Room-Temperature Ferroelectricity in 2D Metal-Tellurium-Oxyhalide Cd7Te7Cl8O17 via Selenium-Induced Selective-Bonding Growth

The Case for a Defect Genome Initiative

The Materials Genome Initiative (MGI) has streamlined the materials discovery effort by leveraging generic traits of materials, with focus largely on perfect solids. Defects such as impurities and perturbations, however, drive many attractive functional properties of materials. The rich tapestry of charge, spin, and bonding states hosted by defects are not accessible to elements and perfect crystals, and defects can thus be viewed as another class of "elements" that lie beyond the periodic table. Accordingly, a Defect Genome Initiative (DGI) to accelerate functional defect discovery for energy, quantum information, and other applications is proposed. First, major advances made under the MGI are highlighted, followed by a delineation of pathways for accelerating the discovery and design of functional defects under the DGI. Near-term goals for the DGI are suggested. The construction of open defect platforms and design of data-driven functional defects, along with approaches for fabrication and characterization of defects, are discussed. The associated challenges and opportunities are considered and recent advances towards controlled introduction of functional defects at the atomic scale are reviewed. It is hoped this perspective will spur a community-wide interest in undertaking a DGI effort in recognition of the importance of defects in enabling unique functionalities in materials.

Acoustic-Activated Se Crystalline Nanodomains at Atomically-Thin Liquid-Metal Piezoelectric Heterointerfaces for Synergistic CO2 Conversion

Acoustic-activated polarization at two-dimensional (2D) domains provide supplementary mechanisms for adjustment of empty and occupied orbitals at material heterointerfaces, activating a wide range of physicochemical applications. The piezoelectric nanodomains grown at 2D liquid-metal heterointerfaces represent a new class of polarization-dependent hybrid nanostructures with a highly challenging fabrication process. Here, the controlled growth of selenium-rich piezoelectric nanodomains on the nonpolar 2D surface of liquid Ga-based nanoparticles (NPs) enabled highly efficient and sustainable CO2 conversion. The Ga-based NPs were engulfed in carbon nanotube (CNT) frameworks. The initial hindrance effects of CNT frameworks suppressed the undesirable Ga-Se amalgamation to guarantee the suitable functions of piezocatalyst. Simultaneously, the CNT-Se mesoporous network enhances the transport and interaction of ionic species at heterointerfaces, providing unique selectivity features for CO2 conversion. Driven by acoustic energy, the multiple contributions of Ga-Se polarized heterointerfaces facilitated the piezoelectric switching and therefore increased the CO2 conversion efficiency to the value of 95.8%. The inherent compositional and functional tunability of the Ga-Se nanojunction reveal superior control over the catalyst heterointerfaces and thereby show promising potential for nanoscale applications.

2D Ferroic Materials for Nonvolatile Memory Applications

The emerging nonvolatile memory technologies based on ferroic materials are promising for producing high-speed, low-power, and high-density memory in the field of integrated circuits. Long-range ferroic orders observed in 2D materials have triggered extensive research interest in 2D magnets, 2D ferroelectrics, 2D multiferroics, and their device applications. Devices based on 2D ferroic materials and heterostructures with an atomically smooth interface and ultrathin thickness have exhibited impressive properties and significant potential for developing advanced nonvolatile memory. In this context, a systematic review of emergent 2D ferroic materials is conducted here, emphasizing their recent research on nonvolatile memory applications, with a view to proposing brighter prospects for 2D magnetic materials, 2D ferroelectric materials, 2D multiferroic materials, and their relevant devices.

Periodic Ferroelectric Stripe Domains in α-In2Se3 Nanoflakes Grown via Reverse-Flow Chemical Vapor Deposition

The two-dimensional (2D) layered semiconductor α-In₂Se₃ has aroused great interest in atomic-scale ferroelectric transistors, artificial synapses, and nonvolatile memory devices due to its distinguished 2D ferroelectric properties. We have synthesized α-In₂Se₃ nanosheets with rare in-plane ferroelectric stripe domains at room temperature on mica substrates using a reverse flow chemical vapor deposition (RFCVD) method and optimized growth parameters. This stripe domain contrast is found to be strongly correlated to the stacking of layers, and the interrelated out-of-plane (OOP) and in-plane (IP) polarization can be manipulated by mapping the artificial domain structure. The acquisition of amplitude and phase hysteresis loops confirms the OOP polarization ferroelectric property. The emergence of striped domains enriches the variety of the ferroelectric structure types and novel properties of 2D In₂Se₃. This work paves a new way for the controllable growth of van der Waals ferroelectrics and facilitates the development of novel ferroelectric memory device applications.

High-TC Two-Dimensional Ferroelectric CuCrS2 Grown via Chemical Vapor Deposition

Two-dimensional (2D) ferroelectrics have attracted intensive attention. However, the 2D ferroelectrics remain rare, and especially few of them represent high ferroelectric transition temperature (T_C), which is important for the usability of ferroelectrics. Herein, CuCrS₂ nanoflakes are synthesized by salt-assisted chemical vapor deposition and exhibit switchable ferroelectric polarization even when the thickness is downscaled to 6 nm. On the contrary, a CuCrS₂ nanoflake shows a T_C as high as ∼700 K, which can be attributed to the robust tetrahedral bonding configurations of Cu cations. Such robustness can be further clarified by a theoretically predicted high order-disorder transition barrier and structure evolution from 600 to 800 K. Additionally, the interlocked out-of-plane (OOP) and in-plane (IP) ferroelectric domains are observed and two kinds of devices based on OOP and IP polarizations are demonstrated.

Discovery of Robust Ferroelectricity in 2D Defective Semiconductor α-Ga2 Se3

2D ferroelectrics with robust polar order in the atomic-scale thickness at room temperature are needed to miniaturize ferroelectric devices and tackle challenges imposed by traditional ferroelectrics. These materials usually have polar point group structure regarding as a prerequisite of ferroelectricity. Yet, to introduce polar structure into otherwise nonpolar 2D materials for producing ferroelectricity remains a challenge. Here, by combining first-principles calculations and experimental studies, it is reported that the native Ga vacancy-defects located in the asymmetrical sites in cubic defective semiconductor α-Ga₂ Se₃ can induce polar structure. Meanwhile, the induced polarization can be switched in a moderate energy barrier. The switched polarization is observed in 2D α-Ga₂ Se₃ nanoflakes of ≈4 nm with a high switching temperature up to 450 K. Such polarization switching could arise from the displacement of Ga vacancy between neighboring asymmetrical sites by applying an electric field. This work removes the point group limit for ferroelectricity, expanding the range of 2D ferroelectrics into the native defective semiconductors.