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Wang J, Liu Z, Wang Q, Nie F, Chen Y, Tian G, Fang H, He B, Guo J, Zheng L, Li C, Lü W, Yan S. Ultralow Strain-Induced Emergent Polarization Structures in a Flexible Freestanding BaTiO 3 Membrane. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2401657. [PMID: 38647365 DOI: 10.1002/advs.202401657] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/16/2024] [Indexed: 04/25/2024]
Abstract
The engineering of ferroic orders, which involves the evolution of atomic structure and local ferroic configuration in the development of next-generation electronic devices. Until now, diverse polarization structures and topological domains are obtained in ferroelectric thin films or heterostructures, and the polarization switching and subsequent domain nucleation are found to be more conducive to building energy-efficient and multifunctional polarization structures. In this work, a continuous and periodic strain in a flexible freestanding BaTiO3 membrane to achieve a zigzag morphology is introduced. The polar head/tail boundaries and vortex/anti-vortex domains are constructed by a compressive strain as low as ≈0.5%, which is extremely lower than that used in epitaxial rigid ferroelectrics. Overall, this study c efficient polarization structures, which is of both theoretical value and practical significance for the development of next-generation flexible multifunctional devices.
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Affiliation(s)
- Jie Wang
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, 250022, China
- Functional Materials and Acousto-Optic Instruments Institute, School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin, 150080, China
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Zhen Liu
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Qixiang Wang
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, 250022, China
| | - Fang Nie
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Yanan Chen
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, 250022, China
| | - Gang Tian
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Hong Fang
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, 250022, China
- Functional Materials and Acousto-Optic Instruments Institute, School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin, 150080, China
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Bin He
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, 250022, China
| | - Jinrui Guo
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, 250022, China
| | - Limei Zheng
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Changjian Li
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
| | - Weiming Lü
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, 250022, China
- Functional Materials and Acousto-Optic Instruments Institute, School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin, 150080, China
| | - Shishen Yan
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, 250022, China
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China
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2
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Ren J, Tang S, Guo C, Wang J, Huang H. Surface Effect of Thickness-Dependent Polarization and Domain Evolution in BiFeO 3 Epitaxial Ultrathin Films. ACS APPLIED MATERIALS & INTERFACES 2024; 16:1074-1081. [PMID: 38149600 DOI: 10.1021/acsami.3c14561] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
With the trend of device miniaturization, ultrathin ferroelectric films are gaining more and more attention. However, understanding ferroelectricity in this nanoscale context remains a formidable challenge, primarily due to the heightened relevance of surface effects, which often leads to the loss of net polarization. Here, the influence of surface effects on the polarization as a function of thickness in ultrathin BiFeO3 films is investigated using phase-field simulations. The findings reveal a notable increase in ferroelectric polarization with increasing thickness, with a particularly discernible change occurring below the 10 nm threshold. Upon accounting for surface effects, the polarization is marginally lower than the case without such considerations, with the disparity becoming more pronounced at smaller thicknesses. Moreover, the hysteresis loop and butterfly loop of the ultrathin film were simulated, demonstrating that the ferroelectric properties of films remain robust even down to a thickness of 5 nm. Our investigations provide valuable insights into the significance of ferroelectric thin films in device miniaturization.
