Origins of Fermi Level Pinning for Ni and Ag Metal Contacts on Tungsten Dichalcogenides

Single-Elemental Seamless Metal-Semiconductor Junctions Based on 2D Bi or Sb: Carrier Transport and Ultrafast Dynamics Study

Two-dimensional (2D) metal-semiconductor (MS) junctions with their atomically thin nature are crucial for nanoelectronics. However, van der Waals (vdW) junctions face interfacial tunneling barriers, and lateral junctions suffer from chemical bonding disorders, both limiting carrier transport. Herein, based on the layer-dependent semiconductor-to-semimetal transition in 2D bismuthene (Bi) and antimonene (Sb), lateral seamless MS junctions with native chemical bonds are constructed to inhibit tunneling barriers and produce high-quality interfaces. These coherent junctions exhibit superior transport properties, yielding a significant current response at moderate bias as continuous covalent bonding removes vdW gaps and defects. In optoelectronic applications, the photogenerated carrier lifetimes in Bi and Sb reach 61.62 and 286.16 ns owing to weak electron-phonon coupling. Furthermore, the transport and optoelectronic properties of these MS junctions exhibit superior environmental resistance, while O2-induced trap states in Sb enhance photoconductive gain. This work provides a theoretical foundation for designing high-performance electronic and optoelectronic devices.

Fundamental Understanding of Interface Chemistry and Electrical Contact Properties of Bi and MoS2

The interface properties and thermal stability of bismuth (Bi) contacts on molybdenum disulfide (MoS2) shed light on their behavior under various deposition conditions and temperatures. The examination involves extensive techniques including X-ray photoelectron spectroscopy, scanning tunneling microscopy (STM), and scanning tunneling spectroscopy (STS). Bi contacts formed a van der Waals interface on MoS2 regardless of deposition conditions, such as ultrahigh vacuum (UHV, 3 × 10-11 mbar) and high vacuum (HV, 4 × 10-6 mbar), while the oxidation on MoS2 has been observed. However, the semimetallic properties of Bi suppress the impact of defect states, including oxidized-MoS2 and vacancies. Notably, the n-type characteristic of Bi/MoS2 remains unaffected, and no significant changes in the local density of states near the conduction band minimum are observed despite the presence of defects detected by STM and STS. As a result, the Fermi level (EF) resides below the conduction band of MoS2. The study also examines the impact of annealing on the contact interface, revealing no interface reaction between Bi and MoS2 up to 300 °C. These findings enhance our understanding of semimetal (Bi) contacts on MoS2, with implications for improving the performance and reliability of electronic devices.

Understanding the Impact of Contact-Induced Strain on the Electrical Performance of Monolayer WS2 Transistors

Two-dimensional (2D) electronics require low contact resistance (RC) to approach their fundamental limits. WS2 is a promising 2D semiconductor that is often paired with Ni contacts, but their operation is not well understood considering the nonideal alignment between the Ni work function and the WS2 conduction band. Here, we investigate the effects of contact size on nanoscale monolayer WS2 transistors and uncover that Ni contacts impart stress, which affects the WS2 device performance. The strain applied to the WS2 depends on contact size, where long (1 μm) contacts (RC ≈ 1.7 kΩ·μm) show a 78% reduction in RC compared to shorter (0.1 μm) contacts (RC ≈ 7.8 kΩ·μm). We also find that thermal annealing can relax the WS2 strain in long-contact devices, increasing RC to 8.5 kΩ·μm. These results reveal that thermo-mechanical phenomena can significantly influence 2D semiconductor-metal contacts, presenting opportunities to optimize device performance through nanofabrication and thermal budget.

Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor

Two-dimensional (2D) transition metal dichalcogenides (TMDs) allow for atomic-scale manipulation, challenging the conventional limitations of semiconductor materials. This capability may overcome the short-channel effect, sparking significant advancements in electronic devices that utilize 2D TMDs. Exploring the dimension and performance limits of transistors based on 2D TMDs has gained substantial importance. This review provides a comprehensive investigation into these limits of the single 2D-TMD transistor. It delves into the impacts of miniaturization, including the reduction of channel length, gate length, source/drain contact length, and dielectric thickness on transistor operation and performance. In addition, this review provides a detailed analysis of performance parameters such as source/drain contact resistance, subthreshold swing, hysteresis loop, carrier mobility, on/off ratio, and the development of p-type and single logic transistors. This review details the two logical expressions of the single 2D-TMD logic transistor, including current and voltage. It also emphasizes the role of 2D TMD-based transistors as memory devices, focusing on enhancing memory operation speed, endurance, data retention, and extinction ratio, as well as reducing energy consumption in memory devices functioning as artificial synapses. This review demonstrates the two calculating methods for dynamic energy consumption of 2D synaptic devices. This review not only summarizes the current state of the art in this field but also highlights potential future research directions and applications. It underscores the anticipated challenges, opportunities, and potential solutions in navigating the dimension and performance boundaries of 2D transistors.

Fermi level pinning in metal oxides: influence on photocatalysis and photoelectrochemistry

Photocatalysis and photoelectrochemical (PEC) reactions are complex processes involving both the physical properties and surface chemistry of the semiconductor photocatalyst. Their interplay applies specific limitations on the performance of different materials in light-driven reactions, often despite their optimal band structure and optical absorption. One of the ways to properly characterize the photocatalytic and PEC properties of semiconductors remains the measurement of the photopotential, which characterizes a driving force of photoinduced processes in the material. In this work, we give a general scope on the photopotential in PEC reactions that finds its origin in semiconductor physics. It is shown that the photopotential does not always play an interchangeable role with the photocurrent in comparative analysis of the photocatalytic performance of different materials. Furthermore, a correlation between the photopotential and the kinetics of methylene blue dye photocatalysis is shown for anatase-TiO2, CeO2and WO3as photocatalysts. Fermi level pinning (FLP) in the bandgap of CeO2is observed limiting the photoactivity of the compound, which is attributed to the high defectivity of CeO2. A short review is given on the possible origins of FLP in metal oxides and ways to overcome it. It is pointed out that the shift of the Fermi level after illumination of CeO2can trigger the chemical instability of the material accompanied by the FLP process.

Localized Surface Doping Induced Ultralow Contact Resistance between Metal and (Bi,Sb)2Te3 Thermoelectric Films

Micro thermoelectric devices are expected to further improve the cooling density for the temperature control of electronic devices; nevertheless, the high contact resistivity between metals and semiconductors critically limits their applications, especially in chip cooling with extremely high heat flux. Herein, based on the calculated results, a low specific contact resistivity of ∼10-7 Ω cm2 at the interface is required to guarantee a desirable cooling power density of micro devices. Thus, we developed a generally applicable interfacial modulation strategy via localized surface doping of thermoelectric films, and the feasibility of such a doping approach for both n/p-type (Bi,Sb)2Te3 films was demonstrated, which can effectively increase the surface-majority carrier concentration explained by the charge transfer mechanism. With a proper doping level, ultralow specific contact resistivities at the interfaces are obtained for n-type (6.71 × 10-8 Ω cm2) and p-type (3.70 × 10-7 Ω cm2) (Bi,Sb)2Te3 layers, respectively, which is mainly attributed to the carrier tunneling enhancement with a narrowed interfacial contact barrier width. This work provides an effective scheme to further reduce the internal resistance of micro thermoelectric coolers, which can also be extended as a kind of universal interfacial modification technique for micro semiconductor devices.

van der Waals Contact for Two-Dimensional Transition Metal Dichalcogenides

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as highly promising candidates for next-generation electronics owing to their atomically thin structures and surfaces devoid of dangling bonds. However, establishing high-quality metal contacts with TMDs presents a critical challenge, primarily attributed to their ultrathin bodies and delicate lattices. These distinctive characteristics render them susceptible to physical damage and chemical reactions when conventional metallization approaches involving "high-energy" processes are implemented. To tackle this challenge, the concept of van der Waals (vdW) contacts has recently been proposed as a "low-energy" alternative. Within the vdW geometry, metal contacts can be physically laminated or gently deposited onto the 2D channel of TMDs, ensuring the formation of atomically clean and electronically sharp contact interfaces while preserving the inherent properties of the 2D TMDs. Consequently, a considerable number of vdW contact devices have been extensively investigated, revealing unprecedented transport physics or exceptional device performance that was previously unachievable. This review presents recent advancements in vdW contacts for TMD transistors, discussing the merits, limitations, and prospects associated with each device geometry. By doing so, our purpose is to offer a comprehensive understanding of the current research landscape and provide insights into future directions within this rapidly evolving field.

