Magnetism and Optical Anisotropy in van der Waals Antiferromagnetic Insulator CrOCl

Enhanced ferromagnetism, perpendicular magnetic anisotropy and high Curie temperature in the van der Waals semiconductor CrSeBr through strain and doping

Two-dimensional (2D) intrinsic van der Waals ferromagnetic semiconductor (FMS) crystals with strong perpendicular magnetic anisotropy and high Curie temperature (TC) are highly desirable and hold great promise for applications in ultrahigh-speed spintronic devices. Here, we systematically investigated the effects of a biaxial strain ranging between -8% and +8% and doping with different charge carrier concentrations (≤0.7 electrons/holes per unit cell) on the electronic structure, magnetic properties, and TC of monolayer CrSeBr by combining first-principles calculations and Monte Carlo (MC) simulations. Our results demonstrate that the pristine CrSeBr monolayer possesses an intrinsic FMS character with a band gap as large as 1.03 eV, an in-plane magnetic anisotropy of 0.131 meV per unit cell, and a TC as high as 164 K. At a biaxial strain of only 0.8% and a hole density of 5.31 × 1013 cm-2, the easy magnetization axis direction transitions from in-plane to out-of-plane. More interestingly, the magnetic anisotropy energy and TC of monolayer CrSeBr are further enhanced to 1.882 meV per unit cell and 279 K, respectively, under application of a tensile biaxial strain of 8%, and the monolayer retains its semiconducting properties throughout the entire range of investigated strains. It was also found that upon doping monolayer CrSeBr with holes with a concentration of 0.7 holes per unit cell, the perpendicular magnetic anisotropy and TC are increased to 0.756 meV per cell and 235 K, respectively, and the system tends to become metallic. These findings will help to advance the application of 2D intrinsic ferromagnetic materials in spintronic devices.

Hole-Doping-Induced Perpendicular Magnetic Anisotropy and High Curie Temperature in a CrSX (X = Cl, Br, I) Semiconductor Monolayer

A large perpendicular magnetic anisotropy and a high Curie temperature (TC) are crucial for the application of two-dimensional (2D) intrinsic ferromagnets to spintronic devices. Here, we investigated the electronic and magnetic properties of carrier-doped Van der Waals layered CrSX (X = Cl, Br, I) ferromagnets using first-principles calculations. It was found that hole doping can increase the magnitude of the magnetic anisotropy energy (MAE) and change the orientation of the easy magnetization axis at small doping amounts of 2.37 × 1013, 3.98 × 1012, and 3.33 × 1012/cm2 for CrSCl, CrSBr, and CrSI monolayers, respectively. The maximum values of the MAE reach 57, 133, and 1597 μeV/u.c. for the critical hole-doped CrSCl, CrSBr, and CrSI with spin orientation along the (001) direction, respectively. Furthermore, the Fermi energy level of lightly hole-doped CrSX (X = Cl, Br, I) moves into the spin-up valence band, leading to the CrSX (X = Cl, Br, I) magnetic semiconductor monolayer becoming first a half-metal and then a metal. In addition, the TC can also be increased up to 305, 317, and 345 K for CrSCl, CrSBr, and CrSI monolayers at doping amounts of 5.94 × 1014, 5.78 × 1014, and 5.55 × 1014/cm2, respectively. These properties suggest that the hole-doping process can render 2D CrSX (X = Cl, Br, I) monolayers remarkable materials for application to electrically controlled spintronic devices.

Interlayer coupling controlled electronic and magnetic properties of two-dimensional VOCl2/PtTe2 van der Waals heterostructure

The coupling of hetero monolayers into van der Waals (vdW) heterostructures has become an effective way to obtain tunable physical and chemical properties of two dimensional (2D) materials. In this work, based on first principles calculations, we systematically explore the electronic and magnetic properties of a 2D VOCl2/PtTe2 heterostructure. Our results indicate that the ground state of the VOCl2/PtTe2 heterostructure is a ferromagnetic (FM) metal with large magnetic anisotropy energy, among which, the VOCl2 "sublayer" shows FM half metallic properties while the PtTe2 "sublayer" shows nonmagnetic metallic properties. The Curie temperature (TC) of VOCl2/PtTe2 is 111 K. Moreover, the FM-antiferromagnetic (AFM) phase transition can be obtained under biaxial strain. Our work provides an effective way to improve the performance of 2D monolayers in nano-electronic devices.

Two-dimensional ferroelastic and ferromagnetic NiOX (X = Cl and Br) with half-metallicity and a high Curie temperature

Two-dimensional (2D) multiferroic materials with distinctive properties, such as half-metallicity, high Curie temperature (TC), and magnetoelastic coupling, hold potential applications in novel nanoscale spintronic devices, but they are rare. Using density functional theory (DFT) calculations and evolutionary algorithms, we identify new types of 2D NiOX (X = F, Cl and Br) monolayers that are stable in energy, dynamics, thermodynamics, and mechanics. Among them, NiOF is an indirect-gap antiferromagnetic (AFM) semiconductor, while NiOCl and NiOBr are half-metallic materials with ferromagnetic (FM) ordering with a TC of 671 and 692 K and in-plane magnetic anisotropy energies (MAEs) of 541 and 609 μeV per Ni along the x-axis and y-axis, respectively. Notably, ferroelasticity is another important feature of NiOCl and NiOBr monolayers with energy barriers of 234.0 and 151.5 meV per atom, respectively. Moreover, the in-plane magnetic easy axis is strongly coupled to the lattice direction. The coexistence of high ferromagnetism, ferroelasticity, half-metallicity, and magnetoelastic coupling renders NiOCl and NiOBr monolayers great potential for future nanodevices.

