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Qiu X, Wang X, Liu X, Yuan S, Han K, Yang H. Theoretical Study of the Ternary Compound Monolayer CuP 2Se for Photocatalytic Water Splitting with Efficient Optical Absorption. Chemistry 2024; 30:e202400348. [PMID: 38602023 DOI: 10.1002/chem.202400348] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/26/2024] [Revised: 03/18/2024] [Accepted: 04/10/2024] [Indexed: 04/12/2024]
Abstract
Utilizing photocatalytic method to produce hydrogen by splitting water is an efficient strategy to solve the hotspot issues of energy crisis and environmental pollution. Herein, we systematically investigate the corresponding properties of the reported Cu-bearing ternary compound monolayer CuP2Se by using the first-principle calculations. The monolayer CuP2Se has quite small cleavage energy of 0.51 J/m2, indicating it can be easily produced by the mechanical exfoliation method experimentally. In addition, it is an indirect bandgap semiconductor material which has a moderate value of 1.91 eV. The conduction band minimum (CBM) and valence band maximum (VBM) can perfectly straddle the redox potentials of water when a biaxial strain of -4% to 4% is applied, unveiling the high photocatalytic thermodynamic stability of monolayer CuP2Se in response to the effect of solvent tension. Remarkably, the monolayer CuP2Se also demonstrates significant sunlight capturing ability in the visible region. The outstanding electronic and optical properties suggest that the monolayer CuP2Se is undoubtedly a viable material for photocatalytic water splitting.
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Affiliation(s)
- Xiaole Qiu
- Department of Physics and Electronic Information, Weifang University, 261061, Weifang, China
| | - Xiaoxuan Wang
- Department of Physics and Electronic Information, Weifang University, 261061, Weifang, China
| | - Xiaolu Liu
- Department of Physics and Electronic Information, Weifang University, 261061, Weifang, China
| | - Saifei Yuan
- Department of Physics and Electronic Information, Weifang University, 261061, Weifang, China
| | - Kai Han
- Department of Physics and Electronic Information, Weifang University, 261061, Weifang, China
| | - Hongchao Yang
- Department of Physics and Electronic Information, Weifang University, 261061, Weifang, China
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Zhen J, Liu Y, Dong H, Zhang Z, Zhang S, Wang G, Zhou Y, Wan S, Chen B, Liu G. Pressure-induced disorder and nanosizing inhibits superconductivity in In 2Te 3. NANOTECHNOLOGY 2023; 35:05LT01. [PMID: 37871598 DOI: 10.1088/1361-6528/ad0602] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Accepted: 10/22/2023] [Indexed: 10/25/2023]
Abstract
The generation of disorder often gives rise to profound and irreversible physical phenomena. Here, we explore the influence of disorder on the superconducting properties of In2Te3through comprehensive high-pressure investigations. Building upon previous findings, we investigated the progressive suppression of superconductivity in In2Te3during the depressurization process: the increased disorder that ultimately leads to the complete disappearance of the superconducting state. Simultaneously, our high-pressure x-ray diffraction analysis reveals an irreversible structural phase transition. Furthermore, microstructure analysis using transmission electron microscopy clearly demonstrates both grain refinement and a substantial enhancement of disorder. These findings not only provide valuable insights into the mechanism by which disorder suppresses superconductivity, but also offer guidance for future advancements in the fabrication of atmospheric-pressure superconductors.
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Affiliation(s)
- Jiapeng Zhen
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China
- Science and Technology on Integrated Logistics Support Laboratory, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China
| | - Ying Liu
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China
- Science and Technology on Integrated Logistics Support Laboratory, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China
| | - Hongliang Dong
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Ziyou Zhang
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Shihui Zhang
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Gui Wang
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Yan Zhou
- School of Physics and Technology, Nanjing Normal University, Nanjing 210023, People's Republic of China
| | - Shun Wan
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
| | - Bin Chen
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
- School of Science, Harbin Institute of Technology, Shenzhen 518055, People's Republic of China
| | - Guanjun Liu
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China
- Science and Technology on Integrated Logistics Support Laboratory, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China
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Kim D, Pandey J, Jeong J, Cho W, Lee S, Cho S, Yang H. Phase Engineering of 2D Materials. Chem Rev 2023; 123:11230-11268. [PMID: 37589590 DOI: 10.1021/acs.chemrev.3c00132] [Citation(s) in RCA: 26] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/18/2023]
Abstract
Polymorphic 2D materials allow structural and electronic phase engineering, which can be used to realize energy-efficient, cost-effective, and scalable device applications. The phase engineering covers not only conventional structural and metal-insulator transitions but also magnetic states, strongly correlated band structures, and topological phases in rich 2D materials. The methods used for the local phase engineering of 2D materials include various optical, geometrical, and chemical processes as well as traditional thermodynamic approaches. In this Review, we survey the precise manipulation of local phases and phase patterning of 2D materials, particularly with ideal and versatile phase interfaces for electronic and energy device applications. Polymorphic 2D materials and diverse quantum materials with their layered, vertical, and lateral geometries are discussed with an emphasis on the role and use of their phase interfaces. Various phase interfaces have demonstrated superior and unique performance in electronic and energy devices. The phase patterning leads to novel homo- and heterojunction structures of 2D materials with low-dimensional phase boundaries, which highlights their potential for technological breakthroughs in future electronic, quantum, and energy devices. Accordingly, we encourage researchers to investigate and exploit phase patterning in emerging 2D materials.
