Exceptionally High Average Power Factor and Thermoelectric Figure of Merit in n-type PbSe by the Dual Incorporation of Cu and Te

Ultralow Lattice Thermal Transport and Considerable Wave-like Phonon Tunneling in Chalcogenide Perovskite BaZrS3

Chalcogenide perovskites provide a promising avenue for nontoxic, stable thermoelectric materials. Here, the thermal transport and thermoelectric properties of BaZrS3 as a typical orthorhombic perovskite are investigated. An extremely low lattice thermal conductivity κL of 1.84 W/mK at 300 K is revealed for BaZrS3, due to the softening effect of Ba atoms on the lattice and the strong anharmonicity caused by the twisted structure. We demonstrate that coherence contributions to κL, arising from wave-like phonon tunneling, lead to an 18% thermal transport contribution at 300 K. The increasing temperature softens the phonons, thus reducing the group velocity of materials and increasing the scattering phase space. However, it simultaneously reduces the anharmonicity, which is dominant in BaZrS3 and ultimately improves the particle-like thermal transport. In addition, via replacement of the S atom with Se- and Ti-alloying strategy, the ZT value of BaZrS3 is significantly increased from 0.58 to 0.91 at 500 K, making it an important candidate for thermoelectric applications.

Hg Doping Induced Reduction in Structural Disorder Enhances the Thermoelectric Performance in AgSbTe2

Defect engineering, achieved by precise tuning of the atomic disorder within crystalline solids, forms a cornerstone of structural chemistry. This nuanced approach holds the potential to significantly augment thermoelectric performance by synergistically manipulating the interplay between the charge carrier and lattice dynamics. Here, the current study presents a distinctive investigation wherein the introduction of Hg doping into AgSbTe2 serves to partially curtail structural disorder. This strategic maneuver mitigates potential fluctuations originating from pronounced charge and size disparities between Ag+ and Sb3+, positioned in octahedral sites within the rock salt structure. Hg doping significantly improves the phase stability of AgSbTe2 by restricting the congenital emergence of the Ag2Te minor secondary phase and promotes partial atomic ordering in the cation sublattice. Reduction in atomic disorder coalesced with a complementary modification of electronic structure by Hg doping results in increased carrier mobility. The formation of nanoscale superstructure with sizes (2-5 nm) of the order of phonon mean free path in AgSbTe2 is further promoted by reduced partial disorder, causes enhanced scattering of heat-carrying phonons, and results in a glass-like ultralow lattice thermal conductivity (∼0.32 W m-1 K-1 at 297 K). Cumulatively, the multifaceted influence of Hg doping, in conjunction with the consequential reduction in disorder, allows achieving a high thermoelectric figure-of-merit, zT, of ∼2.4 at ∼570 K. This result defies conventional paradigms that prioritize increased disorder for optimizing zT.

Realizing the Ultralow Lattice Thermal Conductivity of Cu3SbSe4 Compound via Sulfur Alloying Effect

Cu3SbSe4 is a potential p-type thermoelectric material, distinguished by its earth-abundant, inexpensive, innocuous, and environmentally friendly components. Nonetheless, the thermoelectric performance is poor and remains subpar. Herein, the electrical and thermal transport properties of Cu3SbSe4 were synergistically optimized by S alloying. Firstly, S alloying widened the band gap, effectively alleviating the bipolar effect. Additionally, the substitution of S in the lattice significantly increased the carrier effective mass, leading to a large Seebeck coefficient of ~730 μVK-1. Moreover, S alloying yielded point defect and Umklapp scattering to significantly depress the lattice thermal conductivity, and thus brought about an ultralow κlat ~0.50 Wm-1K-1 at 673 K in the solid solution. Consequently, multiple effects induced by S alloying enhanced the thermoelectric performance of the Cu3SbSe4-Cu3SbS4 solid solution, resulting in a maximum ZT value of ~0.72 at 673 K for the Cu3SbSe2.8S1.2 sample, which was ~44% higher than that of pristine Cu3SbSe4. This work offers direction on improving the comprehensive TE in solid solutions via elemental alloying.