Strain-controlled spin transport in a two-dimensional (2D) nanomagnet

Semiconductors with controllable electronic transport coupled with magnetic behaviour, offering programmable spin arrangements present enticing potential for next generation intelligent technologies. Integrating and linking these two properties has been a long standing challenge for material researchers. Recent discoveries in two-dimensional (2D) magnet shows an ability to tune and control the electronic and magnetic phases at ambient temperature. Here, we illustrate controlled spin transport within the magnetic phase of the 2D semiconductor CrOBr and reveal a substantial connection between its magnetic order and charge carriers. First, we systematically analyse the strain-induced electronic behaviour of 2D CrOBr using density functional theory calculations. Our study demonstrates the phase transition from a magnetic semiconductor → half metal → magnetic metal in the material under strain application, creating intriguing spin-resolved conductance with 100% spin polarisation and spin-injection efficiency. Additionally, the spin-polarised current-voltage (I-V) trend displayed conductance variations with high strain-assisted tunability and a peak-to-valley ratio as well as switching efficiency. Our study reveals that CrOBr can exhibit highly anisotropic behaviour with perfect spin filtering, offering new implications for strain engineered magneto-electronic devices.

Recent advances in 2D van der Waals magnets: Detection, modulation, and applications

The emergence of two-dimensional (2D) van der Waals magnets provides an exciting platform for exploring magnetism in the monolayer limit. Exotic quantum phenomena and significant potential for spintronic applications are demonstrated in 2D magnetic crystals and heterostructures, which offer unprecedented possibilities in advanced formation technology with low power and high efficiency. In this review, we summarize recent advances in 2D van der Waals magnetic crystals. We focus mainly on van der Waals materials of truly 2D nature with intrinsic magnetism. The detection methods of 2D magnetic materials are first introduced in detail. Subsequently, the effective strategies to modulate the magnetic behavior of 2D magnets (e.g., Curie temperature, magnetic anisotropy, magnetic exchange interaction) are presented. Then, we list the applications of 2D magnets in the spintronic devices. We also highlight current challenges and broad space for the development of 2D magnets in further studies.

Giant Magnetocaloric Effect in Magnets Down to the Monolayer Limit

2D magnets can potentially revolutionize information technology, but their potential application to cooling technology and magnetocaloric effect (MCE) in a material down to the monolayer limit remain unexplored. Herein, it is revealed through multiscale calculations the existence of giant MCE and its strain tunability in monolayer magnets such as CrX3 (X = F, Cl, Br, I), CrAX (A = O, S, Se; X = F, Cl, Br, I), and Fe3 GeTe2 . The maximum adiabatic temperature change (Δ T ad max $\Delta T_{{\rm{ad}}}^{\max }$ ), maximum isothermal magnetic entropy change, and specific cooling power in monolayer CrF3 are found as high as 11 K, 35 µJ m-2  K-1 , and 3.5 nW cm-2 under a magnetic field of 5 T, respectively. A 2% biaxial and 5% a-axis uniaxial compressive strain can remarkably increaseΔ T ad max $\Delta T_{{\rm{ad}}}^{\max }$ of CrCl3 and CrOF by 230% and 37% (up to 15.3 and 6.0 K), respectively. It is found that large net magnetic moment per unit area favors improved MCE. These findings advocate the giant-MCE monolayer magnets, opening new opportunities for magnetic cooling at nanoscale.

Magnetization reversal through an antiferromagnetic state

Magnetization reversal in ferro- and ferrimagnets is a well-known archetype of non-equilibrium processes, where the volume fractions of the oppositely magnetized domains vary and perfectly compensate each other at the coercive magnetic field. Here, we report on a fundamentally new pathway for magnetization reversal that is mediated by an antiferromagnetic state. Consequently, an atomic-scale compensation of the magnetization is realized at the coercive field, instead of the mesoscopic or macroscopic domain cancellation in canonical reversal processes. We demonstrate this unusual magnetization reversal on the Zn-doped polar magnet Fe2Mo3O8. Hidden behind the conventional ferrimagnetic hysteresis loop, the surprising emergence of the antiferromagnetic phase at the coercive fields is disclosed by a sharp peak in the field-dependence of the electric polarization. In addition, at the magnetization reversal our THz spectroscopy studies reveal the reappearance of the magnon mode that is only present in the pristine antiferromagnetic state. According to our microscopic calculations, this unusual process is governed by the dominant intralayer coupling, strong easy-axis anisotropy and spin fluctuations, which result in a complex interplay between the ferrimagnetic and antiferromagnetic phases. Such antiferro-state-mediated reversal processes offer novel concepts for magnetization control, and may also emerge for other ferroic orders.