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Affiliation(s)
- Jing Ren
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Shiyu Tang
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Changqing Guo
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Jing Wang
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Houbing Huang
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
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3
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Guzman F, Addiego C, Waqar M, Pan X. Phase Coexistence in Multiferroic BiFeO3 Nano-needles Driven by Surface Boundary Conditions. MICROSCOPY AND MICROANALYSIS : THE OFFICIAL JOURNAL OF MICROSCOPY SOCIETY OF AMERICA, MICROBEAM ANALYSIS SOCIETY, MICROSCOPICAL SOCIETY OF CANADA 2023; 29:1678-1679. [PMID: 37613808 DOI: 10.1093/micmic/ozad067.863] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/25/2023]
Affiliation(s)
- Francisco Guzman
- Department of Materials Science and Engineering, University of California, Irvine, CA, USA
| | - Christopher Addiego
- Department of Physics and Astronomy, University of California, Irvine, CA, USA
| | - Moaz Waqar
- Department of Materials Science and Engineering, University of California, Irvine, CA, USA
| | - Xiaoqing Pan
- Department of Materials Science and Engineering, University of California, Irvine, CA, USA
- Department of Physics and Astronomy, University of California, Irvine, CA, USA
- Irvine Materials Research Institute, University of California, Irvine, CA, USA
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4
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Microstructure and physical properties of ε-Fe2O3 thin films fabricated by pulsed laser deposition. Micron 2022; 163:103359. [DOI: 10.1016/j.micron.2022.103359] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/12/2022] [Revised: 09/23/2022] [Accepted: 09/26/2022] [Indexed: 11/17/2022]
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5
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Geng WR, Guo X, Ge HL, Tang YL, Zhu Y, Wang Y, Wu B, Zou MJ, Feng YP, Ma XL. Real-Time Transformation of Flux-Closure Domains with Superhigh Thermal Stability. NANO LETTERS 2022; 22:8892-8899. [PMID: 36331549 DOI: 10.1021/acs.nanolett.2c02969] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Polar topologies have received extensive attention due to their exotic configurations and functionalities. Understanding their responsive behaviors to external stimuli, especially thermal excitation, is highly desirable to extend their applications to high temperature, which is still unclear. Here, combining in situ transmission electron microscopy and phase-field simulations, the thermal dynamics of the flux-closure domains were illuminated in PbTiO3/SrTiO3 multilayers. In-depth analyses suggested that the topological transition processes from a/c domains to flux-closure quadrants were influenced by the boundary conditions of PbTiO3 layers. The symmetrical boundary condition stabilized the flux-closure domains at higher temperature than in the asymmetrical case. Furthermore, the reversible thermal responsive behaviors of the flux-closure domains displayed superior thermal stability, which maintained robust up to 450 °C (near the Curie temperature). This work provides new insights into the dynamics of polar topologies under thermal excitation and facilitates their applications as nanoelectronics under extreme conditions.
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Affiliation(s)
- Wan-Rong Geng
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong523808, People's Republic of China
- Institute of Physics, Chinese Academy of Sciences, Beijing100190, People's Republic of China
| | - Xiangwei Guo
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016Shenyang, People's Republic of China
| | - Hua-Long Ge
- School of Materials and Energy, Yunnan University, Kunming, 650091, People's Republic of China
| | - Yun-Long Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016Shenyang, People's Republic of China
| | - Yinlian Zhu
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong523808, People's Republic of China
| | - Yujia Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016Shenyang, People's Republic of China
| | - Bo Wu
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong523808, People's Republic of China
| | - Min-Jie Zou
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong523808, People's Republic of China
- Institute of Physics, Chinese Academy of Sciences, Beijing100190, People's Republic of China
| | - Yan-Peng Feng
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong523808, People's Republic of China
- Institute of Physics, Chinese Academy of Sciences, Beijing100190, People's Republic of China
| | - Xiu-Liang Ma
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong523808, People's Republic of China
- Institute of Physics, Chinese Academy of Sciences, Beijing100190, People's Republic of China
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6
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Guo X, Zhou L, Roul B, Wu Y, Huang Y, Das S, Hong Z. Theoretical Understanding of Polar Topological Phase Transitions in Functional Oxide Heterostructures: A Review. SMALL METHODS 2022; 6:e2200486. [PMID: 35900067 DOI: 10.1002/smtd.202200486] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2022] [Revised: 06/15/2022] [Indexed: 06/15/2023]
Abstract
The exotic topological phase is attracting considerable attention in condensed matter physics and materials science over the past few decades due to intriguing physical insights. As a combination of "topology" and "ferroelectricity," the ferroelectric (polar) topological structures are a fertile playground for emergent phenomena and functionalities with various potential applications. Herein, the review starts with the universal concept of the polar topological phase and goes on to briefly discuss the important role of computational tools such as phase-field simulations in designing polar topological phases in oxide heterostructures. In particular, the history of the development of phase-field simulations for ferroelectric oxide heterostructures is highlighted. Then, the current research progress of polar topological phases and their emergent phenomena in ferroelectric functional oxide heterostructures is reviewed from a theoretical perspective, including the topological polar structures, the establishment of phase diagrams, their switching kinetics and interconnections, phonon dynamics, and various macroscopic properties. Finally, this review offers a perspective on the future directions for the discovery of novel topological phases in other ferroelectric systems and device design for next-generation electronic device applications.
