Activating "Invisible" Glue: Using Electron Beam for Enhancement of Interfacial Properties of Graphene-Metal Contact

Critical challenges and advances in the carbon nanotube-metal interface for next-generation electronics

Next-generation electronics can no longer solely rely on conventional materials; miniaturization of portable electronics is pushing Si-based semiconductors and metallic conductors to their operational limits, flexible displays will make common conductive metal oxide materials obsolete, and weight reduction requirement in the aerospace industry demands scientists to seek reliable low-density conductors. Excellent electrical and mechanical properties, coupled with low density, make carbon nanotubes (CNTs) attractive candidates for future electronics. However, translating these remarkable properties into commercial macroscale applications has been disappointing. To fully realize their great potential, CNTs need to be seamlessly incorporated into metallic structures or have to synergistically work alongside them which is still challenging. Here, we review the major challenges in CNT-metal systems that impede their application in electronic devices and highlight significant breakthroughs. A few key applications that can capitalize on CNT-metal structures are also discussed. We specifically focus on the interfacial interaction and materials science aspects of CNT-metal structures.

High-Resolution Three-Dimensional Sculpting of Two-Dimensional Graphene Oxide by E-Beam Direct Write

On-demand switchable "additive/subtractive" patterning of two-dimensional (2D) nanomaterials is an essential capability for developing new concepts of functional nanomaterials and their device realizations. Traditionally, this is performed via a multistep process using photoresist coating and patterning by conventional photo or electron beam lithography, which is followed by bulk dry/wet etching or deposition. This limits the range of functionalities and structural topologies that can be achieved as well as increases the complexity, cost, and possibility of contamination, which are significant barriers to device fabrication from highly sensitive 2D materials. Focused electron beam-induced processing (FEBIP) enables a material chemistry/site-specific, high-resolution multimode atomic scale processing and provides unprecedented opportunities for "direct-write", single-step surface patterning of 2D nanomaterials with an in situ imaging capability. It allows for realizing a rapid multiscale/multimode approach, ranging from an atomic scale manipulation (e.g., via targeted defect introduction as an active site) to a large-area surface modification on nano- and microscales, including patterned doping and material removal/deposition with 2D (in-plane)/three-dimensional (3D) (out-of-plane) control. In this work, we report on a new capability of FEBIP for nanoscale patterning of graphene oxide via removal of oxygenated carbon moieties with no use of reactive gas required for etching complemented by carbon atom deposition using a focused electron beam. The mechanism of experimentally observed phenomena is explored using the density functional theory (DFT) calculations, revealing that interactions of e-beam that liberated reactive oxygen radicals with carbon atoms on the graphene basal plane lead to the creation of atomic vacancies in the material. The reaction byproducts are volatile carbon dioxides, which are dissociated and volatilized from the graphene oxide surface functional groups by interactions with an energetic focused electron beam. Along with selective subtractive patterning of graphene oxide, the same electron beam with increased irradiation doses can deposit out-of-plane 3D carbon nanostructures on top of or around the 2D etched pattern, thus forming a hybrid 2D/3D nanocomposite with a feature control down to a few nanometers. This in operando dual nanofabrication capability of FEBIP is unmatched by any other nanopatterning techniques and opens a new design window for forming 2D/3D complex nanostructures and functional nanodevices.

Ambipolar remote graphene doping by low-energy electron beam irradiation

We employ low-energy electron beam irradiation to induce both n- and p-doping in a graphene layer. Depending on the applied gate voltage during the irradiation, either n- or p-doping can be achieved, and by setting an appropriate irradiation protocol, any desired doping levels can be achieved.

Effect of Substrate Support on Dynamic Graphene/Metal Electrical Contacts

Recent advances in graphene and other two-dimensional (2D) material synthesis and characterization have led to their use in emerging technologies, including flexible electronics. However, a major challenge is electrical contact stability, especially under mechanical straining or dynamic loading, which can be important for 2D material use in microelectromechanical systems. In this letter, we investigate the stability of dynamic electrical contacts at a graphene/metal interface using atomic force microscopy (AFM), under static conditions with variable normal loads and under sliding conditions with variable speeds. Our results demonstrate that contact resistance depends on the nature of the graphene support, specifically whether the graphene is free-standing or supported by a substrate, as well as on the contact load and sliding velocity. The results of the dynamic AFM experiments are corroborated by simulations, which show that the presence of a stiff substrate, increased load, and reduced sliding velocity lead to a more stable low-resistance contact.

Direct writing of gold nanostructures with an electron beam: On the way to pure nanostructures by combining optimized deposition with oxygen-plasma treatment

This work presents a highly effective approach for the chemical purification of directly written 2D and 3D gold nanostructures suitable for plasmonics, biomolecule immobilisation, and nanoelectronics. Gold nano- and microstructures can be fabricated by one-step direct-write lithography process using focused electron beam induced deposition (FEBID). Typically, as-deposited gold nanostructures suffer from a low Au content and unacceptably high carbon contamination. We show that the undesirable carbon contamination can be diminished using a two-step process - a combination of optimized deposition followed by appropriate postdeposition cleaning. Starting from the common metal-organic precursor Me₂-Au-tfac, it is demonstrated that the Au content in pristine FEBID nanostructures can be increased from 30 atom % to as much as 72 atom %, depending on the sustained electron beam dose. As a second step, oxygen-plasma treatment is established to further enhance the Au content in the structures, while preserving their morphology to a high degree. This two-step process represents a simple, feasible and high-throughput method for direct writing of purer gold nanostructures that can enable their future use for demanding applications.

All-Carbon Electrode Molecular Electronic Devices Based on Langmuir-Blodgett Monolayers

Nascent molecular electronic devices, based on monolayer Langmuir-Blodgett films sandwiched between two carbonaceous electrodes, have been prepared. Tightly packed monolayers of 4-((4-((4-ethynylphenyl)ethynyl)phenyl)ethynyl)benzoic acid are deposited onto a highly oriented pyrolytic graphite electrode. An amorphous carbon top contact electrode is formed on top of the monolayer from a naphthalene precursor using the focused electron beam induced deposition technique. This allows the deposition of a carbon top-contact electrode with well-defined shape, thickness, and precise positioning on the film with nm resolution. These results represent a substantial step toward the realization of integrated molecular electronic devices based on monolayers and carbon electrodes.