Dislocation-induced nanoparticle decoration on a GaN nanowire

Crystal phase evolution in kinked GaN nanowires

Seed-catalysed growth has been proved to be an ideal method to selectively tune the crystal structure of III-V nanowires along its growth axis. However, few results on relevant nitride NWs have been reported. In this study, we demonstrate the growth of epitaxial kinked wurtzite (WZ)/zinc-blende (ZB) heterostructure GaN NW arrays under the oxygen rich condition using hydride vapour-liquid-solid vapour phase epitaxy (VLS-HVPE). The typical GaN crystal includes WZ and ZB phases throughout the whole NW structure. A detailed structural analysis indicates that a stacking faults free zone was occasionally observed near the NW tips and in the relatively long kinked 〈11-23〉 directions segments (>200 nm). Furthermore, some NWs (<5%) develop phase boundaries, resulting in kinking and crystal phase evolution. A layer-by-layer growth mode was proposed to explain the crystal phase evolution along the phase boundaries. This study provides new insights into the controlled growth of wurtzite (WZ)/zinc-blende (ZB) heterostructure GaN NW.

Investigation of catalyst-assisted growth of nonpolar GaN nanowires via a modified HVPE process

The growth of nonpolar GaN nanowires along the [101[combining macron]0] orientation has been demonstrated via a modified hydride vapor phase epitaxy (HVPE) process using GaCl3 and NH3 as precursors. The morphology and structure evolution as a dependence of the growth parameters was thoroughly studied to elucidate the nucleation and crystallization of nonpolar GaN nanowires. It has been found that the V/III ratio and temperature are critically important for the formation of high-quality nonpolar GaN nanowires. The existence of a cubic GaN (c-GaN) transition layer between the Au catalyst and hexagonal GaN (h-GaN) nonpolar nanowires was demonstrated by high-resolution transmission electron microscopy (HRTEM) characterization, which plays an important role in the initial nucleation of nonpolar GaN nanowires and the formation of stacking faults (SFs) in the GaN nanowires grown at lower temperature. Optical investigations show that the defect-related visible emission of nonpolar GaN nanowires is closely related to the growth process and can be selectively tailored. The synthetic strategy using GaCl3 as the Ga precursor to study the vapor phase epitaxy process in this work will provide a simple and efficient approach to obtain nonpolar GaN nanowires and will thus pave a solid way for fundamental research on high-quality nonpolar GaN nanowires in optoelectronic nanodevices.

Defect-induced nucleation and epitaxial growth of a MOF-derived hierarchical Mo2C@Co architecture for an efficient hydrogen evolution reaction

The 3D hierarchical structure in catalysts not only the preserves intrinsic characteristics of each component, but also achieves increased specific surface area and active sites for the hydrogen evolution reaction (HER). Herein, we report a new strategy to synthesize efficient 3D hierarchical catalysts composed of Mo₂C nanosheets and Co nanoparticles (H-Mo₂C@Co). It was realized by using raw materials, defect-rich MoO_x, Co(NO₃)₂·6H₂O and 2-methylimidazole, to design Mo/Co bimetallic metal–organic frameworks (BMOFs), followed by pyrolysis at 800 °C. The defects in MoO_x induced preferential nucleation and growth of the BMOFs so that they can ensure the construction of a stable 3D hierarchical structure. Mo₂C and Co have a synergistic effect in improving the HER via providing large surface areas (351.5 m² g⁻¹), more active sites and optimizing charge transfer. It can achieve 10 mA cm⁻² at low overpotential over a wide pH range (144 mV in 0.5 M H₂SO₄ and 103 mV in 1.0 M KOH) and the properties can be well maintained in both acid and alkaline electrolyte after 2000 cycles. The hierarchical catalyst contains no noble metal, can be synthesized on a large scale and recycled by magnetic stirring, demonstrating great potential in water splitting, wastewater treatment, dye adsorption and other fields.

In this work, we report a new strategy to synthesize efficient 3D hierarchical catalysts composed by Mo₂C nanosheets and Co nanoparticles (H-Mo₂C@Co). The Mo₂C and Co makes a synergistic effect in improving HER via providing large surface areas.

Structural Evolution and Formation Mechanism of the Soft Colloidal Arrays in the Core of PAAm Nanofibers by Electrospun Packing

Electrospinning provides a facile and versatile method for generating nanofibers from a large variety of starting materials, including polymers, ceramic, composites, and micro-/nanocolloids. In particular, incorporating functional nanoparticles (NPs) with polymeric materials endows the electrospun fibers/sheets with novel or better performance. This work evaluates the spinnability of polyacrylamide (PAAm) solution containing thermoresponsive poly(N-isopropylacrylamide-co-tert-butyl acrylate) microgel nanospheres (PNTs) prepared by colloid electrospinning. In the presence of a suitable weight ratio (1:4) of PAAm and PNTs, the in-fiber arrangements of PNTs-electrospun fibers will evolve into chain-like arrays and beads-on-string structures by confining of PAAm nanofibers, and then the free amide groups of PAAm can bind amide moieties on the surfaces of PNTs, resulting in the assembling of PNTs in the cores of PAAm fibers. The present work serves as a reference in the fabrication of novel thermoresponsive hybrid fibers involving functional nanospheres via electrospun packing. The prepared nanofibers with chain-like and thermoresponsive colloid arrays in the cores are expected to have potential application in various fields.

