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Jiang N, Ghosh S, Frentrup M, Fairclough SM, Loeto K, Kusch G, Oliver RA, Joyce HJ. Complications in silane-assisted GaN nanowire growth. NANOSCALE ADVANCES 2023; 5:2610-2620. [PMID: 37143793 PMCID: PMC10153487 DOI: 10.1039/d2na00939k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/21/2022] [Accepted: 04/08/2023] [Indexed: 05/06/2023]
Abstract
Understanding the growth mechanisms of III-nitride nanowires is of great importance to realise their full potential. We present a systematic study of silane-assisted GaN nanowire growth on c-sapphire substrates by investigating the surface evolution of the sapphire substrates during the high temperature annealing, nitridation and nucleation steps, and the growth of GaN nanowires. The nucleation step - which transforms the AlN layer formed during the nitridation step to AlGaN - is critical for subsequent silane-assisted GaN nanowire growth. Both Ga-polar and N-polar GaN nanowires were grown with N-polar nanowires growing much faster than the Ga-polar nanowires. On the top surface of the N-polar GaN nanowires protuberance structures were found, which relates to the presence of Ga-polar domains within the nanowires. Detailed morphology studies revealed ring-like features concentric with the protuberance structures, indicating energetically favourable nucleation sites at inversion domain boundaries. Cathodoluminescence studies showed quenching of emission intensity at the protuberance structures, but the impact is limited to the protuberance structure area only and does not extend to the surrounding areas. Hence it should minimally affect the performance of devices whose functions are based on radial heterostructures, suggesting that radial heterostructures remain a promising device structure.
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Affiliation(s)
- Nian Jiang
- Department of Engineering, University of Cambridge 9 JJ Thomson Ave Cambridge CB3 0FA UK
- Department of Materials Science and Metallurgy, University of Cambridge 27 Charles Babbage Rd Cambridge CB3 0FS UK
| | - Saptarsi Ghosh
- Department of Materials Science and Metallurgy, University of Cambridge 27 Charles Babbage Rd Cambridge CB3 0FS UK
| | - Martin Frentrup
- Department of Materials Science and Metallurgy, University of Cambridge 27 Charles Babbage Rd Cambridge CB3 0FS UK
| | - Simon M Fairclough
- Department of Materials Science and Metallurgy, University of Cambridge 27 Charles Babbage Rd Cambridge CB3 0FS UK
| | - Kagiso Loeto
- Department of Materials Science and Metallurgy, University of Cambridge 27 Charles Babbage Rd Cambridge CB3 0FS UK
| | - Gunnar Kusch
- Department of Materials Science and Metallurgy, University of Cambridge 27 Charles Babbage Rd Cambridge CB3 0FS UK
| | - Rachel A Oliver
- Department of Materials Science and Metallurgy, University of Cambridge 27 Charles Babbage Rd Cambridge CB3 0FS UK
| | - Hannah J Joyce
- Department of Engineering, University of Cambridge 9 JJ Thomson Ave Cambridge CB3 0FA UK
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2
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Chen K, Wang X, Zou C, Liu Q, Chen K, Shi Y, Xu T, Zhao W, He L, Gao F, Li S. Two-In-One: End-Emitting Blue LED and Self-Powered UV Photodetector based on Single Trapezoidal PIN GaN Microwire for Ambient Light UV Monitoring and Feedback. SMALL METHODS 2023:e2300138. [PMID: 37093176 DOI: 10.1002/smtd.202300138] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2023] [Revised: 03/23/2023] [Indexed: 05/03/2023]
Abstract
With the continuous miniaturization and integration of the semiconductor industry, micro/nanoscale integrated photonics has received extensive attention as a key technology for optical communication, optical storage, and optical interconnection. Here, a two-in-one device is reported with both unidirectional blue light emission and UV photodetection functions based on single trapezoidal PIN GaN microwire. By constructing a Fabry-Perot resonator cavity structure, the end-emitting blue light-emitting diode with a low turn-on voltage (≈0.97 V) and high color purity (full width at half maximum ≈22 nm) is implemented. Furthermore, benefiting from the slow growth rate of the semipolar planes on both sides of the trapezoidal microwire and the high diffuse reflectivity of the patterned substrate, the trapezoidal microwire sides can be used as a high-performance UV photodetector. In self-driven mode, the device exhibits a large responsivity (0.218 A W-1 ), high external quantum efficiency (83.31%) and fast response speed (rise/decay time of 0.48/0.98 ms). Finally, the prepared two-in-one device is successfully integrated into ambient light UV monitoring and feedback system and tested. This work provides a novel strategy to combine luminescence with photodetection, demonstrating high potential for applications, such as on-chip photonic integration, energy-saving communication and ambient light monitoring and feedback system.
