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Zhang Y, Zhao HL, Huang S, Hossain MA, van der Zande AM. Enhancing Carrier Mobility in Monolayer MoS 2 Transistors with Process-Induced Strain. ACS NANO 2024; 18:12377-12385. [PMID: 38701373 DOI: 10.1021/acsnano.4c01457] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2024]
Abstract
Two-dimensional electronic materials are a promising candidate for beyond-silicon electronics due to their favorable size scaling of electronic performance. However, a major challenge is the heterogeneous integration of 2D materials with CMOS processes while maintaining their excellent properties. In particular, there is a knowledge gap in how thin film deposition and processes interact with 2D materials to alter their strain and doping, both of which have a drastic impact on device properties. In this study, we demonstrate how to utilize process-induced strain, a common technique extensively applied in the semiconductor industry, to enhance the carrier mobility in 2D material transistors. We systematically varied the tensile strain in monolayer MoS2 transistors by iteratively depositing thin layers of high-stress MgOx stressor. At each thickness, we combined Raman spectroscopy and transport measurements to unravel and correlate the changes in strain and doping within each transistor with their performance. The transistors displayed uniform strain distributions across their channels for tensile strains of up to 0.48 ± 0.05%, at 150 nm of stressor thickness. At higher thicknesses, mechanical instability occurred, leading to nonuniform strains. The transport characteristics systematically varied with strain, with enhancement in electron mobility at a rate of 130 ± 40% per % strain and enhancement of the channel saturation current density of 52 ± 20%. This work showcases how established CMOS technologies can be leveraged to tailor the transport in 2D transistors, accelerating the integration of 2D electronics into a future computing infrastructure.
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Affiliation(s)
- Yue Zhang
- Department of Mechanical Science and Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
| | - He Lin Zhao
- Department of Electrical and Computer Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Siyuan Huang
- Department of Mechanical Science and Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
| | - M Abir Hossain
- Department of Mechanical Science and Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Arend M van der Zande
- Department of Mechanical Science and Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
- Department of Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
- Materials Research Laboratory, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
- Holonyak Micro and Nano Technology Lab, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
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Yang Y, Xu K, Holtzman LN, Yang K, Watanabe K, Taniguchi T, Hone J, Barmak K, Rosenberger MR. Atomic Defect Quantification by Lateral Force Microscopy. ACS NANO 2024; 18:6887-6895. [PMID: 38386278 DOI: 10.1021/acsnano.3c07405] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/23/2024]
Abstract
Atomic defects in two-dimensional (2D) materials impact electronic and optoelectronic properties, such as doping and single photon emission. An understanding of defect-property relationships is essential for optimizing material performance. However, progress in understanding these critical relationships is hindered by a lack of straightforward approaches for accurate, precise, and reliable defect quantification on the nanoscale, especially for insulating materials. Here, we demonstrate that lateral force microscopy (LFM), a mechanical technique, can observe atomic defects in semiconducting and insulating 2D materials under ambient conditions. We first improve the sensitivity of LFM through consideration of cantilever mechanics. With the improved sensitivity, we use LFM to locate atomic-scale point defects on the surface of bulk MoSe2. By directly comparing LFM and conductive atomic force microscopy (CAFM) measurements on bulk MoSe2, we demonstrate that point defects observed with LFM are atomic defects in the crystal. As a mechanical technique, LFM does not require a conductive pathway, which allows defect characterization on insulating materials, such as hexagonal boron nitride (hBN). We demonstrate the ability to observe intrinsic defects in hBN and defects introduced by annealing. Our demonstration of LFM as a mechanical defect characterization technique applicable to both conductive and insulating 2D materials will enable routine defect-property determination and accelerate materials research.
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Affiliation(s)
- Yucheng Yang
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Kaikui Xu
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Luke N Holtzman
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States
| | - Kristyna Yang
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - James Hone
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Katayun Barmak
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States
| | - Matthew R Rosenberger
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
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3
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Handa T, Holbrook M, Olsen N, Holtzman LN, Huber L, Wang HI, Bonn M, Barmak K, Hone JC, Pasupathy AN, Zhu X. Spontaneous exciton dissociation in transition metal dichalcogenide monolayers. SCIENCE ADVANCES 2024; 10:eadj4060. [PMID: 38295176 PMCID: PMC10830119 DOI: 10.1126/sciadv.adj4060] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/25/2023] [Accepted: 12/28/2023] [Indexed: 02/02/2024]
Abstract
Since the seminal work on MoS2, photoexcitation in atomically thin transition metal dichalcogenides (TMDCs) has been assumed to result in excitons, with binding energies order of magnitude larger than thermal energy at room temperature. Here, we reexamine this foundational assumption and show that photoexcitation of TMDC monolayers can result in a substantial population of free charges. Performing ultrafast terahertz spectroscopy on large-area, single-crystal TMDC monolayers, we find that up to ~10% of excitons spontaneously dissociate into charge carriers with lifetimes exceeding 0.2 ns. Scanning tunneling microscopy reveals that photocarrier generation is intimately related to mid-gap defects, likely via trap-mediated Auger scattering. Only in state-of-the-art quality monolayers, with mid-gap trap densities as low as 109 cm-2, does intrinsic exciton physics start to dominate the terahertz response. Our findings reveal the necessity of knowing the defect density in understanding photophysics of TMDCs.