Quantum Interference and Contact Effects in the Thermoelectric Performance of Anthracene-Based Molecules

We report on the single-molecule electronic and thermoelectric properties of strategically chosen anthracene-based molecules with anchor groups capable of binding to noble metal substrates, such as gold and platinum. Specifically, we study the effect of different anchor groups, as well as quantum interference, on the electric conductance and the thermopower of gold/single-molecule/gold junctions and generally find good agreement between theory and experiments. All molecular junctions display transport characteristics consistent with coherent transport and a Fermi alignment approximately in the middle of the highest occupied molecular orbital/lowest unoccupied molecular orbital gap. Single-molecule results are in agreement with previously reported thin-film data, further supporting the notion that molecular design considerations may be translated from the single- to many-molecule devices. For combinations of anchor groups where one binds significantly more strongly to the electrodes than the other, the stronger anchor group appears to dominate the thermoelectric behavior of the molecular junction. For other combinations, the choice of electrode material can determine the sign and magnitude of the thermopower. This finding has important implications for the design of thermoelectric generator devices, where both n- and p-type conductors are required for thermoelectric current generation.

Large-Scale Colloidal Synthesis of Chalcogenides for Thermoelectric Applications

A simple and effective preparation of solution-processed chalcogenide thermoelectric materials is described. First, PbTe, PbSe, and SnSe were prepared by gram-scale colloidal synthesis relying on the reaction between metal acetates and diphenyl dichalcogenides in hexadecylamine solvent. The resultant phase-pure chalcogenides consist of highly crystalline and defect-free particles with distinct cubic-, tetrapod-, and rod-like morphologies. The powdered PbTe, PbSe, and SnSe products were subjected to densification by spark plasma sintering (SPS), affording dense pellets of the respective chalcogenides. Scanning electron microscopy shows that the SPS-derived pellets exhibit fine nano-/micro-structures dictated by the original morphology of the key constituting particles, while the powder X-ray diffraction and electron microscopy analyses confirm that the SPS-derived pellets are phase-pure materials, preserving the structure of the colloidal synthesis products. The resultant solution-processed PbTe, PbSe, and SnSe exhibit low thermal conductivity, which might be due to the enhanced phonon scattering developed over fine microstructures. For undoped n-type PbTe and p-type SnSe samples, an expected moderate thermoelectric performance is achieved. In contrast, an outstanding figure-of-merit of 0.73 at 673 K was achieved for undoped n-type PbSe outperforming, the majority of the optimized PbSe-based thermoelectric materials. Overall, our findings facilitate the design of efficient solution-processed chalcogenide thermoelectrics.

Preparation of Heavily Doped P-Type PbSe with High Thermoelectric Performance by the NaCl Salt-Assisted Approach

Thermoelectric (TE) technology, which can convert scrap heat into electricity, has attracted considerable attention. However, broader applications of TE are hindered by lacking high-performance thermoelectric materials, which can be effectively progressed by regulating the carrier concentration. In this work, a series of PbSe(NaCl)x (x = 3, 3.5, 4, 4.5) samples were synthesized through the NaCl salt-assisted approach with Na+ and Cl− doped into their lattice. Both theoretical and experimental results demonstrate that manipulating the carrier concentration by adjusting the content of NaCl is conducive to upgrading the electrical transport properties of the materials. The carrier concentration elevated from 2.71 × 1019 cm−3 to 4.16 × 1019 cm−3, and the materials demonstrated a maximum power factor of 2.9 × 10−3 W m−1 K−2. Combined with an ultralow lattice thermal conductivity of 0.7 W m−1 K−1, a high thermoelectric figure of merit (ZT) with 1.26 at 690 K was attained in PbSe(NaCl)4.5. This study provides a guideline for chemical doping to improve the thermoelectric properties of PbSe further and promote its applications.

