Edge Contacts to Atomically Precise Graphene Nanoribbons

Atomically Precise Graphene Nanoribbon Transistors with Long-Term Stability and Reliability

Atomically precise graphene nanoribbons (GNRs) synthesized from the bottom-up exhibit promising electronic properties for high-performance field-effect transistors (FETs). The feasibility of fabricating FETs with GNRs (GNRFETs) has been demonstrated, with ongoing efforts aimed at further improving their performance. However, their long-term stability and reliability remain unexplored, which is as important as their performance for practical applications. In this work, we fabricated short-channel FETs with nine-atom-wide armchair GNRs (9-AGNRFETs). We revealed that the on-state (ION) current performance of the 9-AGNRFETs deteriorates significantly over consecutive full transistor on and off logic cycles, which has neither been demonstrated nor previously considered. To address this issue, we deposited a thin ∼10 nm thick atomic layer deposition (ALD) layer of aluminum oxide (Al2O3) directly on these devices. The integrity, compatibility, electrical performance, stability, and reliability, of the GNRFETs before and/or after Al2O3 deposition were comprehensively studied. The results indicate that the observed decline in electrical device performance is most likely due to the degradation of contact resistance over multiple measurement cycles. We successfully demonstrated that the devices with the Al2O3 layer operate well up to several thousand continuous full cycles without any degradation. Our study offers valuable insights into the stability and reliability of GNR transistors, which could facilitate their large-scale integration into practical applications.

Hybrid Edge Results in Narrowed Band Gap: Bottom-up Liquid-Phase Synthesis of Bent N = 6/8 Armchair Graphene Nanoribbons

Scalable fabrication of graphene nanoribbons with narrow band gaps has been a nontrivial challenge. Here, we have developed a simple approach to access narrow band gaps using hybrid edge structures. Bottom-up liquid-phase synthesis of bent N = 6/8 armchair graphene nanoribbons (AGNRs) has been achieved in high efficiency through copolymerization between an o-terphenyl monomer and a naphthalene-based monomer, followed by Scholl oxidation. An unexpected 1,2-aryl migration has been discovered, which is responsible for introducing kinked structures into the GNR backbones. The N = 6/8 AGNRs have been fully characterized to support the proposed structure and show a narrow band gap and a relatively high electrical conductivity. In addition, their application in efficient gas sensing has also been demonstrated.

Long and isolated graphene nanoribbons by on-surface polymerization on Au(111)

Low electronic gap graphene nanoribbons (GNRs) are used for the fabrication of nanomaterial-based devices and, when isolated, for mono-molecular electronics experiences, for which a well-controlled length is crucial. Here, an on-surface chemistry protocol is monitored for producing long and well-isolated GNR molecular wires on an Au(111) surface. The two-step Ullmann coupling reaction is sequenced in temperature from 100 °C to 350 °C by steps of 50 °C, returning at room temperature between each step and remaining in ultrahigh vacuum conditions. After the first annealing step at 100 °C, the monomers self-organize into 2-monolayered nano-islands. Next, the Ullmann coupling reaction takes place in both 1st and 2nd layers of those nano-islands. The nano-island lateral size and shape are controlling the final GNR lengths. Respecting the above on-surface chemistry protocol, an optimal initial monomer coverage of ~1.5 monolayer produces isolated GNRs with a final length distribution reaching up to 50 nm and a low surface coverage of ~0.4 monolayer suitable for single molecule experiments.