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Prasad MK, Taverne MPC, Huang CC, Mar JD, Ho YLD. Hexagonal Boron Nitride Based Photonic Quantum Technologies. MATERIALS (BASEL, SWITZERLAND) 2024; 17:4122. [PMID: 39203299 PMCID: PMC11356713 DOI: 10.3390/ma17164122] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/10/2024] [Revised: 08/02/2024] [Accepted: 08/13/2024] [Indexed: 09/03/2024]
Abstract
Hexagonal boron nitride is rapidly gaining interest as a platform for photonic quantum technologies, due to its two-dimensional nature and its ability to host defects deep within its large band gap that may act as room-temperature single-photon emitters. In this review paper we provide an overview of (1) the structure, properties, growth and transfer of hexagonal boron nitride; (2) the creationof colour centres in hexagonal boron nitride and assignment of defects by comparison with ab initio calculations for applications in photonic quantum technologies; and (3) heterostructure devices for the electrical tuning and charge control of colour centres that form the basis for photonic quantum technology devices. The aim of this review is to provide readers a summary of progress in both defect engineering and device fabrication in hexagonal boron nitride based photonic quantum technologies.
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Affiliation(s)
- Madhava Krishna Prasad
- Joint Quantum Centre (JQC) Durham-Newcastle, School of Mathematics, Statistics and Physics, Newcastle University, Newcastle upon Tyne NE1 7RU, UK;
| | - Mike P. C. Taverne
- Department of Mathematics, Physics & Electrical Engineering, Northumbria University, Newcastle upon Tyne NE1 8ST, UK; (M.P.C.T.); (Y.-L.D.H.)
- Department of Electrical and Electronic Engineering, University of Bristol, Bristol BS8 1UB, UK
| | - Chung-Che Huang
- Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK
| | - Jonathan D. Mar
- Joint Quantum Centre (JQC) Durham-Newcastle, School of Mathematics, Statistics and Physics, Newcastle University, Newcastle upon Tyne NE1 7RU, UK;
| | - Ying-Lung Daniel Ho
- Department of Mathematics, Physics & Electrical Engineering, Northumbria University, Newcastle upon Tyne NE1 8ST, UK; (M.P.C.T.); (Y.-L.D.H.)
- Department of Electrical and Electronic Engineering, University of Bristol, Bristol BS8 1UB, UK
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Jat MK, Mishra S, Mann HK, Bajaj R, Watanabe K, Taniguchi T, Krishnamurthy HR, Jain M, Bid A. Controlling Umklapp Scattering in a Bilayer Graphene Moiré Superlattice. NANO LETTERS 2024; 24:2203-2209. [PMID: 38345527 DOI: 10.1021/acs.nanolett.3c04223] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/22/2024]
Abstract
We present experimental findings on electron-electron scattering in two-dimensional moiré heterostructures with a tunable Fermi wave vector, reciprocal lattice vector, and band gap. We achieve this in high-mobility aligned heterostructures of bilayer graphene (BLG) and hBN. Around the half-full point, the primary contribution to the resistance of these devices arises from Umklapp electron-electron (Uee) scattering, making the resistance of graphene/hBN moiré devices significantly larger than that of non-aligned devices (where Uee is forbidden). We find that the strength of Uee scattering follows a universal scaling with Fermi energy and is nonmonotonically dependent on the superlattice period. The Uee scattering can be tuned with the electric field and is affected by layer polarization of BLG. It has a strong particle-hole asymmetry; the resistance when the chemical potential is in the conduction band is significantly lower than when it is in the valence band, making the electron-doped regime more practical for potential applications.
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Affiliation(s)
- Mohit Kumar Jat
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Shubhankar Mishra
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | | | - Robin Bajaj
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - H R Krishnamurthy
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Manish Jain
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Aveek Bid
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
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Xiao X, Li L, Deng H, Zhong Y, Deng W, Xu Y, Chen Z, Zhang J, Hu X, Wang Y. Biomass-derived 2D carbon materials: structure, fabrication, and application in electrochemical sensors. J Mater Chem B 2023; 11:10793-10821. [PMID: 37910389 DOI: 10.1039/d3tb01910a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/03/2023]
Abstract
Biomass, a renewable hydrocarbon, is one of the favorable sources of advanced carbon materials owing to its abundant resources and diverse molecular structures. Biomass-based two-dimensional carbon nanomaterials (2D-BC) have attracted extensive attention due to their tunable structures and properties, and have been widely used in the design and fabrication of electrochemical sensing platforms. This review embarks on the thermal conversion process of biomass from different sources and the synthesis strategy of 2D-BC materials. The affinity between 2D-BC structure and properties is emphasized. The recent progress in 2D-BC-based electrochemical sensors for health and environmental monitoring is also presented. Finally, the challenges and future development directions related to such materials are proposed in order to promote their further application in the field of electrochemical sensing.
