, Xu B, Wu S, Wang L, Zhang B, Huang G, Du A, Zhou B, Mei Y. Thermal-controlled releasing and assembling of functional nanomembranes through polymer pyrolysis. NANOTECHNOLOGY 2019; 30:354001. [PMID: 31035266 DOI: 10.1088/1361-6528/ab1dcc] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Pyrolysis, which involves thermal decomposition of materials at elevated temperatures, has been commonly applied in the chemical industry. Here we explored the pyrolysis process for 3D nanofabrication. By strain engineering of nanomembranes on a thermal responsive polymer as the sacrificial layer, we demonstrated that diverse 3D rolled-up microstructures with different functions could be achieved without any additional solution and drying process. We carefully studied the effect of molecular weight of the polymer in the pyrolysis process and identified that the rapid breakdown of molecular backbone to a monomer is the key for nanomembrane releasing and rolling. Preferential rolling direction and corresponding dynamics were studied by analyzing the real-time video of the rolling process. We further demonstrated the versatile functions of the fabricated 3D structures as catalytic microengines and optical resonators. The simple fabrication methodology developed here may have great potential in producing functional 3D tubular micro-/nanostructures.
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Affiliation(s)
- Fei Ma
- Department of Materials Science, Fudan University, Shanghai 200433, People's Republic of China
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