1
|
Jing Q, Liu J, Wang H, Wang Y, Xue H, Ren S, Wang W, Zhang X, Xu Z, Fu W. Ultrasensitive Biochemical Sensing Platform Enabled by Directly Grown Graphene on Insulator. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2305363. [PMID: 38105346 DOI: 10.1002/smll.202305363] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/09/2023] [Revised: 11/06/2023] [Indexed: 12/19/2023]
Abstract
To fabricate label-free and rapid-resulting semiconducting biosensor devices incorporating graphene, it is pertinent to directly grow uniform graphene films on technologically important dielectric and semiconducting substrates. However, it has long been intuitively believed that the nonideal disordered structures formed during direct growth, and the resulted inferior electrical properties will inevitably lead to deteriorated sensing performance. Here, graphene biosensor chips are constructed based on direct plasma-enhanced chemical vapor deposition (PECVD) grown graphene on a 4-inch silicon wafer with excellent film uniformity and high yield. To surprise, optimal operations of graphene biosensors permit ultrasensitive detection of SARS-CoV-2 virus nucleocapsid protein with dilutions down to sub-femtomolar concentrations. Such impressive limit of detection (LOD) is comparable to or even outperforms that of the state-of-the-art biosensor devices based on high-quality graphene. Further noise spectral characterizations and analysis confirms that the LOD is limited by molecular diffusion and/or known interference signals such as drift and instability of the sensors, rather than the electrical merits of the graphene devices along. Hence, result sheds light on processing directly grown PECVD graphene into high-performance sensor devices with important economic benefits and social significance.
Collapse
Affiliation(s)
- Qiushi Jing
- School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Junjiang Liu
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Huanming Wang
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Yanli Wang
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Honglei Xue
- School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Shan Ren
- Beijing Youan Hospital, Capital Medical University, Beijing, 100069, China
| | - Wenjing Wang
- Beijing Youan Hospital, Capital Medical University, Beijing, 100069, China
| | - Xiaoyan Zhang
- School of Pharmaceutical Sciences, Capital Medical University, Beijing, 100069, China
| | - Zhi Xu
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Wangyang Fu
- School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| |
Collapse
|
2
|
Hou S, Xie Z, Zhang D, Yang B, Lei Y, Liang F. High-purity graphene and carbon nanohorns prepared by base-acid treated waste tires carbon via direct current arc plasma. ENVIRONMENTAL RESEARCH 2023; 238:117071. [PMID: 37669736 DOI: 10.1016/j.envres.2023.117071] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2023] [Revised: 08/30/2023] [Accepted: 09/01/2023] [Indexed: 09/07/2023]
Abstract
As the accumulation of waste tires continues to rise year by year, effectively managing and recycling these discarded materials has become an urgent global challenge. Among various potential solutions, pyrolysis stands out due to its superior environmental compatibility and remarkable efficiency in transforming waste tires into valuable products. Thus, it is considered the most potential method for disposing these tires. In this work, waste tire powder is pyrolyzed at 560 °C to yield pyrolysis carbon black, and meanwhile, the purification effects of base-acid solutions on pyrolysis carbon black are discussed. High-purity few-layer graphene flakes and carbon nanohorns are synthesized by a direct current arc plasma with H2 and N2 as buffer gases and high-purity pyrolysis carbon black as raw material. Under an H2 atmosphere, hydrogen effectively terminates the suspended carbon bonds, preventing the formation of closed structures and facilitating the expansion of graphene sheets. During the preparation of carbon nanohorns, the nitrogen atoms rapidly bond with carbon atoms, forming essential C-N bonds. This nitrogen doping promotes the formation of carbon-based five-membered and seven-membered rings and makes the graphite lamellar change in the direction of towards negative curvature. Consequently, such change facilitates the formation of conical structures, ultimately yielding the coveted carbon nanohorns. This work not only provides an economical raw material for efficient large-scale synthesis of few-layer graphene and carbon nanohorns but also broadens the intrinsic worth of pyrolysis carbon black, which is beneficial to improving the recycling value of waste tires.
