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Pizzocchero F, Jessen BS, Gammelgaard L, Andryieuski A, Whelan PR, Shivayogimath A, Caridad JM, Kling J, Petrone N, Tang PT, Malureanu R, Hone J, Booth TJ, Lavrinenko A, Bøggild P. Chemical Vapor-Deposited Graphene on Ultraflat Copper Foils for van der Waals Hetero-Assembly. ACS OMEGA 2022; 7:22626-22632. [PMID: 35811885 PMCID: PMC9260747 DOI: 10.1021/acsomega.2c01946] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/30/2022] [Accepted: 06/09/2022] [Indexed: 06/15/2023]
Abstract
The purity and morphology of the copper surface is important for the synthesis of high-quality, large-grained graphene by chemical vapor deposition. We find that atomically smooth copper foils-fabricated by physical vapor deposition and subsequent electroplating of copper on silicon wafer templates-exhibit strongly reduced surface roughness after the annealing of the copper catalyst, and correspondingly lower nucleation and defect density of the graphene film, when compared to commercial cold-rolled copper foils. The "ultrafoils"-ultraflat foils-facilitate easier dry pickup and encapsulation of graphene by hexagonal boron nitride, which we believe is due to the lower roughness of the catalyst surface promoting a conformal interface and subsequent stronger van der Waals adhesion between graphene and hexagonal boron nitride.
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Affiliation(s)
- Filippo Pizzocchero
- CNG—Center
of Nanostructured Graphene, Kongens
Lyngby 2800 Denmark
- DTU
Physics, Technical University of Denmark, Building 309, Kongens Lyngb 2800 Denmark
| | - Bjarke S. Jessen
- CNG—Center
of Nanostructured Graphene, Kongens
Lyngby 2800 Denmark
- DTU
Physics, Technical University of Denmark, Building 309, Kongens Lyngb 2800 Denmark
- Department
of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Lene Gammelgaard
- CNG—Center
of Nanostructured Graphene, Kongens
Lyngby 2800 Denmark
- DTU
Physics, Technical University of Denmark, Building 309, Kongens Lyngb 2800 Denmark
| | - Andrei Andryieuski
- DTU
Electro, Technical University of Denmark, Ørsteds pl. 343, Kongens Lyngby 2800 Denmark
| | - Patrick R. Whelan
- CNG—Center
of Nanostructured Graphene, Kongens
Lyngby 2800 Denmark
- DTU
Physics, Technical University of Denmark, Building 309, Kongens Lyngb 2800 Denmark
- Department
of Materials and Production, Aalborg University, Skjernvej 4A, Aalborg 9220, Denmark
| | - Abhay Shivayogimath
- CNG—Center
of Nanostructured Graphene, Kongens
Lyngby 2800 Denmark
- DTU
Physics, Technical University of Denmark, Building 309, Kongens Lyngb 2800 Denmark
| | - José M. Caridad
- CNG—Center
of Nanostructured Graphene, Kongens
Lyngby 2800 Denmark
- DTU
Physics, Technical University of Denmark, Building 309, Kongens Lyngb 2800 Denmark
- Department
of Applied Physics and USAL NanoLab, University
of Salamanca, 37008 Salamanca, Spain
| | - Jens Kling
- CNG—Center
of Nanostructured Graphene, Kongens
Lyngby 2800 Denmark
- DTU
Nanolab, Technical University of Denmark, Fysikvej 307, Kongens Lyngby 2800, Denmark
| | - Nicholas Petrone
- Department
of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Peter T. Tang
- IPU,
Danmarks Tekniske Universitet, Produktionstorvet 425, Kongens Lyngby 2800 Denmark
| | - Radu Malureanu
- DTU
Electro, Technical University of Denmark, Ørsteds pl. 343, Kongens Lyngby 2800 Denmark
| | - James Hone
- Department
of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Timothy J. Booth
- CNG—Center
of Nanostructured Graphene, Kongens
Lyngby 2800 Denmark
- DTU
Physics, Technical University of Denmark, Building 309, Kongens Lyngb 2800 Denmark
| | - Andrei Lavrinenko
- DTU
Electro, Technical University of Denmark, Ørsteds pl. 343, Kongens Lyngby 2800 Denmark
| | - Peter Bøggild
- CNG—Center
of Nanostructured Graphene, Kongens
Lyngby 2800 Denmark
- DTU
Physics, Technical University of Denmark, Building 309, Kongens Lyngb 2800 Denmark
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Chu CM, Woon WY. Growth of twisted bilayer graphene through two-stage chemical vapor deposition. NANOTECHNOLOGY 2020; 31:435603. [PMID: 32634795 DOI: 10.1088/1361-6528/aba39e] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We investigate growth of twisted bilayer graphene through two-stage chemical vapor deposition (CVD). Exploiting the synergetic nucleation and growth dynamics involving carbon sources from the residual carbon impurities in Cu bulk and gaseous CHx, sub-millimeter-sized single crystalline graphene grains with multiple merged adlayer grains formed underneath are grown on Cu substrate. The distribution of the twist angles is investigated through a computer algorithm utilizing spectral features from micro-Raman mapping. Besides the more thermodynamically stable AB-stacking (AB-BLG) or large angle (>15°) decoupled bilayer graphene (DC-BLG) configurations, there are some bilayer regions that contain specific twist angles (3-8°, 8-13°, and 11-15°) (termed as TBLG). The statistics show no TBLG formation for BLG with single nucleation center. The formation probability of TBLG is strongly dependent on the relative orientation of merging adlayer grains. Significant defects are found at the grain boundaries formed in AB-DC merging event without creating TBLG domain. The areal fraction of TBLG increases as H2/CH4 ratio increases. The growth mechanism of TBLG is discussed in light of the interactions between the second layer grains with consideration of strain generation during merging of adlayers.
