Atomic and Electronic Structure of a Multidomain GeTe Crystal

Van der Waals Ferroelectrics: Theories, Materials, and Device Applications

In recent years, an increasing number of 2D van der Waals (vdW) materials are theory-predicted or laboratory-validated to possess in-plane (IP) and/or out-of-plane (OOP) spontaneous ferroelectric polarization. Due to their dangling-bond-free surfaces, interlayer charge coupling, robust polarization, tunable energy band structures, and compatibility with silicon-based technologies, vdW ferroelectric materials exhibit great promise in ferroelectric memories, neuromorphic computing, nanogenerators, photovoltaic devices, spintronic devices, and so on. Here, the very recent advances in the field of vdW ferroelectrics (FEs) are reviewed. First, theories of ferroelectricity are briefly discussed. Then, a comprehensive summary of the non-stacking vdW ferroelectric materials is provided based on their crystal structures and the emerging sliding ferroelectrics. In addition, their potential applications in various branches/frontier fields are enumerated, with a focus on artificial intelligence. Finally, the challenges and development prospects of vdW ferroelectrics are discussed.

Strain-induced van der Waals gaps in GeTe revealed by in situ nanobeam diffraction

Ordered germanium vacancies in germanium telluride thermoelectric material are called van der Waals (vdW) gaps, and they are beneficial for the thermoelectric performance of the material. The vdW gaps have been observed by atomic resolution scanning transmission electron microscopy, but their origin remains unclear, which prevents their extensive application in other materials systems. Here, we report that the occurrence of vdW gaps in germanium telluride is mainly driven by strain from the cubic-to-rhombohedral martensitic transition. Direct strain and structural evidence are given here by in situ nanobeam diffraction and in situ transmission electron microscopy observation. Dislocation theory is used to discuss the origin of vdW gaps. Our work here paves the way for self-assembling two-dimensional ordered vacancies, which establishes a previously unidentified degree of freedom to adjust their electronic and thermal properties.

Nanoscale phase separation in the oxide layer at GeTe (111) surfaces

As a semiconductor ferroelectric, GeTe has become a focus of renewed attention due to the recent discovery of giant Rashba splitting. It already has a wide range of applications, from thermoelectricity to data storage. Its stability in ambient air, as well as the structure and properties of an oxide layer, define the processing media for device production and operation. Here, we studied a reaction between the GeTe (111) surface and molecular oxygen for crystals having solely inversion domains. We evaluated the reaction kinetics both ex situ and in situ using NAP XPS. The structure of the oxide layer is extensively discussed, where, according to HAADF-STEM and STEM-EDX, nanoscale phase separation of GeO₂ and Te is observed, which is unusual for semiconductors. We believe that such behaviour is closely related to the ferroelectric properties and the domain structure of GeTe.

Ultrafast Thermalization Pathways of Excited Bulk and Surface States in the Ferroelectric Rashba Semiconductor GeTe

A large Rashba effect is essential for future applications in spintronics. Particularly attractive is understanding and controlling nonequilibrium properties of ferroelectric Rashba semiconductors. Here, time- and angle-resolved photoemission is utilized to access the ultrafast dynamics of bulk and surface transient Rashba states after femtosecond optical excitation of GeTe. A complex thermalization pathway is observed, wherein three different timescales can be clearly distinguished: intraband thermalization, interband equilibration, and electronic cooling. These dynamics exhibit an unconventional temperature dependence: while the cooling phase speeds up with increasing sample temperature, the opposite happens for interband thermalization. It is demonstrated how, due to the Rashba effect, an interdependence of these timescales on the relative strength of both electron-electron and electron-phonon interactions is responsible for the counterintuitive temperature dependence, with spin-selection constrained interband electron-electron scatterings found both to dominate dynamics away from the Fermi level, and to weaken with increasing temperature. These findings are supported by theoretical calculations within the Boltzmann approach explicitly showing the opposite behavior of all relevant electron-electron and electron-phonon scattering channels with temperature, thus confirming the microscopic mechanism of the experimental findings. The present results are important for future applications of ferroelectric Rashba semiconductors and their excitations in ultrafast spintronics.

Tunable Hollow Nanoreactors for In Situ Synthesis of GeP Electrodes towards High-Performance Sodium Ion Batteries

The practical application of germanium phosphide (GeP) in battery systems is seriously impeded referring to the sluggish reaction kinetics and severe volume change. Nanostructure design that elaborately resolves the above issues is highly desired but still remains a big challenge. Herein, unique hollow nanoreactors assembled with nitrogen-doped carbon networks for in situ synthesis of the GeP electrodes are proposed for the first time. Such nanoreactors form a self-supported conductive network, ensuring sufficient electrolyte infiltration and fast electron transport. They restrain crystal growth and accommodate the volume expansion of GeP simultaneously. Reaction kinetics and confinement effect are optimized through nanoreactor size regulation. The optimized GeP electrode has high reversible capacities and outstanding cyclability and rate performance for sodium storage, outperforming most previously reported phosphides.

Surface Modification and Subsequent Fermi Density Enhancement of Bi(111)

Defects introduced to the surface of Bi(111) break the translational symmetry and modify the surface states locally. We present a theoretical and experimental study of the 2D defects on the surface of Bi(111) and the states that they induce. Bi crystals cleaved in ultrahigh vacuum (UHV) at low temperature (110 K) and the resulting ion-etched surface are investigated by low-energy electron diffraction (LEED), X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy (UPS), and scanning tunneling microscopy (STM) as well as spectroscopy (STS) techniques in combination with density functional theory (DFT) calculations. STS measurements of cleaved Bi(111) reveal that a commonly observed bilayer step edge has a lower density of states (DOS) around the Fermi level as compared to the atomic-flat terrace. Following ion bombardment, the Bi(111) surface reveals anomalous behavior at both 110 and 300 K: Surface periodicity is observed by LEED, and a significant increase in the number of bilayer step edges and energetically unfavorable monolayer steps is observed by STM. It is suggested that the newly exposed monolayer steps and the type A bilayer step edges result in an increase to the surface Fermi density as evidenced by UPS measurements and the Kohn-Sham DOS. These states appear to be thermodynamically stable under UHV conditions.

Electronic and structural characterisation of polycrystalline platinum disulfide thin films

We employ a combination of scanning tunnelling microscopy (STM) and scanning tunnelling spectroscopy (STS) to investigate the properties of layered PtS₂, synthesised via thermally assisted conversion (TAC) of a metallic Pt thin film. STM measurements reveal the 1T crystal structure of PtS₂, and the lattice constant is determined to be 3.58 ± 0.03 Å. STS allowed the electronic structure of individual PtS₂ crystallites to be directly probed and a bandgap of ∼1.03 eV was determined for a 3.8 nm thick flake at liquid nitrogen temperature. These findings substantially expand understanding of the atomic and electronic structure of PtS₂ and indicate that STM is a powerful tool capable of locally probing non-uniform polycrystalline films, such as those produced by TAC. Prior to STM/STS measurements the quality of synthesised TAC PtS₂ was analysed by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. These results are of relevance to applications-focussed studies centred on PtS₂ and may inform future efforts to optimise the synthesis conditions for thin film PtS₂.

Semiconducting thin-film polycrystalline PtS₂ is characterised by atomically resolved scanning tunnelling microscopy and spectroscopy.