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Aristov VY, Chaika AN, Molodtsova OV, Babenkov SV, Locatelli A, Menteş TO, Sala A, Potorochin D, Marchenko D, Murphy B, Walls B, Zhussupbekov K, Shvets IV. Layer-by-Layer Graphene Growth on β-SiC/Si(001). ACS NANO 2019; 13:526-535. [PMID: 30525448 DOI: 10.1021/acsnano.8b07237] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The mechanism of few-layer graphene growth on the technologically relevant cubic-SiC/Si(001) substrate is uncovered using high-resolution core-level and angle-resolved photoelectron spectroscopy, low-energy electron microscopy, and microspot low-energy electron diffraction. The thickness of the graphitic overlayer supported on the silicon carbide substrate and related changes in the surface structure are precisely controlled by monitoring the progress of the surface graphitization in situ during high-temperature graphene synthesis, using a combination of microspectroscopic techniques. The experimental data reveal gradual changes in the preferential graphene lattice orientations at the initial stages of the few-layer graphene growth on SiC(001) and can act as reference data for controllable growth of single-, double-, and triple-layer graphene on silicon carbide substrates.
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Affiliation(s)
- Victor Yu Aristov
- Deutsches Elektronen-Synchrotron DESY , Notkestrasse 85 , D-22607 Hamburg , Germany
- Institute of Solid State Physics of the Russian Academy of Sciences , 2 Academician Ossipyan Street , Chernogolovka , Moscow District 142432 , Russian Federation
| | - Alexander N Chaika
- Institute of Solid State Physics of the Russian Academy of Sciences , 2 Academician Ossipyan Street , Chernogolovka , Moscow District 142432 , Russian Federation
- CRANN, School of Physics , Trinity College Dublin , Dublin 2 , Ireland
| | - Olga V Molodtsova
- Deutsches Elektronen-Synchrotron DESY , Notkestrasse 85 , D-22607 Hamburg , Germany
- National Research University of Information Technologies, Mechanics and Optics , Kronverksky prospekt 49 , 197101 Saint Petersburg , Russian Federation
| | - Sergey V Babenkov
- Deutsches Elektronen-Synchrotron DESY , Notkestrasse 85 , D-22607 Hamburg , Germany
- Institut für Physik , Johannes Gutenberg-Universität , Staudingerweg 7 , D-55099 Mainz , Germany
| | - Andrea Locatelli
- Elettra Sincrotrone Trieste S.C.p.A. , S.S. 14 km 163.5 in AREA Science Park, I-34149 Basovizza , Trieste , Italy
| | - Tevfik Onur Menteş
- Elettra Sincrotrone Trieste S.C.p.A. , S.S. 14 km 163.5 in AREA Science Park, I-34149 Basovizza , Trieste , Italy
| | - Alessandro Sala
- Elettra Sincrotrone Trieste S.C.p.A. , S.S. 14 km 163.5 in AREA Science Park, I-34149 Basovizza , Trieste , Italy
| | - Dmitrii Potorochin
- Deutsches Elektronen-Synchrotron DESY , Notkestrasse 85 , D-22607 Hamburg , Germany
- National Research University of Information Technologies, Mechanics and Optics , Kronverksky prospekt 49 , 197101 Saint Petersburg , Russian Federation
- Institute of Experimental Physics , TU Bergakademie Freiberg , Leipziger Straße 23 , D-09599 Freiberg , Germany
| | - Dmitry Marchenko
- Helmholtz-Zentrum Berlin für Materialien und Energie , Albert-Einstein-Straße 15 , D-12489 Berlin , Germany
| | - Barry Murphy
- CRANN, School of Physics , Trinity College Dublin , Dublin 2 , Ireland
| | - Brian Walls
- CRANN, School of Physics , Trinity College Dublin , Dublin 2 , Ireland
| | | | - Igor V Shvets
- CRANN, School of Physics , Trinity College Dublin , Dublin 2 , Ireland