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Affiliation(s)
- Che-Men Chu
- Department of Physics, National Central University, Jungli 32054, Taiwan
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Deng B, Liu Z, Peng H. Toward Mass Production of CVD Graphene Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1800996. [PMID: 30277604 DOI: 10.1002/adma.201800996] [Citation(s) in RCA: 78] [Impact Index Per Article: 15.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/11/2018] [Revised: 06/14/2018] [Indexed: 05/09/2023]
Abstract
Chemical vapor deposition (CVD) is considered to be an efficient method for fabricating large-area and high-quality graphene films due to its excellent controllability and scalability. Great efforts have been made to control the growth of graphene to achieve large domain sizes, uniform layers, fast growth, and low synthesis temperatures. Some attempts have been made by both the scientific community and startup companies to mass produce graphene films; however, there is a large difference in the quality of graphene synthesized on a laboratory scale and an industrial scale. Here, recent progress toward the mass production of CVD graphene films is summarized, including the manufacturing process, equipment, and critical process parameters. Moreover, the large-scale homogeneity of graphene films and fast characterization methods are also discussed, which are crucial for quality control in mass production.
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Affiliation(s)
- Bing Deng
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Zhongfan Liu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Beijing Graphene Institute (BGI), Beijing, 100094, China
| | - Hailin Peng
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
- Beijing Graphene Institute (BGI), Beijing, 100094, China
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4
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Liu J, Xu Y, Cai H, Zuo C, Huang Z, Lin L, Guo X, Chen Z, Lai F. Double hexagonal graphene ring synthesized using a growth-etching method. NANOSCALE 2016; 8:14178-14183. [PMID: 27387556 DOI: 10.1039/c6nr02515c] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Precisely controlling the layer number, stacking order, edge configuration, shape and structure of graphene is extremely challenging but highly desirable in scientific research. In this report, a new concept named the growth-etching method has been explored to synthesize a graphene ring using the chemical vapor deposition process. The graphene ring is a hexagonal structure, which contains a hexagonal exterior edge and a hexagonal hole in the centre region. The most important concept introduced here is that the oxide nanoparticle derived from annealing is found to play a dual role. Firstly, it acts as a nucleation site to grow the hexagonal graphene domain and then it works as a defect for etching to form a hole. The evolution process of the graphene ring with the etching time was carefully studied. In addition, a double hexagonal graphene ring was successfully synthesized for the first time by repeating the growth-etching process, which not only confirms the validity and repeatability of the method developed here but may also be further extended to grow unique graphene nanostructures with three, four, or even tens of graphene rings. Finally, a schematic model was drawn to illustrate how the double hexagonal graphene ring is generated and propagated. The results shown here may provide valuable guidance for the design and growth of unique nanostructures of graphene and other two-dimensional materials.
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Affiliation(s)
- Jinyang Liu
- College of Physics and Energy, Fujian Normal University, Fuzhou, 350117, P. R. China.
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Zeng M, Tan L, Wang L, Mendes RG, Qin Z, Huang Y, Zhang T, Fang L, Zhang Y, Yue S, Rümmeli MH, Peng L, Liu Z, Chen S, Fu L. Isotropic Growth of Graphene toward Smoothing Stitching. ACS NANO 2016; 10:7189-7196. [PMID: 27403842 DOI: 10.1021/acsnano.6b03668] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The quality of graphene grown via chemical vapor deposition still has very great disparity with its theoretical property due to the inevitable formation of grain boundaries. The design of single-crystal substrate with an anisotropic twofold symmetry for the unidirectional alignment of graphene seeds would be a promising way for eliminating the grain boundaries at the wafer scale. However, such a delicate process will be easily terminated by the obstruction of defects or impurities. Here we investigated the isotropic growth behavior of graphene single crystals via melting the growth substrate to obtain an amorphous isotropic surface, which will not offer any specific grain orientation induction or preponderant growth rate toward a certain direction in the graphene growth process. The as-obtained graphene grains are isotropically round with mixed edges that exhibit high activity. The orientation of adjacent grains can be easily self-adjusted to smoothly match each other over a liquid catalyst with facile atom delocalization due to the low rotation steric hindrance of the isotropic grains, thus achieving the smoothing stitching of the adjacent graphene. Therefore, the adverse effects of grain boundaries will be eliminated and the excellent transport performance of graphene will be more guaranteed. What is more, such an isotropic growth mode can be extended to other types of layered nanomaterials such as hexagonal boron nitride and transition metal chalcogenides for obtaining large-size intrinsic film with low defect.