Fine Tuning of Defects Enables High Carrier Mobility and Enhanced Thermoelectric Performance of n-Type PbTe

High carrier mobility is critical to improving thermoelectric performance over a broad temperature range. However, traditional doping inevitably deteriorates carrier mobility. Herein, we develop a strategy for fine tuning of defects to improve carrier mobility. To begin, n-type PbTe is created by compensating for the intrinsic Pb vacancy in bare PbTe. Excess Pb²⁺ reduces vacancy scattering, resulting in a high carrier mobility of ∼3400 cm² V^-1 s^-1. Then, excess Ag is introduced to compensate for the remaining intrinsic Pb vacancies. We find that excess Ag exhibits a dynamic doping process with increasing temperatures, increasing both the carrier concentration and carrier mobility throughout a wide temperature range; specifically, an ultrahigh carrier mobility ∼7300 cm² V^-1 s^-1 is obtained for Pb_1.01Te + 0.002Ag at 300 K. Moreover, the dynamic doping-induced high carrier concentration suppresses the bipolar thermal conductivity at high temperatures. The final step is using iodine to optimize the carrier concentration to ∼10¹⁹ cm^-3. Ultimately, a maximum ZT value of ∼1.5 and a large average ZT _ave value of ∼1.0 at 300-773 K are obtained for Pb_1.01Te_0.998I_0.002 + 0.002Ag. These findings demonstrate that fine tuning of defects with <0.5% impurities can remarkably enhance carrier mobility and improve thermoelectric performance.

Atomic Level Defect Structure Engineering for Unusually High Average Thermoelectric Figure of Merit in n-Type PbSe Rivalling PbTe

Realizing high average thermoelectric figure of merit (ZT_ave ) and power factor (PF_ave ) has been the utmost task in thermoelectrics. Here the new strategy to independently improve constituent factors in ZT is reported, giving exceptionally high ZT_ave and PF_ave in n-type PbSe. The nonstoichiometric, alloyed composition and resulting defect structures in new Pb_{1+ x} Se_0.8 Te_0.2 (x = 0-0.125) system is key to this achievement. First, incorporating excess Pb unusually increases carrier mobility (µ_H ) and concentration (n_H ) simultaneously in contrast to the general physics rule, thereby raising electrical conductivity (σ). Second, modifying charge scattering mechanism by the authors' synthesis process boosts a magnitude of Seebeck coefficient (S) above theoretical expectations. Detouring the innate inverse proportionality between n_H and µ_H ; and σ and S enables independent control over them and change the typical trend of PF to temperature, giving remarkably high PF_ave ≈20 µW cm^-1 K^-2 from 300 to 823 K. The dual incorporation of Te and excess Pb generates unusual antisite Pb at the anionic site and displaced Pb from the ideal position, consequently suppressing lattice thermal conductivity. The best composition exhibits a ZT_ave of ≈1.2 from 400 to 823 K, one of the highest reported for all n-type PbQ (Q = chalcogens) materials.

Dense dislocations enable high-performance PbSe thermoelectric at low-medium temperatures

PbSe-based thermoelectric materials exhibit promising ZT values at medium temperature, but its near-room-temperature thermoelectric properties are overlooked, thus restricting its average ZT (ZT_ave) value at low-medium temperatures. Here, a high ZT_ave of 0.90 at low temperature (300-573 K) is reported in n-type PbSe-based thermoelectric material (Pb_1.02Se_0.72Te_0.20S_0.08-0.3%Cu), resulting in a large ZT_ave of 0.96 at low-medium temperatures (300-773 K). This high thermoelectric performance stems from its ultralow lattice thermal conductivity caused by dense dislocations through heavy Te/S alloying and Cu interstitial doping. The dislocation density evaluated by modified Williamson-Hall method reaches up to 5.4 × 10¹⁶ m^-2 in Pb_1.02Se_0.72Te_0.20S_0.08-0.3%Cu. Moreover, the microstructure observation further uncloses two kinds of dislocations, namely screw and edge dislocations, with several to hundreds of nanometers scale in length. These dislocations in lattice can strongly intensify phonon scattering to minimize the lattice thermal conductivity and simultaneously maintain high carrier transport. As a result, with the reduced lattice thermal conductivity and optimized power factor in Pb_1.02Se_0.72Te_0.20S_0.08-0.3%Cu, its near-room-temperature thermoelectric performance is largely enhanced and exceeds previous PbSe-based thermoelectric materials.

