The High Anisotropy of the Epitaxial Growth of the Well-Aligned Sb2Se3 Nanoribbons on Mica

Recent Advances in Antimony Selenide Photodetectors

Photodetectors (PDs) rapidly capture optical signals and convert them into electrical signals, making them indispensable in a variety of applications including imaging, optical communication, remote sensing, and biological detection. Recently, antimony selenide (Sb2Se3) has achieved remarkable progress due to its earth-abundant, low toxicity, low price, suitable bandgap width, high absorption coefficient, and unique structural characteristics. Sb2Se3 has been extensively studied in solar cells, but there's a lack of timely updates in the field of PDs. A literature review based on Sb2Se3 PDs is urgently warranted. This review aims to provide a concise understanding of the latest progress in Sb2Se3 PDs, with a focus on the basic characteristics and the performance optimization for Sb2Se3 photoconductive-type and photodiode-type detectors, including nanostructure regulation, process optimization, and stability improvement of flexible devices. Furthermore, the application progresses of Sb2Se3 PDs in heart rate monitoring, and monolithic-integrated matrix images are introduced. Finally, this review presents various strategies with potential and feasibility to address challenges for the rapid development and commercial application of Sb2Se3 PDs.

Strain and electric field tunable photoelectric properties of multilayer Sb2Se3

Antimony selenide, Sb₂Se₃, has been attracted widespread attention in photovoltaic applications due to its high absorption coefficient and suitable band gap. However, the influence of uniaxial strain and electric field on the electronic and photovoltaic properties of multilayer Sb₂Se₃is still unknown. Here, the quantitative relationship, such as strain-property, electric field-property, as well as thickness-property, is explored via first-principles calculations. Our results demonstrate that the band gap and photovoltaic parameters (J_sc,V_oc, FF and PCE) of multilayer Sb₂Se₃are not only affected by the uniaxial strain and electric field, but can also be tuned via the coupling of thickness with strain and electric field. The band-gap of multilayer Sb₂Se₃is linear dependent on uniaxial strain and external electric field. We found that the effect of strain on the photovoltaic parameters could be negligible as compared with the effect of thickness. However, the effect of electric field is thickness dependent, 1-2 layer(s) thin films are not affected while the impact of electric field increases with the increasing thickness. The quantitative strain (electric field)-properties relation of multilayer Sb₂Se₃suggesting that Sb₂Se₃films have a potential application in the field of strain and electric field sensors.

Comprehensive rear surface passivation of superstrate Sb2Se3 solar cells via post-deposition selenium annealing treatments and the application of an electron blocking layer

Sb2Se3, a quasi-1D structured binary chalcogenide, has great potential as a solar cell light absorber owing to its anisotropic carrier transport and benign grain boundaries when the absorber layer is...