Strain-dependent magnetic ordering switching in 2D AFM ternary V-based chalcogenide monolayers

The lack of macroscopic magnetic moments makes antiferromagnetic materials promising candidates for high-speed spintronic devices. The 2D ternary V-based chalcogenides (VXYSe4; X, Y = Al, Ga) monolayers are investigated based on the density-functional theory and Monte Carlo simulations. The results reveal that the Néel temperature of the VGa2Se4 monolayer is 18 K with zigzag2-antiferromagnetic (AFM) spin ordering. Also, the magnetic ordering of V ions in VAl2Se4 and VAlGaSe4 monolayers prefer zigzag1-AFM coupling with Néel temperature of 47 K and 33 K, respectively. The magnetic anisotropy calculations demonstrate that the easy magnetization axis of the VXYSe4 monolayers is parallel to the y axis. In addition, the VXYSe4 monolayers can be adjusted from the AFM state to the ferromagnetic (FM) state under biaxial stretching, which can be attributed to the competition between d-p-d superexchange and d-d direct exchange caused by the variation of bond length. The transition temperature of VXYSe4 monolayers can be elevated above room temperature with the help of compression strain. In particular, the in-plane magnetic anisotropy is a robust characteristic regardless of the magnitude of the applied biaxial strain. These explorations not only enrich the family of AFM monolayers with excellent stability but also provide distinctive ideas for the performance control of AFM materials and their applications in nanodevices.

Spin-Lattice Coupled Metamagnetism in Frustrated van der Waals Magnet CrOCl

The long-range magnetic ordering in frustrated magnetic systems is stabilized by coupling magnetic moments to various degrees of freedom, for example, by enhancing magnetic anisotropy via lattice distortion. Here, the unconventional spin-lattice coupled metamagnetic properties of atomically-thin CrOCl, a van der Waals antiferromagnet with inherent magnetic frustration rooted in the staggered square lattice, are reported. Using temperature- and angle-dependent tunneling magnetoconductance (TMC), in complementary with magnetic torque and first-principles calculations, the antiferromagnetic (AFM)-to-ferrimagnetic (FiM) metamagnetic transitions (MTs) of few-layer CrOCl are revealed to be triggered by collective magnetic moment flipping rather than the established spin-flop mechanism, when external magnetic field (H) enforces a lattice reconstruction interlocked with the five-fold periodicity of the FiM phase. The spin-lattice coupled MTs are manifested by drastic jumps in TMC, which show anomalous upshifts at the transition thresholds and persist much higher above the AFM Néel temperature. While the MTs exhibit distinctive triaxial anisotropy, reflecting divergent magnetocrystalline anisotropy of the c-axis AFM ground state, the resulting FiM phase has an a-c easy plane in which the magnetization axis is freely rotated by H. At the 2D limit, such a field-tunable FiM phase may provide unique opportunities to explore exotic emergent phenomena and novel spintronics devices.

Two-dimensional ferromagnetic semiconductors of monolayer BiXO3 (X = Ru, Os) with direct band gaps, high Curie temperatures, and large magnetic anisotropy

Two-dimensional (2D) ferromagnetic semiconductors are highly promising candidates for spintronics, but are rarely reported with direct band gaps, high Curie temperatures (T_c), and large magnetic anisotropy. Using first-principles calculations, we predict that two ferromagnetic monolayers, BiXO₃ (X = Ru, Os), are such materials with a direct band gap of 2.64 and 1.69 eV, respectively. Monte Carlo simulations reveal that the monolayers show high T_c beyond 400 K. Interestingly, both BiXO₃ monolayers exhibit out-of-plane magnetic anisotropy, with magnetic anisotropy energy (MAE) of 1.07 meV per Ru for BiRuO₃ and 5.79 meV per Os for BiOsO₃. The estimated MAE for the BiOsO₃ sheet is one order of magnitude larger than that for the CrI₃ monolayer (685 μeV per Cr). Based on the second-order perturbation theory, it is revealed that the large MAE of the monolayers BiRuO₃ and BiOsO₃ is mainly contributed by the matrix element differences between d_xy and d_x²-y² and d_yz and d_z² orbitals. Importantly, the ferromagnetism remains robust in 2D BiXO₃ under compressive strain, while undergoing a ferromagnetic to antiferromagnetic transition under tensile strain. The intriguing electronic and magnetic properties make BiXO₃ monolayers promising candidates for nanoscale electronics and spintronics.