Mechanism of Fermi Level Pinning for Metal Contacts on Molybdenum Dichalcogenide

The high contact resistance of transition metal dichalcogenide (TMD)-based devices is receiving considerable attention due to its limitation on electronic performance. The mechanism of Fermi level (EF) pinning, which causes the high contact resistance, is not thoroughly understood to date. In this study, the metal (Ni and Ag)/Mo-TMD surfaces and interfaces are characterized by X-ray photoelectron spectroscopy, atomic force microscopy, scanning tunneling microscopy and spectroscopy, and density functional theory systematically. Ni and Ag form covalent and van der Waals (vdW) interfaces on Mo-TMDs, respectively. Imperfections are detected on Mo-TMDs, which lead to electronic and spatial variations. Gap states appear after the adsorption of single and two metal atoms on Mo-TMDs. The combination of the interface reaction type (covalent or vdW), the imperfection variability of the TMD materials, and the gap states induced by contact metals with different weights are concluded to be the origins of EF pinning.

Electron beam-induced demetallation of Fe, Co, Ni, Cu, Zn, Pd, and Pt metalloporphyrins: insights in e-beam chemistry and metal cluster formations

Electron beams are versatile tools for nanoscale fabrication processes, however, the underlying e-beam chemistry remains in its infancy. Through operando transmission electron microscopy investigations, we elucidate a redox-driven cargo release of individual metal atoms triggered by electron beams. The chosen organic delivery molecule, tetraphenylporphyrin (TPP), proves highly versatile, forming complexes with nearly all metals from the periodic table and being easily processed in solution. A comprehensive cinematographic analysis of the dynamics of single metal atoms confirms the nearly instantaneous ejection of complexed metal atoms under an 80 kV electron beam, underscoring the system's broad versatility. Providing mechanistic insights, we employ density functional theory to support the proposed reductive demetallation pathway facilitated by secondary electrons, contributing novel perspectives to electron beam-mediated chemical reaction mechanisms. Lastly, our findings demonstrate that all seven metals investigated form nanoclusters once ejected from TPP, highlighting the method's potential for studying and developing sustainable single-atom and nanocluster catalysts.

Bridging the gap between surface physics and photonics

Use and performance criteria of photonic devices increase in various application areas such as information and communication, lighting, and photovoltaics. In many current and future photonic devices, surfaces of a semiconductor crystal are a weak part causing significant photo-electric losses and malfunctions in applications. These surface challenges, many of which arise from material defects at semiconductor surfaces, include signal attenuation in waveguides, light absorption in light emitting diodes, non-radiative recombination of carriers in solar cells, leakage (dark) current of photodiodes, and light reflection at solar cell interfaces for instance. To reduce harmful surface effects, the optical and electrical passivation of devices has been developed for several decades, especially with the methods of semiconductor technology. Because atomic scale control and knowledge of surface-related phenomena have become relevant to increase the performance of different devices, it might be useful to enhance the bridging of surface physics to photonics. Toward that target, we review some evolving research subjects with open questions and possible solutions, which hopefully provide example connecting points between photonic device passivation and surface physics. One question is related to the properties of the wet chemically cleaned semiconductor surfaces which are typically utilized in device manufacturing processes, but which appear to be different from crystalline surfaces studied in ultrahigh vacuum by physicists. In devices, a defective semiconductor surface often lies at an embedded interface formed by a thin metal or insulator film grown on the semiconductor crystal, which makes the measurements of its atomic and electronic structures difficult. To understand these interface properties, it is essential to combine quantum mechanical simulation methods. This review also covers metal-semiconductor interfaces which are included in most photonic devices to transmit electric carriers to the semiconductor structure. Low-resistive and passivated contacts with an ultrathin tunneling barrier are an emergent solution to control electrical losses in photonic devices.