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Affiliation(s)
- Kai Chen
- Guangdong Engineering Research Centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, China
| | - Xingfu Wang
- Guangdong Engineering Research Centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, China
| | - Can Zou
- Guangdong Engineering Research Centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, China
| | - Qing Liu
- Guangdong Engineering Research Centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, China
| | - Kun Chen
- Guangdong Engineering Research Centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, China
| | - Yuhao Shi
- Guangdong Engineering Research Centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, China
| | - Tengwen Xu
- Guangdong Engineering Research Centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, China
| | - Wei Zhao
- Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou, 510650, China
| | - Longfei He
- Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou, 510650, China
| | - Fangliang Gao
- Guangdong Engineering Research Centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, China
| | - Shuti Li
- Guangdong Engineering Research Centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, China
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3
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Segura-Ruiz J, Salomon D, Rogalev A, Eymery J, Alén B, Martínez-Criado G. Spatially and Time-Resolved Carrier Dynamics in Core-Shell InGaN/GaN Multiple-Quantum Wells on GaN Wire. NANO LETTERS 2021; 21:9494-9501. [PMID: 34762425 DOI: 10.1021/acs.nanolett.1c02760] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Time-resolved cathodoluminescence is a key tool with high temporal and spatial resolution. However, optical spectroscopic information can be also extracted using synchrotron pulses in a hard X-ray nanoprobe, exploiting a phenomenon called X-ray excited optical luminescence. Here, with 20 ps time resolution and 80 nm lateral resolution, we applied this time-resolved X-ray microscopy technique to individual core-shell InGaN/GaN multiple quantum well heterostructures deposited on GaN wires. Our findings suggest that the m-plane related multiple quantum well states govern the carrier dynamics. Likewise, our observations support not only the influence of In incorporation in the recombination rates, but also carrier localization phenomena at the hexagon wire apex. In addition, our experiment calls for further investigations of the spatiotemporal domain on the underlying mechanisms of optoelectronic nanodevices. Its great potential becomes more valuable when time-resolved X-ray excited optical luminescence microscopy is used in operando with other methods, such as X-ray absorption spectroscopy.
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Affiliation(s)
| | - Damien Salomon
- European Synchrotron Radiation Facility, 38043-Grenoble, France
| | - Andrei Rogalev
- European Synchrotron Radiation Facility, 38043-Grenoble, France
| | - Joël Eymery
- Univ. Grenoble Alpes, CEA, IRIG, MEM, NRS, 38000 Grenoble, France
| | - Benito Alén
- Instituto de Micro y Nanotecnología, Consejo Superior de Investigaciones Científicas, 28760 Tres Cantos, Spain
| | - Gema Martínez-Criado
- European Synchrotron Radiation Facility, 38043-Grenoble, France
- Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, 28049 Cantoblanco, Spain
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4
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Tang B, Gong L, Hu H, Sun H, Zhou S. Toward efficient long-wavelength III-nitride emitters using a hybrid nucleation layer. OPTICS EXPRESS 2021; 29:27404-27415. [PMID: 34615157 DOI: 10.1364/oe.430721] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2021] [Accepted: 08/01/2021] [Indexed: 06/13/2023]
Abstract
The realization of efficient III-nitride emitters in the green-to-amber region is fundamental to the monolithic integration of multicolor emitters and the development of III-nitride-based full-color high-resolution displays. A hybrid nucleation layer, which includes sputtered AlN and mid-temperature GaN components, was proposed for the development of efficient III-nitride emitters in the green-to-amber region. The mid-temperature GaN component in the hybrid nucleation layer induced the formation of a stacking fault band structure, which effectively relaxed the misfit stress at the GaN/sapphire interface. A reduced dislocation density and in-plane compressive stress in InGaN/GaN multiple quantum wells were obtained on the hybrid nucleation layer in comparison with the conventional sputtered AlN nucleation layer. Consequently, a significantly enhanced internal quantum efficiency and improved light output power were achieved for the LEDs grown on the hybrid nucleation layer. This gain is attributed to the increased localization depth and spatial overlapping of the electron and hole wave functions. In the present study, the hybrid nucleation layer provides a promising approach for the pursuit of efficient III-nitride emitters in the green-to-amber region.
