High-Performance On-Chip Supercapacitors Based on Mesoporous Silicon Coated with Ultrathin Atomic Layer-Deposited In2O3 Films

Improved TEA Sensitivity and Selectivity of In2O3 Porous Nanospheres by Modification with Ag Nanoparticles

A highly sensitive and selective detection of volatile organic compounds (VOCs) by using gas sensors based on metal oxide semiconductor (MOS) has attracted increasing interest, but still remains a challenge in gas sensitivity and selectivity. In order to improve the sensitivity and selectivity of In2O3 to triethylamine (TEA), herein, a silver (Ag)-modification strategy is proposed. Ag nanoparticles with a size around 25–30 nm were modified on pre-synthesized In2O3 PNSs via a simple room-temperature chemical reduction method by using NaBH4 as a reductant. The results of gas sensing tests indicate that after functionalization with Ag, the gas sensing performance of In2O3 PNSs for VOCs, especially for TEA, was remarkably improved. At a lower optimal working temperature (OWT) of 300 °C (bare In2O3 sensor: 320 °C), the best Ag/In2O3-2 sensor (Ag/In2O3 PNSs with an optimized Ag content of 2.90 wt%) shows a sensitivity of 116.86/ppm to 1–50 ppm TEA, about 170 times higher than that of bare In2O3 sensor (0.69/ppm). Significantly, the Ag/In2O3-2 sensor can provide a response (Ra/Rg) as high as 5697 to 50 ppm TEA, which is superior to most previous TEA sensors. Besides lower OWT and higher sensitivity, the Ag/In2O3-2 sensor also shows a remarkably improved selectivity to TEA, whose selectivity coefficient (STEA/Sethanol) is as high as 5.30, about 3.3 times higher than that of bare In2O3 (1.59). The sensitization mechanism of Ag on In2O3 is discussed in detail.

Advances in Si and SiC Materials for High-Performance Supercapacitors toward Integrated Energy Storage Systems

Silicon (Si), as the second most abundant element on Earth, has been a central platform of modern electronics owing to its low mass density and unique semiconductor properties. From an energy perspective, all-in-one integration of power supply systems onto Si-based functional devices is highly desirable, which inspires significant study on Si-based energy storage. Compared to the well-known Si-anode Li-ion batteries, Si-based supercapacitors possess high power density, long life, and simple working mechanisms, which enables their ease of integration onto a wide range of devices and applications. Besides Si, silicon carbide (SiC), as a physicochemically stable wide-bandgap semiconductor, also attracts research attention as an energy storage material in harsh environments. In this review, a detailed overview of latest advances in materials design, synthesis methods, and performances of Si-based and SiC-based supercapacitors will be provided. Some successful integrated devices, future perspectives, and potential research directions are also highlighted and discussed.

Directly grown two dimensional In2S3 nanoflakes via one-step solvothermal method: Material properties on In2S3 and performance data for supercapacitors

Herein, the material structural properties such as phase, morphology, chemical composition, and surface area for In₂S₃ nanoflakes, synthesized by a one-step solvothermal method, are studied [1]. The comparative electrochemical performance data of indium based electrode material is presented to establish the practical suitability of prepared In₂S₃ electrode material. Device demonstration of fabricated solid-state supercapacitor device on different time frames set performance level demonstration of current work and suggest a potential candidate for next-generation energy storage electrode material.