Giant electrically tunable magnon transport anisotropy in a van der Waals antiferromagnetic insulator

Anisotropy is a manifestation of lowered symmetry in material systems that have profound fundamental and technological implications. For van der Waals magnets, the two-dimensional (2D) nature greatly enhances the effect of in-plane anisotropy. However, electrical manipulation of such anisotropy as well as demonstration of possible applications remains elusive. In particular, in-situ electrical modulation of anisotropy in spin transport, vital for spintronics applications, has yet to be achieved. Here, we realized giant electrically tunable anisotropy in the transport of second harmonic thermal magnons (SHM) in van der Waals anti-ferromagnetic insulator CrPS₄ with the application of modest gate current. Theoretical modeling found that 2D anisotropic spin Seebeck effect is the key to the electrical tunability. Making use of such large and tunable anisotropy, we demonstrated multi-bit read-only memories (ROMs) where information is inscribed by the anisotropy of magnon transport in CrPS₄. Our result unveils the potential of anisotropic van der Waals magnons for information storage and processing.

Electric-Field Control of Spin Polarization above Room Temperature in Single-Layer A-Type Antiferromagnetic Semiconductor

Two-dimensional (2D) antiferromagnets have drawn great interest for absence of stray fields in antiferromagnetic (AFM) spintronics. However, it remains challenging to manipulate their spin polarization above room temperature for practical applications. Herein, a general strategy is reported to realize the control of spin polarization above room temperature in 2D A-type AFM semiconductors by external electric field based on first-principles calculations, exemplified by transition metal monohalide MnCl and carbide MXenes Cr₂CX₂ (X = F, Cl, OH). It shows that 100% spin polarization can be induced around Fermi level with spin splitting gap related to the spatial distribution of spin density in real space. Meanwhile, the Neél temperature of 2D MnCl and Cr₂CF₂ remains above room temperature under external electric field up to 0.6 V/Å. This study exhibits the potential for application of 2D AFM semiconductors in electric-field-controlled spintronics.

Probing the Néel-Type Antiferromagnetic Order and Coherent Magnon-Exciton Coupling in Van Der Waals VPS3

2D van der Waals (vdW) antiferromagnets have received intensive attention due to their terahertz resonance, multilevel magnetic-order states, and ultrafast spin dynamics. However, accurately identifying their magnetic configuration still remains a challenge owing to the lack of net magnetization and insensitivity to external fields. In this work, the Néel-type antiferromagnetic (AFM) order in 2D antiferromagnet VPS₃ with the out-of-plane anisotropy, which is demonstrated by the temperature-dependent spin-phonon coupling and second-harmonic generation (SHG), is experimentally probed. This long-range AFM order even persists at the ultrathin limit. Furthermore, strong interlayer exciton-magnon coupling (EMC) upon the Néel-type AFM order is detected based on the monolayer WSe₂ /VPS₃ heterostructure, which induces an enhanced excitonic state and further certifies the Néel-type AFM order of VPS₃ . The discovery provides optical routes as the novel platform to study 2D antiferromagnets and promotes their potential applications in magneto-optics and opto-spintronic devices.

Unconventional correlated insulator in CrOCl-interfaced Bernal bilayer graphene

The realization of graphene gapped states with large on/off ratios over wide doping ranges remains challenging. Here, we investigate heterostructures based on Bernal-stacked bilayer graphene (BLG) atop few-layered CrOCl, exhibiting an over-1-GΩ-resistance insulating state in a widely accessible gate voltage range. The insulating state could be switched into a metallic state with an on/off ratio up to 10⁷ by applying an in-plane electric field, heating, or gating. We tentatively associate the observed behavior to the formation of a surface state in CrOCl under vertical electric fields, promoting electron-electron (e-e) interactions in BLG via long-range Coulomb coupling. Consequently, at the charge neutrality point, a crossover from single particle insulating behavior to an unconventional correlated insulator is enabled, below an onset temperature. We demonstrate the application of the insulating state for the realization of a logic inverter operating at low temperatures. Our findings pave the way for future engineering of quantum electronic states based on interfacial charge coupling.

Two-Dimensional Violet Phosphorus P11: A Large Band Gap Phosphorus Allotrope

The discovery of novel large band gap two-dimensional (2D) materials with good stability and high carrier mobility will innovate the next generation of electronics and optoelectronics. A new allotrope of 2D violet phosphorus P₁₁ was synthesized via a salt flux method in the presence of bismuth. Millimeter-sized crystals of violet-P₁₁ were collected after removing the salt flux with DI water. From single-crystal X-ray diffraction, the crystal structure of violet-P₁₁ was determined to be in the monoclinic space group C2/c (no. 15) with unit cell parameters of a = 9.166(6) Å, b = 9.121(6) Å, c = 21.803(14)Å, β = 97.638(17)°, and a unit cell volume of 1807(2) ų. The structure differences between violet-P₁₁, violet-P₂₁, and fibrous-P₂₁ are discussed. The violet-P₁₁ crystals can be mechanically exfoliated down to a few layers (∼6 nm). Photoluminescence and Raman measurements reveal the thickness-dependent nature of violet-P₁₁, and exfoliated violet-P₁₁ flakes were stable in ambient air for at least 1 h, exhibiting moderate ambient stability. The bulk violet-P₁₁ crystals exhibit excellent stability, being stable in ambient air for many days. The optical band gap of violet-P₁₁ bulk crystals is 2.0(1) eV measured by UV-Vis and electron energy-loss spectroscopy measurements, in agreement with density functional theory calculations which predict that violet-P₁₁ is a direct band gap semiconductor with band gaps of 1.8 and 1.9 eV for bulk and monolayer, respectively, and with a high carrier mobility. This band gap is the largest among the known single-element 2D layered bulk crystals and thus attractive for various optoelectronic devices.

