1
|
Yuvaraja S, Khandelwal V, Krishna S, Lu Y, Liu Z, Kumar M, Tang X, Maciel García GI, Chettri D, Liao CH, Li X. Enhancement-Mode Ambipolar Thin-Film Transistors and CMOS Logic Circuits using Bilayer Ga 2O 3/NiO Semiconductors. ACS APPLIED MATERIALS & INTERFACES 2024; 16:6088-6097. [PMID: 38278516 PMCID: PMC10859899 DOI: 10.1021/acsami.3c15778] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/21/2023] [Revised: 11/20/2023] [Accepted: 12/04/2023] [Indexed: 01/28/2024]
Abstract
Recent advancements in power electronics have been driven by Ga2O3-based ultrawide bandgap (UWBG) semiconductor devices, enabling efficient high-current switching. However, integrating Ga2O3 power devices with essential silicon CMOS logic circuits for advanced control poses fabrication challenges. Researchers have introduced Ga2O3-based NMOS and pseudo-CMOS circuits for integration, but these circuits may either consume more power or increase the design complexity. Hence, this article proposes Ga2O3-based CMOS realized using heterogeneous 3D-stacked bilayer ambipolar transistors. These ambipolar transistors consist of HfO2/NiO/Ga2O3/NiO/HfO2 heterostructures that are wrapped around by the Ti/Au gate electrode, resulting in record high electron and hole current on/off ratios of 109 and 107. The threshold voltage, subthreshold swing, and current density measured from 100 ambipolar devices (across 5 batches) are around -7.99 ± 0.92 V (p-channel) and 7.81 ± 0.81 V (n-channel), 0.59 ± 0.07 V/dec (p-channel) and 0.61 ± 0.06 V/dec (n-channel), and 0.99 ± 0.26 mA/mm (p-channel) and 58.23 ± 12.99 mA/mm (n-channel), respectively. All the 100 ambipolar devices showed decent long-term stability over a period of 200 days, exhibiting reliable electrical performance. The threshold voltage shift (ΔVTH) after negative bias stressing for a period of 3500 s is around 11.52 V (p-channel) and 10.21 V (n-channel), respectively. Notably, the n-channels exhibit ∼2 orders higher on/off ratio than the best Ga2O3 unipolar transistors at 300 °C. Moreover, the polarities of ambipolar transistors are reconfigurable into p- or n-MOS, which are integrated to demonstrate CMOS inverter, NOR, and NAND logic gates. The switching periods from "0" to "1" and from "1" to "0" of NOR are 0.12 and 0.17 μs, and those of NAND are 0.16 and 0.13 μs. This work lays the foundation of oxide-semiconductor-based CMOS for future integrated electronics.
Collapse
Affiliation(s)
- Saravanan Yuvaraja
- Advanced Semiconductor Laboratory,
Electrical and Computer Engineering Program, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Vishal Khandelwal
- Advanced Semiconductor Laboratory,
Electrical and Computer Engineering Program, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Shibin Krishna
- Advanced Semiconductor Laboratory,
Electrical and Computer Engineering Program, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Yi Lu
- Advanced Semiconductor Laboratory,
Electrical and Computer Engineering Program, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Zhiyuan Liu
- Advanced Semiconductor Laboratory,
Electrical and Computer Engineering Program, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Mritunjay Kumar
- Advanced Semiconductor Laboratory,
Electrical and Computer Engineering Program, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Xiao Tang
- Advanced Semiconductor Laboratory,
Electrical and Computer Engineering Program, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Glen Isaac Maciel García
- Advanced Semiconductor Laboratory,
Electrical and Computer Engineering Program, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Dhanu Chettri
- Advanced Semiconductor Laboratory,
Electrical and Computer Engineering Program, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Che-Hao Liao
- Advanced Semiconductor Laboratory,
Electrical and Computer Engineering Program, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Xiaohang Li
- Advanced Semiconductor Laboratory,
Electrical and Computer Engineering Program, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
| |
Collapse
|
2
|
Matsuzaki K, Tsunoda N, Kumagai Y, Tang Y, Nomura K, Oba F, Hosono H. Hole-Doping to a Cu(I)-Based Semiconductor with an Isovalent Cation: Utilizing a Complex Defect as a Shallow Acceptor. J Am Chem Soc 2022; 144:16572-16578. [PMID: 36049089 DOI: 10.1021/jacs.2c06283] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
p-Type doping in Cu(I)-based semiconductors is pivotal for solar cell photoabsorbers and hole transport materials to improve the device performance. Impurity doping is a fundamental technology to overcome the intrinsic limits of hole concentration controlled by native defects. Here, we report that alkali metal impurities are prominent p-type dopants for the Cu(I)-based cation-deficient hole conductors. When the size mismatch with Cu+ in the host lattice is increased, these isovalent impurities are preferentially located at interstitial positions to interact with the constituent Cu cations, forming stable impurity-defect complexes. We demonstrate that the Cs impurity in γ-CuI semiconductors enhances hole concentration controllability for single crystals and thin films in the range of 1013-1019 cm-3. First-principles calculations indicate that the Cs impurity forms impurity-defect complexes that act as shallow acceptors leading to the increased p-type conductivity. This isovalent doping provides an approach for controlled doping into cation-deficient semiconductors through an interaction of impurities with native defects.
Collapse
Affiliation(s)
- Kosuke Matsuzaki
- Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan
| | - Naoki Tsunoda
- Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan
| | - Yu Kumagai
- Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan
| | - Yalun Tang
- Department of Electrical and Computer Engineering, Jacobs School of Engineering, University of California San Diego, 9500 Gilman Dr., La Jolla, California 92093, United States
| | - Kenji Nomura
- Department of Electrical and Computer Engineering, Jacobs School of Engineering, University of California San Diego, 9500 Gilman Dr., La Jolla, California 92093, United States.,Materials Science and Engineering Program, Jacobs School of Engineering, University of California San Diego, 9500 Gilman Dr., La Jolla, California 92093, United States
| | - Fumiyasu Oba
- Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan.,Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan
| | - Hideo Hosono
- Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan.,National Institute for Materials Science (NIMS) 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| |
Collapse
|
4
|
Ścigała A, Szłyk E, Dobrzańska L, Gregory DH, Szczęsny R. From binary to multinary copper based nitrides – Unlocking the potential of new applications. Coord Chem Rev 2021. [DOI: 10.1016/j.ccr.2021.213791] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/01/2022]
|