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Huo C, Ma L, Yao Y, Cui X, Liu S, Deng S, Chen J. Strain-Enhanced Low-Temperature High Ionic Conductivity in Perovskite Nanopillar-Array Films. J Am Chem Soc 2024; 146:33937-33944. [PMID: 39610349 DOI: 10.1021/jacs.4c12625] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2024]
Abstract
Solid oxide ionic conductors with high ionic conductivity are highly desired for oxide-based electrochemical and energy devices, such as solid oxide fuel cells. However, achieving high ionic conductivity at low temperatures, particularly for practical out-of-plane transport applications, remains a challenge. In this study, leveraging the emergent interphase strain methodology, we achieve an exceptional low-temperature out-of-plane ionic conductivity in Na0.5Bi0.5TiO3 (NBT)-MgO nanopillar-array films. This ionic conductivity (0.003 S cm-1 at 400 °C) is over one order of magnitude higher than that of the pure NBT films and surpasses all conventional intermediate-temperature ionic conductors. Combining atomic-scale electron microscopy studies and first-principles calculations, we attribute this enhanced conductivity to the well-defined periodic alignment of NBT and MgO nanopillars, where the interphase tensile strain reaches as large as +2%. This strain expands the c-lattice and weakens the oxygen bonding, reducing oxygen vacancy formation and migration energy. Moreover, the interphase strain greatly enhances the stability of NBT up to 600 °C, well above the bulk transition temperature of 320 °C. On this basis, we clarify the oxygen migration path and establish an unambiguous strain-structure-ionic conductivity relationship. Our results demonstrate new possibilities for designing applicable high-performance ionic conductors through strain engineering.
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Affiliation(s)
- Chuanrui Huo
- Beijing Advanced Innovation Center for Materials Genome Engineering, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Liyang Ma
- School of Science, Key Laboratory of Quantum Materials of Zhejiang Provinces, Westlake Institute for Advanced Study, Westlake University, Hangzhou, Zhejiang 310024, China
| | - Yonghao Yao
- Beijing Advanced Innovation Center for Materials Genome Engineering, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Xinyu Cui
- Beijing Advanced Innovation Center for Materials Genome Engineering, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Shi Liu
- School of Science, Key Laboratory of Quantum Materials of Zhejiang Provinces, Westlake Institute for Advanced Study, Westlake University, Hangzhou, Zhejiang 310024, China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, Zhejiang 310024, China
| | - Shiqing Deng
- Beijing Advanced Innovation Center for Materials Genome Engineering, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Jun Chen
- Beijing Advanced Innovation Center for Materials Genome Engineering, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- Hainan University, Haikou, Hainan 570228, China
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Park DS, Pryds N. The fabrication of freestanding complex oxide membranes: Can we avoid using water? JOURNAL OF MATERIALS RESEARCH 2024; 39:2907-2917. [PMID: 39544439 PMCID: PMC11557645 DOI: 10.1557/s43578-024-01461-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/06/2024] [Accepted: 09/30/2024] [Indexed: 11/17/2024]
Abstract
Recent advances in fabricating scalable two-dimensional or freestanding functional materials have shown promise for their use in modern silicon-based electronics and future technologies. A growing interest is in creating freestanding complex oxide membranes using new methods like epitaxial lift-off and mechanical exfoliation to enhance their quality and integrity. Despite these advances, it remains challenging to consistently produce high-quality freestanding oxide membranes on a large scale for practical use. This perspective paper provides an overview of release-and-transfer techniques for fabricating freestanding single-crystalline complex oxide layers, which are initially grown epitaxially. Specifically, we systematically explore the advantages and disadvantages of water-assisted exfoliation of freestanding oxide layers, which have been widely adopted using a water-soluble sacrificial layer in recent years. Furthermore, we compare this approach with other methods to navigate future directions in oxide layer transfer technology, considering material selections, fabrication processes, and functionalization strategies. Graphical abstract Seeking a water-free epitaxial lift-off process: (1) Growth: An epitaxial film is grown on a sacrificial layer placed on a single-crystal substrate (top left). (2) Release: The film is released from the substrate without using a water-based sacrificial layer (top right). (3) Transfer: The film is transferred onto a new platform (bottom right). (4) Support Removal: A polymer support is removed from the film (bottom left).
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Affiliation(s)
- Dae-Sung Park
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Building 310, 2800 Kgs. Lyngby, Denmark
| | - Nini Pryds
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Building 310, 2800 Kgs. Lyngby, Denmark
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Li T, Deng S, Liu H, Chen J. Insights into Strain Engineering: From Ferroelectrics to Related Functional Materials and Beyond. Chem Rev 2024; 124:7045-7105. [PMID: 38754042 DOI: 10.1021/acs.chemrev.3c00767] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/18/2024]
Abstract
Ferroelectrics have become indispensable components in various application fields, including information processing, energy harvesting, and electromechanical conversion, owing to their unique ability to exhibit electrically or mechanically switchable polarization. The distinct polar noncentrosymmetric lattices of ferroelectrics make them highly responsive to specific crystal structures. Even slight changes in the lattice can alter the polarization configuration and response to external fields. In this regard, strain engineering has emerged as a prevalent regulation approach that not only offers a versatile platform for structural and performance optimization within ferroelectrics but also unlocks boundless potential in various functional materials. In this review, we systematically summarize the breakthroughs in ferroelectric-based functional materials achieved through strain engineering and progress in method development. We cover research activities ranging from fundamental attributes to wide-ranging applications and novel functionalities ranging from electromechanical transformation in sensors and actuators to tunable dielectric materials and information technologies, such as transistors and nonvolatile memories. Building upon these achievements, we also explore the endeavors to uncover the unprecedented properties through strain engineering in related chemical functionalities, such as ferromagnetism, multiferroicity, and photoelectricity. Finally, through discussions on the prospects and challenges associated with strain engineering in the materials, this review aims to stimulate the development of new methods for strain regulation and performance boosting in functional materials, transcending the boundaries of ferroelectrics.