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Affiliation(s)
- Xiangwei Guo
- School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
- Institute of Advanced Semiconductors and Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Hangzhou Innovation Center, Zhejiang University, Hangzhou, Zhejiang, 311200, China
- Cyrus Tang Center for Sensor Materials and Applications, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Linming Zhou
- School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Basanta Roul
- Materials Research Centre, Indian Institute of Science, Bangalore, 560012, India
- Central Research Laboratory, Bharat Electronics Limited, Bangalore, 560013, India
| | - Yongjun Wu
- School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
- Cyrus Tang Center for Sensor Materials and Applications, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Yuhui Huang
- School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Sujit Das
- Materials Research Centre, Indian Institute of Science, Bangalore, 560012, India
| | - Zijian Hong
- School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
- Cyrus Tang Center for Sensor Materials and Applications, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang, 310027, China
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7
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Geng WR, Tang YL, Zhu YL, Wang YJ, Wu B, Yang LX, Feng YP, Zou MJ, Shi TT, Cao Y, Ma XL. Magneto-Electric-Optical Coupling in Multiferroic BiFeO 3 -Based Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106396. [PMID: 35730916 DOI: 10.1002/adma.202106396] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/15/2021] [Revised: 06/17/2022] [Indexed: 06/15/2023]
Abstract
Manipulating ferroic orders and realizing their coupling in multiferroics at room temperature are promising for designing future multifunctional devices. Single external stimulation has been extensively proved to demonstrate the ability of ferroelastic switching in multiferroic oxides, which is crucial to bridge the ferroelectricity and magnetism. However, it is still challenging to directly realize multi-field-driven magnetoelectric coupling in multiferroic oxides as potential multifunctional electrical devices. Here, novel magneto-electric-optical coupling in multiferroic BiFeO3 -based thin films at room temperature mediated by deterministic ferroelastic switching using piezoresponse/magnetic force microscopy and aberration-corrected transmission electron microscopy are shown. Reversible photoinduced ferroelastic switching exhibiting magnetoelectric responses is confirmed in BiFeO3 -based films, which works at flexible strain states. This work directly demonstrates room-temperature magneto-electric-optical coupling in multiferroic films, which provides a framework for designing potential multi-field-driven magnetoelectric devices such as energy conservation memories.