Significantly Enhanced Thermoelectric Performance Achieved in CuGaTe2 through Dual-Element Permutations at Cation Sites

CuGaTe₂ has become a widely studied mid-temperature thermoelectric material due to the advantages of large element abundance, proper band gap, and intrinsically high Seebeck coefficient. However, the intrinsically high lattice thermal conductivity and low room-temperature electrical conductivity result in a merely moderate thermoelectric performance for pristine CuGaTe₂. In this work, we found that Cu deficiency can significantly reduce the activation energy E_a of Cu vacancies from ∼0.17 eV for pristine CuGaTe₂ to nearly zero for Cu_0.97GaTe₂, thus leading to dramatic improvements in hole concentration and power factor. More remarkably, element permutations (Ag/Cu and In/Ga) at both cation sites can effectively reduce the lattice thermal conductivity at the entire testing temperatures by producing intensive atomic-scale mass and strain fluctuations. Eventually, an ultrahigh peak ZT_max value of ∼1.5 at 873 K is achieved in the composition of Cu_0.72Ag_0.25Ga_0.6In_0.4Te₂, while a large average ZT_avg value of ∼0.7 (323-873 K) is obtained in the Cu_0.67Ag_0.3Ga_0.6In_0.4Te₂ sample, both of which are significant improvements over pristine CuGaTe₂.

High-Throughput Screening for Thermoelectric Semiconductors with Desired Conduction Types by Energy Positions of Band Edges

The conduction type of semiconductors is vitally important in many fields (e.g., photovoltaics, transistors, and thermoelectrics), but so far, there is no effective and simple indicator to quickly judge or predict the conduction type of various semiconductors. In this work, based on the relationship between the formation energy of charged defect and the Fermi level, we propose a simple and low-cost strategy for high-throughput screening the potential n-type or p-type semiconductors from the material database by using energy positions of band edges as indicators. As a case study, we validate this strategy in searching potential n-type thermoelectric materials from copper (Cu)-containing metal chalcogenides. A new promising thermoelectric material, CuIn₅Se₈, with potential intrinsic n-type conduction, is successfully screened from 407 Cu-containing metal chalcogenides and validated in the subsequent experiments. Upon doping iodine in CuIn₅Se₈, a peak thermoelectric figure of merit zT of 0.84 is obtained at 850 K. Beyond thermoelectrics, the strategy proposed in this study also sheds light on the new material development with desired conduction types in photovoltaics, transistors, and other fields.

High Thermoelectric Performance Achieved in Sb-Doped GeTe by Manipulating Carrier Concentration and Nanoscale Twin Grains

Lead-free and eco-friendly GeTe shows promising mid-temperature thermoelectric applications. However, a low Seebeck coefficient due to its intrinsically high hole concentration induced by Ge vacancies, and a relatively high thermal conductivity result in inferior thermoelectric performance in pristine GeTe. Extrinsic dopants such as Sb, Bi, and Y could play a crucial role in regulating the hole concentration of GeTe because of their different valence states as cations and high solubility in GeTe. Here we investigate the thermoelectric performance of GeTe upon Sb doping, and demonstrate a high maximum zT value up to 1.88 in Ge_0.90Sb_0.10Te as a result of the significant suppression in thermal conductivity while maintaining a high power factor. The maintained high power factor is due to the markable enhancement in the Seebeck coefficient, which could be attributed to the significant suppression of hole concentration and the valence band convergence upon Sb doping, while the low thermal conductivity stems from the suppression of electronic thermal conductivity due to the increase in electrical resistivity and the lowering of lattice thermal conductivity through strengthening the phonon scattering by lattice distortion, dislocations, and twin boundaries. The excellent thermoelectric performance of Ge_0.90Sb_0.10Te shows good reproducibility and thermal stability. This work confirms that Ge_0.90Sb_0.10Te is a superior thermoelectric material for practical application.