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Affiliation(s)
- Mengqi Zeng
- College of Chemistry and Molecular Science, Wuhan University , Wuhan 430072, China
| | - Lifang Tan
- College of Chemistry and Molecular Science, Wuhan University , Wuhan 430072, China
| | - Lingxiang Wang
- College of Chemistry and Molecular Science, Wuhan University , Wuhan 430072, China
| | | | - Zhihui Qin
- State Key Laboratory of Magnetic Resonance and Atomic and Molecular Physics, Wuhan Institute of Physics and Mathematics, Chinese Academy Sciences , Wuhan 430071, China
| | - Yaxin Huang
- College of Chemistry and Molecular Science, Wuhan University , Wuhan 430072, China
| | - Tao Zhang
- College of Chemistry and Molecular Science, Wuhan University , Wuhan 430072, China
| | - Liwen Fang
- College of Chemistry and Molecular Science, Wuhan University , Wuhan 430072, China
| | | | | | | | | | | | - Shengli Chen
- College of Chemistry and Molecular Science, Wuhan University , Wuhan 430072, China
| | - Lei Fu
- College of Chemistry and Molecular Science, Wuhan University , Wuhan 430072, China
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Large-area synthesis of high-quality and uniform monolayer WS2 on reusable Au foils. Nat Commun 2015; 6:8569. [PMID: 26450174 PMCID: PMC4633959 DOI: 10.1038/ncomms9569] [Citation(s) in RCA: 170] [Impact Index Per Article: 18.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/07/2015] [Accepted: 09/04/2015] [Indexed: 12/24/2022] Open
Abstract
Large-area monolayer WS2 is a desirable material for applications in next-generation electronics and optoelectronics. However, the chemical vapour deposition (CVD) with rigid and inert substrates for large-area sample growth suffers from a non-uniform number of layers, small domain size and many defects, and is not compatible with the fabrication process of flexible devices. Here we report the self-limited catalytic surface growth of uniform monolayer WS2 single crystals of millimetre size and large-area films by ambient-pressure CVD on Au. The weak interaction between the WS2 and Au enables the intact transfer of the monolayers to arbitrary substrates using the electrochemical bubbling method without sacrificing Au. The WS2 shows high crystal quality and optical and electrical properties comparable or superior to mechanically exfoliated samples. We also demonstrate the roll-to-roll/bubbling production of large-area flexible films of uniform monolayer, double-layer WS2 and WS2/graphene heterostructures, and batch fabrication of large-area flexible monolayer WS2 film transistor arrays. WS2 is a promising material for application in next-generation electronics, yet current methods of fabrication can only yield micrometre-sized domains. Here, via ambient-pressure CVD, the authors report the growth of high-quality, uniform monolayer WS2 single crystals of the order of millimetres.
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Meca E, Lowengrub J, Kim H, Mattevi C, Shenoy VB. Epitaxial graphene growth and shape dynamics on copper: phase-field modeling and experiments. NANO LETTERS 2013; 13:5692-7. [PMID: 24147584 DOI: 10.1021/nl4033928] [Citation(s) in RCA: 17] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
The epitaxial growth of graphene on copper foils is a complex process, influenced by thermodynamic, kinetic, and growth parameters, often leading to diverse island shapes including dendrites, squares, stars, hexagons, butterflies, and lobes. Here, we introduce a phase-field model that provides a unified description of these diverse growth morphologies and compare the model results with new experiments. Our model explicitly accounts for the anisotropies in the energies of growing graphene edges, kinetics of attachment of carbon at the edges, and the crystallinity of the underlying copper substrate (through anisotropy in surface diffusion). We show that anisotropic diffusion has a very important, counterintuitive role in the determination of the shape of islands, and we present a "phase diagram" of growth shapes as a function of growth rate for different copper facets. Our results are shown to be in excellent agreement with growth shapes observed for high symmetry facets such as (111) and (001) as well as for high-index surfaces such as (221) and (310).
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Affiliation(s)
- Esteban Meca
- Department of Mathematics, University of California , Irvine, California 92697-3875, United States
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