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Affiliation(s)
- Wan-Rong Geng
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yun-Long Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
| | - Yin-Lian Zhu
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
| | - Yu-Jia Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
| | - Bo Wu
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Li-Xin Yang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
| | - Yan-Peng Feng
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Min-Jie Zou
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Tong-Tong Shi
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, Shenyang, 110016, China
| | - Yi Cao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, Shenyang, 110016, China
| | - Xiu-Liang Ma
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
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8
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Liu Y, Liu J, Pan H, Cheng X, Hong Z, Xu B, Chen LQ, Nan CW, Lin YH. Phase-Field Simulations of Tunable Polar Topologies in Lead-Free Ferroelectric/Paraelectric Multilayers with Ultrahigh Energy-Storage Performance. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108772. [PMID: 35034410 DOI: 10.1002/adma.202108772] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/01/2021] [Revised: 01/13/2022] [Indexed: 06/14/2023]
Abstract
Dielectric capacitors are emerging energy-storage components that require both high energy-storage density and high efficiency. The conventional approach to energy-storage enhancement is polar nanodomain engineering via chemical modification. Here, a new approach of domain engineering is proposed by exploiting the tunable polar topologies that have been observed recently in ferroelectric/paraelectric multilayer films. Using phase-field simulations, it is demonstrated that vortex, spiral, and in-plane polar structures can be stabilized in BiFeO3 /SrTiO3 (BFO/STO) multilayers by tailoring the strain state and layer thickness. Various switching dynamics are realized in these polar topologies, resulting in relaxor-ferroelectric-, antiferroelectric-, and paraelectric-like polarization behaviors, respectively. Ultrahigh energy-storage densities above 170 J cm-3 and efficiencies above 95% are achievable in STO/BFO/STO trilayers. This strategy should be generally implementable in other multilayer dielectrics and offers a new avenue to enhancing energy storage by tuning the polar topology and thus the polarization characteristics.
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Affiliation(s)
- Yiqian Liu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Junfu Liu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Hao Pan
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | | | - Zijian Hong
- Laboratory of Dielectric Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, P. R. China
| | - Ben Xu
- Graduate School of China Academy of Engineering Physics, Beijing, 100094, P. R. China
| | - Long-Qing Chen
- Department of Materials Science and Engineering and Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802-5005, USA
| | - Ce-Wen Nan
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Yuan-Hua Lin
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
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9
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Wang H, Wu H, Chi X, Li Y, Zhou C, Yang P, Yu X, Wang J, Chow GM, Yan X, Pennycook SJ, Chen J. Large-Scale Epitaxial Growth of Ultralong Stripe BiFeO 3 Films and Anisotropic Optical Properties. ACS APPLIED MATERIALS & INTERFACES 2022; 14:8557-8564. [PMID: 35129325 DOI: 10.1021/acsami.1c22248] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The controlled synthesis of large-scale ferroelectric domains with high uniformity is crucial for practical applications in next-generation nanoelectronics on the basis of their intriguing properties. Here, ultralong and highly uniform stripe domains in (110)-oriented BiFeO3 thin films are large-area synthesized through a pulsed laser deposition technique. Utilizing scanning transmission electron microscopy and piezoresponse force microscopy, we verified that the ferroelectric domains have one-dimensional 109° domains and the length of a domain is up to centimeter scale. More importantly, the ferroelectric displacement is directly determined on atomic-scale precision, further confirming the domain structure. We find that the unique one-dimensional ferroelectric domain significantly enhances the optical anisotropy. Furthermore, we demonstrate that the purely parallel domain patterns can be used to control photovoltaic current. These ultralong ferroelectric domains can be patterned into various functional devices, which may inspire research efforts to explore their properties and various applications.