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5
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Loeto K, Kusch G, Coulon PM, Fairclough SM, Boulbar EL, Girgel I, Shields PA, Oliver RA. Point Defects in InGaN/GaN Core–Shell Nanorods: Role of the Regrowth Interface. NANO EXPRESS 2021. [DOI: 10.1088/2632-959x/abe990] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Abstract
Abstract
Core-shell nanorod based light-emitting diodes (LEDs) with their exposed non-polar surfaces have the potential to overcome the limitations of planar LEDs by circumventing the quantum confined stark effect. In this experiment, InGaN/GaN core-shell nanorods were fabricated by a combination of top-down etching and bottom-up regrowth using metal-organic vapour phase epitaxy. When viewing the nanorods along their long axis, monochromatic cathodoluminescence maps taken at the GaN near-band-edge emission energy (3.39 eV) reveal a ring-like region of lower emission intensity. The diameter of this ring is found to be 530 (±20)nm corresponding to the ∼510 nm diameter nickel etch masks used to produce the initial GaN nanopillars. Thus, the dark ring corresponds to the regrowth interface. To understand the origin of the ring, scanning transmission electron microscopy (STEM) and cathodoluminescence (CL) hyperspectral mapping at 10K were performed. STEM imaging reveals the absence of extended defects in the nanorods and indeed near the regrowth interface. Monochromatic CL maps recorded at 10K show that the ring remains dark for monochromatic maps taken at the GaN near-band-edge emission energy (3.47 eV) but is bright when considering the donor-acceptor pair emission energy (3.27 eV). This peculiar anticorrelation indicates that the dark ring originates from an agglomeration of point defects associated with donor-acceptor pair emission. The point defects are incorporated and buried at the GaN regrowth interface from the chemical and/or physical damage induced by etching and lower the radiative recombination rate; limiting the radiative efficiency close to the regrowth interface.
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6
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Zhang H, Piazza V, Neplokh V, Guan N, Bayle F, Collin S, Largeau L, Babichev A, Julien FH, Tchernycheva M. Correlated optical and electrical analyses of inhomogeneous core/shell InGaN/GaN nanowire light emitting diodes. NANOTECHNOLOGY 2021; 32:105202. [PMID: 33142273 DOI: 10.1088/1361-6528/abc70e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The performance of core-shell InGaN/GaN nanowire (NW) light emitting diodes (LEDs) can be limited by wire-to-wire electrical inhomogeneities. Here we investigate an array of core-shell InGaN/GaN NWs which are morphologically identical, but present electrical dissimilarities in order to understand how the nanoscale phenomena observed in individual NWs affect the working performance of the whole array. The LED shows a low number of NWs (∼20%) producing electroluminescence under operating conditions. This is related to a presence of a potential barrier at the interface between the NW core and the radially grown n-doped layer, which differently affects the electrical properties of the NWs although they are morphologically identical. The impact of the potential barrier on the performance of the NW array is investigated by correlating multi-scanning techniques, namely electron beam induced current microscopy, electroluminescence mapping and cathodoluminescence analysis. It is found that the main cause of inhomogeneity in the array is related to a non-optimized charge injection into the active region, which can be overcome by changing the contact architecture so that the electrons become injected directly in the n-doped underlayer. The LED with so-called 'front-n-contacting' is developed leading to an increase of the yield of emitting NWs from 20% to 65%.
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Affiliation(s)
- H Zhang
- School of Microelectronics, Dalian University of Technology, 116024 Dalian, People's Republic of China
- C2N-CNRS, Univ. Paris Saclay, F-91120 Palaiseau, France
| | - V Piazza
- C2N-CNRS, Univ. Paris Saclay, F-91120 Palaiseau, France
- Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - V Neplokh
- C2N-CNRS, Univ. Paris Saclay, F-91120 Palaiseau, France
- National Research Academic University of the Russian Academy of Sciences, 194021, Saint Petersburg, Russia
| | - N Guan
- C2N-CNRS, Univ. Paris Saclay, F-91120 Palaiseau, France
| | - F Bayle
- C2N-CNRS, Univ. Paris Saclay, F-91120 Palaiseau, France
| | - S Collin
- C2N-CNRS, Univ. Paris Saclay, F-91120 Palaiseau, France
| | - L Largeau
- C2N-CNRS, Univ. Paris Saclay, F-91120 Palaiseau, France
| | - A Babichev
- ITMO University, 197101, Saint Petersburg, Russia
| | - F H Julien
- C2N-CNRS, Univ. Paris Saclay, F-91120 Palaiseau, France
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7
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Grenier V, Finot S, Jacopin G, Bougerol C, Robin E, Mollard N, Gayral B, Monroy E, Eymery J, Durand C. UV Emission from GaN Wires with m-Plane Core-Shell GaN/AlGaN Multiple Quantum Wells. ACS APPLIED MATERIALS & INTERFACES 2020; 12:44007-44016. [PMID: 32894670 DOI: 10.1021/acsami.0c08765] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The present work reports high-quality nonpolar GaN/Al0.6Ga0.4N multiple quantum wells (MQWs) grown in core-shell geometry by metal-organic vapor-phase epitaxy on the m-plane sidewalls of c̅-oriented hexagonal GaN wires. Optical and structural studies reveal ultraviolet (UV) emission originating from the core-shell GaN/AlGaN MQWs. Tuning the m-plane GaN QW thickness from 4.3 to 0.7 nm leads to a shift of the emission from 347 to 292 nm, consistent with Schrödinger-Poisson calculations. The evolution of the luminescence with temperature displays signs of strong localization, especially for samples with thinner GaN QWs and no evidence of quantum-confined Stark effect, as expected for nonpolar m-plane surfaces. The internal quantum efficiency derived from the photoluminescence (PL) intensity ratio at low and room temperatures is maximum (∼7.3% measured at low power excitation) for 2.6 nm thick quantum wells, emitting at 325 nm, and shows a large drop for thicker QWs. An extensive study of the PL quenching with temperature is presented. Two nonradiative recombination paths are activated at different temperatures. The low-temperature path is found to be intrinsic to the heterostructure, whereas the process that dominates at high temperature depends on the QW thickness and is strongly enhanced for QWs larger than 2.6 nm, causing a rapid decrease in the internal quantum efficiency.