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Affiliation(s)
- Tianyu Li
- Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Shiqing Deng
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Hui Liu
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Jun Chen
- Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
- Hainan University, Haikou 570228, China
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Song M, Zhang X, Wan S, Wang G, Liu J, Li W, Dong H, Lou C, Chen Z, Chen B, Zhang H. Electrical Conductivities and Conduction Mechanism of Lithium-Doped High-Entropy Oxides at Different Temperature and Pressure Conditions. JACS AU 2024; 4:592-606. [PMID: 38425908 PMCID: PMC10900490 DOI: 10.1021/jacsau.3c00693] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/08/2023] [Revised: 12/14/2023] [Accepted: 01/02/2024] [Indexed: 03/02/2024]
Abstract
Li-doped high-entropy oxides (Li-HEO) are promising electrode materials for Li-ion batteries. However, their electrical conduction in a wide range of temperatures and/or at high pressure is unknown, hindering their applications under extreme conditions. Especially, a clear understanding of the conduction mechanism is needed. In this work, we determined the carrier type of several Li-doped (MgCoNiCuZn)O semiconductor compounds and measured their electrical conduction at temperatures 79-773 K and/or at pressures up to 50 GPa. Three optical band gaps were uncovered from the UV-vis-NIR absorption measurements, unveiling the existence of defect energy levels near the valence band of p-type semiconductors. The Arrhenius-like plot of the electrical conductivity data revealed the electronic conduction in three temperature regions, i.e., the ionization region from 79 to 170 K, the extrinsic region from ∼170 to 300 K, and the intrinsic region at ≥300 K. The closeness of the determined electronic band gap and the second optical band gap suggests that the conduction electrons in the intrinsic region originate from a thermal excitation from the defect energy levels to the conduction band, which determines the electronic conductivity. It was also found that at or above room temperature, ionic conduction coexists with electronic conduction with a comparable magnitude at ambient pressure and that the intrinsic conduction mechanism also operates at high pressures. These findings provide us a fundamental understanding of the band structure and conduction mechanism of Li-HEO, which would be indispensable to their applications in new technical areas.
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Affiliation(s)
- Meng Song
- Center
for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Xiaoliang Zhang
- Center
for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Shun Wan
- Center
for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Gui Wang
- Center
for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Junxiu Liu
- Center
for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Weiwei Li
- Center
for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Hongliang Dong
- Center
for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Chenjie Lou
- Center
for High Pressure Science and Technology Advanced Research, Beijing 100193, China
| | - Zhiqiang Chen
- Center
for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Bin Chen
- Center
for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Hengzhong Zhang
- Center
for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
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Wang Z, Chen A, Tao K, Han Y, Li J. MatGPT: A Vane of Materials Informatics from Past, Present, to Future. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306733. [PMID: 37813548 DOI: 10.1002/adma.202306733] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2023] [Revised: 09/05/2023] [Indexed: 10/17/2023]
Abstract
Combining materials science, artificial intelligence (AI), physical chemistry, and other disciplines, materials informatics is continuously accelerating the vigorous development of new materials. The emergence of "GPT (Generative Pre-trained Transformer) AI" shows that the scientific research field has entered the era of intelligent civilization with "data" as the basic factor and "algorithm + computing power" as the core productivity. The continuous innovation of AI will impact the cognitive laws and scientific methods, and reconstruct the knowledge and wisdom system. This leads to think more about materials informatics. Here, a comprehensive discussion of AI models and materials infrastructures is provided, and the advances in the discovery and design of new materials are reviewed. With the rise of new research paradigms triggered by "AI for Science", the vane of materials informatics: "MatGPT", is proposed and the technical path planning from the aspects of data, descriptors, generative models, pretraining models, directed design models, collaborative training, experimental robots, as well as the efforts and preparations needed to develop a new generation of materials informatics, is carried out. Finally, the challenges and constraints faced by materials informatics are discussed, in order to achieve a more digital, intelligent, and automated construction of materials informatics with the joint efforts of more interdisciplinary scientists.
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Affiliation(s)
- Zhilong Wang
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai, 200240, China
- Key Laboratory of Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - An Chen
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai, 200240, China
- Key Laboratory of Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Kehao Tao
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai, 200240, China
- Key Laboratory of Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Yanqiang Han
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai, 200240, China
- Key Laboratory of Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Jinjin Li
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai, 200240, China
- Key Laboratory of Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, Shanghai Jiao Tong University, Shanghai, 200240, China
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