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Affiliation(s)
- Dohyun Kim
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Juhi Pandey
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Juyeong Jeong
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Woohyun Cho
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Seungyeon Lee
- Division of Chemical Engineering and Materials Science, Graduate Program in System Health Science and Engineering, Ewha Womans University, Seoul 03760, Korea
| | - Suyeon Cho
- Division of Chemical Engineering and Materials Science, Graduate Program in System Health Science and Engineering, Ewha Womans University, Seoul 03760, Korea
| | - Heejun Yang
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
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Feng J, Li C, Deng W, Lin B, Liu W, Susilo RA, Dong H, Chen Z, Zhou N, Yi X, Xing X, Ke F, Liu Z, Sheng H, Shi Z, Chen B. Superconductivity Induced by Lifshitz Transition in Pristine SnS 2 under High Pressure. J Phys Chem Lett 2022; 13:9404-9410. [PMID: 36191043 DOI: 10.1021/acs.jpclett.2c02580] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The importance of electronic structure evolutions and reconstitutions is widely acknowledged for strongly correlated systems. The precise effect of pressurized Fermi surface topology on metallization and superconductivity is a much-debated topic. In this work, an evolution from insulating to metallic behavior, followed by a superconducting transition, is systematically investigated in SnS2 under high pressure. In-situ X-ray diffraction measurements show the stability of the trigonal structure under compression. Interestingly, a Lifshitz transition, which has an important bearing on the metallization and superconductivity, is identified by the first-principles calculations between 35 and 40 GPa. Our findings provide a unique playground for exploring the relationship of electronic structure, metallization, and superconductivity under high pressure without crystal structural collapse.
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Affiliation(s)
- Jiajia Feng
- School of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, People's Republic of China
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Cong Li
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China
| | - Wen Deng
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Bencheng Lin
- School of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, People's Republic of China
| | - Wenhui Liu
- School of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, People's Republic of China
| | - Resta A Susilo
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
- Department of Physics, Pohang University of Science and Technology, Pohang 37673, Korea
| | - Hongliang Dong
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Zhiqiang Chen
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Nan Zhou
- School of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, People's Republic of China
| | - Xiaolei Yi
- School of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, People's Republic of China
| | - Xiangzhuo Xing
- School of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, People's Republic of China
- School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, China
| | - Feng Ke
- Department of Geological Sciences, Stanford University, Stanford, California 94305, United States
| | - Zhenxian Liu
- Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607, United States
| | - Hongwei Sheng
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Zhixiang Shi
- School of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, People's Republic of China
| | - Bin Chen
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
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Deng W, Zhen J, Huang Q, Wang Y, Dong H, Wan S, Zhang S, Feng J, Chen B. Pressure-Quenched Superconductivity in Weyl Semimetal NbP Induced by Electronic Phase Transitions under Pressure. J Phys Chem Lett 2022; 13:5514-5521. [PMID: 35696320 DOI: 10.1021/acs.jpclett.2c01266] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The TaAs family (NbAs, TaAs, NbP, TaP) are kinds of Weyl semimetals with lots of novel properties, thus attracting considerable attention in recent years. Here, we systematically studied the Weyl semimetal NbP up to 72 GPa through the resistivity, Raman spectra, X-ray diffraction measurements, and first-principles density functional theory (DFT) calculations. A pressure-induced semimetal-metal transition was observed at ∼36 GPa, which was further confirmed by the DFT calculations. With further compression up to 52 GPa, a superconducting state was observed. Interestingly, the Tc increases significantly upon decompression and shows a dome-shaped trend as a function of pressure. Surprisingly, the pressure-induced superconductivity can be quenched to ambient pressure, and all transitions under pressure do not involve any structural change. Our work not only depicts a phase diagram of the NbP system under high pressure but also provides a new experimental insight for superconductivity in Weyl semimetals.
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Affiliation(s)
- Wen Deng
- Center for High Pressure Science and Technology Advanced Research, Beijing 100094, People's Republic of China
| | - Jiapeng Zhen
- Center for High Pressure Science and Technology Advanced Research, Beijing 100094, People's Republic of China
| | - Qiushi Huang
- Beijing Computational Science Research Center, Beijing 100093, People's Republic of China
| | - Yanju Wang
- Center for High Pressure Science and Technology Advanced Research, Beijing 100094, People's Republic of China
| | - Hongliang Dong
- Center for High Pressure Science and Technology Advanced Research, Beijing 100094, People's Republic of China
| | - Shun Wan
- Center for High Pressure Science and Technology Advanced Research, Beijing 100094, People's Republic of China
| | - Shihui Zhang
- Center for High Pressure Science and Technology Advanced Research, Beijing 100094, People's Republic of China
| | - Jiajia Feng
- Center for High Pressure Science and Technology Advanced Research, Beijing 100094, People's Republic of China
| | - Bin Chen
- Center for High Pressure Science and Technology Advanced Research, Beijing 100094, People's Republic of China
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