The Bulk van der Waals Layered Magnet CrSBr is a Quasi-1D Material

Correlated quantum phenomena in one-dimensional (1D) systems that exhibit competing electronic and magnetic order are of strong interest for the study of fundamental interactions and excitations, such as Tomonaga-Luttinger liquids and topological orders and defects with properties completely different from the quasiparticles expected in their higher-dimensional counterparts. However, clean 1D electronic systems are difficult to realize experimentally, particularly for magnetically ordered systems. Here, we show that the van der Waals layered magnetic semiconductor CrSBr behaves like a quasi-1D material embedded in a magnetically ordered environment. The strong 1D electronic character originates from the Cr-S chains and the combination of weak interlayer hybridization and anisotropy in effective mass and dielectric screening, with an effective electron mass ratio of m_X^e/m_Y^e ∼ 50. This extreme anisotropy experimentally manifests in strong electron-phonon and exciton-phonon interactions, a Peierls-like structural instability, and a Fano resonance from a van Hove singularity of similar strength to that of metallic carbon nanotubes. Moreover, because of the reduced dimensionality and interlayer coupling, CrSBr hosts spectrally narrow (1 meV) excitons of high binding energy and oscillator strength that inherit the 1D character. Overall, CrSBr is best understood as a stack of weakly hybridized monolayers and appears to be an experimentally attractive candidate for the study of exotic exciton and 1D-correlated many-body physics in the presence of magnetic order.

First-principles prediction of two-dimensional MnOX (X = Cl, Br) monolayers: the half-metallic multiferroics with magnetoelastic coupling

Two-dimensional (2D) multiferroics have attracted extensive attention in recent years due to their potential applications in nano-electrical devices such as nonvolatile memory and magnetic sensors. However, 2D multiferroic materials with intrinsic ferromagnetism and ferroelasticity are very rare and most of them have low Curie temperatures. Herein, by performing the first-principles calculations, we systematically investigated the electronic structure and the magnetic properties of the MnOX (X = Cl, Br) monolayers. We demonstrated that the MnOX monolayers were intrinsic half-metallic multiferroics with the coexistence of ferromagnetism and ferroelasticity. The Curie temperatures evaluated from Monte Carlo simulations based on the Heisenberg model were about 220 K for MnOCl and 210 K for MnOBr, which could be further enhanced to 235 K and 230 K by 3% tensile strain. Moreover, their ground states exhibited significant big magnetic anisotropy energies of about 0.59 meV along the z-axis for MnOCl and 0.62 meV along the y-axis for MnOBr per unit cell. The in-plane magnetic easy axis of the MnOBr monolayer can be modulated by the ferroelastic switching due to the robust magnetoelastic coupling. These findings highlight that the MnOX monolayers (with 100% spin polarizability and high Curie temperature) are good candidates for next-generation multifunctional nanodevices.

A Three-Stage Magnetic Phase Transition Revealed in Ultrahigh-Quality van der Waals Bulk Magnet CrSBr

van der Waals (vdW) magnets are receiving ever-growing attention nowadays due to their significance in both fundamental research on low-dimensional magnetism and potential applications in spintronic devices. The high crystalline quality of vdW magnets is the key to maintaining intrinsic magnetic and electronic properties, especially when exfoliated down to the two-dimensional limit. Here, ultrahigh-quality air-stable vdW CrSBr crystals are synthesized using the direct solid-vapor synthesis method. The high single crystallinity and spatial homogeneity have been thoroughly evidenced at length scales from submm to atomic resolution by X-ray diffraction, second harmonic generation, and scanning transmission electron microscopy. More importantly, specific heat measurements of ultrahigh-quality CrSBr crystals show three thermodynamic anomalies at 185, 156, and 132 K, revealing a stage-by-stage development of the magnetic order upon cooling, which is also corroborated with the magnetization and transport results. Our ultrahigh-quality CrSBr can further be exfoliated down to monolayers and bilayers easily, providing the building blocks of heterostructures for spintronic and magneto-optoelectronic applications.

Chemical Exfoliation toward Magnetic 2D VOCl Monolayers

The diversification of magnetic two-dimensional (2D) materials holds the key to the further development of advanced technologies, such as spintronic devices and efficient data storage. However, the search for intrinsic magnetism down to the 2D limit is severely limited by the ability to reliably exfoliate large, air-stable nanosheets. Chemical exfoliation, a relatively underutilized method for delamination, offers many advantages, including a high degree of adaptability and higher yields of uniformly exfoliated materials. van der Waals (vdW) materials, in particular the family of transition-metal oxyhalides, are ideal candidates for chemical exfoliation due to their large interlayer spacing and the wide variety of interesting magnetic properties they exhibit. In this study, we employ a chemical exfoliation method to delaminate the layered antiferromagnet vanadium oxychloride (VOCl) down to the monolayer limit. The resulting nansoheets have lateral sizes of up to 20 μm, are air-stable, and can be easily isolated. Magnetic characterization was performed throughout the exfoliation process, tracking the changes in magnetic behavior among bulk VOCl, its lithiated intercalate, and the restacked nanosheet pellet. The results from this work demonstrate the potential of chemical exfoliation, along with illustrating the effects of low dimensionality on magnetic properties.