Collapse
Affiliation(s)
- Shengping Hou
- Key Laboratory for Nonferrous Vacuum Metallurgy of Yunnan Province, Kunming University of Science and Technology, Kunming, 650093, China; National Engineering Research Center of Vacuum Metallurgy, Kunming University of Science and Technology, Kunming, 650093, China; Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, 650093, China
| | - Zhipeng Xie
- Key Laboratory for Nonferrous Vacuum Metallurgy of Yunnan Province, Kunming University of Science and Technology, Kunming, 650093, China; National Engineering Research Center of Vacuum Metallurgy, Kunming University of Science and Technology, Kunming, 650093, China; Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, 650093, China
| | - Da Zhang
- Key Laboratory for Nonferrous Vacuum Metallurgy of Yunnan Province, Kunming University of Science and Technology, Kunming, 650093, China; National Engineering Research Center of Vacuum Metallurgy, Kunming University of Science and Technology, Kunming, 650093, China; Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, 650093, China.
| | - Bin Yang
- Key Laboratory for Nonferrous Vacuum Metallurgy of Yunnan Province, Kunming University of Science and Technology, Kunming, 650093, China; National Engineering Research Center of Vacuum Metallurgy, Kunming University of Science and Technology, Kunming, 650093, China; Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, 650093, China
| | - Yong Lei
- Fachgebiet Angewandte Nanophysik, Institut für Physik & ZMN MacroNano (ZIK), Technische Universität Ilmenau, Ilmenau, 98693, Germany
| | - Feng Liang
- Key Laboratory for Nonferrous Vacuum Metallurgy of Yunnan Province, Kunming University of Science and Technology, Kunming, 650093, China; National Engineering Research Center of Vacuum Metallurgy, Kunming University of Science and Technology, Kunming, 650093, China; Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, 650093, China.
| |
Collapse
|
3
|
Mohanty A, Chaw Pattnayak B, Behera L, Singh A, Bhutia SK, Mohapatra S. Near-Infrared-Induced NO-Releasing Photothermal Adhesive Hydrogel with Enhanced Antibacterial Properties. ACS APPLIED BIO MATERIALS 2023; 6:4314-4325. [PMID: 37782070 DOI: 10.1021/acsabm.3c00517] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/03/2023]
Abstract
Bacterial infection and the development of antibiotic-resistant bacteria have decreased the effectiveness of traditional antibiotic treatments for wound healing. The design of a multifunctional adhesive hydrogel with antibacterial activity, self-healing properties, and on-demand removability to promote wound healing is highly desirable. In this work, a photothermal cyclodextrin with a NO-releasing moiety has been incorporated within an oxidized sodium alginate conjugated polyacrylamide (OS@PA) hydrogel to get a photothermal NO-releasing GSNOCD-OS@PA hydrogel. Such a multifunctional hydrogel has the unique feature of combined antibacterial activity as a result of a controlled photothermal effect and NO gas release under an 808 near-infrared laser. Because of oxidized sodium alginate (OSA), the hydrogel matrix easily adheres to the skin under twisted and bent states. In vitro cytotoxicity analysis against 3T3 cells showed that the hydrogels OS@PA and GSNOCD-OS@PA are noncytotoxic under laser exposure. The temperature-induced NO release by GSNOCD-OS@PA reached 31.7 mg/L when irradiated with an 808 nm laser for 10 min. The combined photothermal therapy and NO release from GSNOCD-OS@PA effectively reduced viability of both Staphylococcus aureus (Gram-positive) and Escherichia coli (Gram-negative) to 3 and 5%, respectively. Importantly, the phototherapeutic NO-releasing platform displayed effective fibroblast proliferation in a cell scratch assay.
Collapse
Affiliation(s)
- Ananya Mohanty
- Department of Chemistry, National Institute of Technology, Rourkela, Odisha 769008, India
| | - Bibek Chaw Pattnayak
- Department of Chemistry, National Institute of Technology, Rourkela, Odisha 769008, India
| | - Lingaraj Behera
- Department of Chemistry, National Institute of Technology, Rourkela, Odisha 769008, India
| | - Amruta Singh
- Department of Life Science, National Institute of Technology, Rourkela, Odisha 769008, India
| | - Sujit K Bhutia
- Department of Life Science, National Institute of Technology, Rourkela, Odisha 769008, India
| | - Sasmita Mohapatra
- Department of Chemistry, National Institute of Technology, Rourkela, Odisha 769008, India
- Centre for Nanomaterials, National Institute of Technology, Rourkela, Odisha 769008, India
| |
Collapse
|
4
|
Xin X, Chen J, Ma L, Ma T, Xin W, Xu H, Ren W, Liu Y. Grain Size Engineering of CVD-Grown Large-Area Graphene Films. SMALL METHODS 2023:e2300156. [PMID: 37075746 DOI: 10.1002/smtd.202300156] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Revised: 03/02/2023] [Indexed: 05/03/2023]
Abstract
Graphene, a single atomic layer of graphitic carbon, has attracted much attention because of its outstanding properties hold great promise for a wide range of technological applications. Large-area graphene films (GFs) grown by chemical vapor deposition (CVD) are highly desirable for both investigating their intrinsic properties and realizing their practical applications. However, the presence of grain boundaries (GBs) has significant impacts on their properties and related applications. According to the different grain sizes, GFs can be divided into polycrystalline, single-crystal, and nanocrystalline films. In the past decade, considerable progress has been made in engineering the grain sizes of GFs by modifying the CVD processes or developing some new growth approaches. The key strategies involve controlling the nucleation density, growth rate, and grain orientation. This review aims to provide a comprehensive description of grain size engineering research of GFs. The main strategies and underlying growth mechanisms of CVD-grown large-area GFs with nanocrystalline, polycrystalline, and single-crystal structures are summarized, in which the advantages and limitations are highlighted. In addition, the scaling law of physical properties in electricity, mechanics, and thermology as a function of grain sizes are briefly discussed. Finally, the perspectives for challenges and future development in this area are also presented.