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Affiliation(s)
- Taketo Handa
- Department of Chemistry, Columbia University, New York, NY 10027, USA
| | - Madisen Holbrook
- Department of Physics, Columbia University, New York, NY 10027, USA
| | - Nicholas Olsen
- Department of Chemistry, Columbia University, New York, NY 10027, USA
| | - Luke N. Holtzman
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY 10027, USA
| | - Lucas Huber
- Department of Chemistry, Columbia University, New York, NY 10027, USA
| | - Hai I. Wang
- Max Planck Institute for Polymer Research, Mainz 55128, Germany
| | - Mischa Bonn
- Max Planck Institute for Polymer Research, Mainz 55128, Germany
| | - Katayun Barmak
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY 10027, USA
| | - James C. Hone
- Department of Mechanical Engineering, Columbia University, New York, NY 10027, USA
| | | | - Xiaoyang Zhu
- Department of Chemistry, Columbia University, New York, NY 10027, USA
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4
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Xu K, Holbrook M, Holtzman LN, Pasupathy AN, Barmak K, Hone JC, Rosenberger MR. Validating the Use of Conductive Atomic Force Microscopy for Defect Quantification in 2D Materials. ACS NANO 2023; 17:24743-24752. [PMID: 38095969 DOI: 10.1021/acsnano.3c05056] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/27/2023]
Abstract
Defects significantly affect the electronic, chemical, mechanical, and optical properties of two-dimensional (2D) materials. Thus, it is critical to develop a method for convenient and reliable defect quantification. Scanning transmission electron microscopy (STEM) and scanning tunneling microscopy (STM) possess the required atomic resolution but have practical disadvantages. Here, we benchmark conductive atomic force microscopy (CAFM) by a direct comparison with STM in the characterization of transition metal dichalcogenides (TMDs). The results conclusively demonstrate that CAFM and STM image identical defects, giving results that are equivalent both qualitatively (defect appearance) and quantitatively (defect density). Further, we confirm that CAFM can achieve single-atom resolution, similar to that of STM, on both bulk and monolayer samples. The validation of CAFM as a facile and accurate tool for defect quantification provides a routine and reliable measurement that can complement other standard characterization techniques.
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Affiliation(s)
- Kaikui Xu
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Madisen Holbrook
- Department of Physics, Columbia University, New York, New York 10027, United States
| | - Luke N Holtzman
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States
| | - Abhay N Pasupathy
- Department of Physics, Columbia University, New York, New York 10027, United States
| | - Katayun Barmak
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States
| | - James C Hone
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Matthew R Rosenberger
- Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
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Cheng SW, Xu D, Su H, Baxter JM, Holtzman LN, Watanabe K, Taniguchi T, Hone JC, Barmak K, Delor M. Optical Imaging of Ultrafast Phonon-Polariton Propagation through an Excitonic Sensor. NANO LETTERS 2023; 23:9936-9942. [PMID: 37852205 DOI: 10.1021/acs.nanolett.3c02897] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/20/2023]
Abstract
Hexagonal boron nitride (hBN) hosts phonon polaritons (PhP), hybrid light-matter states that facilitate electromagnetic field confinement and exhibit long-range ballistic transport. Extracting the spatiotemporal dynamics of PhPs usually requires "tour de force" experimental methods such as ultrafast near-field infrared microscopy. Here, we leverage the remarkable environmental sensitivity of excitons in two-dimensional transition metal dichalcogenides to image PhP propagation in adjacent hBN slabs. Using ultrafast optical microscopy on monolayer WSe2/hBN heterostructures, we image propagating PhPs from 3.5 K to room temperature with subpicosecond and few-nanometer precision. Excitons in WSe2 act as transducers between visible light pulses and infrared PhPs, enabling visible-light imaging of PhP transport with far-field microscopy. We also report evidence of excitons in WSe2 copropagating with hBN PhPs over several micrometers. Our results provide new avenues for imaging polar excitations over a large frequency range with extreme spatiotemporal precision and new mechanisms to realize ballistic exciton transport at room temperature.
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Affiliation(s)
- Shan-Wen Cheng
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Ding Xu
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Haowen Su
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - James M Baxter
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Luke N Holtzman
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - James C Hone
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Katayun Barmak
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States
| | - Milan Delor
- Department of Chemistry, Columbia University, New York, New York 10027, United States
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