Chiral nanoparticles in singular light fields

The studying of how twisted light interacts with chiral matter on the nanoscale is paramount for tackling the challenging task of optomechanical separation of nanoparticle enantiomers, whose solution can revolutionize the entire pharmaceutical industry. Here we calculate optical forces and torques exerted on chiral nanoparticles by Laguerre-Gaussian beams carrying a topological charge. We show that regardless of the beam polarization, the nanoparticles are exposed to both chiral and achiral forces with nonzero reactive and dissipative components. Longitudinally polarized beams are found to produce chirality densities that can be 109 times higher than those of transversely polarized beams and that are comparable to the chirality densities of beams polarized circularly. Our results and analytical expressions prove useful in designing new strategies for mechanical separation of chiral nanoobjects with the help of highly focussed beams.

Completely Chiral Optical Force for Enantioseparation

Fast and reliable separation of enantiomers of chiral nanoparticles requires elimination of all the forces that are independent of the nanoparticle handedness and creation of a sufficiently strong force that either pushes different enantiomers in opposite directions or delays the diffusion of one of them with respect to the other. Here we show how to construct such a completely chiral optical force using two counterpropagating circularly polarized plane waves of opposite helicities. We then explore capabilities of the related enantioseparation method by analytically solving the problem of the force-induced diffusion of chiral nanoparticles in a confined region, and reveal that it results in exponential spatial dependencies of the quantities measuring the purity of chiral substances. The proposed concept of a completely chiral optical force can potentially advance enantioseparation and enantiopurification techniques for all kinds of chiral nanoparticles that strongly interact with light.

Molecular Recognition of Biomolecules by Chiral CdSe Quantum Dots

Molecular recognition is one of the most important phenomena in Chemistry and Biology. Here we present a new way of enantiomeric molecular recognition using intrinsically chiral semiconductor nanocrystals as assays. Real-time confocal microscopy studies supported by circular dichroism spectroscopy data and theoretical modelling indicate an ability of left-handed molecules of cysteine and, to a smaller extent, histidine and arginine to discriminate between surfaces of left- and right-handed nanocrystals.

Defect-Induced Nucleation and Epitaxy: A New Strategy toward the Rational Synthesis of WZ-GaN/3C-SiC Core-Shell Heterostructures

In this work, we demonstrate a new strategy to create WZ-GaN/3C-SiC heterostructure nanowires, which feature controllable morphologies. The latter is realized by exploiting the stacking faults in 3C-SiC as preferential nucleation sites for the growth of WZ-GaN. Initially, cubic SiC nanowires with an average diameter of ∼100 nm, which display periodic stacking fault sections, are synthesized in a chemical vapor deposition (CVD) process to serve as the core of the heterostructure. Subsequently, hexagonal wurtzite-type GaN shells with different shapes are grown on the surface of 3C-SiC wire core. In this context, it is possible to obtain two types of WZ-GaN/3C-SiC heterostructure nanowires by means of carefully controlling the corresponding CVD reactions. Here, the stacking faults, initially formed in 3C-SiC nanowires, play a key role in guiding the epitaxial growth of WZ-GaN as they represent surface areas of the 3C-SiC nanowires that feature a higher surface energy. A dedicated structural analysis of the interfacial region by means of high-resolution transmission electron microscopy (HRTEM) revealed that the disordering of the atom arrangements in the SiC defect area promotes a lattice-matching with respect to the WZ-GaN phase, which results in a preferential nucleation. All WZ-GaN crystal domains exhibit an epitaxial growth on 3C-SiC featuring a crystallographic relationship of [12̅10](WZ-GaN) //[011̅](3C-SiC), (0001)(WZ-GaN)//(111)(3C-SiC), and d(WZ-GaN(0001)) ≈ 2d(3C-SiC(111)). The approach to utilize structural defects of a nanowire core to induce a preferential nucleation of foreign shells generally opens up a number of opportunities for the epitaxial growth of a wide range of semiconductor nanostructures which are otherwise impossible to acquire. Consequently, this concept possesses tremendous potential for the applications of semiconductor heterostructures in various fields such as optics, electrics, electronics, and photocatalysis for energy harvesting and environment processing.

Zn-dopant dependent defect evolution in GaN nanowires

Zn doped GaN nanowires with different doping levels (0, <1 at%, and 3-5 at%) have been synthesized through a chemical vapor deposition (CVD) process. The effect of Zn doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (101¯3), (101¯1) and (202¯1), as well as Type I stacking faults (…ABABCBCB…), are observed in the nanowires. The increasing Zn doping level (<1 at%) induces the formation of screw dislocations featuring a predominant screw component along the radial direction of the GaN nanowires. At high Zn doping level (3-5 at%), meta-stable cubic zinc blende (ZB) domains are generated in the WZ GaN nanowires. The WZ/ZB phase boundary (…ABABACBA…) can be identified as Type II stacking faults. The density of stacking faults (both Type I and Type II) increases with increasing the Zn doping levels, which in turn leads to a rough-surface morphology in the GaN nanowires. First-principles calculations reveal that Zn doping will reduce the formation energy of both Type I and Type II stacking faults, favoring their nucleation in GaN nanowires. An understanding of the effect of Zn doping on the defect evolution provides an important method to control the microstructure and the electrical properties of p-type GaN nanowires.