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Sergeeva NN, Chaika AN, Walls B, Murphy BE, Walshe K, Martin DP, Richards BDO, Jose G, Fleischer K, Aristov VY, Molodtsova OV, Shvets IV, Krasnikov SA. A photochemical approach for a fast and self-limited covalent modification of surface supported graphene with photoactive dyes. NANOTECHNOLOGY 2018; 29:275705. [PMID: 29667939 DOI: 10.1088/1361-6528/aabf11] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Herein, we report a simple method for a covalent modification of surface supported graphene with photoactive dyes. Graphene was fabricated on cubic-SiC/Si(001) wafers due to their low cost and suitability for mass-production of continuous graphene fit for electronic applications on millimetre scale. Functionalisation of the graphene surface was carried out in solution via white light induced photochemical generation of phenazine radicals from phenazine diazonium salt. The resulting covalently bonded phenazine-graphene hybrid structure was characterised by scanning tunnelling microscopy (STM) and spectroscopy (STS), Raman spectroscopy and density functional theory (DFT) calculations. It was found that phenazine molecules form an overlayer, which exhibit a short range order with a rectangular unit cell on the graphene surface. DFT calculations based on STM results reveal that molecules are standing up in the overlayer with the maximum coverage of 0.25 molecules per graphene unit cell. Raman spectroscopy and STM results show that the growth is limited to one monolayer of standing molecules. STS reveals that the phenazine-graphene hybrid structure has a band gap of 0.8 eV.
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Feng YP, Shen L, Yang M, Wang A, Zeng M, Wu Q, Chintalapati S, Chang CR. Prospects of spintronics based on 2D materials. WILEY INTERDISCIPLINARY REVIEWS-COMPUTATIONAL MOLECULAR SCIENCE 2017. [DOI: 10.1002/wcms.1313] [Citation(s) in RCA: 101] [Impact Index Per Article: 14.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/22/2022]
Affiliation(s)
- Yuan Ping Feng
- Department of Physics; National University of Singapore; Singapore
- Centre for Advanced Two-dimensional Materials; National University of Singapore; Singapore
| | - Lei Shen
- Department of Mechanical Engineering; National University of Singapore; Singapore
- Engineering Science Programme; National University of Singapore; Singapore
| | - Ming Yang
- Institute of Materials Science and Engineering; A*STAR; Singapore
| | - Aizhu Wang
- Department of Physics; National University of Singapore; Singapore
- Department of Electrical and Computer Engineering; National University of Singapore; Singapore
| | | | - Qingyun Wu
- Department of Materials Science and Engineering; National University of Singapore; Singapore
| | - Sandhya Chintalapati
- Centre for Advanced Two-dimensional Materials; National University of Singapore; Singapore
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Large positive in-plane magnetoresistance induced by localized states at nanodomain boundaries in graphene. Nat Commun 2017; 8:14453. [PMID: 28198379 PMCID: PMC5316875 DOI: 10.1038/ncomms14453] [Citation(s) in RCA: 24] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/10/2016] [Accepted: 12/30/2016] [Indexed: 11/08/2022] Open
Abstract
Graphene supports long spin lifetimes and long diffusion lengths at room temperature, making it highly promising for spintronics. However, making graphene magnetic remains a principal challenge despite the many proposed solutions. Among these, graphene with zig-zag edges and ripples are the most promising candidates, as zig-zag edges are predicted to host spin-polarized electronic states, and spin-orbit coupling can be induced by ripples. Here we investigate the magnetoresistance of graphene grown on technologically relevant SiC/Si(001) wafers, where inherent nanodomain boundaries sandwich zig-zag structures between adjacent ripples of large curvature. Localized states at the nanodomain boundaries result in an unprecedented positive in-plane magnetoresistance with a strong temperature dependence. Our work may offer a tantalizing way to add the spin degree of freedom to graphene.
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