Collapse
Affiliation(s)
- Xing Xin
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 130024, Changchun, China
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
| | - Jiamei Chen
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 130024, Changchun, China
| | - Laipeng Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Teng Ma
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, China
| | - Wei Xin
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 130024, Changchun, China
| | - Haiyang Xu
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 130024, Changchun, China
| | - Wencai Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Yichun Liu
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 130024, Changchun, China
| |
Collapse
|
5
|
Li C, Tian R, Chen X, Gu L, Luo Z, Zhang Q, Yi R, Li Z, Jiang B, Liu Y, Castellanos-Gomez A, Chua SJ, Wang X, Sun Z, Zhao J, Gan X. Waveguide-Integrated MoTe 2 p- i- n Homojunction Photodetector. ACS NANO 2022; 16:20946-20955. [PMID: 36413764 DOI: 10.1021/acsnano.2c08549] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Two-dimensional (2D) materials, featuring distinctive electronic and optical properties and dangling-bond-free surfaces, are promising for developing high-performance on-chip photodetectors in photonic integrated circuits. However, most of the previously reported devices operating in the photoconductive mode suffer from a high dark current or a low responsivity. Here, we demonstrate a MoTe2 p-i-n homojunction fabricated directly on a silicon photonic crystal (PC) waveguide, which enables on-chip photodetection with ultralow dark current, high responsivity, and fast response speed. The adopted silicon PC waveguide is electrically split into two individual back gates to selectively dope the top regions of the MoTe2 channel in p- or n-types. High-quality reconfigurable MoTe2 (p-i-n, n-i-p, n-i-n, p-i-p) homojunctions are realized successfully, presenting rectification behaviors with ideality factors approaching 1.0 and ultralow dark currents less than 90 pA. Waveguide-assisted MoTe2 absorption promises a sensitive photodetection in the telecommunication O-band from 1260 to 1340 nm, though it is close to MoTe2's absorption band-edge. A competitive photoresponsivity of 0.4 A/W is realized with a light on/off current ratio exceeding 104 and a record-high normalized photocurrent-to-dark-current ratio of 106 mW-1. The ultrasmall capacitance of p-i-n homojunction and high carrier mobility of MoTe2 promise a high dynamic response bandwidth close to 34.0 GHz. The proposed device geometry has the advantages of employing a silicon PC waveguide as the back gates to build a 2D material p-i-n homojunction directly and simultaneously to enhance light-2D material interaction. It provides a potential pathway to develop 2D material-based photodetectors, laser diodes, and electro-optic modulators on silicon photonic chips.
Collapse
Affiliation(s)
- Chen Li
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Ruijuan Tian
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Xiaoqing Chen
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Linpeng Gu
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Zhengdong Luo
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an710071, China
| | - Qiao Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Ruixuan Yi
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Zhiwen Li
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Biqiang Jiang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Yan Liu
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an710071, China
| | - Andres Castellanos-Gomez
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), MadridE-28049, Spain
| | - Soo-Jin Chua
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583, Singapore
- LEES Program, Singapore-MIT Alliance for Research & Technology (SMART), 1 CREATE Way, #10-01 CREATE Tower, 138602, Singapore
| | - Xiaomu Wang
- School of Electronic Science and Engineering, Nanjing University, Nanjing210093, China
| | - Zhipei Sun
- Department of Electronics and Nanoengineering and QTF Centre of Excellence, Aalto University, AaltoFI-00076, Finland
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710129, China
| |
Collapse
|