2D FeOCl: A Highly In-Plane Anisotropic Antiferromagnetic Semiconductor Synthesized via Temperature-Oscillation Chemical Vapor Transport

2D van der Waals (vdW) transition-metal oxyhalides with low symmetry, novel magnetism, and good stability provide a versatile platform for conducting fundamental research and developing spintronics. Antiferromagnetic FeOCl has attracted significant interest owing to its unique semiconductor properties and relatively high Néel temperature. Herein, good-quality centimeter-scale FeOCl single crystals are controllably synthesized using the universal temperature-oscillation chemical vapor transport (TO-CVT) method. The crystal structure, bandgap, and anisotropic behavior of the 2D FeOCl are explored in detail. The absorption spectrum and electrical measurements reveal that 2D FeOCl is a semiconductor with an optical bandgap of ≈2.1 eV and a resistivity of ≈10^-1  Ω m at 295 K, and the bandgap increases with decreasing thickness. Strong in-plane optical and electrical anisotropies are observed in 2D FeOCl flakes, and the maximum resistance anisotropic ratio reaches 2.66 at 295 K. Additionally, the lattice vibration modes are studied through temperature-dependent Raman spectra and first-principles density functional calculations. A significant decrease in the Raman frequencies below the Néel temperature is observed, which results from the strong spin-phonon coupling effect in 2D FeOCl. This study provides a high-quality low-symmetry vdW magnetic candidate for miniaturized spintronics.

Tuning the Exchange Bias Effect in 2D van der Waals Ferro-/Antiferromagnetic Fe3 GeTe2 /CrOCl Heterostructures

The exchange bias effect is extremely expected in 2D van der Waals (vdW) ferromagnetic (FM)/antiferromagnetic (AFM) heterostructures due to the high-quality interface. CrOCl possesses strong magnetic anisotropy at 2D limit, and is an ideal antiferromagnet for constructing FM/AFM heterostructures to explore the exchange bias effect. Here, the exchange bias effect in Fe₃ GeTe₂ (FGT)/CrOCl heterostructures through both anomalous Hall effect (AHE) and reflective magnetic circular dichroism (RMCD) measurements is studied. In the AHE measurements, the exchange bias field (H_EB ) at 3 K exhibits a distinct increase from ≈150 Oe to ≈450 Oe after air exposure, and such variation is attributed to the formation of an oxidized layer in FGT by analyzing the cross-sectional microstructure. The H_EB is successfully tuned by changing the FGT/CrOCl thickness and the cooling field. Furthermore, a larger H_EB of ≈750 Oe at 1.7 K in FGT/CrOCl heterostructure through RMCD measurements is observed, and it is proposed that the larger H_EB in RMCD measurements is related to the distribution of uncompensated spins at the interface. This work reveals several intriguing phenomena of the exchange bias effect in 2D vdW magnetic systems, which paves the way for the study of related spintronic devices.

Magnetic Phase Transitions and Magnetoelastic Coupling in a Two-Dimensional Stripy Antiferromagnet

Materials with a quasi-one-dimensional stripy magnetic order often exhibit low crystal and magnetic symmetries, thus allowing the presence of various energy coupling terms and giving rise to macroscopic interplay between spin, charge, and phonon. In this work, we performed optical, electrical and magnetic characterizations combined with first-principles calculations on a van der Waals antiferromagnetic insulator chromium oxychloride (CrOCl). We detected the subtle phase transition behaviors of exfoliated CrOCl under varying temperature and magnetic field and clarified its controversial spin structures. We found that the antiferromagnetism and its air stability persist down to few-layer samples, making it a promising candidate for future 2D spintronic devices. Additionally, we verified the magnetoelastic coupling effect in CrOCl, allowing for the potential manipulation of the magnetic states via electric field or strain. These virtues of CrOCl provide us with an ideal platform for fundamental research on spin-charge, spin-phonon coupling, and spin-interactions.

Recent Developments in van der Waals Antiferromagnetic 2D Materials: Synthesis, Characterization, and Device Implementation

Magnetism in two dimensions is one of the most intriguing and alluring phenomena in condensed matter physics. Atomically thin 2D materials have emerged as a promising platform for exploring magnetic properties, leading to the development of essential technologies such as supercomputing and data storage. Arising from spin and charge dynamics in elementary particles, magnetism has also unraveled promising advances in spintronic devices and spin-dependent optoelectronics and photonics. Recently, antiferromagnetism in 2D materials has received extensive attention, leading to significant advances in their understanding and emerging applications; such materials have zero net magnetic moment yet are internally magnetic. Several theoretical and experimental approaches have been proposed to probe, characterize, and modulate the magnetic states efficiently in such systems. This Review presents the latest developments and current status for tuning the magnetic properties in distinct 2D van der Waals antiferromagnets. Various state-of-the-art optical techniques deployed to investigate magnetic textures and dynamics are discussed. Furthermore, device concepts based on antiferromagnetic spintronics are scrutinized. We conclude with remarks on related challenges and technological outlook in this rapidly expanding field.

