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Hazra N, Gayen K, Ghosh P, Hansda B, Banerjee A. Stabilization of a Photoradiated Naphthalene Diimide-Based Organic Radical Anion Inside a Peptide-Based Gel Matrix with an Improvement of Optoelectronic Properties. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2024; 40:9462-9470. [PMID: 38652709 DOI: 10.1021/acs.langmuir.3c03947] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/25/2024]
Abstract
An amino acid-conjugated naphthalene diimide (NDI)-based highly red fluorescent radical anion has been found in a water medium under the photoradiated condition. This molecule has failed to form the radical anion in the monomeric state; however, the J aggregation in the aqueous medium has ensured the formation of radical anion in the ambient condition after the irradiation of both sunlight and UV light exposure. Electron paramagnetic resonance (EPR) studies clearly suggest the formation of radical anions. Herein, the stability of the radical anion in the aqueous medium is only a few minutes as a small amount of shaking is enough to quench the radical anion in the solution state. Furthermore, the incorporation of this molecule into a peptide-based hydrogel matrix and the consequent photoirradiation have not only helped to develop radical anion in the gel matrix but also increased the enormous stability of the radical anion inside the hydrogel matrix even for 30 days. It is envisaged that the formation of the radical anion within the gel matrix prevents the free movement of the NDI molecules and restricts the diffusion of molecular oxygen in the system, which leads to the stability of the radical anions in the gel. Moreover, the stability of the radical anion within the gel has helped to enhance the conductivity of the hybrid gel to a great extent. Interestingly, the radical anion-containing hybrid hydrogel has shown a potential photoswitching property.
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Affiliation(s)
- Niladri Hazra
- School of Biological Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700 032, India
| | - Kousik Gayen
- School of Biological Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700 032, India
| | - Purnadas Ghosh
- School of Biological Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700 032, India
| | - Biswanath Hansda
- School of Biological Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700 032, India
| | - Arindam Banerjee
- School of Biological Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700 032, India
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Lu B, Stolte M, Liu D, Zhang X, Zhao L, Tian L, Frisbie CD, Würthner F, Tao X, He T. High Sensitivity and Ultra-Broad-Range NH 3 Sensor Arrays by Precise Control of Step Defects on The Surface of Cl 2-Ndi Single Crystals. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2308036. [PMID: 38308194 PMCID: PMC11005746 DOI: 10.1002/advs.202308036] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/24/2023] [Revised: 01/02/2024] [Indexed: 02/04/2024]
Abstract
Vapor sensors with both high sensitivity and broad detection range are technically challenging yet highly desirable for widespread chemical sensing applications in diverse environments. Generally, an increased surface-to-volume ratio can effectively enhance the sensitivity to low concentrations, but often with the trade-off of a constrained sensing range. Here, an approach is demonstrated for NH3 sensor arrays with an unprecedentedly broad sensing range by introducing controllable steps on the surface of an n-type single crystal. Step edges, serving as adsorption sites with electron-deficient properties, are well-defined, discrete, and electronically active. NH3 molecules selectively adsorb at the step edges and nearly eliminate known trap-like character, which is demonstrated by surface potential imaging. Consequently, the strategy can significantly boost the sensitivity of two-terminal NH3 resistance sensors on thin crystals with a few steps while simultaneously enhancing the tolerance on thick crystals with dense steps. Incorporation of these crystals into parallel sensor arrays results in ppb-to-% level detection range and a convenient linear relation between sheet conductance and semi-log NH3 concentration, allowing for the precise localization of vapor leakage. In general, the results suggest new opportunities for defect engineering of organic semiconductor crystal surfaces for purposeful vapor or chemical sensing.
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Affiliation(s)
- Bin Lu
- State Key Laboratory of Crystal Materials and Institute of Crystal MaterialsShandong UniversityJinan250100China
| | - Matthias Stolte
- Universität WürzburgInstitut für Organische Chemie & Center for Nanosystems ChemistryAm Hubland97074WürzburgGermany
| | - Dong Liu
- State Key Laboratory of Crystal Materials and Institute of Crystal MaterialsShandong UniversityJinan250100China
| | - Xiaojing Zhang
- State Key Laboratory of Crystal Materials and Institute of Crystal MaterialsShandong UniversityJinan250100China
| | - Lihui Zhao
- State Key Laboratory of Crystal Materials and Institute of Crystal MaterialsShandong UniversityJinan250100China
| | - Liehao Tian
- State Key Laboratory of Crystal Materials and Institute of Crystal MaterialsShandong UniversityJinan250100China
| | - C. Daniel Frisbie
- Department of Chemical Engineering and Materials ScienceUniversity of MinnesotaMinneapolisMinnesota55455USA
| | - Frank Würthner
- Universität WürzburgInstitut für Organische Chemie & Center for Nanosystems ChemistryAm Hubland97074WürzburgGermany
| | - Xutang Tao
- State Key Laboratory of Crystal Materials and Institute of Crystal MaterialsShandong UniversityJinan250100China
| | - Tao He
- State Key Laboratory of Crystal Materials and Institute of Crystal MaterialsShandong UniversityJinan250100China
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Shen Z, Huang W, Li L, Li H, Huang J, Cheng J, Fu Y. Research Progress of Organic Field-Effect Transistor Based Chemical Sensors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2302406. [PMID: 37271887 DOI: 10.1002/smll.202302406] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/21/2023] [Revised: 05/11/2023] [Indexed: 06/06/2023]
Abstract
Due to their high sensitivity and selectivity, chemical sensors have gained significant attention in various fields, including drug security, environmental testing, food safety, and biological medicine. Among them, organic field-effect transistor (OFET) based chemical sensors have emerged as a promising alternative to traditional sensors, exhibiting several advantages such as multi-parameter detection, room temperature operation, miniaturization, flexibility, and portability. This review paper presents recent research progress on OFET-based chemical sensors, highlighting the enhancement of sensor performance, including sensitivity, selectivity, stability, etc. The main improvement programs are improving the internal and external structures of the device, as well as the organic semiconductor layer and dielectric structure. Finally, an outlook on the prospects and challenges of OFET-based chemical sensors is presented.