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Affiliation(s)
- Han Wang
- Department of Materials Science and Engineering, National University of Singapore 117575, Singapore
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Haijun Wu
- Department of Materials Science and Engineering, National University of Singapore 117575, Singapore
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Xiao Chi
- Singapore Synchrotron Light Source (SSLS), National University of Singapore 117603, Singapore
| | - Yangyang Li
- Department of Materials Science and Engineering, National University of Singapore 117575, Singapore
| | - Chenghang Zhou
- Department of Materials Science and Engineering, National University of Singapore 117575, Singapore
| | - Ping Yang
- Singapore Synchrotron Light Source (SSLS), National University of Singapore 117603, Singapore
| | - Xiaojiang Yu
- Singapore Synchrotron Light Source (SSLS), National University of Singapore 117603, Singapore
| | - John Wang
- Department of Materials Science and Engineering, National University of Singapore 117575, Singapore
| | - Gan-Moog Chow
- Department of Materials Science and Engineering, National University of Singapore 117575, Singapore
| | - Xiaobing Yan
- College of Electron and Information Engineering, Hebei University, Baoding 071002, China
| | - Stephen John Pennycook
- Department of Materials Science and Engineering, National University of Singapore 117575, Singapore
| | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore 117575, Singapore
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10
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Feng YP, Jiang RJ, Zhu YL, Tang YL, Wang YJ, Zou MJ, Geng WR, Ma XL. Strain coupling of ferroelastic domains and misfit dislocations in [101]-oriented ferroelectric PbTiO 3 films. RSC Adv 2022; 12:20423-20431. [PMID: 35919158 PMCID: PMC9280779 DOI: 10.1039/d2ra03584g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/10/2022] [Accepted: 06/30/2022] [Indexed: 12/02/2022] Open
Abstract
High-index perovskite ferroelectric thin films possess excellent dielectric permittivity, piezoelectric coefficient, and exotic ferroelectric switching properties. They also exhibit complications in the ferroelastic domains, misfit dislocations, and strain-relaxation behaviors. Exploring the relationship of the ferroelastic domains and misfit dislocations may be of benefit for promoting the high-quality growth of these thin films. Here, the strain field of the ferroelastic domains and misfit dislocations in [101]-oriented PbTiO3/(La, Sr)(Al, Ta)O3 epitaxial thin films were investigated by advanced aberration-corrected (scanning) transmission electron microscopy (TEM) combined with geometry phase analysis (GPA). Two types of misfit dislocations with projected Burgers vectors of a[001] or a[100] on the (010) plane were elucidated, whose strain fields included in-plane strain and lattice rotation coupled with the c domains above them. Besides, it was demonstrated that the coupling was kept inside the PbTiO3 films when the film thickness was increased. Furthermore, the polarization rotation was observed in both narrow c domains and around the misfit dislocation cores, which may be attributed to the flexoelectric effect. These results are expected to provide useful information for understanding the nucleation and propagation mechanism of ferroelastic domains and for further modifying the growth of high-index ferroelectric thin films. The strain coupling of misfit dislocations and ferroelastic domains is revealed in [101]-oriented PbTiO3/(La, Sr)(Al, Ta)O3 films and flexoelectric-induced polarization rotation is observed around the misfit dislocation cores.![]()
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Affiliation(s)
- Y. P. Feng
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - R. J. Jiang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, Shenyang 110016, China
| | - Y. L. Zhu
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Y. L. Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
| | - Y. J. Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
| | - M. J. Zou
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - W. R. Geng
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - X. L. Ma
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- State Key Lab of Advanced Processing and Recycling on Non-ferrous Metals, Lanzhou University of Technology, Langongping Road 287, Lanzhou 730050, China
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11
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Geng W, Wang Y, Tang Y, Zhu Y, Wu B, Yang L, Feng Y, Zou M, Ma X. Atomic-Scale Tunable Flexoelectric Couplings in Oxide Multiferroics. NANO LETTERS 2021; 21:9601-9608. [PMID: 34766784 DOI: 10.1021/acs.nanolett.1c03352] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Flexoelectricity is an effective tool in modulating the crystallographic structures and properties of oxides for multifunctional applications. However, engineering the nonuniform strain to obtain tunable flexoelectric behaviors at the atomic scale remains an ongoing challenge in conventional substrate-imposed ferroelectric films. Here, the regulatable flexoelectric behaviors are demonstrated at atomic scale in [110]-oriented BiFeO3 thin films, which are triggered by the strain-field coupling of high-density interfacial dislocations. Using aberration-corrected scanning transmission electron microscopy, the asymmetric polarization rotation around the single dislocation is revealed, which is induced by the gradient strain fields of the single dislocation. These strain fields are highly correlated to generate huge strain gradients between neighboring dislocations, and thereby, serial flexoelectric responses are engineered as a function of dislocation spacings in thicker BiFeO3 films. This work opens a pathway for the modulation of flexoelectric responses in ferroelectrics, which could be extended to other functional materials to create exotic phenomena.