Recent progress on emergent two-dimensional magnets and heterostructures

Intrinsic two-dimensional (2D) magnetic materials own strong long-range magnetism while their characteristics of the ultrathin thickness and smooth surface provide an ideal platform for manipulating the magnetic properties at 2D limit. This makes them to be potential candidates in various spintronic applications compared to their corresponding bulk counterparts. The discovery of magnetic ordering in 2D CrI₃and Gr₂Ge₂Te₆nanostructures stimulated tremendous research interest in both experimental and theoretical studies on various intrinsic magnets at 2D limit. This review gives a comprehensive overview of the recent progress on the emergent 2D magnets and heterostructures. Firstly, several kinds of typical 2D magnetic materials discovered in the last few years and their fabrication methods are summarized in detail. Secondly, the current strategies for manipulating magnetic properties in 2D materials are further discussed. Then, the recent advances on the construction of representative van der Waals magnetic heterostructures and their respective performance are provided. With the hope of motivating the researchers in this area, we finally offered the challenges and outlook on 2D magnetism.

Synthesis of emerging 2D layered magnetic materials

van der Waals atomically thin magnetic materials have been recently discovered. They have attracted enormous attention as they present unique magnetic properties, holding potential to tailor spin-based device properties and enable next generation data storage and communication devices. To fully understand the magnetism in two-dimensions, the synthesis of 2D materials over large areas with precise thickness control has to be accomplished. Here, we review the recent advancements in the synthesis of these materials spanning from metal halides, transition metal dichalcogenides, metal phosphosulphides, to ternary metal tellurides. We initially discuss the emerging device concepts based on magnetic van der Waals materials including what has been achieved with graphene. We then review the state of the art of the synthesis of these materials and we discuss the potential routes to achieve the synthesis of wafer-scale atomically thin magnetic materials. We discuss the synthetic achievements in relation to the structural characteristics of the materials and we scrutinise the physical properties of the precursors in relation to the synthesis conditions. We highlight the challenges related to the synthesis of 2D magnets and we provide a perspective for possible advancement of available synthesis methods to respond to the need for scalable production and high materials quality.

van der Waals Magnets: Material Family, Detection and Modulation of Magnetism, and Perspective in Spintronics

van der Waals (vdW) materials exhibit great potential in spintronics, arising from their excellent spin transportation, large spin-orbit coupling, and high-quality interfaces. The recent discovery of intrinsic vdW antiferromagnets and ferromagnets has laid the foundation for the construction of all-vdW spintronic devices, and enables the study of low-dimensional magnetism, which is of both technical and scientific significance. In this review, several representative families of vdW magnets are introduced, followed by a comprehensive summary of the methods utilized in reading out the magnetic states of vdW magnets. Thereafter, it is shown that various electrical, mechanical, and chemical approaches are employed to modulate the magnetism of vdW magnets. Finally, the perspective of vdW magnets in spintronics is discussed and an outlook of future development direction in this field is also proposed.

First-principles prediction of a room-temperature ferromagnetic and ferroelastic 2D multiferroic MnNX (X = F, Cl, Br, and I)

Two-dimensional (2D) multiferroic materials have great potential applications in multifunctional nanoelectronics devices. Here, we construct a series of stable and isolated monolayers as 2D manganese nitrohalides MnNX (X = F, Cl, Br, and I) and systematically investigate the structural, electronic and magnetic properties using first-principles and Monte Carlo simulations. We find that ground states simultaneously show in-plane ferroelasticity and room-temperature ferromagnetic properties. We also reveal that the in-plane magnetic anisotropy can be tunable by the uniaxial ferroelastic strain. Our results will provide significant implications for future experiments and the design of new functional materials at the nanoscale.

Tunable phase transitions and high photovoltaic performance of two-dimensional In2Ge2Te6 semiconductors

Ultrathin semiconductors with great electrical and photovoltaic performance hold tremendous promise for fundamental research and applications in next-generation electronic devices. Here, we report new 2D direct-bandgap semiconductors, namely mono- and few-layer In₂Ge₂Te₆, with a range of desired properties from ab initio simulations. We suggest that 2D In₂Ge₂Te₆ samples should be highly stable and can be experimentally fabricated by mechanical exfoliation. They are predicted to exhibit extraordinary optical absorption and high photovoltaic conversion efficiency (≥31.8%), comparable to the most efficient single-junction GaAs solar cell. We reveal that, thanks to the presence of van Hove singularities in the band structure, unusual quantum-phase transitions could be induced in monolayers via electrostatic doping. Furthermore, taking bilayer In₂Ge₂Te₆ as a prototypical system, we demonstrate the application of van der Waals pressure as a promising strategy to tune the electronic and stacking property of 2D crystals. Our work creates exciting opportunities to explore various quantum phases and atomic stacking, as well as potential applications of 2D In₂Ge₂Te₆ in future nanoelectronics.

