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Jiang H, Wang T, Zhang Z, Liu F, Shi R, Sheng B, Sheng S, Ge W, Wang P, Shen B, Sun B, Gao P, Lindsay L, Wang X. Atomic-scale visualization of defect-induced localized vibrations in GaN. Nat Commun 2024; 15:9052. [PMID: 39426978 PMCID: PMC11490645 DOI: 10.1038/s41467-024-53394-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/20/2024] [Accepted: 10/11/2024] [Indexed: 10/21/2024] Open
Abstract
Phonon engineering is crucial for thermal management in GaN-based power devices, where phonon-defect interactions limit performance. However, detecting nanoscale phonon transport constrained by III-nitride defects is challenging due to limited spatial resolution. Here, we used advanced scanning transmission electron microscopy and electron energy loss spectroscopy to examine vibrational modes in a prismatic stacking fault in GaN. By comparing experimental results with ab initio calculations, we identified three types of defect-derived modes: localized defect modes, a confined bulk mode, and a fully extended mode. Additionally, the PSF exhibits a smaller phonon energy gap and lower acoustic sound speeds than defect-free GaN, suggesting reduced thermal conductivity. Our study elucidates the vibrational behavior of a GaN defect via advanced characterization methods and highlights properties that may affect thermal behavior.
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Affiliation(s)
- Hailing Jiang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Tao Wang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China.
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, China.
| | - Zhenyu Zhang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Fang Liu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Ruochen Shi
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, China
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Bowen Sheng
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Shanshan Sheng
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Weikun Ge
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Ping Wang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Bo Shen
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Bo Sun
- Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen, 518055, China
| | - Peng Gao
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, China
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Lucas Lindsay
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.
| | - Xinqiang Wang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China.
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Lund F, Scheihing-Hitschfeld B. The Scattering of Phonons by Infinitely Long Quantum Dislocations Segments and the Generation of Thermal Transport Anisotropy in a Solid Threaded by Many Parallel Dislocations. NANOMATERIALS 2020; 10:nano10091711. [PMID: 32872530 PMCID: PMC7558908 DOI: 10.3390/nano10091711] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/28/2020] [Revised: 08/16/2020] [Accepted: 08/24/2020] [Indexed: 11/16/2022]
Abstract
A canonical quantization procedure is applied to the interaction of elastic waves—phonons—with infinitely long dislocations that can oscillate about an equilibrium, straight line, configuration. The interaction is implemented through the well-known Peach–Koehler force. For small dislocation excursions away from the equilibrium position, the quantum theory can be solved to all orders in the coupling constant. We study in detail the quantum excitations of the dislocation line and its interactions with phonons. The consequences for the drag on a dislocation caused by the phonon wind are pointed out. We compute the cross-section for phonons incident on the dislocation lines for an arbitrary angle of incidence. The consequences for thermal transport are explored, and we compare our results, involving a dynamic dislocation, with those of Klemens and Carruthers, involving a static dislocation. In our case, the relaxation time is inversely proportional to frequency, rather than directly proportional to frequency. As a consequence, the thermal transport anisotropy generated on a material by the presence of a highly-oriented array of dislocations is considerably more sensitive to the frequency of each propagating mode, and, therefore, to the temperature of the material.
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Affiliation(s)
- Fernando Lund
- Departamento de Física, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Santiago 8370449, Chile;
- CIMAT, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Santiago 8370449, Chile
- Correspondence:
| | - Bruno Scheihing-Hitschfeld
- Departamento de Física, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Santiago 8370449, Chile;
- Center for Theoretical Physics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
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Gupta R, Dongre B, Bera C, Carrete J. The Effect of Janus Asymmetry on Thermal Transport in SnSSe. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2020; 124:17476-17484. [PMID: 32904867 PMCID: PMC7461144 DOI: 10.1021/acs.jpcc.0c03414] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/17/2020] [Revised: 06/28/2020] [Indexed: 06/11/2023]
Abstract
Several ternary "Janus" metal dichalcogenides such as {Mo,Zr,Pt}-SSe have emerged as candidates with significant potential for optoelectronic, piezoelectric, and thermoelectric applications. SnSSe, a natural option to explore as a thermoelectric given that its "parent" structures are SnS2 and SnSe2 has, however, only recently been shown to be mechanically stable. Here, we calculate the lattice thermal conductivities of the Janus SnSSe monolayer along with those of its parent dicalchogenides. The phonon frequencies of SnSSe are intermediate between those of SnSe2 and SnS2; however, its thermal conductivity is the lowest of the three and even lower than that of a random Sn[S0.5Se0.5]2 alloy. This can be attributed to the breakdown of inversion symmetry and manifests as a subtle effect beyond the reach of the relaxation-time approximation. Together with its low favorable power factor, its thermal conductivity confirms SnSSe as a good candidate for thermoelectric applications.
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Affiliation(s)
- Raveena Gupta
- Institute
of Nano Science and Technology, Habitat
Center, Phase-X, Mohali, Punjab 160062, India
- Centre
for Nanoscience and Nanotechnology, Panjab
University, Sector-25, Chandigarh 160036, India
| | - Bonny Dongre
- Institute
of Materials Chemistry, TU Wien, Vienna A-1060, Austria
| | - Chandan Bera
- Institute
of Nano Science and Technology, Habitat
Center, Phase-X, Mohali, Punjab 160062, India
| | - Jesús Carrete
- Institute
of Materials Chemistry, TU Wien, Vienna A-1060, Austria
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Carrete J, López-Suárez M, Raya-Moreno M, Bochkarev AS, Royo M, Madsen GKH, Cartoixà X, Mingo N, Rurali R. Phonon transport across crystal-phase interfaces and twin boundaries in semiconducting nanowires. NANOSCALE 2019; 11:16007-16016. [PMID: 31424472 DOI: 10.1039/c9nr05274g] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We combine state-of-the-art Green's-function methods and nonequilibrium molecular dynamics calculations to study phonon transport across the unconventional interfaces that make up crystal-phase and twinning superlattices in nanowires. We focus on two of their most paradigmatic building blocks: cubic (diamond/zinc blende) and hexagonal (lonsdaleite/wurtzite) polytypes of the same group-IV or III-V material. Specifically, we consider InP, GaP and Si, and both the twin boundaries between rotated cubic segments and the crystal-phase boundaries between different phases. We reveal the atomic-scale mechanisms that give rise to phonon scattering in these interfaces, quantify their thermal boundary resistance and illustrate the failure of common phenomenological models in predicting those features. In particular, we show that twin boundaries have a small but finite interface thermal resistance that can only be understood in terms of a fully atomistic picture.
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Affiliation(s)
- Jesús Carrete
- Institute of Materials Chemistry, TU Wien, A-1060 Vienna, Austria
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