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Affiliation(s)
- Wanrong Geng
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yujia Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
| | - Yunlong Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
| | - Yinlian Zhu
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
| | - Bo Wu
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Lixin Yang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
| | - Yanpeng Feng
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Minjie Zou
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xiuliang Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
- State Key Lab of Advanced Processing and Recycling on Non-ferrous Metals, Lanzhou University of Technology, Langongping Road 287, 730050 Lanzhou, China
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12
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Dong W, Peters JJP, Rusu D, Staniforth M, Brunier AE, Lloyd-Hughes J, Sanchez AM, Alexe M. Emergent Antipolar Phase in BiFeO 3-La 0.7Sr 0.3MnO 3 Superlattice. NANO LETTERS 2020; 20:6045-6050. [PMID: 32643949 DOI: 10.1021/acs.nanolett.0c02063] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Ferroelectric-paraelectric superlattices show emerging new states, such as polar vortices, through the interplay and different energy scales of various thermodynamic constraints. By introducing magnetic coupling at BiFeO3-La0.7Sr0.3MnO3 interfaces epitaxially grown on SrTiO3 substrate, we find, for the first time in thin films, a sub-nanometer thick lamella-like BiFeO3. The emergent phase is characterized by an arrangement of a two unit cell thick lamella-like structure featuring antiparallel polarization, resulting an antiferroelectric-like structure typically associated with a morphotropic phase transition. The antipolar phase is embedded within a nominal R3c structure and is independent of the BiFeO3 thickness (4-30 unit cells). Moreover, the superlattice structure with the morphotropic phase demonstrates azimuth-independent second harmonic generation responses, indicating a change of overall symmetry mediated by a delicate spatial distribution of the emergent phase. This work enriches the understanding of a metastable state manipulated by thermodynamic constraints by lattice strain and magnetic coupling.
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Affiliation(s)
- Wen Dong
- Department of Physics, University of Warwick, Gibbet Hill Road, Coventry CV4 7AL, United Kingdom
| | - Jonathan J P Peters
- Department of Physics, University of Warwick, Gibbet Hill Road, Coventry CV4 7AL, United Kingdom
| | - Dorin Rusu
- Department of Physics, University of Warwick, Gibbet Hill Road, Coventry CV4 7AL, United Kingdom
| | - Michael Staniforth
- Department of Physics, University of Warwick, Gibbet Hill Road, Coventry CV4 7AL, United Kingdom
| | - Alan E Brunier
- Department of Physics, University of Warwick, Gibbet Hill Road, Coventry CV4 7AL, United Kingdom
| | - James Lloyd-Hughes
- Department of Physics, University of Warwick, Gibbet Hill Road, Coventry CV4 7AL, United Kingdom
| | - Ana M Sanchez
- Department of Physics, University of Warwick, Gibbet Hill Road, Coventry CV4 7AL, United Kingdom
| | - Marin Alexe
- Department of Physics, University of Warwick, Gibbet Hill Road, Coventry CV4 7AL, United Kingdom
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13
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Ma LL, Chen WJ, Wang B, Xiong WM, Zheng Y. Mechanical writing of in-plane ferroelectric vortices by tip-force and their coupled chirality. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:035402. [PMID: 31557731 DOI: 10.1088/1361-648x/ab4831] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Recent experiments have demonstrated the existence of vortex or flux-closure domains in ferroelectric nanostructures, which are attractive to develop high-density data storage and novel configurable electronic devices. However, it remains challenging to stabilize in-plane vortex or flux-closure domains in ferroelectric film for the absence of a lateral geometry confinement. Based on a 3D phase field model, here we show that stabilization of isolated or interacting in-plane vortices in ferroelectric film can be achieved via applying a mechanical tip-force. The formation of such dipole vortices is caused by a conjoint effect of the tip-force-induced depolarization effect and in-plane strain. The effects of factors like film thickness, misfit strain, tip force and temperature on the vortex formation are systematically revealed and summarized as phase diagrams. The interaction between tip-induced vortices is also investigated. It is found that as the two tips get closer than the critical distance, the two initially isolated vortices become coupled, with identical or opposite chirality, depending on the distance between the two tips. A maximum data storage density of isolated in-plane vortices in ferroelectric thin film is estimated to be ~1 Tb in-2. Our work thus demonstrates a mechanical strategy to stabilize dipole vortices, and provides a comprehensive insight into the characteristics of ferroelectric film under a mechanical tip force.