Ce Filling Limit and Its Influence on Thermoelectric Performance of Fe3CoSb12-Based Skutterudite Grown by a Temperature Gradient Zone Melting Method

CoSb3-based skutterudite is a promising mid-temperature thermoelectric material. However, the high lattice thermal conductivity limits its further application. Filling is one of the most effective methods to reduce the lattice thermal conductivity. In this study, we investigate the Ce filling limit and its influence on thermoelectric properties of p-type Fe3CoSb12-based skutterudites grown by a temperature gradient zone melting (TGZM) method. Crystal structure and composition characterization suggests that a maximum filling fraction of Ce reaches 0.73 in a composition of Ce0.73Fe2.73Co1.18Sb12 prepared by the TGZM method. The Ce filling reduces the carrier concentration to 1.03 × 1020 cm-3 in the Ce1.25Fe3CoSb12, leading to an increased Seebeck coefficient. Density functional theory (DFT) calculation indicates that the Ce-filling introduces an impurity level near the Fermi level. Moreover, the rattling effect of the Ce fillers strengthens the short-wavelength phonon scattering and reduces the lattice thermal conductivity to 0.91 W m-1 K-1. These effects induce a maximum Seebeck coefficient of 168 μV K-1 and a lowest κ of 1.52 W m-1 K-1 at 693 K in the Ce1.25Fe3CoSb12, leading to a peak zT value of 0.65, which is 9 times higher than that of the unfilled Fe3CoSb12.

Mixed-Valence CsCu4Se3: Large Phonon Anharmonicity Driven by the Hierarchy of the Rigid [(Cu+)4(Se2-)2](Se-) Double Anti-CaF2 Layer and the Soft Cs+ Sublattice

Crystalline solids that exhibit inherently low lattice thermal conductivity (κ_lat) have attracted a great deal of attention because they offer the only independent control for pursuing a high thermoelectric figure of merit (ZT). Herein, we report the successful preparation of CsCu₄Q₃ (Q = S (compound 1), Se (compound 2)) with the aid of a safe and facile boron-chalcogen method. The single-crystal diffraction data confirm the P4/mmm hierarchical structures built up by the mixed-valence [(Cu⁺)₄(Q^2-)₂](Q^-) double anti-CaF₂ layer and the NaCl-type Cs⁺ sublattice involving multiple bonding interactions. The electron-poor compound CsCu₄Q₃ features Cu-Q antibonding states around E_F that facilitates a high σ value of 3100 S/cm in 2 at 323 K. Significantly, the ultralow κ_lat value of 2, 0.20 W/m/K at 650 K (70% lower than that of Cu₂Se), is mainly driven by the vibrational coupling of the rigid double anti-CaF₂ layer and the soft NaCl-type sublattice. The hierarchical structure increases the bond multiplicity, which eventually leads to a large phonon anharmonicity, as evidenced by the effective scattering of the low-lying optical phonons to the heat-carrying acoustic phonons. Consequently, the acoustic phonon frequency in 2 drops sharply from 118 cm^-1 (of Cu₂Se) to 48 cm^-1. In addition, the elastic properties indicate that the hierarchical structure largely inhibits the transverse phonon modes, leading to a sound velocity (1571 m/s) and a Debye temperature (189 K) lower than those of Cu₂Se (2320 m/s; 292 K).

Surprisingly good thermoelectric performance of monolayer C3N

The rapid emergence of graphene has attracted numerous efforts to explore other two-dimensional materials. Here, we combine first-principles calculations and Boltzmann theory to investigate the structural, electronic, and thermoelectric transport properties of monolayer C₃N, which exhibits a honeycomb structure very similar to graphene. It is found that the system is both dynamically and thermally stable even at high temperature. Unlike graphene, the monolayer has an indirect band gap of 0.38 eV and much lower lattice thermal conductivity. Moreover, the system exhibits obviously larger electrical conductivity and Seebeck coefficients for the hole carriers. Consequently, theZTvalue ofp-type C₃N can reach 1.4 at 1200 K when a constant relaxation time is predicted by the simple deformation potential theory. However, such a largerZTis reduced to 0.6 if we fully consider the electron-phonon coupling. Even so, the thermoelectric performance of monolayer C₃N is still significantly enhanced compared with that of graphene, and is surprisingly good for low-dimensional thermoelectric materials consisting of very light elements.