Near Degeneracy of Magnetic Phases in Two-Dimensional Chromium Telluride with Enhanced Perpendicular Magnetic Anisotropy

The discovery of atomically thin van der Waals magnets (e.g., CrI₃ and Cr₂Ge₂Te₆) has triggered a renaissance in the study of two-dimensional (2D) magnetism. Most of the 2D magnetic compounds discovered so far host only one single magnetic phase unless the system is at a phase boundary. In this work, we report the near degeneracy of magnetic phases in ultrathin chromium telluride (Cr₂Te₃) layers with strong perpendicular magnetic anisotropy highly desired for stabilizing 2D magnetic order. Single-crystalline Cr₂Te₃ nanoplates with a trigonal structure (space group P3̅1c) were grown by chemical vapor deposition. The bulk magnetization measurements suggest a ferromagnetic (FM) order with an enhanced perpendicular magnetic anisotropy, as evidenced by a coercive field as large as ∼14 kOe when the field is applied perpendicular to the basal plane of the thin nanoplates. Magneto-optical Kerr effect studies confirm the intrinsic ferromagnetism and characterize the magnetic ordering temperature of individual nanoplates. First-principles density functional theory calculations suggest the near degeneracy of magnetic orderings with a continuously varying canting from the c-axis FM due to their comparable energy scales, explaining the zero-field kink observed in the magnetic hysteresis loops. Our work highlights Cr₂Te₃ as a promising 2D Ising system to study magnetic phase coexistence and switches for ultracompact information storage and processing.

Anisotropic thermoelectric effect and field-effect devices in epitaxial bismuthene on Si (111)

This experimental study reveals intriguing thermoelectric effects and devices in epitaxial bismuthene, two-dimensional (2D) bismuth with thickness ⩽30 nm, on Si (111). Bismuthene exhibits interesting anisotropic Seebeck coefficients varying 2-5 times along different crystal orientations, implying the existence of a puckered atomic structure like black phosphorus. An absolute value of Seebeck coefficient up to 237 μV K^-1 sets a record for elemental Bi ever measured to the best of our knowledge. Electrical conductivity of bismuthene can reach up to 4.6 × 10⁴ S m^-1, which is sensitive to thickness and magnetic field. Along with a desired low thermal conductivity ∼1.97 W m^-1 K that is 20% of its bulk form, the first experimental zT value at room temperature for bismuthene was measured ∼10^-2, which is much higher than many other VA Xenes and comparable to its bulk compounds. Above results suggest a mixed buckled and puckered Bi atomic structure for epitaxial 2D bismuth on Si (111). Our work paves the way to explore potential applications, such as heat flux sensor, energy converting devices and so on for bismuthene.

Prediction of room-temperature ferromagnetism in a two-dimensional direct band gap semiconductor

Two-dimensional (2D) ferromagnetic (FM) semiconductors with a direct electronic band gap have recently drawn much attention due to their promising potential for spintronic and magneto-optical applications. However, the Curie temperature (T_C) of recently synthesized 2D FM semiconductors is too low (∼45 K) and a room-temperature 2D direct band gap FM semiconductor has never been reported, which hinders the development for practical magneto-optical applications. Here, we show that through isovalent alloying, one can increase the T_C of a 2D FM semiconductor up to room temperature and simultaneously turn it from an indirect to a direct band gap semiconductor. Using the first-principles calculations, we predict that the alloyed CrMoS₂Br₂ monolayer is a direct band gap semiconductor with a T_C of ∼360 K, whereas the pristine CrSBr monolayer is an indirect band gap semiconductor with a T_C of ∼180 K. These findings provide a promising pathway to realize 2D direct band gap FM semiconductors with T_C above room temperature, which will greatly stimulate theoretical and experimental interest in future spintronic and magneto-optical applications.

Bi-stimuli assisted engineering and control of magnetic phase in monolayer CrOCl

Magnetic phase control and room temperature magnetic stability in two-dimensional (2D) materials are indispensable for realising advanced spintronic and magneto-electronic functions. Our current work employs first-principles calculations to comprehensively study the magnetic behaviour of 2D CrOCl, uncovering the impact of strain and electric field on the material. Our studies have revealed that uniaxial strain leads to the feasibility of room temperature ferromagnetism in the layer and also detected the occurrence of a ferromagnetic → antiferromagnetic phase transition in the system, which is anisotropic along the armchair and zigzag directions. Beyond such a strain effect, the coupling of strain and electric field leads to a remarkable enhancement of the Curie temperature (T_c) ∼ 450 K in CrOCl. These predictions based on our detailed simulations show the prospect of multi-stimuli magnetic phase control, which could have great significance for realizing magneto-mechanical sensors.