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Affiliation(s)
- Vincent Grenier
- Université Grenoble Alpes, CEA, IRIG, PHELIQS, NPSC, 38000 Grenoble, France
| | - Sylvain Finot
- Université Grenoble Alpes, CNRS, Institut Néel, 38000 Grenoble, France
| | - Gwénolé Jacopin
- Université Grenoble Alpes, CNRS, Institut Néel, 38000 Grenoble, France
| | | | - Eric Robin
- Université Grenoble Alpes, CEA, IRIG, MEM, LEMMA, 38000 Grenoble, France
| | - Nicolas Mollard
- Université Grenoble Alpes, CEA, IRIG, MEM, LEMMA, 38000 Grenoble, France
| | - Bruno Gayral
- Université Grenoble Alpes, CEA, IRIG, PHELIQS, NPSC, 38000 Grenoble, France
| | - Eva Monroy
- Université Grenoble Alpes, CEA, IRIG, PHELIQS, NPSC, 38000 Grenoble, France
| | - Joël Eymery
- Université Grenoble Alpes, CEA, IRIG, MEM, NRS, 38000 Grenoble, France
| | - Christophe Durand
- Université Grenoble Alpes, CEA, IRIG, PHELIQS, NPSC, 38000 Grenoble, France
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8
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Almalawi D, Lopatin S, Mitra S, Flemban T, Siladie AM, Gayral B, Daudin B, Roqan IS. Enhanced UV Emission of GaN Nanowires Functionalized by Wider Band Gap Solution-Processed p-MnO Quantum Dots. ACS APPLIED MATERIALS & INTERFACES 2020; 12:34058-34064. [PMID: 32623885 PMCID: PMC7497627 DOI: 10.1021/acsami.0c07029] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/16/2020] [Accepted: 07/04/2020] [Indexed: 06/11/2023]
Abstract
GaN-based UV light-emitting devices suffer from low efficiency. To mitigate this issue, we hybridized GaN nanowires (NWs) grown on Si substrates by plasma-assisted molecular beam epitaxy with solution-processed p-type MnO quantum dots (QDs) characterized by a wider band gap (∼5 eV) than that of GaN. Further investigations reveal that the photoluminescence intensity of the GaN NWs increases up to ∼3.9-fold (∼290%) after functionalizing them with p-MnO QDs, while the internal quantum efficiency is improved by ∼1.7-fold. Electron energy loss spectroscopy (EELS) incorporated into transmission electron microscopy reveals an increase in the density of states in QD-decorated NWs compared to the bare ones. The advanced optical and EELS analyses indicate that the energy transfer from the wider band gap p-MnO QDs to n-GaN NW can lead to substantial emission enhancement and greater radiative recombination contribution because of the good band alignment between MnO QDs and GaN NWs. This work provides valuable insights into an environmentally friendly strategy for improving UV device performance.
