Polymorphism of Rare Earth Disilicides

Stable Structures and Superconductivity in a Y-Si System under High Pressure

Recently, the discovery of superconductivity in compressed electrides offers a promising route toward searching for high superconductivity in a high-pressure community. However, only a few superconducting electrides have been successfully found thus far, thereby limiting the variety of superconducting electride examples. In this work, we performed extensive structure searches on a high-pressure Y-Si system by using CALYPSO structure prediction methodology. Our simulations identified several stable stoichiometries of YSi, YSi₂, YSi₃, Y₅Si₃, Y₂Si, and Y₃Si under high pressure. These structures contain a diversity of structure configurations, including silicon chains, Si₃ trilaterals, Si₄ quadrilaterals, Si₆ hexagons, Si₈ rings, a Si₄-Si₆-Si₈ frame, as well as a silicon layer. Remarkably, Y₃Si is predicted to be an electride with a superconducting critical temperature (T_c) of ∼11.2 and 14.5 K at 30 and 50 GPa, respectively. These results highlight the role of the electrons at the Fermi surface in determining the superconductivity of predicted structures.

Structure variations within RSi2 and R2Si3 silicides. Part II. Structure driving factors

To gain an overview of the various structure reports on RSi₂ and R₂TSi₃ compounds (R is a member of the Sc group, an alkaline earth, lanthanide or actinide metal, T is a transition metal), compositions, lattice parameters a and c, ratios c/a, formula units per unit cell, and structure types are summarized in extensive tables and the variations of these properties when varying the R or T elements are analyzed. Following the structural systematization given in Part I, Part II focuses on revealing the driving factors for certain structure types, in particular, the electronic structure. Here, concepts of different complexity are presented, including molecular orbital theory, the principle of hard and soft acids and bases, and a Bader analysis based on Density Functional Theory calculations for representatives of the reported structure types. The potential Si/T ordering in different structures is discussed. Additionally, the influences from intrinsic and extrinsic properties (e.g. elemental size and electronics as well as lattice parameters and structure type) are investigated on each other using correlation plots. Thermal treatment is identified as an important factor for the ordering of Si/T atoms.

Structure variations within RSi2 and R2TSi3 silicides. Part I. Structure overview

Here, structural parameters of various structure reports on RSi2 and R2TSi3 compounds [where R is an alkaline earth metal, a rare earth metal (i.e. an element of the Sc group or a lathanide), or an actinide and T is a transition metal] are summarized. The parameters comprising composition, lattice parameters a and c, ratio c/a, formula unit per unit cell and structure type are tabulated. The relationships between the underlying structure types are presented within a group-subgroup scheme (Bärnighausen diagram). Additionally, unexpectedly missing compounds within the R2TSi3 compounds were examined with density functional theory and compounds that are promising candidates for synthesis are listed. Furthermore, a correlation was detected between the orthorhombic AlB2-like lattices of, for example, Ca2AgSi3 and the divalence of R and the monovalence of T. Finally, a potential tetragonal structure with ordered Si/T sites is proposed.