Engineering Silicon to Porous Silicon and Silicon Nanowires by Metal-Assisted Chemical Etching: Role of Ag Size and Electron-Scavenging Rate on Morphology Control and Mechanism

Single-Nanoparticle-Based Nanomachining for Fabrication of a Uniform Nanochannel Sensor

The structure of nanomaterials and nanodevices determines their functionality and applications. A single uniform nanochannel with a high aspect ratio is an attractive structure due to its unique rigid structures, easy preparation, and diverse pore structures and it holds significant promising importance in fields such as nanopore sensing and nanomanufacturing. Although the metal-nanoparticle-assistant silicon etching technique can produce uniform nanochannels, however, the fabrication of single through nanochannels remains a challenge thus far. A simple and versatile strategy is developed that allows for the retention of individual gold nanoparticle on a substrate, enabling single-nanoparticle nanomachining. This method involves three steps: the formation of a carbon protective layer on individual nanoparticles via electron-beam irradiation, selective removal of unprotected nanoparticles using a corrosive agent, and subsequent elimination of the carbon layer. This enables the fabrication of a single submillimeter-long uniform through nanochannel in the silicon wafer, which can be employed for nanopore sensing and shape-based nanoparticle distinguishing. The developed method can also facilitate single-nanoparticle studies and nanomachining for a broad application in materials science, electronics, micro/nano-optics, and catalysis.

Spectromicroscopy Studies of Silicon Nanowires Array Covered by Tin Oxide Layers

The composition and atomic and electronic structure of a silicon nanowire (SiNW) array coated with tin oxide are studied at the spectromicroscopic level. SiNWs are covered from top to down with a wide bandgap tin oxide layer using a metal-organic chemical vapor deposition technique. Results obtained via scanning electron microscopy and X-ray diffraction showed that tin-oxide nanocrystals, 20 nm in size, form a continuous and highly developed surface with a complex phase composition responsible for the observed electronic structure transformation. The "one spot" combination, containing a chemically sensitive morphology and spectroscopic data, is examined via photoemission electron microscopy in the X-ray absorption near-edge structure spectroscopy (XANES) mode. The observed spectromicroscopy results showed that the entire SiNW surface is covered with a tin(IV) oxide layer and traces of tin(II) oxide and metallic tin phases. The deviation from stoichiometric SnO₂ leads to the formation of the density of states sub-band in the atop tin oxide layer bandgap close to the bottom of the SnO₂ conduction band. These observations open up the possibility of the precise surface electronic structures estimation using photo-electron microscopy in XANES mode.

Porous Microneedles for Therapy and Diagnosis: Fabrication and Challenges

The use of microneedles (MNs), an innovative transdermal technology, enables efficient, convenient, painless, and controlled-release drug delivery. Porous microneedles (pMNs), special MNs with abundant interconnected pores that can produce capillary action, are gaining increasing attention as a novel MNs technology. pMNs can actively adsorb bioactive ingredients from solutions of drugs or vaccines for in vivo delivery or from interstitial skin fluids (ISFs) for wearable and point-of-care testing (POCT) products. Different pore sizes and porosities of pMNs can be achieved with different materials and preparation processes, which makes the application of pMNs adaptable to multiple scenarios. In addition, easier and faster detection will be accomplished by the smart combination of pMNs with other detection technologies. This paper aims to summarize the recent research progress of pMNs, focusing on the influence of various materials and their corresponding preparation methods on its structure and function display, discussing the key issues and looking forward to the future development.

Wafer-Scale Fabrication and Transfer of Porous Silicon Films as Flexible Nanomaterials for Sensing Application

Flexible sensors are highly advantageous for integration in portable and wearable devices. In this work, we propose and validate a simple strategy to achieve whole wafer-size flexible SERS substrate via a one-step metal-assisted chemical etching (MACE). A pre-patterning Si wafer allows for PSi structures to form in tens of microns areas, and thus enables easy detachment of PSi film pieces from bulk Si substrates. The morphology, porosity, and pore size of PS films can be precisely controlled by varying the etchant concentration, which shows obvious effects on film integrity and wettability. The cracks and self-peeling of Psi films can be achieved by the drying conditions after MACE, enabling transfer of Psi films from Si wafer to any substrates, while maintaining their original properties and vertical alignment. After coating with a thin layer of silver (Ag), the rigid and flexible PSi films before and after transfer both show obvious surface-enhanced Raman scattering (SERS) effect. Moreover, flexible PSi films SERS substrates have been demonstrated with high sensitivity (down to 2.6 × 10⁻⁹ g/cm²) for detection of methyl parathion (MPT) residues on a curved apple surface. Such a method provides us with quick and high throughput fabrication of nanostructured materials for sensing, catalysis, and electro-optical applications.

Wafer-Scale Fabrication of Silicon Nanocones via Controlling Catalyst Evolution in All-Wet Metal-Assisted Chemical Etching

All-wet metal-assisted chemical etching (MACE) is a simple and low-cost method to fabricate one-dimensional Si nanostructures. However, it remains a challenge to fabricate Si nanocones (SiNCs) with this method. Here, we achieved wafer-scale fabrication of SiNC arrays through an all-wet MACE process. The key to fabricate SiNCs is to control the catalyst evolution from deposition to etching stages. Different from conventional MACE processes, large-size Ag particles by solution deposition are obtained through increasing AgNO₃ concentration or extending the reaction time in the seed solution. Then, the large-size Ag particles are simultaneously etched during the Si etching process in an etching solution with a high H₂O₂ concentration due to the accelerated cathode process and inhibited anode process in Ag/Si microscopic galvanic cells. The successive decrease of Ag particle sizes causes the proportionate increase of diameters of the etched Si nanostructures, forming SiNC arrays. The SiNC arrays exhibit a stronger light-trapping ability and better photoelectrochemical performance compared with Si nanowire arrays. SiNCs were fabricated by using n-type 1-10 Ω cm Si(100) wafers in this work. Though the specific experimental conditions for preparing SiNCs may differ when using different Si wafers, the summarized diagram will still provide valuable guidance for morphology control of Si nanostructures in MACE processes.

Pulse Electrodeposition of Palladium Nanoparticles onto Silicon in DMSO

The deposition of palladium nanoparticles (PdNPs) on the surface of n-Si (100) substrate by pulsed electrolysis in dimethyl sulfoxide (DMSO) solutions of Pd(NO3)2 was investigated. It has been shown that nonaqueous medium (DMSO) contributes the Pd (II) recovery at high cathode potential values avoiding side processes to occur. In combination with the pulse mode, this allows the deposition of spherical PdNPs with their uniform distribution on the silicon surface. We established that the main factors influencing the geometry of PdNPs are the value of the cathode potential, the concentration of palladium ions in solution, and the number of pulse-pause cycles. It is shown that with increasing Ecathode value there is a tendency to increase the density of silicon surface filling with nanoparticles. As the concentration of Pd(NO3)2 increases from 1 to 6 mM, the density of silicon surface filling with PdNPs and their average size also increase. We found that with increasing the number of pulse-pause cycles, there is a predominant growth of nanoparticles in diameter, which causes 2D filling of the substrate surface.