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Affiliation(s)
- Xuanyu Xiao
- National Engineering Research Center for Biomaterials & College of Biomedical Engineering, Sichuan University, 29 Wangjiang Road, Chengdu, Sichuan, 610065, China.
| | - Lei Li
- National Engineering Research Center for Biomaterials & College of Biomedical Engineering, Sichuan University, 29 Wangjiang Road, Chengdu, Sichuan, 610065, China.
| | - Hui Deng
- Rotex Co., Ltd., Chengdu, Sichuan 610043, China
| | - Yuting Zhong
- National Engineering Research Center for Biomaterials & College of Biomedical Engineering, Sichuan University, 29 Wangjiang Road, Chengdu, Sichuan, 610065, China.
| | - Wei Deng
- Department of Orthopedics Pidu District People's Hospital, The Third Affiliated Hospital of Chengdu Medical College Chengdu, Sichuan, 611730, China
| | - Yuanyuan Xu
- National Engineering Research Center for Biomaterials & College of Biomedical Engineering, Sichuan University, 29 Wangjiang Road, Chengdu, Sichuan, 610065, China.
| | - Zhiyu Chen
- National Engineering Research Center for Biomaterials & College of Biomedical Engineering, Sichuan University, 29 Wangjiang Road, Chengdu, Sichuan, 610065, China.
| | - Jieyu Zhang
- National Engineering Research Center for Biomaterials & College of Biomedical Engineering, Sichuan University, 29 Wangjiang Road, Chengdu, Sichuan, 610065, China.
| | - Xuefeng Hu
- West China School of Basic Medical Sciences & Forensic Medicine Sichuan University, Chengdu, 610044, China
| | - Yunbing Wang
- National Engineering Research Center for Biomaterials & College of Biomedical Engineering, Sichuan University, 29 Wangjiang Road, Chengdu, Sichuan, 610065, China.
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Ogawa S, Fukushima S, Shimatani M. Hexagonal Boron Nitride for Photonic Device Applications: A Review. MATERIALS (BASEL, SWITZERLAND) 2023; 16:2005. [PMID: 36903116 PMCID: PMC10004243 DOI: 10.3390/ma16052005] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/25/2023] [Revised: 02/23/2023] [Accepted: 02/24/2023] [Indexed: 06/18/2023]
Abstract
Hexagonal boron nitride (hBN) has emerged as a key two-dimensional material. Its importance is linked to that of graphene because it provides an ideal substrate for graphene with minimal lattice mismatch and maintains its high carrier mobility. Moreover, hBN has unique properties in the deep ultraviolet (DUV) and infrared (IR) wavelength bands owing to its indirect bandgap structure and hyperbolic phonon polaritons (HPPs). This review examines the physical properties and applications of hBN-based photonic devices that operate in these bands. A brief background on BN is provided, and the theoretical background of the intrinsic nature of the indirect bandgap structure and HPPs is discussed. Subsequently, the development of DUV-based light-emitting diodes and photodetectors based on hBN's bandgap in the DUV wavelength band is reviewed. Thereafter, IR absorbers/emitters, hyperlenses, and surface-enhanced IR absorption microscopy applications using HPPs in the IR wavelength band are examined. Finally, future challenges related to hBN fabrication using chemical vapor deposition and techniques for transferring hBN to a substrate are discussed. Emerging techniques to control HPPs are also examined. This review is intended to assist researchers in both industry and academia in the design and development of unique hBN-based photonic devices operating in the DUV and IR wavelength regions.
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Affiliation(s)
- Shinpei Ogawa
- Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki 661-8661, Hyogo, Japan
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Dimitropoulos M, Trakakis G, Androulidakis C, Kotsidi M, Galiotis C. Wrinkle-mediated CVD synthesis of wafer scale Graphene/h-BN heterostructures. NANOTECHNOLOGY 2022; 34:025601. [PMID: 36215949 DOI: 10.1088/1361-6528/ac98d0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2022] [Accepted: 10/10/2022] [Indexed: 06/16/2023]
Abstract
The combination of two-dimensional materials (2D) into heterostructures enables their integration in tunable ultrathin devices. For applications in electronics and optoelectronics, direct growth of wafer-scale and vertically stacked graphene/hexagonal boron nitride (h-BN) heterostructures is vital. The fundamental problem, however, is the catalytically inert nature of h-BN substrates, which typically provide a low rate of carbon precursor breakdown and consequently a poor rate of graphene synthesis. Furthermore, out-of-plane deformations such as wrinkles are commonly seen in 2D materials grown by chemical vapor deposition (CVD). Herein, a wrinkle-facilitated route is developed for the fast growth of graphene/h-BN vertical heterostructures on Cu foils. The key advantage of this synthetic pathway is the exploitation of the increased reactivity from inevitable line defects arising from the CVD process, which can act as active sites for graphene nucleation. The resulted heterostructures are found to exhibit superlubric properties with increased bending stiffness, as well as directional electronic properties, as revealed from atomic force microscopy measurements. This work offers a brand-new route for the fast growth of Gr/h-BN heterostructures with practical scalability, thus propelling applications in electronics and nanomechanical systems.