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Affiliation(s)
- Dhaifallah Almalawi
- Physical
Sciences and Engineering Division, King
Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
- Physics
Department, Faculty of Science, Taif University, P.O. Box 888, Taif 21974, Saudi Arabia
| | - Sergei Lopatin
- Imaging
and Characterization Laboratory, King Abdullah
University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Somak Mitra
- Physical
Sciences and Engineering Division, King
Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Tahani Flemban
- Department
of Physics, College of Science, Imam Abdulrahman
Bin Faisal University (IAU), Dammam 31441, Saudi Arabia
| | | | - Bruno Gayral
- University
of Grenoble-Alpes, CEA-IRIG, PHELIQS, 17 av. des Martyrs, Grenoble F-38000, France
| | - Bruno Daudin
- University
of Grenoble-Alpes, CEA-IRIG, PHELIQS, 17 av. des Martyrs, Grenoble F-38000, France
| | - Iman S. Roqan
- Physical
Sciences and Engineering Division, King
Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
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9
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Steinmann RG, Martinez-Criado G, Salomon D, Vitoux H, Tucoulou R, Villanova J, Laboure S, Eymery J, Segura-Ruiz J. A helium mini-cryostat for the nanoprobe beamline ID16B at ESRF: characteristics and performance. JOURNAL OF SYNCHROTRON RADIATION 2020; 27:1074-1079. [PMID: 33566018 DOI: 10.1107/s1600577520007110] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/10/2020] [Accepted: 05/26/2020] [Indexed: 06/12/2023]
Abstract
A helium mini-cryostat has been developed for the hard X-ray nanoprobe ID16B of the European Synchrotron to collect X-ray excited optical luminescence and X-ray fluorescence at low temperature (<10 K). The mini-cryostat has been specifically designed to fit within the strong space restrictions and high-demanding mechanical constraints imposed by the beamline to provide vibration-free operation and maximal thermal stability. This paper reports the detailed design, architecture and technical requirements of the mini-cryostat, and presents the first experimental data measured using the cryogenic equipment. The resulting cryo-system features ultimate thermal stability, fast cool-down and ultra-low vibrations. The simultaneous X-ray fluorescence and X-ray excited optical luminescence data acquired from bulk GaN and core/shell InGaN/GaN multi-quantum wells validated the excellent performance of the cryostat with ultimate resolution, stability and sensitivity.
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Affiliation(s)
- Ricardo G Steinmann
- ESRF - The European Synchrotron, 71 Avenue des Martyrs, 30843 Grenoble, France
| | | | - Damien Salomon
- ESRF - The European Synchrotron, 71 Avenue des Martyrs, 30843 Grenoble, France
| | - Hugo Vitoux
- ESRF - The European Synchrotron, 71 Avenue des Martyrs, 30843 Grenoble, France
| | - Remi Tucoulou
- ESRF - The European Synchrotron, 71 Avenue des Martyrs, 30843 Grenoble, France
| | - Julie Villanova
- ESRF - The European Synchrotron, 71 Avenue des Martyrs, 30843 Grenoble, France
| | - Sylvain Laboure
- ESRF - The European Synchrotron, 71 Avenue des Martyrs, 30843 Grenoble, France
| | - Joel Eymery
- Univ. Grenoble Alpes, CEA, IRIG, MEM, NRS, 38000 Grenoble, France
| | - Jaime Segura-Ruiz
- ESRF - The European Synchrotron, 71 Avenue des Martyrs, 30843 Grenoble, France
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10
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Blumberg C, Häuser P, Wefers F, Jansen D, Tegude FJ, Weimann N, Prost W. A systematic study of Ga- and N-polar GaN nanowire–shell growth by metal organic vapor phase epitaxy. CrystEngComm 2020. [DOI: 10.1039/d0ce00693a] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
N-polar and Ga-polar (0001) GaN core–shell wires detached from an AlN/Si(111) growth template. Different facets have been identified, limiting the vertical shell growth extension, modelled by varying surface terminations and different H-passivation.
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Affiliation(s)
- Christian Blumberg
- Dept. Components for High Frequency Electronics
- University of Duisburg-Essen
- 47057 Duisburg
- Germany
| | - Patrick Häuser
- Dept. Components for High Frequency Electronics
- University of Duisburg-Essen
- 47057 Duisburg
- Germany
| | - Fabian Wefers
- Dept. Components for High Frequency Electronics
- University of Duisburg-Essen
- 47057 Duisburg
- Germany
| | - Dennis Jansen
- Dept. Components for High Frequency Electronics
- University of Duisburg-Essen
- 47057 Duisburg
- Germany
| | - Franz-Josef Tegude
- Dept. Components for High Frequency Electronics
- University of Duisburg-Essen
- 47057 Duisburg
- Germany
| | - Nils Weimann
- Dept. Components for High Frequency Electronics
- University of Duisburg-Essen
- 47057 Duisburg
- Germany
| | - Werner Prost
- Dept. Components for High Frequency Electronics
- University of Duisburg-Essen
- 47057 Duisburg
- Germany
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