Anomalous Interfacial Electron-Transfer Kinetics in Twisted Trilayer Graphene Caused by Layer-Specific Localization

Five years of scanning electrochemical cell microscopy (SECCM): new insights and innovations

Scanning electrochemical cell microscopy (SECCM) is a nanopipette-based technique which enables measurement of localised electrochemistry. SECCM has found use in a wide range of electrochemical applications, and due to the wider uptake of this technique in recent years, new applications and techniques have been developed. This minireview has collected all SECCM research articles published in the last 5 years, to demonstrate and celebrate the recent advances, and to make it easier for SECCM researchers to remain well-informed. The wide range of SECCM applications is demonstrated, which are categorised here into electrocatalysis, electroanalysis, photoelectrochemistry, biological materials, energy storage materials, corrosion, electrosynthesis, and instrumental development. In the collection of this library of SECCM studies, a few key trends emerge. (1) The range of materials and processes explored with SECCM has grown, with new applications emerging constantly. (2) The instrumental capabilities of SECCM have grown, with creative techniques being developed from research groups worldwide. (3) The SECCM research community has grown significantly, with adoption of the SECCM technique becoming more prominent.

Twisto-Electrochemical Activity Volcanoes in Trilayer Graphene

In this work, we develop a twist-dependent electrochemical activity map, combining a low-energy continuum electronic structure model with modified Marcus-Hush-Chidsey kinetics in trilayer graphene. We identify a counterintuitive rate enhancement region spanning the magic angle curve and incommensurate twists in the system geometry. We find a broad activity peak with a ruthenium hexamine redox couple in regions corresponding to both magic angles and incommensurate angles, a result qualitatively distinct from the twisted bilayer case. Flat bands and incommensurability offer new avenues for reaction rate enhancements in electrochemical transformations.

Stacking Order Engineering of Two-Dimensional Materials and Device Applications

Stacking orders in 2D van der Waals (vdW) materials dictate the relative sliding (lateral displacement) and twisting (rotation) between atomically thin layers. By altering the stacking order, many new ferroic, strongly correlated and topological orderings emerge with exotic electrical, optical and magnetic properties. Thanks to the weak vdW interlayer bonding, such highly flexible and energy-efficient stacking order engineering has transformed the design of quantum properties in 2D vdW materials, unleashing the potential for miniaturized high-performance device applications in electronics, spintronics, photonics, and surface chemistry. This Review provides a comprehensive overview of stacking order engineering in 2D vdW materials and their device applications, ranging from the typical fabrication and characterization methods to the novel physical properties and the emergent slidetronics and twistronics device prototyping. The main emphasis is on the critical role of stacking orders affecting the interlayer charge transfer, orbital coupling and flat band formation for the design of innovative materials with on-demand quantum properties and surface potentials. By demonstrating a correlation between the stacking configurations and device functionality, we highlight their implications for next-generation electronic, photonic and chemical energy conversion devices. We conclude with our perspective of this exciting field including challenges and opportunities for future stacking order engineering research.