Boron-Mediated Grain Boundary Engineering Enables Simultaneous Improvement of Thermoelectric and Mechanical Properties in N-Type Bi2 Te3

Powder metallurgy introduces small structures of high-density grain boundaries into Bi₂ Te₃ -based alloys, which promises to enhance their mechanical and thermoelectric performance. However, due to the strong donor-like effect induced by the increased surface, Te vacancies form in the powder-metallurgy process. Hence, the as-sintered n-type Bi₂ Te₃ -based alloys show a lower figure of merit (ZT) value than their p-type counterparts and the commercial zone-melted (ZM) ingots. Here, boron is added to one-step-sintered n-type Bi₂ Te₃ -based alloys to inhibit grain growth and to suppress the donor-like effect, simultaneously improving the mechanical and thermoelectric (TE) performance. Due to the alleviated donor-like effect and the carrier mobility maintained in our n-type Bi₂ Te_2.7 Se_0.3 alloys upon the addition of boron, the maximum and average ZT values within 298-473 K can be enhanced to 1.03 and 0.91, respectively, which are even slightly higher than that of n-type ZM ingots. Moreover, the addition of boron greatly improves the mechanical strength such as Vickers hardness and compressive strength due to the synergetic effects of Hall-Petch grain-boundary strengthening and boron dispersion strengthening. This facile and cost-effective grain boundary engineering by adding boron facilitates the practical application of Bi₂ Te₃ -based alloys and can also be popularized in other thermoelectric materials.

SnSe, the rising star thermoelectric material: a new paradigm in atomic blocks, building intriguing physical properties

Thermoelectric (TE) materials, which enable direct energy conversion between waste heat and electricity, have witnessed enormous and exciting developments over last several decades due to innovative breakthroughs both in materials and the synergistic optimization of structures and properties. Among the promising state-of-the-art materials for next-generation thermoelectrics, tin selenide (SnSe) has attracted rapidly growing research interest for its high TE performance and the intrinsic layered structure that leads to strong anisotropy. Moreover, complex interactions between lattice, charge, and orbital degrees of freedom in SnSe make up a large phase space for the optimization of its TE properties via the simultaneous tuning of structural and chemical features. Various techniques, especially advanced electron microscopy (AEM), have been devoted to exploring these critical multidiscipline correlations between TE properties and microstructures. In this review, we first focus on the intrinsic layered structure as well as the extrinsic structural "imperfectness" of various dimensions in SnSe as studied by AEM. Based on these characterization results, we give a comprehensive discussion on the current understanding of the structure-property relationship. We then point out the challenges and opportunities as provided by modern AEM techniques toward a deeper knowledge of SnSe based on electronic structures and lattice dynamics at the nanometer or even atomic scale, for example, the measurements of local charge and electric field distribution, phonon vibrations, bandgap, valence state, temperature, and resultant TE effects.

Entropy engineering promotes thermoelectric performance in p-type chalcogenides

We demonstrate that the thermoelectric properties of p-type chalcogenides can be effectively improved by band convergence and hierarchical structure based on a high-entropy-stabilized matrix. The band convergence is due to the decreased light and heavy band energy offsets by alloying Cd for an enhanced Seebeck coefficient and electric transport property. Moreover, the hierarchical structure manipulated by entropy engineering introduces all-scale scattering sources for heat-carrying phonons resulting in a very low lattice thermal conductivity. Consequently, a peak zT of 2.0 at 900 K for p-type chalcogenides and a high experimental conversion efficiency of 12% at ΔT = 506 K for the fabricated segmented modules are achieved. This work provides an entropy strategy to form all-scale hierarchical structures employing high-entropy-stabilized matrix. This work will promote real applications of low-cost thermoelectric materials.