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Affiliation(s)
- Zhengqi Shen
- State Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Wei Huang
- School of Automation Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, Sichuan, 611731, China
| | - Li Li
- Interdisciplinary Materials Research Center School of Materials Science and Engineering, Tongji University, Shanghai, 201804, China
| | - Huizi Li
- State Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jia Huang
- Interdisciplinary Materials Research Center School of Materials Science and Engineering, Tongji University, Shanghai, 201804, China
| | - Jiangong Cheng
- State Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yanyan Fu
- State Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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Chen J, Zhang W, Wang L, Yu G. Recent Research Progress of Organic Small-Molecule Semiconductors with High Electron Mobilities. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2210772. [PMID: 36519670 DOI: 10.1002/adma.202210772] [Citation(s) in RCA: 16] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/19/2022] [Revised: 12/13/2022] [Indexed: 06/17/2023]
Abstract
Organic electronics has made great progress in the past decades, which is inseparable from the innovative development of organic electronic devices and the diversity of organic semiconductor materials. It is worth mentioning that both of these great advances are inextricably linked to the development of organic high-performance semiconductor materials, especially the representative n-type organic small-molecule semiconductor materials with high electron mobilities. The n-type organic small molecules have the advantages of simple synthesis process, strong intermolecular stacking, tunable molecular structure, and easy to functionalize structures. Furthermore, the n-type semiconductor is a remarkable and important component for constructing complementary logic circuits and p-n heterojunction structures. Therefore, n-type organic semiconductors play an extremely important role in the field of organic electronic materials and are the basis for the industrialization of organic electronic functional devices. This review focuses on the modification strategies of organic small molecules with high electron mobility at molecular level, and discusses in detail the applications of n-type small-molecule semiconductor materials with high mobility in organic field-effect transistors, organic light-emitting transistors, organic photodetectors, and gas sensors.
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Affiliation(s)
- Jiadi Chen
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Weifeng Zhang
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Liping Wang
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Gui Yu
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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Affiliation(s)
- Liang Luo
- State Key Laboratory of Applied Organic Chemistry (SKLAOC) Lanzhou University Lanzhou P. R. China
| | - Zitong Liu
- State Key Laboratory of Applied Organic Chemistry (SKLAOC) Lanzhou University Lanzhou P. R. China
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Ke H, Zhu XM, Xie SM, Ming PX, Liao JZ. Ultrastable radicals in naphthalenediimide-based materials and their stimulus-boosting near-infrared photothermal conversion. Inorg Chem Front 2022. [DOI: 10.1039/d2qi00361a] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Ultrastable radicals in NDI-based crystals are formed by intrinsic electron transfer. Extra light or heat can effectively promote electron transfer, leading to more air-, light- and heat-stable radicals with efficient NIR photothermal conversion.
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Affiliation(s)
- Hua Ke
- Engineering Technology Research Center for Environmental Protection Materials, Pingxiang University, Pingxiang, Jiangxi 337055, PR China
| | - Xin-Mei Zhu
- Engineering Technology Research Center for Environmental Protection Materials, Pingxiang University, Pingxiang, Jiangxi 337055, PR China
| | - Shu-Mei Xie
- Engineering Technology Research Center for Environmental Protection Materials, Pingxiang University, Pingxiang, Jiangxi 337055, PR China
| | - Ping-Xiang Ming
- Engineering Technology Research Center for Environmental Protection Materials, Pingxiang University, Pingxiang, Jiangxi 337055, PR China
| | - Jian-Zhen Liao
- Engineering Technology Research Center for Environmental Protection Materials, Pingxiang University, Pingxiang, Jiangxi 337055, PR China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, PR China
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Yan Y, Zhang NN, Tauche LM, Thangavel K, Pöppl A, Krautscheid H. Direct synthesis of a stable radical doped electrically conductive coordination polymer. Inorg Chem Front 2022. [DOI: 10.1039/d2qi01180h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
K-ONDI, a directly synthesized coordination polymer, contains NDI˙− radicals that are stable in air and in common organic solvents. Benefiting from π–π interactions and unpaired electrons, K-ONDI exhibits an electrical conductivity of 10−6 S cm−1.
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Affiliation(s)
- Yong Yan
- Fakultät für Chemie und Mineralogie, Institut für Anorganische Chemie, Universität Leipzig, Johannisallee 29, 04103 Leipzig, Germany
| | - Ning-Ning Zhang
- School of Chemistry and Chemical Engineering, Liaocheng University, Liaocheng 252059, P. R. China
| | - Lisa Marie Tauche
- Felix Bloch Institute for Solid State Physics, Universität Leipzig, Linnéstraβe 5, 04103 Leipzig, Germany
| | - Kavipriya Thangavel
- Felix Bloch Institute for Solid State Physics, Universität Leipzig, Linnéstraβe 5, 04103 Leipzig, Germany
| | - Andreas Pöppl
- Felix Bloch Institute for Solid State Physics, Universität Leipzig, Linnéstraβe 5, 04103 Leipzig, Germany
| | - Harald Krautscheid
- Fakultät für Chemie und Mineralogie, Institut für Anorganische Chemie, Universität Leipzig, Johannisallee 29, 04103 Leipzig, Germany
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