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Affiliation(s)
- L L Ma
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, 510275 Guangzhou, People's Republic of China. Micro and Nano Physics and Mechanics Research Laboratory, School of Physics, Sun Yat-sen University, 510275 Guangzhou, People's Republic of China
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14
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Estandía S, Sánchez F, Chisholm MF, Gázquez J. Rotational polarization nanotopologies in BaTiO 3/SrTiO 3 superlattices. NANOSCALE 2019; 11:21275-21283. [PMID: 31696194 DOI: 10.1039/c9nr08050c] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Ferroelectrics are characterized by domain structures as are other ferroics. At the nanoscale though, ferroelectrics may exhibit non-trivial or exotic polarization configurations under proper electrostatic and elastic conditions. These polar states may possess emerging properties not present in the bulk compounds and are promising for technological applications. Here, the observation of rotational polarization topologies at the nanoscale by means of aberration-corrected scanning transmission electron microscopy is reported in BaTiO3/SrTiO3 superlattices grown on cubic SrTiO3(001). The transition from a highly homogeneous polarization state to the formation of rotational nanodomains has been achieved by controlling the superlattice period while maintaining compressive clamping of the superlattice to the cubic SrTiO3 substrate. The nanodomains revealed in BaTiO3 prove that its nominal tetragonal structure also allows rotational polar textures.
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Affiliation(s)
- Saúl Estandía
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Barcelona, Spain.
| | - Florencio Sánchez
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Barcelona, Spain.
| | - Matthew F Chisholm
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Tennessee 37831-6064, USA
| | - Jaume Gázquez
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Barcelona, Spain.
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15
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Tian G, Yang W, Chen D, Fan Z, Hou Z, Alexe M, Gao X. Topological domain states and magnetoelectric properties in multiferroic nanostructures. Natl Sci Rev 2019; 6:684-702. [PMID: 34691923 PMCID: PMC8291546 DOI: 10.1093/nsr/nwz100] [Citation(s) in RCA: 25] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/06/2019] [Revised: 07/07/2019] [Accepted: 07/12/2019] [Indexed: 11/21/2022] Open
Abstract
Multiferroic nanostructures have been attracting tremendous attention over the past decade, due to their rich cross-coupling effects and prospective electronic applications. In particular, the emergence of some exotic phenomena in size-confined multiferroic systems, including topological domain states such as vortices, center domains, and skyrmion bubble domains, has opened a new avenue to a number of intriguing physical properties and functionalities, and thus underpins a wide range of applications in future nanoelectronic devices. It is also highly appreciated that nano-domain engineering provides a pathway to control the magnetoelectric properties, which is promising for future energy-efficient spintronic devices. In recent years, this field, still in its infancy, has witnessed a rapid development and a number of challenges too. In this article, we shall review the recent advances in the emergent domain-related exotic phenomena in multiferroic nanostructures. Specific attention is paid to the topological domain structures and related novel physical behaviors as well as the electric-field-driven magnetic switching via domain engineering. This review will end with a discussion of future challenges and potential directions.
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Affiliation(s)
- Guo Tian
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Wenda Yang
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Deyang Chen
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Zhen Fan
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Zhipeng Hou
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Marin Alexe
- Department of Physics, University of Warwick, Coventry CV4 7AL, UK
| | - Xingsen Gao
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
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