Heavy Hydrogen Doping into ZnO and the H/D Isotope Effect

Solid-state atomic hydrogen as a broad-spectrum RONS scavenger for accelerated diabetic wound healing

Hydrogen therapy shows great promise as a versatile treatment method for diseases associated with the overexpression of reactive oxygen and nitrogen species (RONS). However, developing an advanced hydrogen therapy platform that integrates controllable hydrogen release, efficient RONS elimination, and biodegradability remains a giant technical challenge. In this study, we demonstrate for the first time that the tungsten bronze phase H0.53WO3 (HWO) is an exceptionally ideal hydrogen carrier, with salient features including temperature-dependent highly-reductive atomic hydrogen release and broad-spectrum RONS scavenging capability distinct from that of molecular hydrogen. Moreover, its unique pH-responsive biodegradability ensures post-therapeutic clearance at pathological sites. Treatment with HWO of diabetic wounds in an animal model indicates that the solid-state atomic H promotes vascular formation by activating M2-type macrophage polarization and anti-inflammatory cytokine production, resulting in acceleration of chronic wound healing. Our findings significantly expand the basic categories of hydrogen therapeutic materials and pave the way for investigating more physical forms of hydrogen species as efficient RONS scavengers for clinical disease treatment.

Proof of crystal-field-perturbation-enhanced luminescence of lanthanide-doped nanocrystals through interstitial H+ doping

Crystal-field perturbation is theoretically the most direct and effective method of achieving highly efficient photoluminescence from trivalent lanthanide (Ln3+) ions through breaking the parity-forbidden nature of their 4f-transitions. However, exerting such crystal-field perturbation remains an arduous task even in well-developed Ln3+-doped luminescent nanocrystals (NCs). Herein, we report crystal-field perturbation through interstitial H+-doping in orthorhombic-phase NaMgF3:Ln3+ NCs and achieve a three-orders-of-magnitude emission amplification without a distinct lattice distortion. Mechanistic studies reveal that the interstitial H+ ions perturb the local charge density distribution, leading to anisotropic polarization of the F- ligand, which affects the highly symmetric Ln3+-substituted [MgF6]4- octahedral clusters. This effectively alleviates the parity-forbidden selective rule to enhance the 4f-4 f radiative transition rate of the Ln3+ emitter and is directly corroborated by the apparent shortening of the radiative recombination lifetime. The interstitially H+-doped NaMgF3:Yb/Er NCs are successfully used as bioimaging agents for real-time vascular imaging. These findings provide concrete evidence for crystal-field perturbation effects and promote the design of Ln3+-doped luminescent NCs with high brightness.

Effects of Pre-Annealing on the Radiation Resistance of ZnO Nanorods

Ion implantation is usually used for semiconductor doping and isolation, which creates defects in semiconductors. ZnO is a promising semiconductor and has a variety of applications, such as for use in transparent electronics, optoelectronics, chemical and biological sensors, etc. In this work, ZnO nanorods were grown on Si (100) substrates by the process of chemical bath deposition and then annealed in an O2 atmosphere at 350 and 600 °C for 1 h to introduce different kinds of defects. The as-grown nanorods and the nanorods that annealed were irradiated simultaneously by 180 keV H+ ions at room temperature with a total dose of 8.0×1015 ions/cm2. The radiation effects of the H+ ions, effects of the pre-existed defects on the radiation resistance, and the related mechanisms under irradiation were investigated. The crystal and optical properties of the ZnO nanorods after H+ ion irradiation were found to depend upon the pre-existed defects in the nanorods. The existence of the appropriate concentration of oxygen interstitials in the ZnO nanorods caused them to have good radiation resistance. The thermal effects of irradiation played an important role in the property variation of nanorods. The temperature of the nanorods under 180 keV H+ ion bombardment was around 350 °C.

Porous Pb-Doped ZnO Nanobelts with Enriched Oxygen Vacancies: Preparation and Their Chemiresistive Sensing Performance

Among various approaches to improve the sensing performance of metal oxide, the metal-doped method is perceived as effective, and has received great attention and is widely investigated. However, it is still a challenge to construct heterogeneous metal-doped metal oxide with an excellent sensing performance. In the present study, porous Pb-doped ZnO nanobelts were prepared by a simply partial cation exchange method, followed by in situ thermal oxidation. Detailed characterization confirmed that Pb was uniformly distributed on porous nanobelts. Additionally, it occupied the Zn situation, not forming its oxides. The gas-sensing measurements revealed that 0.61 at% Pb-doped ZnO porous nanobelts exhibited a selectively enhanced response with long-term stability toward n-butanol among the investigated VOCs. The relative response to 50 ppm of n-butanol was up to 47.7 at the working temperature of 300 °C. Additionally, the response time was short (about 5 s). These results were mainly ascribed to the porous nanostructure, two-dimensional belt-like morphology, enriched oxygen vacancies and the specific synergistic effect from the Pb dopant. Finally, a possible sensing mechanism of porous Pb-doped ZnO nanobelts is proposed and discussed.