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Affiliation(s)
- Marinos Dimitropoulos
- Department of Chemical Engineering, University of Patras, GR-26500 Patras, Greece
- Institute of Chemical Engineering Sciences (ICE-HT), Foundation of Research and Technology Hellas, PO Box 1414, GR-26504 Patras, Greece
| | - George Trakakis
- Institute of Chemical Engineering Sciences (ICE-HT), Foundation of Research and Technology Hellas, PO Box 1414, GR-26504 Patras, Greece
| | - Charalampos Androulidakis
- Institute of Chemical Engineering Sciences (ICE-HT), Foundation of Research and Technology Hellas, PO Box 1414, GR-26504 Patras, Greece
| | - Maria Kotsidi
- Department of Chemical Engineering, University of Patras, GR-26500 Patras, Greece
- Institute of Chemical Engineering Sciences (ICE-HT), Foundation of Research and Technology Hellas, PO Box 1414, GR-26504 Patras, Greece
| | - Costas Galiotis
- Department of Chemical Engineering, University of Patras, GR-26500 Patras, Greece
- Institute of Chemical Engineering Sciences (ICE-HT), Foundation of Research and Technology Hellas, PO Box 1414, GR-26504 Patras, Greece
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Liu W, Li X, Wang Y, Xu R, Ying H, Wang L, Cheng Z, Hao Y, Chen S. Direct growth of hBN/Graphene heterostructure via surface deposition and segregation for independent thickness regulation. NANOTECHNOLOGY 2022; 33:475601. [PMID: 35970145 DOI: 10.1088/1361-6528/ac8994] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/17/2022] [Accepted: 08/14/2022] [Indexed: 06/15/2023]
Abstract
Hexagonal boron nitride/graphene (hBN/G) vertical heterostructures have attracted extensive attention, owing to the unusual physical properties for basic research and electronic device applications. Here we report a facile deposition-segregation technique to synthesize hBN/G heterostructures on recyclable platinum (Pt) foil via low pressure chemical vapor deposition. The growth mechanism of the vertical hBN/G is demonstrated to be the surface deposition of hBN on top of the graphene segregated from the Pt foil with pre-dissolved carbon. The thickness of hBN and graphene can be controlled separately from sub-monolayer to multilayer through the fine control of the growth parameters. Further investigations by Raman, scanning Kelvin probe microscopy and transmission electron microscope show that the hBN/G inclines to form a heterostructure with strong interlayer coupling and with interlayer twist angle smaller than 1.5°. This deposition-segregation approach paves a new pathway for large-scale production of hBN/G heterostructures and could be applied to synthesize of other van der Waals heterostructures.
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Affiliation(s)
- Wenyu Liu
- Department of Physics, Renmin University of China, Beijing 100872, People's Republic of China
| | - Xiuting Li
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province (IKKEM), Xiamen 361005, People's Republic of China
| | - Yushu Wang
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, People's Republic of China
- School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, Henan 450001, People's Republic of China
| | - Rui Xu
- Department of Physics, Renmin University of China, Beijing 100872, People's Republic of China
| | - Hao Ying
- Department of Physics, Renmin University of China, Beijing 100872, People's Republic of China
| | - Le Wang
- Department of Physics, Renmin University of China, Beijing 100872, People's Republic of China
| | - Zhihai Cheng
- Department of Physics, Renmin University of China, Beijing 100872, People's Republic of China
| | - Yufeng Hao
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, People's Republic of China
| | - Shanshan Chen
- Department of Physics, Renmin University of China, Beijing 100872, People's Republic of China
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Chakraborty SK, Kundu B, Nayak B, Dash SP, Sahoo PK. Challenges and opportunities in 2D heterostructures for electronic and optoelectronic devices. iScience 2022; 25:103942. [PMID: 35265814 PMCID: PMC8898921 DOI: 10.1016/j.isci.2022.103942] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2022] Open
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