Tunable Valley Polarized Plasmon-Exciton Polaritons in Two-Dimensional Semiconductors

Strong coupling of second harmonic generation scattering spectrum in a diexcitionic nanosystem

Diexcitonic strong coupling between quantum emitters and localized surface plasmon has attracted more attention recently because it can provide multiple qubit states for future quantum information technology at room temperature. In a strong coupling regime, nonlinear optical effects can offer new routes for developing quantum devices, but it is rarely reported. In this paper, we established the hybrid system consisting of J-aggregates-WS₂-cuboid Au@Ag nanorods, which can realize diexcitonic strong coupling and second harmonic generation (SHG). We find that multimode strong coupling has been achieved not only in the fundamental frequency scattering spectrum but also in the SHG scattering spectrum. SHG scattering spectrum shows three plexciton branches, similar to the splitting in the fundamental frequency scattering spectrum. Furthermore, the SHG scattering spectrum can be modulated by tuning the armchair direction of the crystal lattice, pump polarization direction, and plasmon resonance frequency, which makes our system very promising in the quantum device at room temperature. Moreover, we develop coupled nonlinear harmonic oscillator model theory to explain the nonlinear diexcitonic strong coupling mechanism. The calculated results by the finite element method accord well with our theory. The nonlinear optical properties of the diexcitonic strong coupling can provide potential applications such as quantum manipulation, entanglement, and integrated logic devices.

Theoretical Quantum Model of Two-Dimensional Propagating Plexcitons

When plasmonic excitations of metallic interfaces and nanostructures interact with electronic excitations in semiconductors, new states emerge that hybridize the characteristics of the uncoupled states. The engendered properties make these hybrid states appealing for a broad range of applications, ranging from photovoltaic devices to integrated circuitry for quantum devices. Here, through quantum modeling, the coupling of surface plasmon polaritons and mobile two-dimensional excitons such as those in atomically thin semiconductors is examined with emphasis on the case of strong coupling. Our model shows that at around the energy crossing of the dispersion relationships of the uncoupled species, they strongly interact and polariton states --propagating plexcitons -- emerge. The temporal evolution of the system where surface plasmon polaritons are continuously injected into the system is simulated to gain initial insight on potential experimental realizations of these states. The results show a steady state that is dominated by the lower-energy polariton. The study theoretically further establishes the possible existence of propagating plexcitons in atomically thin semiconductors and provides important guidance for the experimental detection and characterization of such states for a wide range of optoelectronic technologies.

Engineering Plasmonic Environments for 2D Materials and 2D-Based Photodetectors

Two-dimensional layered materials are considered ideal platforms to study novel small-scale optoelectronic devices due to their unique electronic structures and fantastic physical properties. However, it is urgent to further improve the light–matter interaction in these materials because their light absorption efficiency is limited by the atomically thin thickness. One of the promising approaches is to engineer the plasmonic environment around 2D materials for modulating light–matter interaction in 2D materials. This method greatly benefits from the advances in the development of nanofabrication and out-plane van der Waals interaction of 2D materials. In this paper, we review a series of recent works on 2D materials integrated with plasmonic environments, including the plasmonic-enhanced photoluminescence quantum yield, strong coupling between plasmons and excitons, nonlinear optics in plasmonic nanocavities, manipulation of chiral optical signals in hybrid nanostructures, and the improvement of the performance of optoelectronic devices based on composite systems.

Bandgap control in two-dimensional semiconductors via coherent doping of plasmonic hot electrons

Bandgap control is of central importance for semiconductor technologies. The traditional means of control is to dope the lattice chemically, electrically or optically with charge carriers. Here, we demonstrate a widely tunable bandgap (renormalisation up to 550 meV at room-temperature) in two-dimensional (2D) semiconductors by coherently doping the lattice with plasmonic hot electrons. In particular, we integrate tungsten-disulfide (WS₂) monolayers into a self-assembled plasmonic crystal, which enables coherent coupling between semiconductor excitons and plasmon resonances. Accompanying this process, the plasmon-induced hot electrons can repeatedly fill the WS₂ conduction band, leading to population inversion and a significant reconstruction in band structures and exciton relaxations. Our findings provide an effective measure to engineer optical responses of 2D semiconductors, allowing flexibilities in design and optimisation of photonic and optoelectronic devices.

Valley manipulation in monolayer transition metal dichalcogenides and their hybrid systems: status and challenges

Recently, the emerging conceptual valley-related devices have attracted much attention due to the progress on generating, controlling, and detecting the valley degree of freedom in the transition metal dichalcogenide (TMD) monolayers. In general, it is known that achieving valley degree of freedom with long valley lifetime is crucial in the implementation of valleytronic devices. Here, we provide a brief introduction of the basic understandings of valley degree of freedom. We as well review the recent experimental advancement in the modulation of valley degree of freedom. The strategies include optical/magnetic/electric field tuning, moiré patterns, plasmonic metasurface, defects and strain engineering. In addition, we summarize the corresponding mechanisms, which can help to obtain large degree of polarization and long valley lifetimes in monolayer TMDs. Based on these methods, two-dimensional valley-optoelectronic systems based on TMD heterostructures can be constructed, providing opportunities for such as the new paradigm in data processing and transmission. Challenges and perspectives on the development of valleytronics are highlighted as well.

Selectively Depopulating Valley-Polarized Excitons in Monolayer MoS2 by Local Chirality in Single Plasmonic Nanocavity

Transition metal dichalcogenides, whose valley degrees of freedom are characterized by the degree of circular polarization (DCP) of the photoluminescence, draw broad interests due to their potential applications in information storage and processing. However, this DCP is usually low at room temperature due to the phonon-assisted intervalley scattering, severely degrading the fidelity of the valley-stored signals. Therefore, achieving high DCP at room temperature is vital for valley-encoded nanophotonic devices. In this work, we demonstrate a high DCP of 48.7% at room temperature by embedding monolayer MoS₂ into a compact plasmonic nanocavity. Such a high DCP is proven to originate from the prominent chiral Purcell effect owing to the degeneracy-lifted circularly polarized local density of states in the nanocavity. In addition, the DCP can be further manipulated by an in situ plasmon-scanned technique. This highly compact system provides possibilities for developing versatile valley-encoded light-emitting devices at room temperature.

Polarization-Dependent Optical Properties and Optoelectronic Devices of 2D Materials

The development of optoelectronic devices requires breakthroughs in new material systems and novel device mechanisms, and the demand recently changes from the detection of signal intensity and responsivity to the exploration of sensitivity of polarized state information. Two-dimensional (2D) materials are a rich family exhibiting diverse physical and electronic properties for polarization device applications, including anisotropic materials, valleytronic materials, and other hybrid heterostructures. In this review, we first review the polarized-light-dependent physical mechanism in 2D materials, then present detailed descriptions in optical and optoelectronic properties, involving Raman shift, optical absorption, and light emission and functional optoelectronic devices. Finally, a comment is made on future developments and challenges. The plethora of 2D materials and their heterostructures offers the promise of polarization-dependent scientific discovery and optoelectronic device application.